corial 200 cosma software with: edit menu for process recipe edition, adjust menu for process...
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Corial 200Corial 200
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COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,
Adjust menu for process optimizing,Adjust menu for process optimizing,
Maintenance menus for complete equipment Maintenance menus for complete equipment
control via internet with VPN (Virtual Private control via internet with VPN (Virtual Private
Network).Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data
comparison).comparison).
Equipment Control & SoftwareEquipment Control & Software
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A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels
ActionActionss
ConstructorConstructor
LotsLotsActionsActions
ProcessProcess
Closed-loopClosed-loop
Server for Server for GUIGUI
COSMA COSMA SupervisorSupervisor
Embedded Embedded control PUcontrol PU
Embedded Embedded control control functionfunction
COSMA COSMA ControllerController
Process Process ControllerController
Device Device ControllersControllers
Physical Physical devicesdevices
OperatorOperator
Remote GUIRemote GUI
PC UserPC User
MonitorinMonitoringg
MonitorinMonitoringg
MonitorinMonitoringg
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Diagram ModesDiagram Modes
Stand-byStand-byModeMode
Step by stepStep by step
ModeMode
ProductionProductionModeMode
OptimizationOptimizationModeMode
ConstructorConstructorModeMode
Shut downShut downModeMode
NormalNormal
ErrorsErrors
OperatorOperator
ProductionProduction
MaintenanceMaintenance
ConstructorConstructor
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A Communicant ToolA Communicant Tool
COSMA COSMA SupervisorSupervisor
COSMACOSMAGUIGUI
Customer Customer Ethernet NetworkEthernet Network
Process Process Control Unit Control Unit
(1)(1)
Process Process Control Unit Control Unit
(2)(2)
Device Device Control (1)Control (1)
EthernetEthernet
Device Device Control (2)Control (2)
EthernetEthernet
WANWAN
VPNVPNADSLADSLFix IPFix IP
FirewalFirewalll
DedicatedDedicatedEthernet Ethernet networknetwork
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SystemSystemReactorReactor
TMPTMP
RF GeneratorRF Generator
UHF GeneratorUHF Generator
Cathode LiftCathode Lift
Electronic ControlElectronic Control
TMP ControlTMP Control
MagnetronMagnetron
HT/B
T P
ow
er
Supplie
sH
T/B
T P
ow
er
Supplie
s
Wir
ing Inte
rface
Wir
ing Inte
rface
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SystemSystem
TMPTMP
Throttle ValveThrottle Valve
Matching NetworkMatching NetworkLiftLift
IsolatorIsolator
MagnetronMagnetron
Gas boxGas box
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Pumping SystemPumping System
Dry PumpDry PumpADP 122ADP 122
TMPTMP
TVTV
ReactorReactor
Gate valve for Gate valve for quick reactor quick reactor
ventingventing
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New microwave (2.45 GHz) plasma New microwave (2.45 GHz) plasma source with source with hot walls to hot walls to reduce polymer condensation reduce polymer condensation and and to enhance plasma to enhance plasma cleaningcleaning. It produces High Density Plasma in a wide . It produces High Density Plasma in a wide working pressure range (working pressure range (10 to 100 mT10 to 100 mT) for ) for fast etchingfast etching of up of up to to Ø200 mm wafersØ200 mm wafers,,
Helium assisted heat exchangeHelium assisted heat exchange between cathode, shuttle and between cathode, shuttle and wafer or packaged die with mechanical clamping to maintain wafer or packaged die with mechanical clamping to maintain sample temperature belowsample temperature below 100°C100°C,,
Numerous plasma modes accessible in the same Numerous plasma modes accessible in the same process:process:
Microwave High Density Plasma + RF biasingMicrowave High Density Plasma + RF biasing
Reactive Ion EtchingReactive Ion Etching
Microwave High Density Plasma for silicon thinning.Microwave High Density Plasma for silicon thinning.
Reactor Features (1)Reactor Features (1)
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Reactor with hot walls enables:Reactor with hot walls enables: Highly selective processes,Highly selective processes, Low contamination of the process chamber.Low contamination of the process chamber.
Very low plasma potential Very low plasma potential (< 2 Volts)(< 2 Volts) and and automatic self bias regulation giving rise to automatic self bias regulation giving rise to precise control of low ion energy levels precise control of low ion energy levels (< 15 (< 15 eV),eV),
Enable low damage etching,Enable low damage etching, Minimal sputtering of metal lines,Minimal sputtering of metal lines, Isotropic and anisotropic etching.Isotropic and anisotropic etching.
Reactor Features (2)Reactor Features (2)
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Electron density : 10Electron density : 101111 to 10 to 101212 e/cme/cm33
PLASMAPLASMA
Magnetr
on
Magnetr
on
CouplingCoupling
DeviceDevice
High Density Plasma SourceHigh Density Plasma Source
Microwaves 2.45 GHzMicrowaves 2.45 GHz
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HDP Reactor DesignHDP Reactor Design
Coupling deviceCoupling deviceReactorReactor
Laser windowLaser window
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HDP Reactor DesignHDP Reactor Design
Coupling deviceCoupling deviceMicrowave cavityMicrowave cavity
Laser windowLaser window Gas shower Gas shower (Thermally isolated)(Thermally isolated)
Quartz tube and Quartz tube and shielding shielding (Thermally (Thermally isolated)isolated)
Reactor walls are Reactor walls are thermally isolatedthermally isolated. They are getting hot during . They are getting hot during etching. This enables selective etching of SiO2 against SiN, TiN and etching. This enables selective etching of SiO2 against SiN, TiN and polysilicon.polysilicon.
