cp-ccd comparisons of full and analytic simulations

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  • 8/6/2019 CP-CCD Comparisons of Full and Analytic Simulations

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    120 140 160 180 200 220 2400

    0.05

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    Full Sim Glasgow

    Full Sim Lancaster

    50 MHz

    0.17 eV1e12/cm3Occ=1%

    CP-CCD Comparisons of Full and Analytic Simulations

    13-7-2007

    1) Introduction

    This report describes the comparisons of full and fast analytic simulations for the

    prototype CP-CCD. The influence of frequency is studied and compared to the full

    simulation done by Lancaster and Glasgow group. Systematic uncertainties for the

    fast analytic model are studied by means of occupancy, shift time and joining time.

    The effects of radiation damage in a particular detector are studied by examining two

    electron trap levels: the 0.17 eV and 0.44 eV below the bottom of the conduction

    band.

    2) Comparisons of Different Full Simulations

    a) Glasgow-Lancaster 0.17eV Traps

    Fig 1 a: CTI vs Temperature for full simulation results of lancaster and Glasgow

    for 0.17 eV at 50 MHz

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    250 300 350 400 450 500 5500

    0.02

    0.04

    0.06

    0.08

    0.1

    0.12

    Temperature (K)

    CTI(%)

    Full Sim Glasgow

    Full Sim Lancaster

    0.44 eV1e12/cm3

    50 MHzOcc=1%

    b) Glasgow-Lancaster 0.44eV Traps

    Fig 1 b: CTI vs Temperature for full simulation results of lancaster and Glasgow

    for 0.44 eV at 50 MHz

    3) Analytical model

    a) General Model

    The model considers the effect of a single trapping level and include the emission

    time only in the following differential equation:

    The traps are initially filled for this model and (Hardy) . Neverthless, to be

    consistant with the DESSIS simulations(that use partially filled traps) the analytical

    model uses a time constant between the filling of the traps such that the traps remain

    partially filled when the new electron packet passes through the CPCCD. In the

    analytical model , so we include the capture process in the model neglected in

    Hardy model. Therefore the solution of this differential equation leads to an estimator

    of the CTI.

    Where

    temit is the total emission time from the previous packet=tw, which means

    waiting time between two charges packets related to the mean occupancy of

    pixels in the device.

    tjoin is the time during which the charges can join their parent packet

    tsh is the shift time, that is the time spend under each node.

    The 2 factor means here we considered that the same phenomena happens at each

    node, such as, shift time is the same.

    2

    ( )( )etemitetjoincsht

    s

    eeen

    NtCTI

    =12

    trapsfilledofdensitytheisnwheret

    e

    ttn

    dt

    dn

    =shct

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    We consider one pixel:

    ( ) ( )c

    s

    s

    t

    c

    s

    f

    rt

    Af

    r

    +=

    1exp0

    11(6)

    ( ) ( )

    =

    e

    AfBf

    ttrtr

    2

    1121exp (7)

    ( ) ( )c

    s

    sc

    s

    fBf

    trtr

    +

    = 2

    22exp0 (8)

    ( ) ( )

    = eBfCf

    t

    trtr

    1

    2212 exp (9)

    So the CTI is the sum of the CTI under each node

    21CTICTICTI += (10)

    ( ) ( ) ( ){ }021221 fCfBf

    s

    t rtrtrN

    NCTI += (11)

    rf(0) is defined by considering the fact that initially all taps are filled and emit during

    the waiting time and then:

    One pixel

    0

    t1

    t2

    t

    A

    B

    1 2

    C

    4

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    ( )

    =

    e

    w

    f

    tr

    exp0 (12)

    From equations 6 to 12 we obtain:

    +

    +

    +++

    =

    es

    es

    c

    s

    e

    w

    tt

    tt

    t

    e

    t

    s

    t

    e

    t

    s

    t

    sN

    tN

    C T I

    12

    21

    e x pe x p1

    e x pe x p1

    e x p212

    e x p21

    e x p

    (13)

    In the case where the time spending under each node is the same (t1=t2) we have

    +

    +=

    e

    wt

    e

    t

    es

    t

    s

    t

    e

    s

    ec

    t

    sn

    tN

    CTI

    expexp

    11exp1

    exp1

    21exp12

    14)

    5

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    100 120 140 160 180 200 220 2400

    0.5

    1

    1.5

    2

    2.5x 10

    -3

    Temperature (K)

