low noise charge sensitive preamplifier development for the panda calorimeter
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Peter, Wieczorek - EEPeter, Wieczorek - EE
Low Noise Charge Low Noise Charge Sensitive Preamplifier Sensitive Preamplifier Development for the Development for the PANDA CalorimeterPANDA Calorimeter
Design and Measurements of Design and Measurements of the APFEL - Chipthe APFEL - Chip
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
OutlineOutline
1.1. PANDA – Experiment OverviewPANDA – Experiment Overview
2.2. Design of the APFEL – Chip Design of the APFEL – Chip
3.3. Measurements of the ASIC – PerformanceMeasurements of the ASIC – Performance
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
1. The PANDA-Experiment1. The PANDA-Experiment
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
PANDA - Experiment PANDA - Experiment
PANDAPANDA
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Physical GoalsPhysical Goals
The aim of the PANDA – experiment is the better understanding The aim of the PANDA – experiment is the better understanding
of the strong interaction as well as the structure and dynamics of the strong interaction as well as the structure and dynamics
of hadrons of hadrons
Studies of bound quarks using Studies of bound quarks using
meson spectroscopie meson spectroscopie
Bound qq – states Bound qq – states
Theoretical description Theoretical description
by QCD by QCD
Looking for exotic states Looking for exotic states
Hybrids (qqg) Hybrids (qqg)
Glueballs (ggg) Glueballs (ggg)
MoleculeMolecule
Molecules
Gluons
Mesons
p Momentum [GeV/c]
Mass [GeV/c2]
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Charmonium SpectraCharmonium Spectra
Charmonium: cc – quarks Charmonium: cc – quarks
Spectra of exicited statesSpectra of exicited states
Activation of all states by pp Activation of all states by pp – interaction– interaction
Search of the theoretical Search of the theoretical predicted mesonspredicted mesons
Detection of charged and neutral particals over the whole solid angleDetection of charged and neutral particals over the whole solid angle
p Momentump Momentum [GeV/c][GeV/c]
Mass Mass [GeV/c[GeV/c22]]
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
PANDA - DetectorPANDA - Detector
TargetTargetSolenoidSolenoid
DipolDipol
STTSTT
RICHRICH
EMCEMC HCHC
MyondetectorMyondetector
EMCEMC MVDMVDDIRCDIRC STTSTT
p
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Electromagnetic CalorimeterElectromagnetic Calorimeter
Photon detection by the Photon detection by the
electromagnetic calorimeter electromagnetic calorimeter
11000 crystals (Barrel)11000 crystals (Barrel)
Used scintillator material: Used scintillator material:
PbWOPbWO44
To increase the crystal light To increase the crystal light
yield the calorimeter will yield the calorimeter will
operate at a operate at a temperature of temperature of
T = - 20°C T = - 20°C
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Scintillator MaterialScintillator Material
PhotonPhoton ee
--
ee++
…..
?
Output VoltageOutput VoltageOutput VoltageOutput Voltage
Readout ElectronicsReadout ElectronicsReadout ElectronicsReadout ElectronicsAvalanche PhotodiodeAvalanche PhotodiodeAvalanche PhotodiodeAvalanche PhotodiodeScintillator Crystal Scintillator Crystal Scintillator Crystal Scintillator Crystal
λmax
= 430 nm
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Requirements Requirements
Noise: Noise: ENC = 4500 eENC = 4500 e-- ( ( ≈ ≈ 0,7 fC)0,7 fC)
Max. input charge: Max. input charge: QQmaxmax = 7 pC = 7 pC
Dyn. range:Dyn. range: 1000010000
Event rate: Event rate: ≈ ≈ 350 kHz350 kHz
Avalanche photodiode:Avalanche photodiode:
Detector capacitance: Detector capacitance: CCdet det = 300 pF = 300 pF
Dark current: Dark current: IId d = 50 nA at M = 50 = 50 nA at M = 50
Operation Temperature: Operation Temperature: T = -20°C T = -20°C
Power dissipation: Power dissipation: P < 60 mW/Channel P < 60 mW/Channel
Very compact calorimeter design Very compact calorimeter design
High integration level of the readout electronicsHigh integration level of the readout electronics
Development of an application specific integrated Development of an application specific integrated
circuitcircuit
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
2. APFEL - Chip Design2. APFEL - Chip Design((AAsic for sic for PPanda anda FFrontend rontend
ELELectronics)ectronics)
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Noise CalculationsNoise Calculations
Preselection of the free parameters:
W = 12000 µm, Ids = 2 mA and = 250 ns
W
Ids
Area ~ SignalNoise
Feasibility study for integrated Feasibility study for integrated
calorimeter readout electronicscalorimeter readout electronics
The dominant noise source is the input The dominant noise source is the input
transistortransistor
Transistor noise is a function ofTransistor noise is a function of
Transistorwidth WTransistorwidth W
Current ICurrent Idsds
