bcd technology and cost comparison 2020 - system plus … · 2020. 1. 15. · bcd or...

©2020 by System Plus Consulting | SP20485 - BCD Technology & Cost Comparison 2020 1SP20485

22 Bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr

BCD Technology and Cost Comparison 2020

SP20485 – IC report by Sylvain HallereauJanuary 2020 – Sample

In-depth comparative study of 31 Bipolar-CMOS-DMOS technologies with a focus on Silicon-on-Insulator high voltage devices from the 15 major leading manufacturers.

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT


Table of ContentsOverview / Introduction 4

o Executive Summary

Technologies Evolution 10

o Transistors

Gate Oxides

LDMOS and VDMOS

Summary

o Insulation

LOCOS and STI

Deep trench isolation

Substrate SOI

Summary

o Metal Layer Process

Aluminum and Tungsten Plug

Copper Metal layer

Thick metal layer

Summary

o Passives

Capacitor in polysilicon

Resistor in polysilicon

Metal Insulator Metal Capacitor

Thin Film resistors

Inductors

Summary

o Shrink

o High Voltage

Foundry Technologies 41

o Infineon

Roadmap

SPT9 process

Transistors, Insulation, Metal Layer, Passives

Synthese

SMART6 process

Infineon’s Thin-Film SOI-technology

o STMicroelectronics: BCD6s, SOI-BCD6s, BCD8, BCD9, VIPower M0-3, VIPower

M0-5, VIPower M0-7

o Elmos: BCD 0.8µm

o Bosch: BCD6, BCD8

o NXP: A-BCD3, A-BCD9

o IXYS: BCDMOS on SOI High Voltage

o Freescale: SMARTMOS8, SMARTMOS10

o ON Semicondcutor

o Texas Instruments: LBC5, LBC5-SOI, LBC8, LBC9

o Linear Technology: BCD 0.7µm

o Analog devices: BCD 0.5µm, BCD 0.18µm

o Maxim – TowerJazz: BCD 0.4µm

o Denso: SOI-BCD 0.8µm, SOI-BCD 0.5µm

o Renesas: BCD0.15µm

o Toyota: SOI-BCD 0.5µm

o Toshiba: SOI High Voltage

o Comparisons

Feedback

Company services 366

In red the technologies high voltage added in this report.In black, the new technologies added in the 2020 report.


Overview / Introductiono Executive Summaryo Glossaryo Reverse Costing

Methodology

Evolution of BCD Technologies

Foundry technologies Review

Comparison

Feedbacks

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About System Plus

Executive Summary

• This report presents an in-depth analysis of the latest innovations in Bipolar-CMOS-DMOS (BCD) devices, . It showsshowing thedifferences between 31 selected devices from Infineon, STMicroelectronics, Elmos, Bosch, NXP, IXYS, Freescale, Texas Instruments,Linear Technology, Analog Devices, Maxim/TowerJazz, Denso, Renesas, Toyota and Toshiba. The report covers all the major playerson the market and their new technologies.

• Thise 2020 version adds eight new technologies from seven existing manufacturers, and another three new manufacturers, IXYS,Maxim and Toshiba. It focuses on high voltage technologies, over 200V and up to 600V, with the Silicon-on-Insulator (SOI)-basedsolutions from Infineon at 600V, Ixys at 200V and Toshiba at 500V. These three manufacturers have adopted very differentsolutions, which we analyze in this report. The report also studies 10 SOI technologies. The technology nodes range from 2.5µm upto 90nm and . Tthe components range from monolithic piloted power transistors to microcontrollers with high voltage analoginputs and outputs.

• For each analyzed device, the technology report details the manufacturing process and materials used, the component design andtechnical choices. Moreover it The cost report provides an estimation of the cost structure of the wafers using the varioustechnologies, highlighting the influence of the technological innovations.

• This report provides a unique opportunity to understand the technology evolutions and the manufacturing cost of the major BCDmanufacturers, to give the basics for an optimal choice of components during design and integration.

• In the report, we analyse and compare products from the 15 main manufacturers. The reports is focused on technology evolutionwith a description of the cost impact of these innovations. It includes technical and cost comparisons of main parameters, thetransistors, the metal layers, the insulation and the passive devices.