    CTI

    Analytical Model Occ=1%

    Imp AM

    Full Sim

    6

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    200 250 300 350 400 450 500 5500

    0.2

    0.4

    0.6

    0.8

    1

    1.2x 10

    -3

    Temperature (K)

    CTI

    Analytical Model Occ=1

    IMp AM

    Full Sim

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    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    ImpAM

    AM0.17 eV1e12/cm350 MHzOcc=1%

    80 100 120 140 160 180 200 2200

    0.15

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    ImpAM

    AM

    Lancs Full Sim

    0.17 eV1e12/cm350 MHzOcc=1%

    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    Temperature (K)

    CTI(%)

    ImpAM

    AM

    0.44eV1e12/cm350 MHzOcc=1%

    c) omparison with Full Simulations 0.17eV Traps.

    Fig2.a: CTI vs temperature for Analytical model(AM) and the Improved

    Ananlytical model (ImpAM),for the 0.17 eV trap at 50MHz.

    Fig2.b : CTI vs temperature of Analytical model(AM), Improved model (ImpAM) and Lancaster

    full simulation for the 0.17 eV trap at 50MHz.

    d) Comparison with Full Simulations 0.44eV Traps

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    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    Temperature (K)

    CTI(%)

    ImpAM

    AM

    Lancs Full Sim

    0.44 eV1e12/cm350 MHzOcc=1%

    Fig3.a : CTI vs temperature for Analytical model(AM) and the Improved model (ImpAM)

    for the 0.44 eV trap at 50MHz.

    Fig3.b : CTI vs temperature of Analytical model(AM), Improved model (ImpAM) and Lancaster full

    simulation for the 0.44 eV trap at 50MHz

    For 0.17 eV the analytical Improved model agree well with lancaster full

    simulation as in fig2.b.

    For 0.44 eV the analytical Improved model agree well with lancaster fullsimulation as in fig3.b.

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    1010

    1011

    1012

    10-3

    10-2

    10-1

    50 MHz

    0.17 eV

    Occ= 1%

    CTI(%)

    Trap concentration (cm-3)

    T=160K

    T=185K

    We can see clearly from fig2.a and fig 3.a, that the main diffrence is from peak

    temperature.

    e) CTI vs Trap concentration

    Fig4: CTI vs Trap concentration for two different temperatures

    Figure 4 shows the CTI against concentration traps for the 0.17 eV at 50 MHz for twodifferent temperatures. The CTI varied linearly with a factor of 1 with trap

    concentration.

    f) Variation of Frequency

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    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    0.4

    0.45

    Temperature (K)

    CTI(%)

    ImpAM 50 MHz

    ImpAM 25 MHz

    ImpAM 10 MHz

    0.17 eV1e12/cm3Occ=1%tjoin=2tsh

    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    0.4

    0.45

    Temperature (K)

    CTI(%)

    ImpAM 50 MHz

    ImpAM 25 MHz

    ImpAM 10 MHz

    0.17 eV1e12/cm3Occ=1%tjoin=tsh

    250 300 350 400 450 500 5500

    0.05

    0.11

    0.15

    0.2

    0.25

    0.3

    0.35

    Temperature (K)

    CTI(%)

    ImpAM 50 MHz

    ImpAM 25 MHz

    ImpAM 10 MHz0.44 eV1e12/cm3Occ=1%tjoin=tsh

    Fig 5 a: CTI vs temperature for different frequencies for 0.17 eV .

    Fig 5.b: CTI vs temperature for different frequencies for 0.17 eV .

    Figure 5.a and figure 5.b show the frequency effect on the CTI with tjoin as

    parameter.The CTI peak increase and shift to low temperature as the frequency

    decrease. The tjoin affect only the region from peak temperature and reduc the CTI

    value.

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    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    Temperature (K)

    CTI(%)

    ImpAM 50 MHz

    ImpAM 25 MHz

    ImpAM 50 MHz0.44 eV1e12/cm3Occ=1%tjoin=2tsh

    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    ImpAm Occ=0.1%

    ImpAm Occ=1 %

    ImpAm Occ=5 %

    0.17 eV1e12/cm350 MHztjoin=tsh

    Fig 6.a: CTI vs temperature for different frequencies for 0.44 eV .

    Fig 6.b: CTI vs temperature for different frequencies for 0.44 eV .

