www.tyndall.ie innovation in ireland – the researcher perspective simon.elliott@tyndall.ie...

www.tyndall.ie

Innovation in Ireland – the researcher

perspective

simon.elliott@tyndall.ie

Destination Europe, San Francisco, 2012Ireland Workshop

Simon D. Elliott

www.tyndall.ie

Introducing Tyndall National Institute

John Tyndall,1820-1893

Ireland’s centre of excellence in

research into Information and

Communications Technologies:

• named after the Irish-born scientist;

• located in Cork, part of University

College Cork;

www.tyndall.ie

Introducing Tyndall National Institute

Ireland’s centre of excellence in

research into Information and

Communications Technologies:

• named after the Irish-born scientist;

• located in Cork, part of University

College Cork;

• strategic value to Ireland – providing

facilities for Universities and

technology transfer to industry;

• strong record in postgraduate

education.

www.tyndall.ie

Introducing Tyndall National Institute

In numbers:

• >400 staff of whom ~100 are PhD

students;

• 28 industry researchers-in-residence;

• 200 peer-reviewed publications

(2010);

• 8 patent applications, 9 patent

licences;

• 9 start-ups based on Tyndall

technology;

• 17,000 sq ft clean room space.

www.tyndall.ie

Nanofabrication: ultra-thin films

R. Feynman, “There’s plenty of room at the bottom”

(1959):

“What could we do with layered structures with just

the right layers? What would the properties of

materials be if we could really arrange the atoms the

way we want them? … When we have some control of

the arrangement of things on a small scale we will get

an enormously greater range of possible properties

that substances can have, and of different things that

we can do.”

Atomic layer deposition (ALD) has emerged as the

processing technology of choice for high-quality films in

demanding nanoscale geometries. R. Feynman, 29 Dec 1959, Annual Meeting of the American Physical Society at the California Institute of

Technology; © Engineering and Science, Caltech; see http://www.zyvex.com/nanotech/feynman.html.

www.tyndall.ie

Nanofabrication: ultra-thin films

http://www.youtube.com/watch?v=HUsOMnV65jk

www.tyndall.ie

My recent projects

Topic Industry partners

EU Rare earth oxide thin films SAFC, ASM, NXP, Numonyx

EU Charge trapping layers for flash memory

Numonyx

EU High permittivity films for super-capacitors

Analog Devices, ASM, SAFC, Air Liquide, Infineon etc.

EU Metallic films for X-ray lensing

IE Deposition of organic thin films

Henkel

IE Functional oxides for electronics (FORME)

Intel, Applied Materials, SAFC Hitech etc.

IE Process design for ALD of copper

Intel

www.tyndall.ie

My recent projects

Topic Industry partners

EU Rare earth oxide thin films SAFC, ASM, NXP, Numonyx

EU Charge trapping layers for flash memory

Numonyx

EU High permittivity films for super-capacitors

Analog Devices, ASM, SAFC, Air Liquide, Infineon etc.

EU Metallic films for X-ray lensing

IE Deposition of organic thin films

Henkel

IE Functional oxides for electronics (FORME)

Intel, Applied Materials, SAFC Hitech etc.

IE Process design for ALD of copper

Intel

www.tyndall.ie

Strategic research cluster Functional oxides and related materials for

electronics

–Chemistry

–Deposition

–Devices

www.tyndall.ie

Strategic research cluster Functional oxides and related materials for

electronics

–Chemistry

–Deposition

–Devices

Otway, Gun’ko, ElliottPrecursor synthesisQuantum chemistry

www.tyndall.ie

Strategic research cluster Functional oxides and related materials for

electronics

–Chemistry

–Deposition

–Devices

Pemble, Povey, Hughes, Holmes, Morris, McGlynn, Pelucchi

ALD reactor

X-ray photoelectron spectroscopy

www.tyndall.ie

Strategic research cluster Functional oxides and related materials for

electronics

–Chemistry

–Deposition

–DevicesHurley, Whatmore, Redmond, Quinn, Roy

MOSFET fabrication

Electrical C-V

www.tyndall.ie

Modelling interface structure

Computed structure of HfSiO4/Ge interface computed by first principles DFT, with spontaneous generation of defective 3-coordinate Ge (highlighted as ball);

green=Ge, red=O, blue=Hf, yellow=Si.

high-permittivity insulator (HfSiO4)

high mobility substrate (Ge)

www.tyndall.ie

Modelling deposition onto substrateS. Klejna

OAs

Surface model for oxidised III-V semiconductor

purple=As, red=O

www.tyndall.ie

Modelling deposition onto substrateS. Klejna

Adsorption of Al(CH3)3

Graphical representation of optimised geometries (GGA-PW91, USPP, VASP program).purple=As, red=O, blue=Al, grey=C, white=H

www.tyndall.ie

Modelling deposition onto substrateS. Klejna

Transfer of ligands from Al to As

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Modelling deposition onto substrateS. Klejna

Transfer of ligands from Al to Oand of electrons from C to As

2e

Electron transfer confirmed using Bader population analysis.

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Modelling deposition onto substrateS. Klejna

Proton transfer

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purple=As, red=O, blue=Al, grey=C, white=H

Desorption of volatile species

C2H4

AsMe3

Modelling deposition onto substrateS. Klejna

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Modelling deposition onto substrateS. Klejna

Desorption of volatile species

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Modelling growth over ALD cyclesM. Shirazi

5 cycles of Hf(N(CH3)2)4+H2O ALD, T=500 K, p=0.26 Torr, tpulse=tpurge=0.1 s

red=O, blue=N, large grey=Hf, small grey=C, white=H

www.tyndall.ie

Value to Tyndall of industry collaboration

• Working on real-life, relevant problems specified by

industry;

• Valuable new ideas from interacting with researchers

in top global companies;

• Students obtain insight into industry needs and R&D

culture;

• Potential for research to have high impact;

• Reinforces industrial R&D in Ireland.