antireflex coatings antireflex coating arc @ inesc: 150, 400Å tiwn 2 resist was exposed both to the...
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Antireflex coatings
Antireflex coating ARC @ INESC: 150, 400Å TiWN2
Resist was exposed both to the light source and to reflected beams from resist/sample interfaces
Impact of standing waves on the developed resist
Problem solved after coating the film with an anti-reflex material (e.g. oxinitride) before exposure
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Multilevel exposure
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Wafer processing - Vetching / lift-off process
NEXT WEEK
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Next generation lithography
- Air environment- Complex mask fabrication ($4k-$12k)- Resists have low sensivity- High cost X-ray sources
- vacuum environment- direct write systems (software masks)-slow writting over large areas- very high system cost
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X-ray lithography
Advantages:•No vacuum environment required (no charged particles involved) •Very small wavelength (< 14Å) - can produce 0.15 µm features •High reproducibility (exposure independent of substrate type, surface reflections)
Disadvantages:•No optics involved – limited to 1:1 shadow printing (no image reduction is possible) •Very expensive and complex mask fabrication (~10 days, cost is $4k-$12k)•Low sensivity of the resists•High cost of sufficiently bright X-ray sources
(e.g. Synchrotron)
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E-beam lithography
Leica EBL-100, shown here with a 100 kV LaB6 electron source and a conventional SEM stage. The system is also available with a TFE source and laser-controlled stage. (Courtesy of Leica Lithography Systems Ltd.) COSTS ~$1M, for 2 inch areas maximum.
Advantages:• vacuum environment required (charged particles involved) • Direct write system (software mask)• the smaller the beam sizes, the better the resolution• can produce down to 0.01m features• low defect densities
•At 30 keV, electrons travel >14 m deep into a resist layer
Disadvantages:• Very expensive system• Slow writting
10-100 keV electron beam
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E-beam lithography comercial systems
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Ion Beam lithographyAdvantages:
•Computer-controlled beam •No mask is needed •Can produce sub-1 µm features •Resists are more sensitive than electron beam resists •Diffraction effects are minimized •Less backscattering occurs •Higher resolution •Ion beam can detect surface features for very accurate registration
Disadvantages:•Reliable ion sources needed •Swelling occurs when developing negative ion beam resists, limiting resolution •Expensive as compared to light lithography systems •Slower as compared to light lithography systems •Tri-level processing required
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Paul Scherrer Institute
Electrom Beam Lithography System
Co-axial Ion Source
Multi-Cusp Ion Source
http://lmn.web.psi.ch
Ion Beam Source
Ion Optics
Vacuum Chamber
Ion energies : 20 eV - 200 KeV
Beam Current : up to 500 A/cm2
Ion Specimens : H, He, Ar, Hf, Ga, Si, Au, Co, Pr, P+, BF2+, etc…
ΔE ~ 6 eV (75KeV)
ΔE ~ 0.5 eV (75KeV)
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Focused Ion Beam Lithography (FIBS)
Ion Beam Cannon
Scanning Beam Exposure System
Feature size is limited by spot size
Can take up to 6 orders of magnitude longer than mask projection technology, depending on sample size ⇨ Not suitable for Industrial Purposes
Allows the exposure of very complex patterns in only one lithography step
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Bibliography
- VLSI Technology, S.M.Sze, McGraw-Hill International Editions
- Nanoelectronics and information technology – Advanced Electronic Materials and Novel Devices, Rainer Waser (Ed.), Wiley-VCH (2003)
- Microsystems: mechanical, chemical, optical, S.D.Sentura, M.A.Schmidt and J.Harrison, MIT press
- Fundamentals of Microfabrication – The science of miniaturization, Marc J.Madou, CRC press (2002)
- Spin Electronics - Chap.16, M.Ziese and M.J.Thornton (Ed.), Lecture Notes in Physics, Springer-Verlag
http://www.cnf.cornell.edu/spiebook/toc.htm
http://semiconductorglossary.com/default.asp?searchterm=lithography