    Figure 6.a and figure6.b show the frequency effect on the CTI with tjoin as

    parameter.The CTI peak increase and shift to low temperature as the frequency

    decrease. The tjoin affect only the region from peak temperature and reduc the CTI

    value.

    g) Variation of Occupancy Level

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    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    Temperature (K)

    CTI(%)

    ImpAM Occ=0.1%

    ImpAM Occ=1%

    ImpAM Occ=5%

    0.17 eV1e12/cm325 MHztjoin = tsh

    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    0.2

    0.45

    Temperature (K)

    CTI(%)

    lmpAM Occ=0.1%

    lmpAM Occ=1%

    lmpAM Occ=5%

    0.17 eV1e12/cm310 MHztjoin=tsh

    Fig7.a: CTI vs temperature for different occupancy for 0.17 eV at 50 MHz.

    Fig7.b: CTI vs temperature for different occupancy for 0.17 eV at 25 MHz.

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    0

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    Temperature (K)

    CTI(%)

    ImpAM Occ=0.1%

    ImpAM Occ=1%

    ImpAM Occ=5%

    0.44 eV1e12/cm350 MHztjoin = tsh

    Fig7.c: CTI vs temperature for different occupancy for 0.17 eV at 10 MHz.

    The effect of occupancy on CTI is shown in figure 7a,b,c for the 0.17 eV with

    tjoin equal tshift (tjoin=tsh). As the occupancy decreases the CTI peak

    temperature increases and become larger with increasing frequency.

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    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    0.2

    Temperature (K)

    CTI(%)

    ImpAM Occ=0.1%

    ImpAM Occ=1%

    ImpAM Occ=5%

    0.44 eV1e12/cm325 MHztjoin = tsh

    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    Temperature (K)

    CTI(%)

    ImpAM Occ=0.1%

    ImpAM Occ=1%

    ImpAM Occ=5%

    0.44 eV1e12/cm310 MHztjoin = tsh

    Fig8.a: CTI vs temperature for different occupancy for 0.44 eV at 50 MHz.

    Fig8.b: CTI vs temperature for different occupancy for 0.44 eV at 25 MHz.

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    fig8.c: CTI vs temperature for different occupancy for 0.44 eV at 10 MHz.

    Same effect of occupancy on CTI is shown in figure 8a,b,c for the 0.44 eV with

    tjoin equal tshift (tjoin=tsh). As the occupancy decreases the CTI peak

    temperature increases and become larger with increasing frequency.

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    0

    0.05

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    tjoin=0.5 tsh

    tjoin=tsh

    tjoin=2 tsh

    0.17 eV1e12/cm350 MHzOcc= 1%

    0 1 2 3 4 5

    40

    50

    60

    70

    80

    90

    100

    W

    idth(K)

    Occupancy (%)

    0.17 eV

    0.44 eV

    0 1 2 3 4 5

    0.25

    0.30

    0.35

    0.40

    CTImax(%)

    Occupancy (%)

    0.17 eV

    0.44 eV

    Fig9: Width vs Occupancy for both traps 0.17 eV and 0.44 eV at 10 MHz.

    Figure 9 show the width at half way versus occupancy for both traps (0.17 eV and0.44 eV), the width decrease as occupancy increase, that means traps mainley

    filled as occupancy increases

    Fig10: CTI max vs Occupancy for both traps 0.17 eV and 0.44 eV at 10 MHz.The amplitude of CTI max decrease with the incresing occupancy (Fig10).

    h) Systematic Unvertainties

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    100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    Temperature (K)

    CTI(%)

    ImpAM tjoin=0.5 tsh

    ImpAM tjoin=tsh

    ImpAM tjoin=0.5 tsh

    0.17 eV1e12/cm325 MHz

    Occ= 1%

    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    0.4

    0.45

    Temperature (K)

    CTI(%)

    ImpAM tjoin=0.5tsh

    ImpAM tjoin=tsh

    ImpAM tjoin=2tsh

    0.17 eV1e12/cm310 MHzOcc= 1%

    Fig11.a: CTI vs temperature for different tjoin for 0.17 eV at 50 MHz.

    Fig11.b: CTI vs temperature for different tjoin for 0.17 eV at 25 MHz.

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    0

    0.05

    0.1

    0.15

    Temperature (K)

    CTI(%)

    ImpAM tjoin=0.5 tsh

    ImpAM tjoin=tsh

    ImpAM tjoin=2 tsh

    0.44 eV1e12/cm350 MHzOcc= 1%

    100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    Imp AM tjoin=0.5 tsh

    Imp AM tjoin=tsh

    Imp AM tjoin=2 tsh

    Lancs Full Sim

    0.17 eV1e12/cm350 MHzOcc=1%

    Fig11.c: CTI vs temperature for different tjoin for 0.17 eV at 10 MHz.

