tooling to measure euv resist outgassing and witness plate...
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IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Tooling to measure EUV resist outgassing and
witness plate contamination
Rupert C. PereraEUV Technology
Martinez, CAwww.EUVL.com
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
How to contaminate optics
• Deposit contaminant– Hydrocarbons
– High partial pressure• Bad vacuum
• Expose to radiation– Photons
– Electrons
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Contaminated ML Mirror
• Enrgetiq source– Damaged Zr filter– Bad vacuum (10-3
mbar)– Carbon tape
• Directly illuminated the ML mirror for several hours– Accidentally
illuminated the carbon tape
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Reflectivity measurements after cleaning,ALS July 1, 2007: Compared with before
contaminating the optics
1 2 .5 1 3 .0 1 3 .5 1 4 .0 1 4 .50 .0
0 .1
0 .2
0 .3
0 .4
0 .5
0 .6
0 .7to ta l = 7 .5 4 3 n mG = 0 .3 5N = 4 0d = 6 .9 4 n ms = 0 .5 5 n m
C X 0 7 0 3 1 6 A G O 2 3 5 9R
efle
ctan
ce
W a v e le n g th (n m )
m u l0 1 2 0 4 0 m u l0 1 3 5 0 5
DR = 1.9 %
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
EUV Resist and Outgassing Prototype tool deliverd to IMEC in
October 2008: ADT guidelines
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Schematic Diagram of EUV RER 1314 for ADT guidelines
Power density at the resist - 5 mW/cm2.
The power density at the witness plate - 80 mW/cm2.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Dose Snake
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Example of WS test result using in-band EUV photon excitation as measured with ellipsometry
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Overview of WS contamination test results obtained in the last half year at IMEC as part of resist outgassing qualification towards ASML ADT
Courtesy of Pollentier et al.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Contamination Vs. Total outgassing (All species, i.e. amu 1-200)
Contamination is not correlating with total outgassing
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Contamination Vs. “PAG cationout-gassing”(amu 180-190)
PAG cation fragment plays an important role in the contamination for many photoresists from multiple suppliers.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
POLY(OLEFIN SULFONE)S - A MATERIALS PLATFORM FOR STUDYING RESIST DERIVED
CONTAMINATION
Material Depolymerisation
S S S
O
O
O
O
O
OR
R
EUV
S
S
S
O
O O
O
O
O
R
R
= controlled outgassing of SO2 and !!!R
Poly-Olefin sulfoneS
O
O
S
O
O
SS
O
O
O
O
SS
O
O
O
O
Br
SS
O
O
O
O
Cl
S
O
O
S
O
O
SS
O
O
O
O
Br
S
O
O
S
O
O
S
O
O
S
O
O
SS
O
O
O
O
SS
O
OO
O
O
Si
SS
O
OO
O
OSi
(1)(2)
(4)
(9)
(10)
(3)
Poster RE-2(K. Lawrie)
Aryl group materials have one order of magnitude higher carbonization rate than alkyl containing groups of similar MW
(1) (2)
(4)
(7)(6)
(3) (5)
(8)
(9)
(10)
(11)
(11)
(7) (8)
(6)(5)
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
OUTGASSING AND WS CONTAMINATION TESTING ON VARIOUS RESIST MATERIALS
IVAN POLLENTIER
13
anion
Polymer with (protection) groups
Photo Acid Generator
(PAG)
Quencher
anion
anio
n
PAG blended EUV resistPAG-bound EUV resist
Poster RE-13
For chemically amplified resists the PAG-cation is found key in outgassing and contamination, but also other species play a role
WS contamination thickness is dependent on PAG MW, chemistry, loading, ...
Similar WS contamination thickness found for cation and anion bound PAG (other species play a role too !)
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
PAG TYPE (BLENDED)
IVAN POLLENTIER
14
Polymer diffusion limited
Cation size limited
S+
anionPAG
Several PAG cations are tested towards WS contamination
Both small PAG cations as very heavy PAG cationsgive lower WS contamination, however it is expected that for S-containing cations the high-MW will result in less non-cleanable contamination
Poster RE-13
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Highlights• Operating for about 18 months• Use EUV in-band excitation.
• Very good uptime (reliable)• Extremely easy to use• New results
• Not designed for NXE platform.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
RER-300-PEX
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Design Philosophy
• Based on our previous model of resist outgassing and contamination measuring tool delivered to IMEC in 2008 (Model No. EUV-RER1314; Patent Pending)
• Based on two ASML (confidential) guidelines for NXE scanners. – Photon based
– E-gun based
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Sources
• Model No. RER300-PEX is equipped with– In-band EUV photon excitation source
– E-beam exposure capabilities to exposes resist coated wafers.
System is designed in such a way that it can be ordered with one mode of operation
and field upgraded to add the other option.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
LOAD LOCKVACUUM ROBOT
ANALYSIS CHAMBER
ENERGETIQ EQ-10 HP EUV SOURCE
FILTER SHIELD Zr FILTER PROTECTION SYSTEM
RGA
ELECTRON GUNS
EUV BEAM PATH
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
EUV Excitation
• Uses Energetiq EQ-10-HP as the EUV source • Utilize a novel optical system to provide in-band
spectrum of illumination of the resist-coated wafers. • A minimum intensity of 35 mW/cm² incident on the wafer.
Based on the measurements performed at IMEC using the prototype resist outgassing system developed by EUV Technology about 2 years ago and incorporating system upgrades embodying recent advances in the industry, a typical EUV resist exposure measurement can be performed in about 1 hour.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Electron excitation• An EFG-7F electron gun manufactured by Kimball
Physics Inc., is used to expose the resist-coated wafer. – The wafer e-gun illuminates a spot approximately 20 mm in
diameter on the wafer the resist wafer at 90 degrees to the wafer.
• The stability of the beam currents from this e-gun is better than ±5% over the time of two hours. – In addition, only the electrons from the wafer e-gun are allowed
to reach the wafer.
This the same e-gun described in the paper presented by I. Pollentier, A-M. Goethals, R. Gronheid, J. Steinhoff, and J. Van Dijk at the SPIE (February 2010).
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Witness Plate: 1" Ru coated Si or
GaAs wafer or a ML coated (Ru cap) wafer
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
For salient features and detail description of RER-300-PEX,
please visit our poster.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Highlights
• EUV Technology can provide customers with – Calibrated multilayer-coated witness samples– Collaborate with them to cross calibrate their witness
sample contamination results, obtained by ellipsometry, to reflectivity losses using our in-house EUV Reflectometer.
• Construct our tools to meet the NFPA-79 guidelines.
• We have experience in constructing tools – SEMI-S2/S8, SEMI-F47 standards, CE certification et– SECS protocol
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Advantages of using 13.5 nm photons over electrons
• The EUVL stepper uses photons• True dose to clear exposure.
• Non destructive.– Only detect photo-induced decomposition.
• Represent bulk properties.– Not sensitive to surface contamination.
IEUVI Resist TWG, Kobe Japan October 17, 2010EUV Technology Business Sensitive Information
Principal team members
Rupert C. Perera• Ph.D. from University of Hawaii, Honolulu in
1978, and MBA (Management Science) in 2000.• Ph. D. Thesis: Molecular spectroscopy in ultra
soft x-ray (2 -15 nm) region.– Prof. Burton Henke: Henke tube; World’s First
selective EUV sourceJames Underwood• Ph. D. in Physics from the University of
Leicester, England• A pioneer in x-ray and EUV optics
– In 1983 co-founded the Center for X-ray Optics at LBNL, pioneered the EUVL program.