Integration time Integration time
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Readout ConceptReadout Concept
Readout is realized in three stagesReadout is realized in three stages
First readout stage is a low noise Charge Sensitive Amplifier First readout stage is a low noise Charge Sensitive Amplifier (CSA) based on a folded cascode circuit(CSA) based on a folded cascode circuit
Second stage consists of a differentiator and three first order Second stage consists of a differentiator and three first order integratorsintegrators
Semi gaussian pulse form Semi gaussian pulse form Improvement of the Signal-to-Noise-Ratio (SNR)Improvement of the Signal-to-Noise-Ratio (SNR)
The last stage is an output/line driver, which can cope with a The last stage is an output/line driver, which can cope with a load of 10 pF || 50 kload of 10 pF || 50 kΩΩ
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Concept of the Readout Concept of the Readout ElectronicElectronic
-
Charge Sensitive Charge Sensitive AmplifierAmplifier
Output Stage Output Stage Shaper Stage Shaper Stage
PreampPreamp
First ShaperFirst Shaper
Second ShaperSecond Shaper
Third ShaperThird Shaper
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Chip OverviewChip OverviewShaper StageShaper Stage
Ou
tpu
t S
tag
eO
utp
ut
Sta
ge
Ch
arg
e S
ensi
tive
Pre
amp
lifie
rC
har
ge
Sen
siti
ve P
ream
plif
ier
Channel 1Channel 1
Channel 2Channel 2
Voltage ReferencesVoltage References
Used prozess: Used prozess:
350 nm - CMOS 350 nm - CMOS
Dimensions: Dimensions:
3,3 mm x 3,3 mm 3,3 mm x 3,3 mm
Pins: 64Pins: 64
Components: Components:
Transistors: 4841 Transistors: 4841
Capacitors: 1729Capacitors: 1729
Resistors: 386 Resistors: 386
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
3. Chip Characterisation3. Chip Characterisation
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
PCB for the ASIC PCB for the ASIC CharacterisationCharacterisation
For the characterisation of the For the characterisation of the ASIC a PCB was designed ASIC a PCB was designed
Power supply (Vddc,Vddt): 3.3 Power supply (Vddc,Vddt): 3.3 V V
For measurements a voltage For measurements a voltage step step ΔΔV injected to a coupling V injected to a coupling capacitancecapacitance
With the voltage step With the voltage step ΔΔV and V and the capacitance Cthe capacitance Cinin the the injected input charge can be injected input charge can be calculated to Qcalculated to Qinin = = CCinin ΔΔVV
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
CoolingCooling
For cooling an external For cooling an external controlled Peltier-Element is controlled Peltier-Element is used used
Measurements in the range Measurements in the range of T=-20°C up to T=+20°C of T=-20°C up to T=+20°C could be realized could be realized
The current ASIC The current ASIC temperature is measured temperature is measured by a PT100by a PT100
Input Output
Cooper
Peltier Element
PT100
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Measurement Setup (1)Measurement Setup (1)
Measurements are Measurements are performed in an evacuated performed in an evacuated environment environment
Water cooling for heat Water cooling for heat sinkingsinking
Electrical connections are Electrical connections are done via BNC - connectors done via BNC - connectors
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Measurement Setup (2)Measurement Setup (2)
Power Supply
Signal Generator
AWG
Programming
Oscilloscope
Temperature Controller
PCB
Defined input step Defined input step ΔΔV V by an AWGby an AWG
Measuring the output Measuring the output pulse characteristics at pulse characteristics at
Different Different temperatures temperatures Different detector Different detector capacitancescapacitances
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Output Pulse Output Pulse
Amplitude & Rise Amplitude & Rise time time
NoiseNoise
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Measured ResultsMeasured Results
RequirementRequirements: s:
Results at Results at T = - 20° C T = - 20° C Unit:Unit:
Noise: Noise: 4500 4500 4456 4456 ± 35± 35 ee--
Max. input charge:Max. input charge: 7 7 7,847,84 pCpC
Dyn. range:Dyn. range: 1000010000 1088910889 11
Integration time:Integration time: 250250 248 248 ± 3± 3 nsns
Max. event rate:Max. event rate: 350 350 500500 kHzkHz
Power:Power: < 60< 60 52 52 ± 1± 1 mWmW
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
StatusStatus
The developed APFEL- chip fulfills all requirements The developed APFEL- chip fulfills all requirements
First preliminary radiation tests have been doneFirst preliminary radiation tests have been done
Next stepsNext steps
More detailed radiation tests are necessary More detailed radiation tests are necessary
Readout of an array of crystalsReadout of an array of crystals
19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE
Thank you for your attention
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