    Fig12.d: CTI vs temperature for different tjoin compared with Lancaster Full

    Simulation for 0.17 eV at 50 MHz.

    For the 0.17 eV, figure 12.d, shows that the analytical improved model agree well

    with Lancaster full simulation for the tjoin equal one shift time (tjoin=tsh).

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    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    ImpAM tjoin=0.5 tsh

    ImpAM tjoin=tsh

    ImpAM tjoin=2 tsh

    0.44 eV1e12/cm325 MHzOcc= 1%

    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    0.2

    0.25

    0.3

    0.35

    Temperature (K)

    CTI(%)

    ImpAM tjoin=0.5tsh

    ImpAM tjoin=tsh

    ImpAM tjoin=2tsh

    0.44 eV1e12/cm310 MHzOcc= 1%

    Fig13.a: CTI vs temperature for different tjoin for 0.44 eV at 50 MHz.

    Fig13.b: CTI vs temperature for different tjoin for 0.44 eV at 25 MHz.

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    0

    0.02

    0.04

    0.06

    0.08

    0.1

    0.12

    Temperature (K)

    CTI(%)

    ImpAM tjoin=0.5tsh (AM)

    ImpAM tjoin=tsh

    ImpAM tjoin=2tsh

    Glasg Full Sim

    0.44 eV1e12/cm350 MHzOcc=1%

    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    Temperature (K)

    CTI(%)

    ImpAM tjoin=0.5 tsh (AM)

    ImpAM tjoin=tsh

    ImpAM tjoin=2 tsh

    Lancs Full Sim

    0.44 eV1e12/cm350 MHzOcc=1%

    Fig13.c: CTI vs temperature for different tjoin for 0.44 eV at 10 MHz.

    Fig13.d: CTI vs temperature for different tjoin compared with Lancaster FullSimulation for 0.44 eV at 50 MHz.

    For the 0.44 eV, figure 13.d, shows that the analytical improved model agree well

    with Lancaster full simulation for the tjoin equal two shift time (tjoin=2tsh).

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    10-10

    10-9

    10-8

    10-7

    10-6

    10-5

    10-4

    10-3

    Temperature (K)

    Constanttime(s)

    Emission time

    Capture time

    Shift time

    0.17 eV1e12/cm350 MHz

    Peakposition

    Fig13.e: CTI vs temperature for different tjoin compared with Glasgow Full

    Simulation for 0.44 eV at 50 MHz.

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    250 300 350 400 450 500 55010

    -9

    10-8

    10-7

    10-6

    10-5

    10-4

    10-3

    Temperature (K)

    Constanttime(s)

    Emission time

    Capture time

    Shift time

    0.44 eV1e12/cm350 MHz

    Peakposition

    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.2

    0.25

    Temperature (K)

    CTI(%)

    ImpAM tsh1=tsh2=0.5/f (AM)

    ImpAM tsh1=2/3f tsh2=1/3f

    ImpAM tsh1=3/4f tsh2=1/4f

    0.17 eV1e12/cm350 MHzOcc= 1%

    Fig14.a : Time constant vs temperature for 0.17 eV and 50 MHz.

    Fig14.b : Time constant vs temperature for 0.44 eV and 50 MHz.

    In ordre to explain the change of tjoin with trap level. Figure 14a,b show time

    constant versus temperature, we can observe quickly that the the capture time is

    about twice for 0.44eV (toc=3.226e-8)than that of 0.17 eV (1.51e-8).

    The raio 89.144.044.0

    17.017.0

    =

    ce

    ce

    . The emission time is closer to capture time for 0.44

    eV than that of 0.17 eV, So the charges losses for 0.44 eV need more time to join

    their parent packet. Because of the uncertainty of the partition function

    (HARDY), we will assume that the time period during which the charges can join

    their parent packet s different. We may think that the real vale of tjoin for 0.44 eV

    is (1

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    80 100 120 140 160 180 200 2200

    0.05

    0.1

    0.15

    0.20

    0.25

    0.30

    Temperature (K)

    CTI(%)

    ImpAM tsh1=tsh2=1/2f (AM)

    ImpAM tsh1= 2/3f tsh2=1/3f

    ImpAM tsh1=3/4f tsh2=1/4f

    Lancs Full Sim

    0.17 eV1e12/cm350 MHzOcc 1%

    Fig15.a: CTI vs temperature for different shift time for 0.17 eV at 50 MHz.

