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ITM Semiconductor Co., LTD. DATA SHEET Product Battery Protect Solution IC Product code UP92A ( UP92A-00 ) Production Form UTEP - 6L, BD3.4x2.53 Date of Registration May. 16. 2016 ITM Semiconductor Co., LTD 82-7, Gwahaksaneop 1-ro, Oksan-myeon, Cheongwon- gun, Chungcheongbuk-do, Korea 363-911 TEL FAX +82 - 43 - 270 - 4999 Battery Protect Solution IC Document No. : IDP-UP92A-00-00

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  • IITTMM SSeemmiiccoonndduuccttoorr CCoo..,, LLTTDD..

    DDDDDAAAAATTTTTAAAAA SSSSSHHHHHEEEEEEEEEETTTTT

    Product Battery Protect Solution IC

    Product codeUP92A

    ( UP92A-00 )Production Form UTEP - 6L, BD3.4x2.53

    Date of Registration May. 16. 2016

    ITM Semiconductor Co., LTD82-7, Gwahaksaneop 1-ro, Oksan-myeon, Cheongwon-

    gun, Chungcheongbuk-do, Korea 363-911TELFAX +82 - 43 - 270 - 4999

    Battery Protect Solution IC

    Document No. : IDP-UP92A-00-00

  • Quality Management ITM Semiconductor

    Rev. 00 [2016. 05. 16]

    UP92A

    Revision History (UP92A)

    Battery Protect Solution IC

    Rev. Date Contents Written

    00 2016. 05. 16 # 신규 제정 Yi-sle Lee

  • Quality Management ITM Semiconductor

    Rev. 00 [2016. 05. 16]

    UP92A

    Contents

    Battery Protect Solution IC

    1. Features Page 1

    2. Outline Page 2

    3. Pin Assignment Page 3

    4. Block Diagram Page 3

    5. Absolute Maximum Rating Page 4

    6. Electrical Characteristics Page 4

    7. Measuring Circuit Page 7

    8. Operation Page 8

    1) Overcharge detector (VD1) Page 8

    2) Overdischarge detector (VD2) Page 8

    3) Discharge overcurrent detector, Short detector(VD3, Short Detector) Page 9

    9. Application Circuit Page 10

    10. Timing Chart Page 11

    11. Package Description Page 13

    12. Recommend Land Pattern Page 13

    13. Marking Contents Page 14

  • Quality Management ITM Semiconductor

    Rev. 00 [2016. 05. 16]

    UP92A

    - 1 -

    Features

    1. The protection IC and The Dual-Nch MOSFET to use common Drain are integrated intoOne-packaging IC.

    2. Reduced Pin-Count by fully connecting internally.3. Application Part1) Protection IC

    ① Uses high withstand voltage CMOS process.- The charger section can be connected up to absolute maximum rating 24V.

    ② Detection voltage precision- Overcharge detection voltage

    ±60㎷ (Ta=25℃), ±80㎷ (Ta=-30~70℃)- Overdischarge detection voltage

    ±110㎷ (Ta=25℃), ±130㎷ (Ta=-30~70℃)- Discharging overcurrent detection voltage

    ±35㎷ (Ta=25℃), ±55㎷ (Ta=-30~70℃)

    ③ Built-in detection delay times- Overcharge detection delay time

    0.08[+0.12,-0.079]s (Ta=25℃), 0.08[+0.22,-0.079]s (Ta=-30~70℃)- Overdischarge detection delay time)

    40.0[+60.0,-39.0]㎳ (Ta=25℃), 40.0[+90.0, -39.0]㎳ (Ta=-30~70℃)- Discharging overcurrent detection delay time)

    10.0[+20.0,-9.0]㎳ (Ta=25℃), 10.0[+27.0, -9.0]㎳ (Ta=-30~70℃)- Short detection delay time)

    300[+500.0]㎲ (Ta=25℃), 300[+950]㎲ (Ta=-30~70℃)④ 0V charge function is allowed⑤ Auto Wake-up function is not allowed

    2) FET① Using advanced trench technology to provide excellent RDS(ON), low gate charge and

    operation with gate voltage as low as 2.5V while retaining a 8V VGS(MAX).② The protection for ESD③ Common drain configuration④ General characteristics

