bar42film, bar43film, bar43afilm, 43cfilm, bar43sfilm st

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 ® 1/5 Table 1: Main Product Characteristics I F(AV) 0.1 A V RRM 30 V T j 150°C V F (max) 0.33 and 0.40 V BAR42FILM BAR43FILM SMALL SIGNAL SCHOTTKY DIODE REV. 3 Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 30 V I F(AV) Continuous forward current 0.1 A I FSM Surge non repetitive forward current t p  = 10ms sinusoidal 0.75 A P tot Power dissipation (note 1) T amb  = 25°C 250 mW T stg Maximum storage temperature range -65 to + 150 °C T  j Maximum operating junction temperature * 150 °C T L Maximum temperature for soldering during 10s 260 °C Note 1: for double diodes, P tot  is the total dissipation of both diodes. * : thermal runaway condition for a diode on its own heatsink dPtot  dT j --------------- 1 Rth j a  ( ) -------------------------- > K A K A Nc A2 A1 K K A1 A2 A2 A1 K2 K1 A1 K2 A2 K1 K1 A K2 K2 A K1 BAR42FILM BAR43FILM BAR43CFILM BAR43AFILM BAR43ASFILM SOT23-3L April 2005 FEATURES AND BENEFITS Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount device DESCRIPTION Genral purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. Table 2: Order Codes Part Number Marking BAR42FILM D94 BAR43FILM D95 BAR43AFILM DB1 BAR43CFILM DB2 BAR43SFILM DA5

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  • 1/5

    Table 1: Main Product CharacteristicsIF(AV) 0.1 AVRRM 30 V

    Tj 150CVF(max) 0.33 and 0.40 V

    BAR42FILMBAR43FILM

    SMALL SIGNAL SCHOTTKY DIODE

    REV. 3

    Table 3: Absolute Ratings (limiting values)Symbol Parameter Value Unit

    VRRM Repetitive peak reverse voltage 30 V

    IF(AV) Continuous forward current 0.1 A

    IFSM Surge non repetitive forward current tp = 10ms sinusoidal 0.75 A

    Ptot Power dissipation (note 1) Tamb = 25C 250 mWTstg Maximum storage temperature range -65 to + 150 C

    Tj Maximum operating junction temperature * 150 CTL Maximum temperature for soldering during 10s 260 C

    Note 1: for double diodes, Ptot is the total dissipation of both diodes.

    * : thermal runaway condition for a diode on its own heatsinkdPtotdTj---------------1

    Rth j a( )-------------------------->

    K

    AK

    A

    Nc

    A2

    A1

    KK

    A1

    A2

    A2

    A1K2

    K1

    A1K2

    A2

    K1

    K1

    A

    K2K2

    AK1

    BAR42FILMBAR43FILM

    BAR43CFILM

    BAR43AFILM

    BAR43ASFILM

    SOT23-3L

    April 2005

    FEATURES AND BENEFITS Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount device

    DESCRIPTIONGenral purpose metal to silicon diodes featuringvery low turn-on voltage and fast switching.

    Table 2: Order CodesPart Number MarkingBAR42FILM D94BAR43FILM D95

    BAR43AFILM DB1BAR43CFILM DB2BAR43SFILM DA5

  • BAR42FILM / BAR43FILM

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    Table 4: Thermal Resistance

    Table 5: Static Electrical Characteristics

    Pulse test: * tp = 5 ms, < 2%** tp = 380 s, < 2%

    Table 6: Dynamic Characteristics (Tj = 25C)

    Symbol Parameter Value UnitRth(j-a) Junction to ambient (*) 500 C/W

    (*) Mounted on epoxy board with recommended pad layout.

