sm4833nsk.pdf
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N-Channel Enhancement Mode MOSFET
1
SM4833NSK
www.sinopowersemi.com
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Features
Applications
Pin Description
Ordering and Marking Information
N-Channel MOSFET
30V/17A,
RDS(ON)
= 4m(max.) @ VGS
= 10V
RDS(ON)
= 5.6m(max.) @ VGS
= 4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Top View of SOP-8
SM4833NS
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4833NS K :SM4833XXXXX XXXXX - Date Code
Assembly Material
G
S
D D
S S
D D( 5,6,7,8 )
(4)
(1, 2, 3)
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SS
SG
DD
DD
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Absolute Maximum Ratings (TA= 25C Unless Otherwise Noted)
Electrical Characteristics (TA
= 25C Unless Otherwise Noted)
SM4833NSKSymbol Parameter Test Conditions
Min. Typ. Max.Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A 30 - - V
VDS=24V, VGS=0V - - 1IDSS Zero Gate Voltage Drain Current
TJ=85C - - 30A
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=20V, VDS=0V - - 100 nA
VGS=10V, IDS=17A - 3.3 4
RDS(ON)a
Drain-Source On-state Resistance VGS=4.5V, IDS=12A - 4.6 5.6 m
Diode Characteristics
VSDa Diode Forward Voltage ISD=3A, VGS=0V - 0.7 1.1 V
trrb Reverse Recovery Time - 40 - ns
Qrrb Reverse Recovery Charge
ISD=3A, dlSD/dt=100A/s- 37 - nC
Symbol Parameter Rating Unit
VDSS Drain-Source Voltage 30
VGSS Gate-Source Voltage 20V
TA=25C 17ID
a Continuous Drain Current (VGS=10V)
TA=70C 13
IDMa 1.5ms Pulsed Drain Current (VGS=10V) 150
ISa Diode Continuous Forward Current 3
IASb Avalanche Current (Single Pulse) 15
A
EASb Single Pulse Avalanche Energy (L=0.1mH) 28 mJ
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150C
TA=25C 2.5PD
a Maximum Power Dissipation
TA=70C 1.6W
RJAa,c
Thermal Resistance-Junction to Ambient t 10s 50
RJL Thermal Resistance-Junction to Lead Steady State 25C/W
Note a Surface Mounted on 1in2 pad area, t 10sec.
Note b UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25
oC).
Note c Maximum under Steady State conditions is 75 C/W.
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Electrical Characteristics (Cont.) (TA= 25C Unless Otherwise Noted)
SM4833NSKSymbol Parameter Test Conditions
Min. Typ. Max.Unit
Dynamic Characteristicsb
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.5 -
Ciss Input Capacitance - 2450 -
Coss Output Capacitance - 630 -
Crss Reverse Transfer Capacitance
VGS=0V,VDS=15V,Frequency=1.0MHz
- 450 -
pF
td(ON) Turn-on Delay Time - 15 27
tr Turn-on Rise Time - 18 35
td(OFF) Turn-off Delay Time - 71 127
tf Turn-off Fall Time
VDD=15V, RL=15,IDS=1A, VGEN=10V,
RG=6
- 36 65
ns
Gate Charge Characteristics b
Total Gate Charge(VGS=10V) - 65 -Qg
Total Gate Charge(VGS=4.5V) - 32 -
Qgs Gate-Source Charge - 9 -
Qgd Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=17A
- 15 -
nC
Note a : Pulse test ; pulse width 300 s, duty cycle 2%.Note b : Guaranteed by design, not subject to production testing.
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Typical Operating Characteristics
Power Dissipation
Ptot-Power(W)
Tj - Junction Temperature (C)
Drain Current
Tj - Junction Temperature
ID-DrainCurrent(A)
Thermal Transient Impedance
Norm
alizedTransientThermalResistance
Square Wave Pulse Duration (sec)
Safe Operation Area
VDS- Drain - Source Voltage (V)
ID-DrainCurrent(A)
0 20 40 60 80 100 120 140 1600.0
0.5
1.0
1.5
2.0
2.5
3.0
TA=25
oC
0 20 40 60 80 100 120 140 1600
4
8
12
16
20
TA=25
oC,V
G=10V
1E-4 1E-3 0.01 0.1 1 10 301E-3
0.01
0.1
1
2
Mounted on 1in2pad
RJA
:50oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
0.01 0.1 1 10 100 3000.01
0.1
1
10
100
500
Rds(on)L
imit
1s
TA
=25oC
10ms
300s
1.5ms
100ms
DC
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
VDS - Drain - Source Voltage (V)
ID
-DrainCurrent(A)
Output Characteristics
RDS(ON
)-On-Resistance(m)
Drain-Source On Resistance
ID - Drain Current (A)
Gate-Source On Resistance
VGS- Gate - Source Voltage (V)
RDS(ON)-On-Resistance(m)
Tj- Junction Temperature (C)
Gate Threshold Voltage
NormalizedThresholdVoltage
Typical Operating Characteristics (Cont.)
