cosma software with: edit menu for process recipe edition, adjust menu for process optimizing, ...
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COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,
Adjust menu for process optimizing,Adjust menu for process optimizing,
Maintenance menus for complete equipment Maintenance menus for complete equipment
control and service via internet with VPN (Virtual control and service via internet with VPN (Virtual
Private Network).Private Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data
comparison).comparison).
Equipment Control & SoftwareEquipment Control & Software
A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels
ActionActionss
ConstructorConstructor
LotsLotsActionsActions
ProcessProcess
Closed-loopClosed-loop
Server for Server for GUIGUI
COSMA COSMA SupervisorSupervisor
Embedded Embedded control PUcontrol PU
Embedded Embedded control control functionfunction
COSMA COSMA ControllerController
Process Process ControllerController
Device Device ControllersControllers
Physical Physical devicesdevices
OperatorOperator
Remote GUIRemote GUI
PC UserPC User
MonitorinMonitoringg
MonitorinMonitoringg
MonitorinMonitoringg
Diagram ModesDiagram Modes
Stand-byStand-byModeMode
Step by stepStep by step
ModeMode
ProductionProductionModeMode
OptimizationOptimizationModeMode
ConstructorConstructorModeMode
Shut downShut downModeMode
NormalNormal
ErrorsErrors
OperatorOperator
ProductionProduction
MaintenanceMaintenance
ConstructorConstructor
A Communicant ToolA Communicant Tool
COSMA COSMA SupervisorSupervisor
COSMACOSMAGUIGUI
Customer Customer Ethernet NetworkEthernet Network
Process Process Control Unit Control Unit
(1)(1)
Process Process Control Unit Control Unit
(2)(2)
Device Device Control (1)Control (1)
EthernetEthernet
Device Device Control (2)Control (2)
EthernetEthernet
WANWAN
VPNVPNADSLADSLFix IPFix IP
FirewalFirewalll
DedicatedDedicatedEthernet Ethernet networknetwork
SystemSystemMatch BoxMatch Box
Shuttle LiftShuttle Lift
RF GeneratorRF Generator
TMP ControlTMP Control
ReactorReactor
TMPTMP
Gas BoxGas Box
SystemSystem
Electronic controlElectronic control
Process pumping portProcess pumping portLiftLift
Gate valveGate valve
Match BoxMatch Box
Gas boxGas box
TMPTMP
Principle of PECVD Principle of PECVD ReactorReactor
Vacuum ChamberVacuum Chamber
ShuttleShuttle
TMP
Cathode (Gas inlet)
Compressed
Air
LiftLift
Principle of PECVD Principle of PECVD ReactorReactor
Vacuum ChamberVacuum Chamber
TMP
Cathode (Gas inlet)
Compressed
Air
LiftLift
ShuttleShuttle
Principle of PECVD Principle of PECVD ReactorReactor
Heating cableHeating cable
Vacuum ChamberVacuum Chamber
ShuttleShuttle
Compressed
Air
LiftLift
TMP
Infra-red reflectorsInfra-red reflectors
Cathode (Gas inlet)
ProcessProcesspumppump
Principle of PECVD Principle of PECVD ReactorReactor
Heating cableHeating cable
Vacuum ChamberVacuum Chamber
ShuttleShuttle
Compressed
Air
LiftLift
TMP
Cathode (Gas inlet)
ProcessProcesspumppump
Infra-red reflectorsInfra-red reflectors
RFMatch
P L A S M A
Laser InterferometerLaser Interferometer
PUMPING PRINCIPLE of PLASMA PUMPING PRINCIPLE of PLASMA REACTORREACTOR
Gas inletGas inlet
Process pumpProcess pump
PumpinPumpingg
ringring
VerticalVerticalpipespipes
Low half Low half pumpinpumpin
ggringring
ReactorReactor
ProcessProcesspumppump
Shuttle DownShuttle Down
Shuttle UpShuttle Up
SymetricSymetricalreactor alreactor for low for low stress stress
depositiodepositionn
PumpingPumpingpipepipe
ReactorReactor
LiftLift
Shuttle in Up positionShuttle in Up position
ProcessProcesspumppump
Shuttle in Down positionShuttle in Down position
Penning gaugePenning gauge
LiftLift
ProcessProcesspumppump
SymetricalSymetrical
pumpingpumping
ReactorReactor
REACTOR PRINCIPLEREACTOR PRINCIPLEPressurized Pressurized
reactorreactorP2P2
PLASMA
RootsRootsTMPTMP
P1P1
P1 >> P2P1 >> P2No film No film
contaminationcontamination
Outgasing from the Outgasing from the cold walls leads to film cold walls leads to film
contaminationcontamination
Cold wallsCold walls
PLASMA300°C300°C
Standard PECVDStandard PECVD
TMPTMP
CathodeCathode
AnodeAnode
CLEANING PRINCIPLECLEANING PRINCIPLE
Walls at 300Walls at 300°°CC
TMPTMP
Close gate valveClose gate valve
RootsRoots
CLEANING PRINCIPLECLEANING PRINCIPLE
Send N2Send N2
TMPTMP
Gate valve closedGate valve closed
RootsRoots
P2P2
Gas inletGas inlet
P1P1
P2 >> P1P2 >> P1 N2N2 goes in process chamber through the leaks goes in process chamber through the leaks
LeaksLeaks
CLEANING PRINCIPLECLEANING PRINCIPLE
Send N2Send N2
TMPTMP
Gate valve closedGate valve closed
RootsRoots
P2P2
Gas inletGas inlet
P1P1
P2 >> P1P2 >> P1
300°C
P1
No fluorine atoms can go in the process chamber.No fluorine atoms can go in the process chamber.
