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French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Renatech, a network of large facilities in micro & nanotechnology
for French research
Michel de Labachelerie
French national network of large academic technology facilities
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
History: the BTR programme
Origin ! 2000: low equipment level in French nanotechnology ! Following a US expertise of French level in nanotechnologies
! A national initiative to upgrade French technology centres was needed. ! 2003: the BTR equipment upgrade program
! A Ministry of Research program : ”National network of large facilities & Basic Technological Research (BTR) in micro and nanotechnologies“
! National program led by CEA and CNRS BTR programme players CEA : 1 centre (LETI) at Grenoble
! Very large infrastructure (200 and 300 mm wafer size) ! A mission of ‘innovation creation’ and ‘transfer to industry’
CNRS : 6 large French facilities grouped in the RENATECH network ! Medium size infrastructures (500-1500 m2 clean rooms) ! Academic type research ! Industrial collaboration on new concepts feasibility
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
National map of BTR network
RENATECH (6 academic
laboratories) FEMTO
(Besançon), FMNT-INAC
(Grenoble), IEF (Orsay) IEMN (Lille), LAAS
(Toulouse), LPN
(Marcoussis)
LETI / CEA (Grenoble)
Besançon
Grenoble
Lille
Toulouse
Orsay, Marcoussis
++ Nanophotonics III-V et Si ++ Devices and circuits for spintronics + optoelectronic devices
++ Si nanoelectronics + Spintronic devices
++ System integration (Energy, RF & Photonics) + Micro and Nanosystems for biology health & environment
++ Micro-nano-opto-electronics III-V + MEMS-NEMS RF
++ Micro-Nano Acoustics + Micro-Nano Optics
CEA-LETI ++ Above IC ++ Microelectronics ++ Photonic systems + Biochips
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
5
Complementary objectives of the BTR programme
– To enhance the level of equipment • A few selected middle to large size clean-rooms in
France (so-called large technological facilities) • A network, open to the needs of the academic scientific
community and of industrial research projects.
– To focus a scientific program on few priority areas • Micro- and Nanoelectronics, Spintronics, Photonics and
optoelectronics, Micro-, Nano- and Biosystems
– To enhance the use of joint vision and exploitation of research results
• Setting up a unit, in charge of the scientific survey in the field of Micro &Nanotechnologies.
• Promoting patenting and researcher mobility.
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Procedures and tools for the processing of exogenous projects in the facilities
• Renatech procedure for external projects: – A technical team receives the proposed projects: assessment of
technological feasibility, cost evaluation and time schedule – Cost agreement between the user and the technical facility – Definition of user training program
In 2010 the basic hour rate has been defined for CNRS facilities: Basic access hour rate for academic users: 55 €/hour for industrial users: 200 €/hour Total cost = (basic hour rate x resources coefficient x nb. Hours + personnel involved
into the project (if necessary) + specific project consumables
• Contact with Renatech – RENATECH network web site: www.rtb.cnrs.fr – Email alias for project dispatching and for referring to all the
technological facilities (rtb-accueil@cnrs-dir.fr) – Formal access rules (« Charte d’accueil »)
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Exogenous projects survey of RENATECH facilities: 2009-2010
• Origin of exogeneous projects: – Academic projects in 2009: 24% – Industrial projects in 2009: 12,4%
A tendency in 2009: 3% reduction of academic national projects and 3% increase of industrial projects
• 365 external projects handled by Renatech in 2009 (of which 71% requiring specific developments)
• 33 rejected for the lack of proper process tools
X 3 increase since beginning of BTR programme !
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
• Thematic distribution of exogenous projects in 2009
Training & working of external researchers in the clean rooms has doubled in 3 years
• Satisfaction inquiry
Exogenous projects survey of RENATECH facilities: 2009-2010
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Dissemination & communication
• RENATECH newsletter – Was launched in Feb. 2010 – Will be published 3 times a year – Will follow up the evolution of the network, diffuse acute information concerning the specific technical tools, recent technological realisations, events and useful information concerning opening of the facilities.
• Public – CNRS scientific institutes – Industrial companies
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
- 1D ballistic HEMT as switch for multiplexing specifications: - Low capacitance CGS <1 fF - Low open RDS resistance ~10 kΩ - Low IGS (shot noise) < 1pA - Low power consumption < nW Collaboration: CNRS/Institut Néel grant CNES: DCMB
HEMTs developed at LPN for high impedance very low temperature readout electronics
100 mK
100 mK
Circuit noise performance
- Cryogenic HEMTs with an input voltage noise below 1 nV/√Hz at 1 kHz for preamplifiers at or below 4.2 K Ongoing: CESAR project - FP7 - SPACE - 263455 Collaborations are welcome
1 nV/√Hz
1 kHz
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Matrices haute impédance sur membranes structurées par gravure XeF2
Le XeF2 se présente sous la forme solide. Il passe à l’état gazeux à environ 3,8 Torr à 25 ° C. Le silicium se grave de façon isotrope très sélecGve jusqu’à (1000:1) vis-‐à-‐vis de la résine du SiO2, du nitrure de silicium, de l’aluminium….
Membranes ajourées suspendues en nitrure de silicium 3x3 mm épaisseur 500 nm.
Financement de l’équipement : BQR 2008 Université Paris-‐sud-‐11 et projet DCMB
Contact InsGtut NEEL : Philippe Camus philippe.camus@grenoble.cnrs.fr
RéalisaGon des premières matrices de bolomètres hautes impédances en NbSi sur membranes de nitrure structurées (2009).
