thermal analysis and pcb design for gan power transistor

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Background Prototype power inverter - Smaller - Efficient GaN power transistor - High frequency switching - Low on-resistance - Operation in high temperatures Effects of high temperatures - Material wear down - Efficiency

TRANSCRIPT

Thermal Analysis and PCB Design for GaN Power Transistor

Pedro A. Rivera CURENT REU

Final presentation 7/23/2015

University of Tennessee

Background

2

• Prototype power inverter

- Smaller

- Efficient

• GaN power transistor

- High frequency switching

- Low on-resistance

- Operation in high temperatures

• Effects of high temperatures

- Material wear down

- Efficiency

Method

6

Experimental Simulation Theoretical

GaN die

Heat sink

• Obtain data from:

- Resistor

- Heat sink

• FEMM software

- Materials

- Measurements

• Calculate thermal resistance

Results

7

Design #1

0 2 4 6 8 10 12 14 16 18 20280290300310320330340350360370

Comparison of experimental resistor temper-ature for Design #1

ExperimentalSimulation Design #1Theoretical Design #1

Power (W)

Tem

pera

ture

(˚K)

• Experimental results match well simulation and theoretical results

Results

8

0 2 4 6 8 10 12 14 16 18 20300350400450500550600650700750

Comparison of experimental resistor temperature for Design #2

ExperimentalSimulation Design #2Theoretical Design #2

Power (W)

Tem

pera

ture

(˚K)

Design #2

• Not much area under heat source • Higher thermal resistance

Results

9

0 2 4 6 8 10 12 14 16 18 20300350400450500550600650700750

Comparison of experimental resistor temper-ature for Design #3

Experimental Simulation Design #3Theoretical Design #3

Power (W)

Tem

pera

ture

(˚K)

Design #3

• Improves design #2

Conclusion/Future work

10

• The use of thermal vias and heat sink on the bottom was the best design

• The farther away the heat sink from the heat source the worst the cooling will be

• Results can be used for comparison in future designs

• Create new designs to compare

• Use software with three dimensional viewing

Acknowledgements

This work was supported primarily by the ERC Program of the National Science Foundation and DOE under NSF Award Number EEC-1041877.

Other US government and industrial sponsors of CURENT research are also gratefully acknowledged.

11

Questions and Answers

12

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