    - VDS (V) = 24V- ID (A) = 6A- RSS(ON) < 40mΩ (VGS = 3.9V, ID = 1A)- ESD Rating : 2000V HBM

    Battery Protect Solution IC

  • Quality Management ITM Semiconductor

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    Outline

    This is a battery protect solution IC which is integrated with built-in the protection IC to usea lithium ion/lithium polymer secondary batteries developed for 1-cell series and Dual-NchMOSFET. It functions to protect the battery by detecting overcharge, overdischarge, dischargeovercurrent, and other abnormalities as turning off internal Nch MOSFET.The protection IC is composed of three voltage detectors, short detection circuit, referencevoltage sources, oscillator, counter circuit and logical circuits.

    The COUT pin (charge FET control pin) and DOUT pin (discharge FET control pin) outputs areCMOS output, and can drive the internal Nch MOSFET directly. The COUT output becomes lowlevel after delay time fixed in the IC if overcharge is detected. The DOUT output becomes lowlevel after delay time fixed in the IC if overdischarge, discharge overcurrent or short is detected.

    On overcharge state, if the VDD voltage is less than the overcharge release voltage, theCOUT output becomes high level after delay time fixed in the IC. On overdischarge state, if thevoltage of the battery rises more than the overdischarge detection voltage with connecting thecharger, the DOUT output becomes high level after delay time fixed in the IC. Charging currentcan be supplied to the battery discharged up to 0V.

    Once discharge overcurrent or short have been detected, if the state of discharge overcurrentor short is released by opening the loads, the DOUT output becomes high level after delay timefixed in the IC. On overdischarge state, the supply current is reduced as less as possible.

    Battery Protect Solution IC

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    Pin Assignment

    Block Diagram

    Battery Protect Solution IC

    [ Package : UTEP-6L ]