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
• Identify scientific challenges and useful investments for the requirements of future R&D work – Purchase equipments according to the real requirements of the scientific
community ;
• Organize the specificities of BTR facilities to reach strong and non-redundant know-how in specific fields ; – Identify the contribution of each facility versus national roadmap ;
• Stimulate coordinated actions : technological developments, information dissemination, to support scientific challenges ; – Organize technological development projects gathering several facilities;
To organize the network in order to use efficiently the taxpayer’s money…
Requirements for network organization and networking activities
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
OMNT : a shared CEA & CNRS tool to collect information
• Strategic survey of micro & nanotechnologies created in 2005 by CNRS & CEA
• 270 researchers from both organizations sharing their expertise to identify trends, breakthroughs, and teams working in this field, using available information.
• Dissemination of various documents: – Two-monthly + annual reports on technical-economical & scientific news – Nanodigest concentrating top scientific news in nanotechnologies
• Organisation of annual seminars & topical meetings.
A very useful tool for benchmarking in the BTR network
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
• A limited number of challenges for each selected field – 2 wide scope « grand challenges » – A clear impact on society stakes & basic
scientific challenges • A shared collective interest
– Maximizing potential interest of scientific community ;
A network organization for the identification of priorities
• Selection of 6 scientific fields, followed by Renatech experts in each field.
• Identification key technological processes • Identification of required equipments to
support challenges • 30% of investment targeted on key
equipments
Technological fields Micro & nanoelectronics Spintronics Photonics MEMS & NEMS Micro & nanoacoustics BioMEMS Characterization & metrology Simulation
• An already strong position of BTR network in each field (by benchmarking of remarkable results from BTR network)
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
■ SOCIETY STAKES : high performance electronics at low power : autonomous systems for TIC, health, environment, energy management and saving. Increase in integration density via 3D integration
■ Challenge 1 : Scaling driven nanoelectronics and beyond CMOS Description: Advanced MOSFETs, NW-FET. Materials for new memory devices. Low T processing. Graphene integration at wafer level Key technologies: Understand early stages of materials growth. Impact of 3D integration on device operation: new materials. LT processing, coupling effects. Alternative technologies (NWs, CNTs, graphene…) Examples of key equipments: Low temperature PECVD reactor with in- situ diagnosis tools. (XPS, ellipsometry, mass spectroscopy…) : LT growth of NWs: 3D integration of NW-FETs
■ Challenge 2 : Integration of heterogeneous system blocks Description: Integration on a CMOS platform of RF blocks : power devices, optical links, sensing devices, energy harvesting and storage… Key technologies: Power management efficiency. Flexible substrates: plastic substrates combined with Si-based nanoelectronics, interface of nanoelectronics to other fields (sensing…) Examples of key equipments: Seed layer CVD 3D integration TSV: conformal deposition of diffusion barriers in TSVs.
Example : « Micro-Nano Electronics » challenge
BTR players : FMNT, IEF, IEMN, LAAS, LETI, LPN,
SiP integration technologies and temperature/heat management
Graphene/SiC, AFM image showing monolayer steps
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Elaborating a Renatech roadmap dedicated to INSU A&A activities ?
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Thank you for your attention !
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Matrice de bolomètres haute impédance à antennes et dissipateurs : antennes à orientaGons et géométries variables sur membranes pleines
Contact InsGtut NEEL : Alessandro Monfardini alessandro.monfardini@grenoble.cnrs.fr
EvoluGon vers une matrice de bolomètres haute impédance mulG antennes avec dissipateurs sur membranes structurées (2008):
2
1 3
4-‐6
5
1 mm
1 2
3
4 5 6
Réponse des différents pixels à la polarisaGon en foncGon de l’angle d’un polariseur tournant (2007)
T (mK)
R (MOhm
)
0
0,5
1
1,5
2
2,5
3
3,5
4
100 200 300 400 500 600 700
R(T)1
R M4R N5R F3
R M4
T
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Contact IAS : François Pajot francois.pajot@ias.u-‐psud.fr Contact APC : Michel Piat michel.piat@apc.univ-‐paris7.fr
Large bolometer arrays with superconducGngNbSi sensors for future space experiments F. Pajot, Y. AGk, C. Evesque, S. Lefranc, B. Leriche, J.-‐P. Torre, B. Belier, N. Marsot, L. Dumoulin, L. Berge, M. Piat, E. Breelle, D. Prêle, C. Hoffmann, T. Durand, P.Camus, D. Santos, Y. Jin, and M. Giard Journal of Low Temperature Physics, Vol. 151 1/2, 2008, pp. 513-‐517.
R(T) et α = T/RxdR/dT de TES en NbSi (15.18 % de Nb)
CaractérisaGon en froid de la transiGon des TES NbSi (2008)
Matrice de bolomètres supraconducteurs de type TES à absorbeurs sur membranes pleines
Mesure de bruit avec chaine de lecture à SQUID de TES sur membranes pleines ( 2011). Bain cryogénique à 350 mK, polarisaGon du TES en tension qui fixe une Tc de 412 mK
French national network of large academic technology facilities
INSU A&A R&T workshop, May 10. 2011
Contact APC : Michel Piat michel.piat@apc.univ-‐paris7.fr
OMT (OrthoMode Transducer) diplexeur de polarisaGon et sa structure de calibraGon
Orthomode transducer (à droite) et sa structure d’étalonnage (à gauche). Mesure de la transmission sur membranes pleines antennes et lignes en Nb à température ambiante, 77K et 4K en foncGon de la fréquence. ( 2011).
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