Methodology



Comparison

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Technologies Summary by Founder

Infineon: SMART6

SPT9

Infineon’s SOI-technology

STMicroelectronics:

BCD6s

SOI-BCD6s

BCD8

BCD9

VIPower M0-3

VIPower M0-5

VIPower M0-7

Elmos: BCD 0.8µm

Bosch: BCD6

BCD8

NXP: A-BCD3 SOI

A-BCD9 SOI

IXYS: SOI High Voltage

Freescale (now NXP):

SMARTMOS8

SMARTMOS10W

Texas Instruments:

LBC5

LBC5-SOI

LBC8

LBC9

Linear Technology:

BCD 0.7µm

Analog Devices:

BCD 0.5µm

BCD 0.18µm

Maxim / TowerJazz (Foundry):

BCD 0.5µm

Denso: SOI-BCD 0.8µm,

SOI-BCD 0.5µm

Renesas: BCD 0.15µm

Toyota: SOI-BCD 0.5µm

Toshiba: SOI High Voltage

New analyses respect to the report « SP17335 - BCD technology and Cost review 2017 » published



Methodology



Comparison

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Technologies Summary – 2020 News

New technology in the Review 2020:

o Infineon: BCD SOI-technology

o STMicroelectronics: BCD9 (0.13µm)

o IXYS: SOI High Voltage

o Texas Instruments: LBC5-SOI (0.5µm)

o Texas Instruments: LBC9 ( 0.13µm)

o Analog Devices: BCD 0.5µm

o TowerJazz (Foundry): BCD 0.5µm


SOI and High voltage technologies:

o Infineon: BCD SOI-technology

o IXYS: SOI High Voltage


In red the technologies high voltage added in this report.In black, the new technologies added in the 2020 report.


Overview / Introduction

Evolution of BCD Technologieso Transistorso Insulationo Metal Layerso Passiveo High Voltage


Comparison

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Technologies Overview

BCD or Bipolar-CMOS-DMOS has been imagined and developed to simplify the control of the power devices by proposing a monolithic solution to integrate the gate driving circuit and current and temperature measurements to protect the power component in a samesilicon circuit. Today BCD technologies allow to integrate a microcontroller with logic, memory, analogic and power functions on the same circuit. BCD combines the strengths of three different transistors onto a single chip: Bipolar for precise analog functions, CMOS (Complementary Metal Oxide Semiconductor) for digital design and DMOS (Double Diffused Metal Oxide Semiconductor) for power and high-voltage.

This association of technologies brings many advantages: • reduced electromagnetic interferences• smaller chip area • smaller PCB footprint and bill of material

Used in a wide range of applications the BCD is available for different applications:• high voltage: power actuator• high density: added high voltage to a microcontroller• high precision analog: analog data acquisition • low leakage IC for wireless: power management

The first BCD circuits were made with a few CMOS and bipolar transistors added to the LDMOS high voltage to drive and measure. Since then the technology made a huge improvement by re-inventing technology initially developed for advanced CMOS like SOI substrate, dual oxides, copper metal layer or for the MOSFET and IGBT discrete transistors like the trenches.





Comparison

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Transistor - Gate Oxides

BCD 0.18µm die from Bosch

BCD 0.7µm die from Linear Technology





Comparison

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Transistor - Vertical DMOS

Infineon SPT4 technology, trench MOSFET– cross-section SEM view




Foundry technologies Reviewo Infineon: SPT9, SMART6, SOIo STMicroelectronics: BCD6s,

SOI-BCD6s, BCD8s, BCD9, VIPower M0-3, 5 and 7

o Elmos: BCD0.8µmo Bosch: BCD6, BCD8o NXP: A-BCD3, A-BCD9o IXYS: SOI high Voltageo Freescale: SMARTMOS8,

SMARTMOS10Wo Texas Instruments: LBC5,

LBC5-SOI, LBC8, LBC9o Linear technology: BCD

0.7µmo Analog Devices: BCD 0.5µm,

BCD 0.18µmo Maxim-TowerJazz: BCD

0.4µmo Denso: SOI-BCD0.8µm, SOI-

BCD 0.5µmo Renesas: BCD 0.15µmo Toyota: SOI-BCD 0.5µmo Toshiba: SOI high Voltage

ComparisonFeedbacksRelated ReportsAbout System Plus

Infineon – SPT9 Characteristics – Die Example

IC Die Overview - Optical View Die Delayering- Removal of Metal Layers

• Infineon technology die manufactured with SPT9 technology.• Die dimension: 10.62mm² • 3-Phase Bridge Driver IC used in Automotive applications.














Infineon – SPT9 Transistors

100 nm 115 nm

LDMOS Transistors (SEM view).High density CMOS - top view














Infineon – SPT9 Memory

6T-SRAM Cell - SEM View

ROM Cell - SEM View

Flash Cell - SEM View














Infineon – SPT9 Wafer Cost Hypothesis














Infineon – Thin-Film SOI Transistors














Infineon – Thin-Film SOI Wafer Cost Breakdown





Comparison

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Comparison Table – 10mm² Die Price





Comparison

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Wafer Cost by Technology Node





Comparison

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REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING

Power & IC• Mobileye EyeQ4 Vision Processor Family• Texas Instruments’ LMG5200 GaNPower Stage• Texas Instruments LMG3410 600V GaN FET Power Stage

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• Power Management IC: Technology, Industry and Trends 2019

https://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg3410-600v-gan-fet-power-stage/


https://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/


https://www.systemplus.fr/reverse-costing-reports/mobileye-eyeq4-vision-processor-family/



https://www.i-micronews.com/products/power-management-technology-industry-and-trends-2019/






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