    1 V―2 N.C (No Connect )

    3 Source 2

    4 Source 1(same as VSS)

    5 N.C (No Connect )

    6 VDD7 Drain

    8 N.C (No Connect )

    12

    3

    6

    5

    4

    7

    8

    4

    5

    6

    32

    1

    VD1

    VD2

    VD3

    Oscillator Counter

    LogicCircuit Level Shift

    Delay

    LogicCircuit

    Short

    VSS DOUT COUT

    Gate1 Gate2

    VDD

    Source1 Source2

    V-

    Overcharge

    Overdischarge

    DischargeOvercurrent

    Protection IC

    Common DrainDual-Nch MOSFET

    Charger

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    Absolute Maximum Rating

    ※ TOPR=25℃, VSS=0V

    Electrical Characteristics

    Battery Protect Solution IC

    Item Symbol Measure Condition Min. Typ. Max. Unit *1Input Voltage

    Operating Input Voltage VDD1 VDD - VSS 1.5 - 8.0 V AMinimum Operating

    Voltage for 0V Charging VST VDD-V-, VDD-VSS=0V - - 1.2 V A

    Channel ON VoltageCOUT Pin Nch ON Voltage VOL1 - - 0.1 0.5 V -

    COUT Pin Pch ON Voltage VOH1 - VDD-0.1 VDD-0.02 - V -

    DOUT Pin Nch ON Voltage VOL2 - - 0.1 0.5 V -

    DOUT Pin Pch ON Voltage VOH2 - VDD-0.1 VDD-0.02 - V -

    Current Consumption

    Current Consumption IDDVDD=3.9V

    V-=0V TOPR= 25℃ - 3.0 6.0 ㎂ L

    Current Consumption atStand-By IS VDD=2.0V TOPR= 25℃ - - 0.1 ㎂ L

    Over Charge Voltage Protection

    Overcharge DetectionVoltage VDET1 R1=1.0KΩ

    TOPR= 25℃ 4.240 4.300 4.360V B

    TOPR= -30~70℃ 4.220 4.300 4.380

    Overcharge DetectionDelay Time tVDET1 VDD=3.6V→4.5V

    TOPR= 25℃ 0.001 0.080 0.200s B

    TOPR= -30~70℃ 0.001 0.080 0.300

    Overcharge ReleaseVoltage VREL1 R1=1.0KΩ

    TOPR= 25℃ 4.040 4.100 4.160V B

    TOPR= -30~70℃ 4.020 4.100 4.180

    Item Symbol Rating UnitSupply Voltage VDD -0.3 ~ 10 V

    V- Terminal Input Voltage V- VDD-28 ~ VDD+0.3 V

    COUT Terminal Output Voltage VCOUT VDD-28 ~ VDD+0.3 V

    DOUT Terminal Output Voltage VDOUT VSS-0.3 ~ VDD+0.3 V

    Operation Temperature TOPR -40 ~ +85 ℃

    Storage Temperature TSTG -55 ~ +125 ℃

    Drain-Source Voltage VDS 24 V

    Gate-Source Voltage VGS ±12 V

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    Note : *1 The test circuit symbols.*2 The parameter is guaranteed by design.

    Battery Protect Solution IC

    Item Symbol Measure Condition Min. Typ. Max. Unit *1Over Discharge Voltage Protection

    Overdischarge DetectionVoltage VDET2

    R1=1KΩV-=0V

    TOPR= 25℃ 2.290 2.400 2.510V D

    TOPR= -30~70℃ 2.270 2.400 2.530

    Overdischarge DetectionDelay Time tVDET2 VDD=3.6V→2.0V

    TOPR= 25℃ 1.0 40.0 100.0㎳ D

    TOPR= -30~70℃ 1.0 40.0 130.0

    Overdischarge ReleaseVoltage 1 VREL2'

    V-≥VCHA,R1=1.0KΩ

    TOPR= 25℃ 2.290 2.400 2.510V D

    TOPR= -30~70℃ 2.270 2.400 2.530

    Overdischarge ReleaseVoltage 2 VREL2'

    V-≤VCHA,R1=1.0KΩ

    TOPR= 25℃ 2.890 3.000 3.110V D

    TOPR= -30~70℃ 2.870 3.000 3.130

    Discharge Overcurrent Protection

    Discharging OvercurrentDetection Voltage VDET3

    VDD=3.6VR2=1.0㏀

    TOPR= 25℃ 0.115 0.150 0.185V F

    TOPR= -30~70℃ 0.095 0.150 0.205

    Discharging OvercurrentDetection Delay Time tVDET3

    VDD=3.6VV-=0V→1V

    TOPR= 25℃ 1.0 10.0 30.0㎳ F

    TOPR= -30~70℃ 1.0 10.0 37.0

    Short Protection

    Short Detection Voltage VSHORT VDD=3.6VTOPR= 25℃ 0.55 1.15 1.70

    V FTOPR= -30~70℃ 0.50 1.15 1.80

    Short DetectionDelay Time tSHORT

    VDD=3.6VV-=0V→3V

    TOPR= 25℃ - 300 800㎲ F

    TOPR= -30~70℃ - 300 1250

    Charger Protection

    Charger DetectionTheshold Voltage VCHA VDD=3.6V TOPR= 25℃ - 0.3 - V F

  • Quality Management ITM Semiconductor

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    Note : *1 The test circuit symbols.*2 The parameter is guaranteed by design.

    Battery Protect Solution IC

    Item Symbol Measure Condition Min. Typ. Max. Unit *1

    Integrated MOSFET

    Drain-SourceBreakdown Voltage BVDSS ID=250㎂, VGS=0V 24 - - V

    Zero Gate VoltageDrain Current IDSS VDS=20V, VGS=0V - - 1 ㎂

    Gate-BodyLeakage Current IGSS VDS=0V, VGS=±10V - - ±10 ㎂

    Gate-SourceBreakdown Voltage BVGSO VDS=0V, IG=±250㎂ ±12 - - V

    Gate Threshold Voltage VGS(th) VDS=VGS, ID=250㎂ 0.6 1.0 1.5 V

    Static Source-SourceON-Resistance RSS(ON)