No corrosion of vacuum vessel.No corrosion of vacuum vessel.
The latest submicron technology needs precise monitoring:The latest submicron technology needs precise monitoring: Automatic endpoint detection,Automatic endpoint detection, CCD camera with magnification = 50 X,CCD camera with magnification = 50 X, Laser beam diameter ≤ 50 Laser beam diameter ≤ 50 m.m.
Monitoring DepositionMonitoring Deposition
A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.
The plasma confined The plasma confined in a in a uniformly uniformly heated process heated process chamberchamber
Excellent uniformitiesExcellent uniformities in in thickness and refractive thickness and refractive index.index.
Symetrical designSymetrical design of the process of the process chamberchamber
Stress controlStress control of films. of films.
In situ monitoringIn situ monitoring of deposition rate of deposition rate
Precise thicknessPrecise thickness of of deposited layersdeposited layers
In situ plasma In situ plasma cleaningcleaning with no with no corrosion of the corrosion of the process chamber. process chamber.
No memory effectNo memory effect No mechanical No mechanical cleaningcleaning
BENEFITSBENEFITS
DevelopmentDevelopment is is carried out through carried out through Design of Experiments Design of Experiments ((DOEDOE))
Optimisation of film Optimisation of film properties: properties:
deposition rate,deposition rate, refractive index,refractive index, uniformities (Thickness, uniformities (Thickness,
Index),Index), KOH, TMAH, etch rates,KOH, TMAH, etch rates, stress,stress, breakdown voltage.breakdown voltage.
Customer Customer BenefitBenefit
Process modelization Process modelization enables fast matching enables fast matching with customer with customer requirements.requirements.
Guaranteed Process Guaranteed Process ResultsResults
Process DevelopmentProcess Development
Some Process SpecificationsSome Process Specifications
Guaranteed Process Guaranteed Process ResultsResults
DepositioDeposition processn process
DepositioDeposition raten rate
(nm/min)(nm/min)
Etch rate Etch rate inin
KOH (Si3N4)KOH (Si3N4)
BOE BOE (SiO2)(SiO2)
CompresCompres-sive -sive stressstress
(MPa)(MPa)
BreakdowBreakdown voltagen voltage
(MV/cm)(MV/cm)
Refractive Refractive index index
uniformityuniformity
DepositioDeposition n
UniformitUniformityy
Si3N4Si3N4 120120 <10 nm/h<10 nm/h -150-150 // ±0,2%±0,2% ±2%±2%
SiO2SiO2 400400 // -100-100 // ±0,05%±0,05% ±2%±2%
SiO2SiO2 150150 260 260 nm/minnm/min
-30-30 1010 ±0,2%±0,2% ±2%±2%
Refractive Index Versus SiH4 and NH3 Flow Refractive Index Versus SiH4 and NH3 Flow RatesRates
Refractive Index Refractive Index = 2= 2
Si3N4 Refractive IndexSi3N4 Refractive Index
Stress Versus SiH4 and NH3 Flow Stress Versus SiH4 and NH3 Flow RatesRates Stress = -100 Stress = -100
MPaMPa
KOH Rate = 50 Å/hKOH Rate = 50 Å/h
Si3N4 Film PropertiesSi3N4 Film Properties
KOH Etch Rate Versus SiH4 and KOH Etch Rate Versus SiH4 and NH3NH3
Stress Versus SiH4 and NH3 Flow Stress Versus SiH4 and NH3 Flow RatesRates
Zero stress areaZero stress area
Si3N4 Film StressSi3N4 Film Stress
Refractive Index and RI uniformity versus pressure and N20 flow Refractive Index and RI uniformity versus pressure and N20 flow raterate
SiO2 Refractive IndexSiO2 Refractive Index
Refractive Index = 1.4570 ± 0.0005Refractive Index = 1.4570 ± 0.0005RI uniformity = ± 0.0005RI uniformity = ± 0.0005
Stress Versus Pressures and N2O Flow Stress Versus Pressures and N2O Flow RateRate
BOE Etch Rate Versus Pressure and BOE Etch Rate Versus Pressure and N2ON2O
Stress = - 50 MPaStress = - 50 MPa
BOE Rate < 250 nm/minBOE Rate < 250 nm/min
SiO2 Film PropertiesSiO2 Film Properties
SiO2 Breakdown VoltageSiO2 Breakdown VoltageBreakdown Voltage Versus Pressure and Breakdown Voltage Versus Pressure and SiH4SiH4
BreakdownBreakdownVoltage Voltage
= 10 MV/cm= 10 MV/cm
Multi-step process Multi-step process recipesrecipes enables perfect enables perfect and stable plasma and stable plasma ignition.ignition.
