byc20x-600 rectifier diode, hyperfast - ween semibyc20x-600_3 ween semiconductors byc20x-600...

1. Product profile

1.1 General descriptionHyperfast, epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

BYC20X-600Rectifier diode , hyperfastRev. 03 — 29 August 2018 Product data sheet

n Extremely fast switching n Low thermal resistancen Low reverse recovery current n Isolated packagen Reduces switching loss in associated

MOSFET

n Half-bridge or full-bridge switched-modepower supplies

n Continuous Current Mode (CCM) PowerFactor Correction (PFC)

n Half-bridge lighting ballasts

n VRRM ≤ 600 V n IF(AV) ≤ 20 An VF = 1.54 V (typ) n trr = 19 ns (typ)

Table 1. Pinning

Pin Description Simplified outline Symbol

1 cathode (k)

SOD113 (2-lead TO-220F)

2 anode (a)

mb mounting base; isolated

21

mb a001aaa020

k

WeEn Semiconductors BYC20X-600Rectifier diode, hyperfast

3. Ordering information

4. Limiting v alues

Table 2. Ordering information

Type n umber Package

Name Description Version

BYC20X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole;2-lead TO-220 ‘full pack’

SOD113

Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse voltage - 600 V

VRWM crest working reverse voltage - 600 V

VR reverse voltage square waveform; δ = 1.0; Th ≤ 100 °C - 500 V

IF(AV) average forward current square waveform; δ = 0.5; Th ≤ 25 °C - 20 A

IFRM repetitive peak forward current square waveform; δ = 0.5; Th ≤ 25 °C;tp = 25 µs

- 40 A

IFSM non-repetitive peak forwardcurrent

t = 10 ms; sinusoidal waveform - 250 A

t = 8.3 ms; sinusoidal waveform - 274 A

Tstg storage temperature −40 +150 °C

Tj junction temperature - 150 °C

BYC20X-600_3

Product data sheet 29 August 2018 2 of 9All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved


5. Thermal c haracteristics

6. Isolation c haracteristics

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-h) thermal resistance from junction to heatsink with heatsink compound;see Figure 1

- - 2.6 K/W

Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W

Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width

001aah191

1

10−1

10Zth(j-h)(K/W)

10−3

10−2

tp (s)10−6 10110−110−5 10−3 10−210−4

tp

tp

T

P

t

Tδ =

Table 5. Isolation limiting values and characteristicsTh = 25 °C unless otherwise specified.


Visol(RMS) RMS isolation voltage from all terminals to external heatsink;f = 50 Hz to 60 Hz; sinusoidal waveform;relative humidity ≤ 65 %; clean and dust free

- - 2500 V

Cisol isolation capacitance from pin 1 (cathode) to external heatsink;f = 1 MHz

- 10 - pF

BYC20X-600_3



7. Characteristics

Table 6. CharacteristicsTj = 25 °C unless otherwise specified.


Static c haracteristics

VF forward voltage IF = 20 A; Tj = 150 °C; see Figure 2 - 1.54 1.97 V

IF = 40 A; Tj = 150 °C; see Figure 2 - 1.95 2.34 V

IF = 20 A; see Figure 2 - 1.89 2.9 V

IR reverse current VR = 600 V - 16 200 µA

VR = 500 V; Tj = 100 °C - 1.6 3.0 mA

Dynamic characteristics

trr reverse recovery time IF = 1 A to VR = 30 V; dIF/dt = 50 A/µs;see Figure 3

- 35 55 ns

IF = 20 A to VR = 400 V; dIF/dt = 500 A/µs;see Figure 3

Tj = 25 °C - 19 - ns

Tj = 100 °C - 32 40 ns

IRM peak reverse recoverycurrent

IF = 20 A to VR = 400 V; Tj = 125 °C;see Figure 3

dIF/dt = 50 A/µs - 3.0 7.5 A

dIF/dt = 500 A/µs - 9.5 12 A

VFR forward recoveryvoltage

IF = 20 A; dIF/dt = 100 A/µs; see Figure 4 - 8 11 V

BYC20X-600_3



(1) Tj = 150 °C; typical values(2) Tj = 150 °C; maximum values(3) Tj = 25 °C; maximum values

Fig 2. Forwar d current as a function of f orward voltage

003aac088

0

10

20

30

40

50

0 1 2 3 4VF (V)

IF (A)

(1) (2) (3)

Fig 3. Reverse recovery definitions ; ramp recovery Fig 4. Forward recovery definitions

001aab911

trr

time

100 %

10 %

IFdlFdt

IR IRM

Qr

001aab912

time

time

VFR

VF

IF

VF

BYC20X-600_3



IF(AV) = IF(RMS) × √δ a = form factor = IF(RMS) / IF(AV)

Fig 5. Forward po wer dissipation as a function ofaverage forward current; square waveform;maximum values

Fig 6. Forward power dissipation as a function ofaverage forward current; sinusoidal waveform;maximum values

003aac090

0

10

20

30

40

50

60

70

0 10 20 30IF(AV) (A)

Ptot (W) δ = 1

0.5

0.2

0.1

003aac089

0

10

20

30

40

50

0 5 10 15 20IF(AV) (A)

Ptot(W)

a = 1.57

1.9

2.2

2.8

4.0

BYC20X-600_3



8. Package outline

SOD113Plastic single-ended package; isolated heatsink mounted;1 mounting hole; 2-lead TO-220 'full pack'

ReferencesOutlineversion

Europeanprojection Issue dateIEC JEDEC JEITA

SOD113 2-lead TO-220F

sod113_po

07-06-0815-08-28

Unit

mmmaxnommin

4.6 2.9 1.1 0.7 15.8 10.319.0

3.2 2.6

A

Dimensions (mm are the original dimensions)

Notes1. Terminals are uncontrolled within zone L1.2. z is depth of T.3. Dot lines area designs may vary.4. Eject pin mark is for reference only.

A1 b

0.9

b1 c D E

2.55 0.4 0.8

T(4) w z(2)e

5.08

HEmax j

(3) k(3) L L1(1)L2

max m

6.50.5

P Q

2.61.7 13.50.4 2.84.0 2.5 0.9 0.4 15.2 9.7 3.0 2.30.7 6.3

2.7 14.40.6 3.3

q

w

0 5 10 mm

scale

A

A1

c

Q

k(3)

j(3)

m

z(2)

e

1 2

b

E

P

b1

q

D

T(4)

HE

L

L1(1)

L2

BYC20X-600_3



BYC20X-600_3 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved

Product data sheet 18 July 2018 8 / 9

9. Legal information

Data sheet status

Documentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

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[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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BYC20X-600_3 All information provided in this document is subject to legal disclaimers.

Product data sheet 18 July 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

9 / 9

Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.

TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

1. Product profile1.1 General description1.2 Features1.3 Applications1.4 Quick reference data

2. Pinning information3. Ordering information4. Limiting values5. Thermal characteristics6. Isolation characteristics7. Characteristics8. Package outline9. Legal information