    Fig15.b: CTI vs temperature for different shift time for 0.17 eV at 50 MHz compared

    to Lancaster full simulation.

    We see from figure15, for 0.17 eV, that the case where the fast simulation agree better

    for improved model at tsh1=2/3f and tsh2=1/3f (concept of considering shift time

    under each node is different) with Lancaster full simulation.

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    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    Temperature (K)

    CTI(%)

    ImpAM tsh1=tsh2=1/2f (AM)

    ImpAM tsh1=2/3f tsh2=1/3f

    ImpAM tsh1= 3/4f tsh2=1/4f

    50 MHz0.44 eV1e12/cm3Occ= 1%

    250 300 350 400 450 500 5500

    0.05

    0.1

    0.15

    Temperature (K)

    CTI

    (%)

    ImpAM tsh1=tsh2=1/2f (AM)

    ImpAM tsh1=2/3f tsh2=1/3f

    ImpAM tsh1=3/4f tsh2=1/4f

    Lancs Full Sim

    50 MHz0.44 eV1e12/cm3Occ= 1%

    Fig16.a: CTI vs temperature for different shift time for 0.44 eV at 50 MHz.

    Fig16.b: CTI vs temperature for different shift time for 0.44 eV at 50 MHz, compared

    to Lancaster full simulation.

    We see from figure16, for 0.44 eV, that the case where the fast simulation agree better

    for improved model at tsh1=2/3f and tsh2=1/3f (concept of considering shift time

    under each node is different) with Lancaster full simulation

    0.17eV

    50 MHz 25 MHz 10MHz

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    Occ Amp CTImax

    Peak temperature

    (K)

    Amp CTI

    max

    Peak temperature

    (K)

    Amp CTI max Peak temperature

    (K)

    0.1 % 0.001998 145 0.002993 135 0.004055 125

    1 % 0.001983 150 0.00295 145 0.003958 135

    5 % 0.001812 165 0.002698 155 0.003565 145

    Table1.a: Amplitudte CTI max and peak postion for different Ocuupancy for 0.17 eV

    at different frequency

    0.17eV

    50 MHz 25 MHz 10MHz

    Tjoin Amp CTImax

    Peak temperature

    (K)

    Amp CTI

    max

    Peak temperature

    (K)Amp CTI

    max

    Peak temperature

    (K)

    0.5 0.002027 155 0.003018 145 0.00403 135

    1 0.001983 150 0.00295 145 0.003958 1352 0.001909 150 0.002847 140 0.003818 135

    Table1.b: Amplitudte CTI max and peak postion for different joining time for 0.17 eV

    at different frequency

    0.44eV

    50 MHz 25 MHz 10MHz

    Occ Amp CTImax

    Peak temperature(K)

    Amp CTImax

    Peak temperature(K)

    Amp CTI max Peak temperature(K)

    0.1 % 0.001094 350 0.001863 330 0.00317 310

    1 % 0.001068 370 0.00181 350 0.003043 330

    5 % 0.009057 400 0.001532 380 0.002538 360

    Table2.a: Amplitudte CTI max and peak postion for different Ocuupancy for 0.44 eV

    at different frequency

    0.44eV

    50 MHz 25 MHz 10MHz

    Tjoin Amp CTI

    max

    Peak position

    (K)

    Amp CTI

    max

    Peak position

    (K)

    Amp CTI

    max

    Peak position

    (K)

    0.5 0.001135 380 0.001917 360 0.003216 340

    1 0.001108 370 0.001872 360 0.003143 340

    2 0.001068 370 0.00181 350 0.003043 330

    Table2.b: Amplitudte CTI max and peak postion for different joining time for 0.44 eV

    at different frequency

    4) Conclusions

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    CTI decrease with increasing frequency.

    Occupancy increases CTI decreases in the amplitude.

    Occupancy decreases the width of the curve increases and peak become flat.

    Assumption of the joining time (Uncertainty).

    As tjoin increases the CTI reduced and shifted down starting from the peak

    postion,for both traps.

    For 0.17 eV ImpAM agree well for tjoin=tsh.

    For 0.44 eV ImpAM agree well for tjoin=2tsh.

    Some of the charge trapped will also join their parent packet (they must be

    included in calculation of CTI). Because of the uncertainty we will assume

    that the time during which charge can join the parent packet is Tjoin .

    The Tjoin parameter affect the CTI curves for both traps after the peak

    position.