sm4833nsk.pdf

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N-Channel Enhancement Mode MOSFET

1

SM4833NSK

www.sinopowersemi.com

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright Sinopower Semiconductor, Inc.

Rev. A.2 - Jul., 2011

Features

Applications

Pin Description

Ordering and Marking Information

N-Channel MOSFET

30V/17A,

RDS(ON)

= 4m(max.) @ VGS

= 10V

RDS(ON)

= 5.6m(max.) @ VGS

= 4.5V

Super High Dense Cell Design

Reliable and Rugged

Lead Free and Green Devices Available

(RoHS Compliant)

Top View of SOP-8

SM4833NS

Handling Code

Temperature Range

Package Code

Package Code

K : SOP-8

Operating Junction Temperature Range

C : -55 to 150 oC

Handling Code

TR : Tape & Reel

Assembly Material

G : Halogen and Lead Free Device

SM4833NS K :SM4833XXXXX XXXXX - Date Code

Assembly Material

G

S

D D

S S

D D( 5,6,7,8 )

(4)

(1, 2, 3)

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate

termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER

defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight

in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SS

SG

DD

DD

Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems.

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Rev. A.2 - Jul., 2011

Absolute Maximum Ratings (TA= 25C Unless Otherwise Noted)

Electrical Characteristics (TA

= 25C Unless Otherwise Noted)

SM4833NSKSymbol Parameter Test Conditions

Min. Typ. Max.Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A 30 - - V

VDS=24V, VGS=0V - - 1IDSS Zero Gate Voltage Drain Current

TJ=85C - - 30A

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 1.3 1.8 2.5 V

IGSS Gate Leakage Current VGS=20V, VDS=0V - - 100 nA

VGS=10V, IDS=17A - 3.3 4

RDS(ON)a

Drain-Source On-state Resistance VGS=4.5V, IDS=12A - 4.6 5.6 m

Diode Characteristics

VSDa Diode Forward Voltage ISD=3A, VGS=0V - 0.7 1.1 V

trrb Reverse Recovery Time - 40 - ns

Qrrb Reverse Recovery Charge

ISD=3A, dlSD/dt=100A/s- 37 - nC

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 30

VGSS Gate-Source Voltage 20V

TA=25C 17ID

a Continuous Drain Current (VGS=10V)

TA=70C 13

IDMa 1.5ms Pulsed Drain Current (VGS=10V) 150

ISa Diode Continuous Forward Current 3

IASb Avalanche Current (Single Pulse) 15

A

EASb Single Pulse Avalanche Energy (L=0.1mH) 28 mJ

TJ Maximum Junction Temperature 150

TSTG Storage Temperature Range -55 to 150C

TA=25C 2.5PD

a Maximum Power Dissipation

TA=70C 1.6W

RJAa,c

Thermal Resistance-Junction to Ambient t 10s 50

RJL Thermal Resistance-Junction to Lead Steady State 25C/W

Note a Surface Mounted on 1in2 pad area, t 10sec.

Note b UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25

oC).

Note c Maximum under Steady State conditions is 75 C/W.

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Electrical Characteristics (Cont.) (TA= 25C Unless Otherwise Noted)

SM4833NSKSymbol Parameter Test Conditions

Min. Typ. Max.Unit

Dynamic Characteristicsb

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.5 -

Ciss Input Capacitance - 2450 -

Coss Output Capacitance - 630 -

Crss Reverse Transfer Capacitance

VGS=0V,VDS=15V,Frequency=1.0MHz

- 450 -

pF

td(ON) Turn-on Delay Time - 15 27

tr Turn-on Rise Time - 18 35

td(OFF) Turn-off Delay Time - 71 127

tf Turn-off Fall Time

VDD=15V, RL=15,IDS=1A, VGEN=10V,

RG=6

- 36 65

ns

Gate Charge Characteristics b

Total Gate Charge(VGS=10V) - 65 -Qg

Total Gate Charge(VGS=4.5V) - 32 -

Qgs Gate-Source Charge - 9 -

Qgd Gate-Drain Charge

VDS=15V, VGS=10V,

IDS=17A

- 15 -

nC

Note a : Pulse test ; pulse width 300 s, duty cycle 2%.Note b : Guaranteed by design, not subject to production testing.