    VGS=4.2V, ID=1A 25.0 32.0 39.0 mΩ

    VGS=3.9V, ID=1A 26.0 33.0 40.0 mΩ

    VGS=3.7V, ID=1A 27.0 34.0 41.0 mΩ

    VGS=3.5V, ID=1A 29.0 36.0 43.0 mΩ

    VGS=3.3V, ID=1A 31.0 38.0 45.0 mΩ

    VGS=3.0V, ID=1A 33.0 40.0 47.0 mΩ

    Diode Forward Voltage VSD IS=1.7A, VGS=0V 0.50 0.69 0.90 V

    Maximum Body-DiodeContinuous Current IS - - 4.5 A

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    Measuring Circuit

    Battery Protect Solution IC

    Nc Nc

    Nc Nc

    Nc Nc

    Nc Nc

    TP or Nc

    TP or NcTP or Nc

    TP or Nc TP or Nc

    TP or NcTP or Nc

    VDDV-

    Source1 (VSS) Source2

    VV

    VA

    V

    A

    V

    VDDV-

    Source1 (VSS) Source2

    V

    VDDV-

    Source1 (VSS) Source2

    V

    VDDV-

    Source1 (VSS) Source2

    V

    VDDV-

    Source1 (VSS) Source2

    V

    VDDV-

    Source1 (VSS) Source2

    V

    VDDV-

    Source1 (VSS) Source2

    V

    VDDV-

    Source1 (VSS) Source2

    A. E.

    B.

    C.

    D.

    F.

    G.

    H.

    V

    V

    TP or Nc

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    Operation

    1. Overcharge detector (VD1)The VD1 monitors VDD pin voltage during charge. In the state of charging the battery, it

    will detect the overcharge state of the battery if the VDD terminal voltage becomes higherthan the overcharge detection voltage(Typ. 4.300V). And then the COUT terminal turns to lowlevel, so the internal charging control Nch MOSFET turns OFF and it forbids to charge thebattery.

    After detecting overcharge, it will release the overcharge state if the VDD terminal voltagebecomes lower than the overcharge release voltage(Typ. 4.100V). And then the COUT terminalturns to high level, so the internal charging control Nch MOSFET turns ON, and it accepts 새charge the battery.

    When the VDD terminal voltage is higher than the overcharge detection voltage, to disconnectthe charger and connect the load, leave the COUT terminal low level, but it accepts to conductload current via the parasitical body diode of the internal Nch MOSFET. And then if theVDD terminal voltage becomes lower than the overcharge detection voltage, the COUT terminalturns to high level, so the internal Nch MOSFET turn ON, and it accepts to charge the battery.

    The overcharge detection and release have delay time decided internally. When the VDDterminal voltage becomes higher than the overcharge detection voltage, if the VDD terminalvoltage becomes lower than the overcharge detection voltage again within the overchargedetection delay time(Typ. 0.08s), it will not detect overcharge. And in the state of overcharge,when the VDD terminal voltage becomes lower than the overcharge release voltage, if theVDD terminal voltage backs higher than the overcharge release voltage again within theovercharge release delay time, it will not release overcharge.

    The output driver stage of the COUT terminal includes a level shifter, so it will output theV- terminal voltage as low level. The output type of the COUT terminal is CMOS outputbetween VDD and V- terminal voltage.

    2. Overdischarge detector (VD2)The VD2 monitors VDD pin voltage during discharge. In the state of discharging the battery,

    it will detect the overdischarge state of the battery if the VDD terminal becomes lower thanthe overdischarge detection voltage (Typ. 2.400V). And then the DOUT terminal turns to lowlevel, so the internal discharging control Nch MOSFET turn OFF and it forbids to dischargethe battery.

    The overdischarge status will be released by two cases:(1) When V- pin voltage is equal to or higher than the charger detection voltage (VCHA)

    by charging and the VDD pin voltage is higher than overdischarge detection voltage(Typ. 2.400V).

    (2) When V- pin voltage is equal to or lower than the charger detection voltage (VCHA)by charging and the VDD pin voltage is higher than overdischarge release voltage(Typ. 3.000V).

    Battery Protect Solution IC

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    When the battery voltage is about 0V, if the charger voltage is higher than the minimumoperating voltage for 0V charging (Max. 1.2V), the COUT terminal outputs high level and itaccepts to conduct charging current.

    The overdischarge detection have delay time decided internally. When the VDD terminalvoltage becomes lower than the overdischarge detection voltage, if the VDD terminal voltagebecomes higher than the overdischarge detection voltage again within the overdischargedetection delay time (Typ. 40.0ms), it will not detect overdischarge. Moreover, the overdischargerelease delay time exists, too.

