comparison of full and analytic simulations
DESCRIPTION
Comparison of Full andAnalytic SimulationsSalim Aoulmit, Lakhdar Dehimi, Achour Saadoune(LMSM Laboratory Biskra U)Craig Buttar, Dima Maneuski(Glasgow U)Chris Bowdery, Michal Koziel, André Sopczak(Lancaster U)TRANSCRIPT
L.Dehimi 29-6-2007 1
Comparison of Full and Analytic Simulations
Salim Aoulmit, Lakhdar Dehimi, Achour Saadoune(LMSM Laboratory Biskra U)Craig Buttar, Dima Maneuski
(Glasgow U)Chris Bowdery, Michal Koziel, André Sopczak
(Lancaster U)
L.Dehimi 29-6-2007 2
Motivation
• Further understanding of the ISE Simulation Results (Full Simulation) for the 2-phase CP-CCD.
• Development of Analytical Model and comparison with Full Simulation.
• Studying the effect of Occupancy.• Longer term: Fast CTI determination over
a larger range of temperatures.
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Introduction• Recall: good agreement between
Analytical Model and 3-phase CCD58 Full Simulation.
• Difference between 3-phase and 2-phase: - The shift time is tsh=1/2*f- Factor of 2 (2 nodes) instead of 3 (3-nodes).
• Effect of occupancy on CTI value is introduced by correlation of waiting time and clock frequency.
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Model (ref : T. Hardy IEEE 98)
( )
packetparent he t
joincan charges which theduring periode time theis packet previous thefrom imeemission t total theis where
3
join
wemit
tt
s
t
ttt
eenNCTI eemitejoin
=
−= −− ττ
shc t<<τ
● The model considers the effect of a single trapping level and include the
emission time only in the following differential equation :
● Traps initially filled
●
trapsfilled ofdensity theis n where te
tt ndtdn
τ−=
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Hardy paper considers :
● filled traps
●
( )( )eecsh temittjoint
s
eeenNtCTI τττ −−− −−= 1*2
csht τ>>
csht τ<<Or in our case:
Analytical model is given by:
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Input Parameters
• Trap concentration: 1e11/cm3• Occupancy occ: 1% • Signal charge density Ns: 4.5e14/cm3• Frequency f: 50, 25, 10 MHz• Shift time: 1/2f• Waiting time tw: 1/(occ*f)
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0.17eV traps. 50MHz
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0.44eV traps. 50MHz
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Occupancy Study
• Simultaneous change of occupancy occand waiting time tw.
• At very high temperatures, the emission time is very short, and independent of the occupancy traps are empty when the next charge package arrives.
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Occupancy 0.17eV traps. 50MHz
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Occupancy 0.17eV traps. 25MHz
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Occupancy 0.44eV traps. 50MHz
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Occupancy 0.44eV traps. 25MHz
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Occupancy 0.44eV traps. 10MHz
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Conclusions/Outlook• CP-CCD: Glasgow and Lancaster full simulations agree
well.• For 0.17eV traps: analytical and full simulations also
agree well, and for low temperature region analytical model predicts CTI values.
• For 0.44eV traps, analytical simulations agree much better with full simulations compared to CCD-58.
• Reason: Improvement to analytical model: tjoin used for 0.44eV is larger than the one used for 0.17eV. Also improvement for CCD-58 agrrement possible.
• Occupancy study is consistent with Konstantin’s work (PhD thesis pp57-58). Further comparisons with full simulation needed.