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LoadingLoading
CathodeCathode
Loading toolLoading tool ShuttleShuttle
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LoadingLoading
Loading toolLoading tool
CathodeCathodeShuttleShuttle
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ClampingClamping
Loading toolLoading tool
CathodeCathodeShuttleShuttle
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CoolingCooling
Loading toolLoading tool
CathodeCathodeShuttleShuttle
HeliumHelium
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EtchingEtching
Loading toolLoading tool
CathodeCathodeShuttleShuttle
HeliumHelium
PLASMAPLASMA
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End of EtchingEnd of Etching
Loading toolLoading tool
CathodeCathodeShuttleShuttle
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UnloadingUnloading
CathodeCathodeLoading toolLoading tool ShuttleShuttle
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UnloadingUnloading
Loading toolLoading tool ShuttleShuttle
CathodeCathode
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Specifications : HDP + RF biasingSpecifications : HDP + RF biasing
ProcessProcess UnderlayerUnderlayer Etch RateEtch Rate(µm/min)(µm/min) SelectivitySelectivity
PolyimidePolyimide
Si3N4Si3N4
SiO2SiO2
SiO2 / TiN SiO2 / TiN (*)(*)(High selectivity)(High selectivity)
Si3N4Si3N4
SiO2SiO2
SiO2SiO2
TiNTiN
>50>50
33
11
>20>20
33
0.50.5
0.20.2
0.050.05
Some Process SpecificationsSome Process Specifications
(*) High selectivity requires temperature control of the sample to (*) High selectivity requires temperature control of the sample to etch.etch.
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Control of sample temperature by He Control of sample temperature by He cooling: cooling:
Prevents metal lines lift-off,Prevents metal lines lift-off, Maintains electrical functionality.Maintains electrical functionality.
CathodeCathodeShuttleShuttle
Helium Backside CoolingHelium Backside Cooling
PLASMAPLASMA
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Pression He en fonction du débit- He Pressure Versus He Flow Rate -
0 5 10 15 20 2500
5
10
15
0
Débit He - He Flow Rate - (sccm)Débit He - He Flow Rate - (sccm)
Pre
ssio
n H
e (
Torr
s)Pre
ssio
n H
e (
Torr
s)-
He
Pre
ssure
-Pre
ssure
-
He Pressure vs He Flow RateHe Pressure vs He Flow Rate
Work AreaWork Area
GoalGoal:: Ensure wafer cooling Ensure wafer cooling
The The shuttles are designedshuttles are designed according to wafer size, the shape of according to wafer size, the shape of packaged dies packaged dies for optimum process resultsfor optimum process results. The use of . The use of dedicated shuttles according to sample to etch facilitates the dedicated shuttles according to sample to etch facilitates the use of the system.use of the system.
Altymid Altymid RingRing
WaferWafer
O’ RingO’ Ring
Base PlateBase Plate
Graphite PlateGraphite Plate
Example of ShuttleExample of Shuttle
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Shuttle for Packaged DiesShuttle for Packaged Dies
Altymid RingAltymid Ring
Graphite CoverGraphite Cover
Packaged Die Bonded With Packaged Die Bonded With Vacuum Grease on Package Vacuum Grease on Package AdaptorAdaptor
O’ringO’ring
Base PlateBase Plate
GoalGoal:: Ensure packaged Ensure packageddie coolingdie cooling
He PressureHe Pressure > 80 Torrs > 80 Torrswith 25 sccm of He flowwith 25 sccm of He flowto ensure good cooling.to ensure good cooling.
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The latest submicron technology needs precise delayering:The latest submicron technology needs precise delayering: Automatic endpoint detection,Automatic endpoint detection, CCD camera with magnification > 120 X,CCD camera with magnification > 120 X, Laser beam diameter ≤ 20 Laser beam diameter ≤ 20 m.m.
Preventing OveretchPreventing Overetch
A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.
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Interferences lead to a periodic signal having a Interferences lead to a periodic signal having a /2n period versus /2n period versus timetime
InterferencesInterferences
PhotodiodePhotodiode
Laser Endpoint DetectionLaser Endpoint Detection
Reflected beam Reflected beam 11
Interface 1Interface 1
UnderlayerUnderlayerInterface 2Interface 2 Refractive Index Refractive Index
= n= n
TimeTime
Sig
nal
Sig
nal
Laser beamLaser beam
Reflected beam Reflected beam 22
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Laser Endpoint DetectionLaser Endpoint Detection
Al
Si3N4
SiO2
Si
Laser Laser beambeam
AlSiO2
Si
Laser Laser beambeam
Laser Laser beambeam
AlSiO2
Si
Al reflects the laser, there is no interference effect.