datasheet19294378.s21d-19.faiusrd.com/61/1/abuiaba9gaag1mxy6...mosfet. it functions to protect the...
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Product Battery Protect Solution IC
Product codeUP92A
( UP92A-00 )Production Form UTEP - 6L, BD3.4x2.53
Date of Registration May. 16. 2016
ITM Semiconductor Co., LTD82-7, Gwahaksaneop 1-ro, Oksan-myeon, Cheongwon-
gun, Chungcheongbuk-do, Korea 363-911TELFAX +82 - 43 - 270 - 4999
Battery Protect Solution IC
Document No. : IDP-UP92A-00-00
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Quality Management ITM Semiconductor
Rev. 00 [2016. 05. 16]
UP92A
Revision History (UP92A)
Battery Protect Solution IC
Rev. Date Contents Written
00 2016. 05. 16 # 신규 제정 Yi-sle Lee
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Quality Management ITM Semiconductor
Rev. 00 [2016. 05. 16]
UP92A
Contents
Battery Protect Solution IC
1. Features Page 1
2. Outline Page 2
3. Pin Assignment Page 3
4. Block Diagram Page 3
5. Absolute Maximum Rating Page 4
6. Electrical Characteristics Page 4
7. Measuring Circuit Page 7
8. Operation Page 8
1) Overcharge detector (VD1) Page 8
2) Overdischarge detector (VD2) Page 8
3) Discharge overcurrent detector, Short detector(VD3, Short Detector) Page 9
9. Application Circuit Page 10
10. Timing Chart Page 11
11. Package Description Page 13
12. Recommend Land Pattern Page 13
13. Marking Contents Page 14
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Quality Management ITM Semiconductor
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Features
1. The protection IC and The Dual-Nch MOSFET to use common Drain are integrated intoOne-packaging IC.
2. Reduced Pin-Count by fully connecting internally.3. Application Part1) Protection IC
① Uses high withstand voltage CMOS process.- The charger section can be connected up to absolute maximum rating 24V.
② Detection voltage precision- Overcharge detection voltage
±60㎷ (Ta=25℃), ±80㎷ (Ta=-30~70℃)- Overdischarge detection voltage
±110㎷ (Ta=25℃), ±130㎷ (Ta=-30~70℃)- Discharging overcurrent detection voltage
±35㎷ (Ta=25℃), ±55㎷ (Ta=-30~70℃)
③ Built-in detection delay times- Overcharge detection delay time
0.08[+0.12,-0.079]s (Ta=25℃), 0.08[+0.22,-0.079]s (Ta=-30~70℃)- Overdischarge detection delay time)
40.0[+60.0,-39.0]㎳ (Ta=25℃), 40.0[+90.0, -39.0]㎳ (Ta=-30~70℃)- Discharging overcurrent detection delay time)
10.0[+20.0,-9.0]㎳ (Ta=25℃), 10.0[+27.0, -9.0]㎳ (Ta=-30~70℃)- Short detection delay time)
300[+500.0]㎲ (Ta=25℃), 300[+950]㎲ (Ta=-30~70℃)④ 0V charge function is allowed⑤ Auto Wake-up function is not allowed
2) FET① Using advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltage as low as 2.5V while retaining a 8V VGS(MAX).② The protection for ESD③ Common drain configuration④ General characteristics
- VDS (V) = 24V- ID (A) = 6A- RSS(ON) < 40mΩ (VGS = 3.9V, ID = 1A)- ESD Rating : 2000V HBM
Battery Protect Solution IC
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Quality Management ITM Semiconductor
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Outline
This is a battery protect solution IC which is integrated with built-in the protection IC to usea lithium ion/lithium polymer secondary batteries developed for 1-cell series and Dual-NchMOSFET. It functions to protect the battery by detecting overcharge, overdischarge, dischargeovercurrent, and other abnormalities as turning off internal Nch MOSFET.The protection IC is composed of three voltage detectors, short detection circuit, referencevoltage sources, oscillator, counter circuit and logical circuits.