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Typical Operating Characteristics

Power Dissipation

Ptot-Power(W)

Tj - Junction Temperature (C)

Drain Current

Tj - Junction Temperature

ID-DrainCurrent(A)

Thermal Transient Impedance

Norm

alizedTransientThermalResistance

Square Wave Pulse Duration (sec)

Safe Operation Area

VDS- Drain - Source Voltage (V)

ID-DrainCurrent(A)

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

TA=25

oC

0 20 40 60 80 100 120 140 1600

4

8

12

16

20

TA=25

oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2

Mounted on 1in2pad

RJA

:50oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 100 3000.01

0.1

1

10

100

500

Rds(on)L

imit

1s

TA

=25oC

10ms

300s

1.5ms

100ms

DC

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VDS - Drain - Source Voltage (V)

ID

-DrainCurrent(A)

Output Characteristics

RDS(ON

)-On-Resistance(m)

Drain-Source On Resistance

ID - Drain Current (A)

Gate-Source On Resistance

VGS- Gate - Source Voltage (V)

RDS(ON)-On-Resistance(m)

Tj- Junction Temperature (C)

Gate Threshold Voltage

NormalizedThresholdVoltage

Typical Operating Characteristics (Cont.)

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

2.5V

3.5V

3V

VGS

=4,5,6,7,8,9,10V

0 10 20 30 40 50 601

2

3

4

5

6

7

8

VGS

=10V

VGS

=4.5V

2 3 4 5 6 7 8 9 100

4

8

12

16

20

IDS

=17A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250A

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Drain-Source On Resistance

Norm

alizedOnResistance

Tj - Junction Temperature (C) VSD- Source - Drain Voltage (V)

Source-Drain Diode Forward

IS-SourceCurrent(A)

VDS- Drain-Source Voltage (V)

C-Capacitance(pF)

Capacitance Gate Charge

QG- Gate Charge (nC)

VGS-Gate-sourceVoltage(V)

Typical Operating Characteristics (Cont.)

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25

oC: 3.3m

VGS

= 10V

IDS

= 17A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

60

Tj=150

oC

Tj=25

oC

0 5 10 15 20 25 300

600

1200

1800

2400

3000

3600

4200

4800

Frequency=1MHz

CrssCoss

Ciss

0 10 20 30 40 50 60 700

1

2

3

4

5

6

7

8

9

10 VDS

=15V

IDS

=17A

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Rev. A.2 - Jul., 2011

Package Information

SOP-8

A

A1

A2

L

VIEW A

0.25

SEATING PLANE

GAUGE PLANE

Note: 1. Follow JEDEC MS-012 AA.

2. Dimension D does not include mold flash, protrusions or gate burrs.

Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.

3. Dimension E does not include inter-lead flash or protrusions.

Inter-lead flash and protrusions shall not exceed 10 mil per side.

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0 8 0 8

3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157

D

e

EE1

SEE VIEW A

cb

hX45

SEATING PLANE < 4 mils-T-

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Application A H T1 C d D W E1 F

330.02.00 50 MIN.

12.4+2.00-0.00

13.0+0.50-0.20

1.5 MIN. 20.2 MIN. 12.00.30 1.750.10 5.50.05

P0 P1 P2 D0 D1 T A0 B0 K0SOP-8

4.00.10 8.00.10 2.00.051.5+0.10

-0.001.5 MIN.

0.6+0.00-0.40

6.400.20 5.200.20 2.100.20

(mm)

Carrier Tape & Reel Dimensions

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit

Package Type Unit Quantity

SOP-8 Tape & Reel 2500

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Taping Direction Information

SOP-8

USER DIRECTION OF FEED

Classification Profile

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Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak

Temperature min (Tsmin)Temperature max (Tsmax)Time (Tsminto Tsmax) (ts)

100 C150 C60-120 seconds

150 C200 C60-120 seconds

Average ramp-up rate(Tsmaxto TP)

3 C/second max. 3C/second max.

Liquidous temperature (TL)Time at liquidous (tL)

183 C60-150 seconds

217 C60-150 seconds

Peak package body Temperature(Tp)*

See Classification Temp in table 1 See Classification Temp in table 2

Time (tP)** within 5C of the specifiedclassification temperature (Tc)

20** seconds 30** seconds

Average ramp-down rate (Tpto Tsmax) 6 C/second max. 6 C/second max.

Time 25C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Classification Reflow Profiles

Table 2. Pb-free Process Classification Temperatures (Tc)

Package

Thickness

Volume mm3

2000

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