    All the circuits are stopped, and after the overdischarge is detected, it is assumed thestate of the standby, and decreases the current (standby current) which IC consumes asmuch as possible. (When VDD=2V, Max. 0.1uA).

    The output type of the DOUT terminal is CMOS output between VDD and VSS terminal voltage.

    3. Discharge overcurrent detector, Short detector (VD3, Short Detector)In the state of chargable and dischargabe, VD3 monitors the voltage level of V- pin. If

    the V- terminal voltage becomes higher than the discharging overcurrent detection voltage(Typ. 0.150V) by short of loads, etc., it will detect discharging overcurrent state. If the V-terminal voltage becomes higher then short detection voltage (Typ. 1.15V), it will detectdischarging overcurrent state, too. And then the DOUT terminal outputs low level, so the internaldischarging control Nch MOSFET turns OFF, and it protects from large current discharging.

    The discharging overcurrent detection has delay time decided internally. When the V- terminalvoltage becomes higher than the discharging overcurrent detection voltage, if the V- terminalvoltage becomes lower than the discharging overcurrent detection voltage within the dischargingovercurrent detection delay time (Typ. 10.0ms), it will not detect discharging overcurrent.Morever, the discharging overcurrent release delay time exists, too.

    The short detection delay time (Typ. 300.0us) decided internally exists, too.

    Battery Protect Solution IC

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    Application Circuit (Example)

    ※ Application Hint

    R1 and C1 stabilize a supply voltage ripple. However, the detection voltage rises by thecurrent of penetration in IC of the voltage detection when R1 is enlarged, so the value ofR1 is adjusted to 1kohm or less. Moreover, adjust the value of C1 to 0.01uF or more todo the stability operation, please.R1 and R2 resistors are current limit resistance if a charger is connected reversibly or a

    high voltage charger that exceeds the absolute maximum rating is connected. R1 and R2may cause a power consumption will be over rating of power dissipation, therefore the`R1+R2` should be more than 1kohm. Moreover, if R2 is too enlarged, the chargerconnection release cannot be occasionally done after the overdischarge is detected, soadjust the value of R2 to 10kohm or less, please.C2 and C3 capacitors have effect that the system stability about voltage ripple or

    imported noise. After check characteristics, decide that these capacitors should be insertedor not, where should be inserted, and capacitance value, please.

    Battery Protect Solution IC

    VD1

    VD2

    VD3

    Oscillator Counter

    LogicCircuit Level Shift

    Delay

    LogicCircuit

    Short

    VSS DOUT COUT

    Gate1 Gate2

    VDD

    Source1

    Drain

    Source2

    V-

    Overcharge

    Overdischarge

    DischargeOvercurrent

    Protection IC

    Common DrainDual-Nch MOSFET

    Charger

    C10.1㎌

    R2 2.2㏀

    C20.1㎌

    C30.1㎌

    R1 1.0㏀

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    Timing Chart

    1. Overcharge, Charging overcurrent operations

    VDD

    V-

    COUT

    ICHARGE

    IDISCHARGE

    t

    t

    t

    t

    Connect Charger Connect ChargerConnect Load

    Connect Load

    VDET1

    VDD

    VDET3VSS

    VDD

    0

    tVDET1 tVDET1

    tVREL1tVREL1

    V-

    VCH

    VREL1

    Battery Protect Solution IC

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    2. Overdischarge, Discharging Overcurrent and Short operations

    VDD

    V-

    DOUT

    ICHARGE

    IDISCHARGE

    t

    t

    t

    t

    Connect Load ConnectCharger

    VDET2

    VDD

    VDET3VSS

    VDD

    0

    tVDET2 tVDET2 tVDET3

    tVREL2 tVREL2 tVREL3

    VSHORT

    Connect Load ConnectCharger

    Open Short Open

    Overcurrent

    tVREL3

    tSHORT

    V-

    VREL2

    Battery Protect Solution IC

    VSS

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    Package Description

    Recommend Land Pattern

    Battery Protect Solution IC

    [mm]

    NOTE

  • Quality Management ITM Semiconductor

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    - 14 -

    Marking Contents

    Battery Protect Solution IC

    Indicate 1'st Pin

    Model No.

    ABCDEFUP92A

    Lot Code.Manufacturing weekManufacturing yearAssembly Location