The COUT pin (charge FET control pin) and DOUT pin (discharge FET control pin) outputs areCMOS output, and can drive the internal Nch MOSFET directly. The COUT output becomes lowlevel after delay time fixed in the IC if overcharge is detected. The DOUT output becomes lowlevel after delay time fixed in the IC if overdischarge, discharge overcurrent or short is detected.
On overcharge state, if the VDD voltage is less than the overcharge release voltage, theCOUT output becomes high level after delay time fixed in the IC. On overdischarge state, if thevoltage of the battery rises more than the overdischarge detection voltage with connecting thecharger, the DOUT output becomes high level after delay time fixed in the IC. Charging currentcan be supplied to the battery discharged up to 0V.
Once discharge overcurrent or short have been detected, if the state of discharge overcurrentor short is released by opening the loads, the DOUT output becomes high level after delay timefixed in the IC. On overdischarge state, the supply current is reduced as less as possible.
Battery Protect Solution IC
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Pin Assignment
Block Diagram
Battery Protect Solution IC
[ Package : UTEP-6L ]
1 V―2 N.C (No Connect )
3 Source 2
4 Source 1(same as VSS)
5 N.C (No Connect )
6 VDD7 Drain
8 N.C (No Connect )
12
3
6
5
4
7
8
4
5
6
32
1
VD1
VD2
VD3
Oscillator Counter
LogicCircuit Level Shift
Delay
LogicCircuit
Short
VSS DOUT COUT
Gate1 Gate2
VDD
Source1 Source2
V-
Overcharge
Overdischarge
DischargeOvercurrent
Protection IC
Common DrainDual-Nch MOSFET
Charger
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Absolute Maximum Rating
※ TOPR=25℃, VSS=0V
Electrical Characteristics
Battery Protect Solution IC
Item Symbol Measure Condition Min. Typ. Max. Unit *1Input Voltage
Operating Input Voltage VDD1 VDD - VSS 1.5 - 8.0 V AMinimum Operating
Voltage for 0V Charging VST VDD-V-, VDD-VSS=0V - - 1.2 V A
Channel ON VoltageCOUT Pin Nch ON Voltage VOL1 - - 0.1 0.5 V -
COUT Pin Pch ON Voltage VOH1 - VDD-0.1 VDD-0.02 - V -
DOUT Pin Nch ON Voltage VOL2 - - 0.1 0.5 V -
DOUT Pin Pch ON Voltage VOH2 - VDD-0.1 VDD-0.02 - V -
Current Consumption
Current Consumption IDDVDD=3.9V
V-=0V TOPR= 25℃ - 3.0 6.0 ㎂ L
Current Consumption atStand-By IS VDD=2.0V TOPR= 25℃ - - 0.1 ㎂ L
Over Charge Voltage Protection
Overcharge DetectionVoltage VDET1 R1=1.0KΩ
TOPR= 25℃ 4.240 4.300 4.360V B
TOPR= -30~70℃ 4.220 4.300 4.380
Overcharge DetectionDelay Time tVDET1 VDD=3.6V→4.5V
TOPR= 25℃ 0.001 0.080 0.200s B
TOPR= -30~70℃ 0.001 0.080 0.300
Overcharge ReleaseVoltage VREL1 R1=1.0KΩ
TOPR= 25℃ 4.040 4.100 4.160V B
TOPR= -30~70℃ 4.020 4.100 4.180
Item Symbol Rating UnitSupply Voltage VDD -0.3 ~ 10 V
V- Terminal Input Voltage V- VDD-28 ~ VDD+0.3 V
COUT Terminal Output Voltage VCOUT VDD-28 ~ VDD+0.3 V
DOUT Terminal Output Voltage VDOUT VSS-0.3 ~ VDD+0.3 V
Operation Temperature TOPR -40 ~ +85 ℃
Storage Temperature TSTG -55 ~ +125 ℃
Drain-Source Voltage VDS 24 V
Gate-Source Voltage VGS ±12 V
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Note : *1 The test circuit symbols.*2 The parameter is guaranteed by design.