0.0 0.5 1.0 1.5 2.0 2.5 3.00
10
20
30
40
50
60
2.5V
3.5V
3V
VGS
=4,5,6,7,8,9,10V
0 10 20 30 40 50 601
2
3
4
5
6
7
8
VGS
=10V
VGS
=4.5V
2 3 4 5 6 7 8 9 100
4
8
12
16
20
IDS
=17A
-50 -25 0 25 50 75 100 125 1500.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IDS
=250A
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Drain-Source On Resistance
Norm
alizedOnResistance
Tj - Junction Temperature (C) VSD- Source - Drain Voltage (V)
Source-Drain Diode Forward
IS-SourceCurrent(A)
VDS- Drain-Source Voltage (V)
C-Capacitance(pF)
Capacitance Gate Charge
QG- Gate Charge (nC)
VGS-Gate-sourceVoltage(V)
Typical Operating Characteristics (Cont.)
-50 -25 0 25 50 75 100 125 1500.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RON
@Tj=25
oC: 3.3m
VGS
= 10V
IDS
= 17A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1
1
10
60
Tj=150
oC
Tj=25
oC
0 5 10 15 20 25 300
600
1200
1800
2400
3000
3600
4200
4800
Frequency=1MHz
CrssCoss
Ciss
0 10 20 30 40 50 60 700
1
2
3
4
5
6
7
8
9
10 VDS
=15V
IDS
=17A
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Package Information
SOP-8
A
A1
A2
L
VIEW A
0.25
SEATING PLANE
GAUGE PLANE
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension D does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension E does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
SYMBOL MIN. MAX.
1.75
0.10
0.17 0.25
0.25
A
A1
c
D
E
E1
e
h
L
MILLIMETERS
b 0.31 0.51
SOP-8
0.25 0.50
0.40 1.27
MIN. MAX.
INCHES
0.069
0.004
0.012 0.020
0.007 0.010
0.010 0.020
0.016 0.050
0
0.010
1.27 BSC 0.050 BSC
A2 1.25 0.049
0 8 0 8
3.80
5.80
4.80
4.00
6.20
5.00 0.189 0.197
0.228 0.244
0.150 0.157
D
e
EE1
SEE VIEW A
cb
hX45
SEATING PLANE < 4 mils-T-
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Application A H T1 C d D W E1 F
330.02.00 50 MIN.
12.4+2.00-0.00
13.0+0.50-0.20
1.5 MIN. 20.2 MIN. 12.00.30 1.750.10 5.50.05
P0 P1 P2 D0 D1 T A0 B0 K0SOP-8
4.00.10 8.00.10 2.00.051.5+0.10
-0.001.5 MIN.
0.6+0.00-0.40
6.400.20 5.200.20 2.100.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
AB
W
F
T
P0OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Devices Per Unit
Package Type Unit Quantity
SOP-8 Tape & Reel 2500
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
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SM4833NSK
www.sinopowersemi.com
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Jul., 2011
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)Temperature max (Tsmax)Time (Tsminto Tsmax) (ts)
100 C150 C60-120 seconds
150 C200 C60-120 seconds
Average ramp-up rate(Tsmaxto TP)
3 C/second max. 3C/second max.
Liquidous temperature (TL)Time at liquidous (tL)
183 C60-150 seconds
217 C60-150 seconds
Peak package body Temperature(Tp)*
See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5C of the specifiedclassification temperature (Tc)
20** seconds 30** seconds
Average ramp-down rate (Tpto Tsmax) 6 C/second max. 6 C/second max.
Time 25C to peak temperature 6 minutes max. 8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process Classification Temperatures (Tc)
Package
Thickness
Volume mm3
2000
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