This gives rise to: This gives rise to: Repetitive film growth,Repetitive film growth, Good adhesion of films Good adhesion of films
on substrate,on substrate, Stable film properties.Stable film properties.
Process is terminated by Process is terminated by an Ar or He plasma in an Ar or He plasma in order to scavenge the order to scavenge the powders electrostatically powders electrostatically trapped in the plasma.trapped in the plasma.
This gives rise rise to: This gives rise rise to: No contamination of No contamination of
deposited films,deposited films, Shorter plasma cleaning,Shorter plasma cleaning, No pinhole.No pinhole.
Guaranteed Process Guaranteed Process ResultsResults
Process PerformanceProcess Performance
Corial D250 DescriptionCorial D250 DescriptionDeposition chamber, including:Deposition chamber, including: Vacuum vessel,Vacuum vessel, Pressurized isothermal plasma reactor,Pressurized isothermal plasma reactor, Uniform heating with two heating Uniform heating with two heating cablescables Temperature control of plasma reactor Temperature control of plasma reactor with Eurotherm 2408 and computor with Eurotherm 2408 and computor interface,interface, Infra-red reflectors.Infra-red reflectors.
Electronic control, including:Electronic control, including: Physical device controllers with Physical device controllers with embedded software running on Celeron embedded software running on Celeron 400 MHz, 128 Mo DRAM and fast 400 MHz, 128 Mo DRAM and fast ethernet,ethernet, Process controller with PC running at Process controller with PC running at 1.3 GHz, 512 Mo DRAM, fast ethernet 1.3 GHz, 512 Mo DRAM, fast ethernet communication and 80 Go hard disk.communication and 80 Go hard disk.
Pumping system with:Pumping system with: Alcatel dry pump ADP 122P (95 mAlcatel dry pump ADP 122P (95 m33/h),/h), Alcatel turbo pump ATH 31 C (30 l/s),Alcatel turbo pump ATH 31 C (30 l/s), Valves, Penning and two capacitance Valves, Penning and two capacitance gauges,gauges, Pressure control with N2 MFC,Pressure control with N2 MFC, N2 venting line.N2 venting line.
COSMA control software COSMA control software operating operating under Linux with Edit, Optimize, process under Linux with Edit, Optimize, process Run and Maintenance menus.Run and Maintenance menus.
PC PC operating under Windows with:operating under Windows with: Intel Pentium processor and 512 Mo Intel Pentium processor and 512 Mo RAM,RAM,17” LCD colour monitor,17” LCD colour monitor, Firewall and VPNFirewall and VPN..
Gas box equipped with Gas box equipped with 6 gas lines 6 gas lines with Horiba MFCs and electropneumatic with Horiba MFCs and electropneumatic valves for SiH4, N20, NH3, N2, He and valves for SiH4, N20, NH3, N2, He and SF6 gases.SF6 gases.
300 W RF generator and automatic 300 W RF generator and automatic match box match box from ENI.from ENI.
Very high quality of deposited films:Very high quality of deposited films: Tunable refractive indexTunable refractive index Low etch rates in BOE and KOHLow etch rates in BOE and KOH High breakdown voltageHigh breakdown voltage No pinholesNo pinholes
Excellent uniformitiesExcellent uniformities (thickness & refractive (thickness & refractive index)index)
Stress controlStress control of films from tensile to of films from tensile to compressivecompressive
Efficient in situ plasma cleaning with Efficient in situ plasma cleaning with NONO corrosion of vacuum vessel, corrosion of vacuum vessel, NONO memory effect memory effect and and NONO manual cleaning required. manual cleaning required.
Corial PECVD FeaturesCorial PECVD Features