Battery Protect Solution IC
Item Symbol Measure Condition Min. Typ. Max. Unit *1Over Discharge Voltage Protection
Overdischarge DetectionVoltage VDET2
R1=1KΩV-=0V
TOPR= 25℃ 2.290 2.400 2.510V D
TOPR= -30~70℃ 2.270 2.400 2.530
Overdischarge DetectionDelay Time tVDET2 VDD=3.6V→2.0V
TOPR= 25℃ 1.0 40.0 100.0㎳ D
TOPR= -30~70℃ 1.0 40.0 130.0
Overdischarge ReleaseVoltage 1 VREL2'
V-≥VCHA,R1=1.0KΩ
TOPR= 25℃ 2.290 2.400 2.510V D
TOPR= -30~70℃ 2.270 2.400 2.530
Overdischarge ReleaseVoltage 2 VREL2'
V-≤VCHA,R1=1.0KΩ
TOPR= 25℃ 2.890 3.000 3.110V D
TOPR= -30~70℃ 2.870 3.000 3.130
Discharge Overcurrent Protection
Discharging OvercurrentDetection Voltage VDET3
VDD=3.6VR2=1.0㏀
TOPR= 25℃ 0.115 0.150 0.185V F
TOPR= -30~70℃ 0.095 0.150 0.205
Discharging OvercurrentDetection Delay Time tVDET3
VDD=3.6VV-=0V→1V
TOPR= 25℃ 1.0 10.0 30.0㎳ F
TOPR= -30~70℃ 1.0 10.0 37.0
Short Protection
Short Detection Voltage VSHORT VDD=3.6VTOPR= 25℃ 0.55 1.15 1.70
V FTOPR= -30~70℃ 0.50 1.15 1.80
Short DetectionDelay Time tSHORT
VDD=3.6VV-=0V→3V
TOPR= 25℃ - 300 800㎲ F
TOPR= -30~70℃ - 300 1250
Charger Protection
Charger DetectionTheshold Voltage VCHA VDD=3.6V TOPR= 25℃ - 0.3 - V F
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Note : *1 The test circuit symbols.*2 The parameter is guaranteed by design.
Battery Protect Solution IC
Item Symbol Measure Condition Min. Typ. Max. Unit *1
Integrated MOSFET
Drain-SourceBreakdown Voltage BVDSS ID=250㎂, VGS=0V 24 - - V
Zero Gate VoltageDrain Current IDSS VDS=20V, VGS=0V - - 1 ㎂
Gate-BodyLeakage Current IGSS VDS=0V, VGS=±10V - - ±10 ㎂
Gate-SourceBreakdown Voltage BVGSO VDS=0V, IG=±250㎂ ±12 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250㎂ 0.6 1.0 1.5 V
Static Source-SourceON-Resistance RSS(ON)
VGS=4.2V, ID=1A 25.0 32.0 39.0 mΩ
VGS=3.9V, ID=1A 26.0 33.0 40.0 mΩ
VGS=3.7V, ID=1A 27.0 34.0 41.0 mΩ
VGS=3.5V, ID=1A 29.0 36.0 43.0 mΩ
VGS=3.3V, ID=1A 31.0 38.0 45.0 mΩ
VGS=3.0V, ID=1A 33.0 40.0 47.0 mΩ
Diode Forward Voltage VSD IS=1.7A, VGS=0V 0.50 0.69 0.90 V
Maximum Body-DiodeContinuous Current IS - - 4.5 A
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Measuring Circuit
Battery Protect Solution IC
Nc Nc
Nc Nc
Nc Nc
Nc Nc
TP or Nc
TP or NcTP or Nc
TP or Nc TP or Nc
TP or NcTP or Nc
VDDV-
Source1 (VSS) Source2
VV
VA
V
A
V
VDDV-
Source1 (VSS) Source2
V
VDDV-
Source1 (VSS) Source2
V
VDDV-
Source1 (VSS) Source2
V
VDDV-
Source1 (VSS) Source2
V
VDDV-
Source1 (VSS) Source2
V
VDDV-
Source1 (VSS) Source2
V
VDDV-
Source1 (VSS) Source2
A. E.
B.
