confronto 340e - 382. mappe a –200 v yield: 74 % 340e 21 % yield: 21 % 382
TRANSCRIPT
CONFRONTO340e - 382
Mappe a –200 V
Yield: 74 %
340eYield: 21 %
382
Mappe a -600V
Yield 68%Yield 16%
Caratteristiche dirette
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
SAMPLE 382n = 1.06 + 0.03 = (1.60 +0.03) eV
Cur
rent
(A
)
Forward bias (V)0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
SAMPLE 340en = 1.10 + 0.04 = (1.54 + 0.05) eV
Cur
rent
(A
)
Forward bias (V)
1.4 1.6 1.8 2.0 2.20.0
0.2
0.4
0.6
N
orm
aliz
ed Y
ield
(%
)
Voltage at I = 0.2 A
340e 382
Electron mobility
1.0 1.2 1.4 1.6 1.80
200
400
600
800
literature experimental
Ele
ctro
n m
obili
ty (
cm2 /V
s)
Dopant concentration (x 1016
cm-3)
Correnti inverse a –200V
-9 -8 -7 -60.0
0.2
0.4
0.6
0.8
1.0
Nor
mal
yzed
yie
ld
Sample: 340e
Iavg
= 3.25 x 10-8 A
10 10 10 10
Reverse leakage current at -200V (A)
-9 -8 -7 -60,0
0,2
0,4
0,6
0,8
1,0
Nor
mal
yzed
yie
ld
Sample: 382
Iavg= 9 x 10-9 A
10 10 10 10
Reverse leakage current at -200V (A)
Correnti inverse a -600V
-7 -6 -5 -40.0
0.2
0.4
0.6
0.8
1.0
Nor
mal
yzed
yie
ld
Sample: 340e
Iavg= 1.7 x 10-5 A
10 10 10 10
Reverse leakage current at -600V (A)
-7 -6 -5 -40.0
0.2
0.4
0.6
0.8
1.0
Nor
mal
yzed
yie
ld
Sample: 382
Iavg
= 2 x 10-6 A
10 10 10 1010 10 10 10
Reverse leakage current at -600V (A)
Caratteristiche inverse
-600 -500 -400 -300 -200 -100 010-10
10-9
10-8
10-7
10-6
10-5
10-4
340e
I (A
)
Reverse bias (V)-600 -500 -400 -300 -200 -100 0
10-10
10-9
10-8
10-7
10-6
1x10-5
1x10-4
382
I (A
)
Reverse bias (V)
Disuniformità 382
-600 -500 -400 -300 -200 -100 010-10
10-9
10-8
10-7
10-6
10-5
10-4
382 da 2 a 29 da 338 a 364
I (A
)
Reverse bias (V)
-600 -500 -400 -300 -200 -100 010
-10
10-9
10-8
10-7
10-6
10-5
10-4
up
flat
382 #349 N
D = 1.73E16
#350 ND = 1.69E16
#343 ND = 1.52E16
#307 ND = 1.45E16
#291 ND = 1.33E16
#248 ND = 1.30E16
#228 ND = 1.22E16
the rest from 1.08E16 to 1.19E16
I (A
)
Reverse bias (V)0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10-7
10-6
10-5
10-4
Sample 382
I at
V=-
600
V (
A)
ND (1016 cm-3)
Non si apprezzano differenze significative nelle caratteristiche dirette al variare della concentrazione di drogante
1.2 1.4 1.6 1.8 2.00
1
simulated
Dopant concentration
1.08E16 (cm-3)
1.73E16 (cm-3)
Cur
rent
(A
)
Forward bias (V)1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
0.0
0.2
0.4
0.6
0.8
1.0 experimental simulated
I on(1
.5 V
) (A
)
Dopant concentration (x 1016
cm-3)
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.810
4
105
106
107
I on(2
V)/
I off(-
600
V)
Dopant concentration (x 1016
cm-3)
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.80.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10errato
I on(2
V)
Dopant concentration (x 1016
cm-3)
1x1015
10-7
10-6
10-5
10-4
Sample 382
Rev
erse
cur
rent
at V
= -6
00 V
(A
)
Trap concentration (cm-3)
Correlazione tra intensità di corrente e difetti
1x1015
0.4
0.5
0.6
0.7
0.8Sample 382
Forw
ard
curr
ent a
t V=
1.5
V (
A)
Trap concentration (cm-3)
-600 -500 -400 -300 -200 -100 010
-9
10-8
10-7
10-6
10-5
10-4
382 diode n.13 simile al 41
ND = 1.19 x 1016
(cm-3)
T = 25°C
300°C
25°C
Rev
erse
cur
rent
(A)
Reverse bias (V)
-600 -500 -400 -300 -200 -100 0
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5 Diode #184
25 C 50 C 75 C 100 C 125 C 150 C 175 C 200 C 225 C 250 C
I (A
)
reverse bias (V)
-600 -500 -400 -300 -200 -100 010-9
10-8
10-7
10-6
10-5
10-4
25°C
300°C
382 diode 248
ND = 1.30 x 1016
(cm-3)
T = 25°C
Rev
erse
cur
rent
(A
)
Reverse bias (V)
-600 -500 -400 -300 -200 -100 010
-10
10-9
10-8
10-7
10-6
10-5
10-4
300°C
25°C
382 SAMPLE 242
I (A
)
Reverse bias (V)
-600 -500 -400 -300 -200 -100 010
-10
10-9
10-8
10-7
10-6
10-5
10-4
200°C
25°C
382-sample 347
ND=1.6E16/cm
3
I (A
)
Reverse bias (V)
-200 -150 -100 -50 010
-11
10-10
10-9
10-8
10-7
340e 237 N
D=1.00e17
362 ND=1.44e16
282 ND=1.35e16
29 ND=1.34e16
89 ND=1.30e16
107 ND=1.29e16
I (A
)
Reverse bias (V)
-600 -500 -400 -300 -200 -100 010
-10
10-9
10-8
10-7
10-6
10-5
10-4
340e 237 N
D=1.00e17
362 ND=1.44e16
282 ND=1.35e16
89 ND=1.30e16
107 ND=1.29e16
29 ND=1.34e16
I (A
)