    Symbol Parameter Tests conditions Min. Typ Max. UnitVBR Breakdown voltage Tj = 25C IR = 100A 30 V

    IR * Reverse leakage currentTj = 25C VR = VRRM

    500 nATj = 100C 100 A

    VF ** Forward voltage drop Tj = 25C

    BAR42IF = 10mA 0.35 0.40

    VIF = 50mA 0.50 0.65

    BAR43IF = 2mA 0.26 0.33IF = 15mA 0.45

    ALL IF = 100mA 1

    Symbol Parameter Tests conditions Min. Typ. Max. UnitC Junction capacitance Tj = 25C VR = 1V F = 1 MHz 7 pF

    trr Reverse recovery timeIF = 10 mA IR = 10 mATj = 25C Irr = 1 mA RL = 100

    5 ns

    Detection efficiencyCL = 300 pF F = 45 MHzTj = 25C Vi = 2 V RL = 50

    80 %

    Figure 1: Forward voltage drop versus forwardcurrent (typical values, low level)

    Figure 2: Forward voltage drop versus forwardcurrent (typical values, high level)

    0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.500.00E+0

    2.00E-3

    4.00E-3

    6.00E-3

    8.00E-3

    1.00E-2

    1.20E-2

    1.40E-2

    1.60E-2

    1.80E-2

    2.00E-2I (A)FM

    V (V)FM

    T =25CjT =50Cj

    T =100Cj

    0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.11E-3

    1E-2

    1E-1

    5E-1I (A)FM

    V (V)FM

    T =25CjT =50Cj

    T =100Cj

  • BAR42FILM / BAR43FILM

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    Figure 3: Reverse leakage current versusreverse voltage applied (typical values)

    Figure 4: Reverse leakage current versusjunction temperature

    Figure 5: Junction capacitance versus reversevoltage applied (typical values)

    Figure 6: Relative variation of thermalimpedance junction to ambient versus pulseduration (epoxy FR4 with recommended padlayout, e(Cu)=35m)

    Figure 7: Thermal resistance junction toambient versus copper surface under eachlead (Epoxy printed circuit board FR4, copperthickness: 35m)

    0 5 10 15 20 25 301E-2

    1E-1

    1E+0

    1E+1

    1E+2I (A)R

    V (V)R

    T =100Cj

    T =50Cj

    T =25Cj

    0 25 50 75 100 125 1501E-2

    1E-1

    1E+0

    1E+1

    1E+2

    1E+3

    1E+4I (A)R

    V (V)R

    V =30VR

    1 2 5 10 20 301

    2

    5

    10C(pF)

    V (V)R

    F=1MHzT =25Cj

    1E-3 1E-2 1E-1 1E+0 1E+1 1E+20.01

    0.10

    1.00Z /Rth(j-a) th(j-a)

    T

    =tp/T tpt (s)p

    = 0.5

    = 0.2

    = 0.1

    Single pulse

    0 5 10 15 20 25 30 35 40 45 50150

    200

    250

    300

    350R (C/W)th(j-a)

    S(CU)(mm)

    P=0.25W

  • BAR42FILM / BAR43FILM

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    Figure 8: SOT23-3L Package Mechanical Data

    Figure 9: Foot Print Dimensions (in millimeters)

    A1

    A

    LH

    B

    E

    D

    e

    e1

    S

    c

    0.95 0.61

    1.26

    3.250.73

    Table 7: Ordering Information

    Epoxy meets UL94, V0

    Ordering type Marking Package Weight Base qty Delivery modeBAR42FILM D94

    SOT23-3L 0.01 g 3000 Tape & reelBAR43FILM D95

    BAR43AFILM DB1BAR43CFILM DB2BAR43SFILM DA5

    Table 8: Revision HistoryDate Revision Description of Changes

    Aug-2001 2B Last update.16-Apr-2005 3 Layout update. No content change.

    REF.DIMENSIONS

    Millimeters InchesMin. Max. Min. Max.

    A 0.89 1.4 0.035 0.055A1 0 0.1 0 0.004B 0.3 0.51 0.012 0.02c 0.085 0.18 0.003 0.007D 2.75 3.04 0.108 0.12e 0.85 1.05 0.033 0.041e1 1.7 2.1 0.067 0.083E 1.2 1.6 0.047 0.063H 2.1 2.75 0.083 0.108L 0.6 typ. 0.024 typ.S 0.35 0.65 0.014 0.026

  • BAR42FILM / BAR43FILM

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    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

    The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners

    2005 STMicroelectronics - All rights reserved

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