C.
D.
F.
G.
H.
V
V
TP or Nc
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Operation
1. Overcharge detector (VD1)The VD1 monitors VDD pin voltage during charge. In the state of charging the battery, it
will detect the overcharge state of the battery if the VDD terminal voltage becomes higherthan the overcharge detection voltage(Typ. 4.300V). And then the COUT terminal turns to lowlevel, so the internal charging control Nch MOSFET turns OFF and it forbids to charge thebattery.
After detecting overcharge, it will release the overcharge state if the VDD terminal voltagebecomes lower than the overcharge release voltage(Typ. 4.100V). And then the COUT terminalturns to high level, so the internal charging control Nch MOSFET turns ON, and it accepts 새charge the battery.
When the VDD terminal voltage is higher than the overcharge detection voltage, to disconnectthe charger and connect the load, leave the COUT terminal low level, but it accepts to conductload current via the parasitical body diode of the internal Nch MOSFET. And then if theVDD terminal voltage becomes lower than the overcharge detection voltage, the COUT terminalturns to high level, so the internal Nch MOSFET turn ON, and it accepts to charge the battery.
The overcharge detection and release have delay time decided internally. When the VDDterminal voltage becomes higher than the overcharge detection voltage, if the VDD terminalvoltage becomes lower than the overcharge detection voltage again within the overchargedetection delay time(Typ. 0.08s), it will not detect overcharge. And in the state of overcharge,when the VDD terminal voltage becomes lower than the overcharge release voltage, if theVDD terminal voltage backs higher than the overcharge release voltage again within theovercharge release delay time, it will not release overcharge.
The output driver stage of the COUT terminal includes a level shifter, so it will output theV- terminal voltage as low level. The output type of the COUT terminal is CMOS outputbetween VDD and V- terminal voltage.
2. Overdischarge detector (VD2)The VD2 monitors VDD pin voltage during discharge. In the state of discharging the battery,
it will detect the overdischarge state of the battery if the VDD terminal becomes lower thanthe overdischarge detection voltage (Typ. 2.400V). And then the DOUT terminal turns to lowlevel, so the internal discharging control Nch MOSFET turn OFF and it forbids to dischargethe battery.
The overdischarge status will be released by two cases:(1) When V- pin voltage is equal to or higher than the charger detection voltage (VCHA)
by charging and the VDD pin voltage is higher than overdischarge detection voltage(Typ. 2.400V).
(2) When V- pin voltage is equal to or lower than the charger detection voltage (VCHA)by charging and the VDD pin voltage is higher than overdischarge release voltage(Typ. 3.000V).
Battery Protect Solution IC
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Quality Management ITM Semiconductor
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When the battery voltage is about 0V, if the charger voltage is higher than the minimumoperating voltage for 0V charging (Max. 1.2V), the COUT terminal outputs high level and itaccepts to conduct charging current.
The overdischarge detection have delay time decided internally. When the VDD terminalvoltage becomes lower than the overdischarge detection voltage, if the VDD terminal voltagebecomes higher than the overdischarge detection voltage again within the overdischargedetection delay time (Typ. 40.0ms), it will not detect overdischarge. Moreover, the overdischargerelease delay time exists, too.
All the circuits are stopped, and after the overdischarge is detected, it is assumed thestate of the standby, and decreases the current (standby current) which IC consumes asmuch as possible. (When VDD=2V, Max. 0.1uA).
The output type of the DOUT terminal is CMOS output between VDD and VSS terminal voltage.