Reverse bias (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.010-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
340e 237 N
D=1.00e17
362 ND=1.44e16
282 ND=1.35e16
29 ND=1.34e16
89 ND=1.30e16
107 ND=1.29e16
I (A
)
Reverse bias (V)
Non si notano correlazioni evidenti tra le caratteristiche dirette e le concentrazioni di drogante
Breakdown
-1000 -800 -600 -400 -200 010-9
10-8
10-7
10-6
1x10-5
1x10-4
10-3
10-2
382 (229-191) 340e (76-237up)
Cur
rent
Den
sity
(A
/cm
2 )
Reverse Bias (V)
103 104 105 106 1071E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1 382 340e
Cur
rent
den
sity
(A
/cm
2 )
Electrical field (V/cm)
0,0 0,5 1,0 1,5 2,01E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0,01
0,1
1 382 340e
Cur
rent
den
sity
(A
/cm
2 )
Electrical field (MV/cm)
Barrier height vs ideality factor
1.00 1.02 1.04 1.06 1.08 1.10 1.121.50
1.52
1.54
1.56
1.58
1.60
1.62
1.64
1.66
1.68
1.70
382 340e
qB (
eV)
Ideality factor
Richardson plot
18 20 22 24 26 28 30 32 34 36 38 4010
-2810
-2710
-2610
-2510
-2410
-2310
-2210
-2110
-2010
-1910
-1810
-1710
-1610
-1510
-14
340e (118)
A*= (25 + 7) A/cm
2K
2
qB=(1.56 + 0.006) eV
382 (98)
A*= (41 + 25) A/cm
2K
2
qB=(1.63 + 0.009) eV
I s/T2 (
A/K
2 )
1/kBT (eV
-1)
Dopant concentration
0 10 20 30 40 501.0
1.2
1.4
1.6
1.8
2.0
382 340e
N c
once
ntra
tion
(x 1
016cm
-3)
Flat distance (mm)
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.41E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
382diode n.185 N
D= 1.19E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
(A
)
Forward bias (V)
0.6 0.8 1.0 1.2 1.41E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
382diode n.185 N
D= 1.19E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
den
sity
(A
/mm
2 )
Forward bias (V)2 4 6 8
0.00
0.05
0.10
0.15
0.20
0.25
0.30 V = 1.5 V
J (A
/mm
2 )
p/A (mm-1)
2.0x10-6
4.0x10-6
6.0x10-6
8.0x10-6
1.0x10-5
V = 1 V
Diode area forward
characteristics
Diode area reverse
characteristics
-200 -100 010
-11
10-10
10-9
10-8
10-7
382diode n.185 N
D= 1.15E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
(A
)
Reverse bias (V)
-200 -100 010
-11
10-10
10-9
10-8
10-7
382diode n.185 N
D= 1.15E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
den
sity
(A
/mm
2 )
Reverse bias (V)-200 -100 0
10-11
10-10
10-9
10-8
10-7
382diode n.185 N
D= 1.15E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
J/(p
/A)
(A/m
m)
Reverse bias (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
382diode n.185 N
D= 1.15E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
I/p
(A/m
m)
Forward bias (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
382diode n.307 N
D= 1.45E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
(A
)
Forward bias (V)
382
diode n. 307
-200 -100 010
-11
10-10
10-9
10-8
10-7
382diode n.307 N
D= 1.45E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
(A
)
Reverse bias (V)-200 -100 0
10-11
10-10
10-9
10-8
10-7
382diode n.307 N
D= 1.45E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
J/(p
/A)
Reverse bias (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
382diode n.343 N
D= 1.52E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
(A
)
Forward bias (V)
382
diode n. 343
-200 -100 010-11
10-10
10-9
10-8
10-7
382diode n.343 N
D= 1.52E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
Cur
rent
(A
)
Reverse bias (V)-200 -100 0
10-11
10-10
10-9
10-8
10-7
382diode n.343 N
D= 1.52E16
A = 0.25 mm2
A = 1 mm2
A = 2 mm2
J/(p
/A)
Reverse bias (V)
0 -100 -200 -300 -400 -500 -6001E-8
1E-7
1E-6
1E-5
1E-4
1E-3
experimental
0.25 mm2
1 mm2
2 mm2
382 sample 291ND= 1.33e16
Cu
rre
nt
de
nsi
ty (
A/c
m2 )
Reverse bias (V)0 -100 -200 -300 -400 -500 -600
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
experimental
0.25 mm2
1 mm2
2 mm2
382 sample 291N
D= 1.33e16
J/(p
/A)
(A/c
m)
Reverse bias (V)
0 -100 -200 -300 -400 -500 -6001E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.25 mm2
1 mm2
2 mm2
382 sample 291N
D= 1.33e16
Cur
ren
t den
sity
(A
/cm
2 )
Reverse bias (V)
0 -100 -200 -300 -400 -500 -6001E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.25 mm2
1 mm2
2 mm2
382 sample 291N
D= 1.33e16
J/(p
/A)
(A/c
m)
Reverse bias (V)