3. Discharge overcurrent detector, Short detector (VD3, Short Detector)In the state of chargable and dischargabe, VD3 monitors the voltage level of V- pin. If
the V- terminal voltage becomes higher than the discharging overcurrent detection voltage(Typ. 0.150V) by short of loads, etc., it will detect discharging overcurrent state. If the V-terminal voltage becomes higher then short detection voltage (Typ. 1.15V), it will detectdischarging overcurrent state, too. And then the DOUT terminal outputs low level, so the internaldischarging control Nch MOSFET turns OFF, and it protects from large current discharging.
The discharging overcurrent detection has delay time decided internally. When the V- terminalvoltage becomes higher than the discharging overcurrent detection voltage, if the V- terminalvoltage becomes lower than the discharging overcurrent detection voltage within the dischargingovercurrent detection delay time (Typ. 10.0ms), it will not detect discharging overcurrent.Morever, the discharging overcurrent release delay time exists, too.
The short detection delay time (Typ. 300.0us) decided internally exists, too.
Battery Protect Solution IC
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Quality Management ITM Semiconductor
Rev. 00 [2016. 05. 16]
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Application Circuit (Example)
※ Application Hint
R1 and C1 stabilize a supply voltage ripple. However, the detection voltage rises by thecurrent of penetration in IC of the voltage detection when R1 is enlarged, so the value ofR1 is adjusted to 1kohm or less. Moreover, adjust the value of C1 to 0.01uF or more todo the stability operation, please.R1 and R2 resistors are current limit resistance if a charger is connected reversibly or a
high voltage charger that exceeds the absolute maximum rating is connected. R1 and R2may cause a power consumption will be over rating of power dissipation, therefore the`R1+R2` should be more than 1kohm. Moreover, if R2 is too enlarged, the chargerconnection release cannot be occasionally done after the overdischarge is detected, soadjust the value of R2 to 10kohm or less, please.C2 and C3 capacitors have effect that the system stability about voltage ripple or
imported noise. After check characteristics, decide that these capacitors should be insertedor not, where should be inserted, and capacitance value, please.
Battery Protect Solution IC
VD1
VD2
VD3
Oscillator Counter
LogicCircuit Level Shift
Delay
LogicCircuit
Short
VSS DOUT COUT
Gate1 Gate2
VDD
Source1
Drain
Source2
V-
Overcharge
Overdischarge
DischargeOvercurrent
Protection IC
Common DrainDual-Nch MOSFET
Charger
C10.1㎌
R2 2.2㏀
C20.1㎌
C30.1㎌
+
-
R1 1.0㏀
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Timing Chart
1. Overcharge, Charging overcurrent operations
VDD
V-
COUT
ICHARGE
IDISCHARGE
t
t
t
t
Connect Charger Connect ChargerConnect Load
Connect Load
VDET1
VDD
VDET3VSS
VDD
0
tVDET1 tVDET1
tVREL1tVREL1
V-
VCH
VREL1
Battery Protect Solution IC
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2. Overdischarge, Discharging Overcurrent and Short operations
VDD
V-
DOUT
ICHARGE
IDISCHARGE
t
t
t
t
Connect Load ConnectCharger
VDET2
VDD
VDET3VSS
VDD
0
tVDET2 tVDET2 tVDET3
tVREL2 tVREL2 tVREL3
VSHORT
Connect Load ConnectCharger
Open Short Open
Overcurrent
tVREL3
tSHORT
V-
VREL2
Battery Protect Solution IC
VSS
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Package Description
Recommend Land Pattern
Battery Protect Solution IC
[mm]
NOTE
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Quality Management ITM Semiconductor
Rev. 00 [2016. 05. 16]
UP92A
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Marking Contents
Battery Protect Solution IC
Indicate 1'st Pin
Model No.
ABCDEFUP92A
Lot Code.Manufacturing weekManufacturing yearAssembly Location