low noise charge sensitive preamplifier development for the panda calorimeter

Peter, Wieczorek - EEPeter, Wieczorek - EE

Low Noise Charge Low Noise Charge Sensitive Preamplifier Sensitive Preamplifier Development for the Development for the PANDA CalorimeterPANDA Calorimeter

Design and Measurements of Design and Measurements of the APFEL - Chipthe APFEL - Chip

19.05.200819.05.2008 Peter, Wieczorek - EEPeter, Wieczorek - EE

OutlineOutline

1.1. PANDA – Experiment OverviewPANDA – Experiment Overview

2.2. Design of the APFEL – Chip Design of the APFEL – Chip

3.3. Measurements of the ASIC – PerformanceMeasurements of the ASIC – Performance


1. The PANDA-Experiment1. The PANDA-Experiment


PANDA - Experiment PANDA - Experiment

PANDAPANDA


Physical GoalsPhysical Goals

The aim of the PANDA – experiment is the better understanding The aim of the PANDA – experiment is the better understanding

of the strong interaction as well as the structure and dynamics of the strong interaction as well as the structure and dynamics

of hadrons of hadrons

Studies of bound quarks using Studies of bound quarks using

meson spectroscopie meson spectroscopie

Bound qq – states Bound qq – states

Theoretical description Theoretical description

by QCD by QCD

Looking for exotic states Looking for exotic states

Hybrids (qqg) Hybrids (qqg)

Glueballs (ggg) Glueballs (ggg)

MoleculeMolecule

Molecules

Gluons

Mesons

p Momentum [GeV/c]

Mass [GeV/c2]


Charmonium SpectraCharmonium Spectra

Charmonium: cc – quarks Charmonium: cc – quarks

Spectra of exicited statesSpectra of exicited states

Activation of all states by pp Activation of all states by pp – interaction– interaction

Search of the theoretical Search of the theoretical predicted mesonspredicted mesons

Detection of charged and neutral particals over the whole solid angleDetection of charged and neutral particals over the whole solid angle

p Momentump Momentum [GeV/c][GeV/c]

Mass Mass [GeV/c[GeV/c22]]


PANDA - DetectorPANDA - Detector

TargetTargetSolenoidSolenoid

DipolDipol

STTSTT

RICHRICH

EMCEMC HCHC

MyondetectorMyondetector

EMCEMC MVDMVDDIRCDIRC STTSTT

p


Electromagnetic CalorimeterElectromagnetic Calorimeter

Photon detection by the Photon detection by the

electromagnetic calorimeter electromagnetic calorimeter

11000 crystals (Barrel)11000 crystals (Barrel)

Used scintillator material: Used scintillator material:

PbWOPbWO44

To increase the crystal light To increase the crystal light

yield the calorimeter will yield the calorimeter will

operate at a operate at a temperature of temperature of

T = - 20°C T = - 20°C


Scintillator MaterialScintillator Material

PhotonPhoton ee

--

ee++

…..

?

Output VoltageOutput VoltageOutput VoltageOutput Voltage

Readout ElectronicsReadout ElectronicsReadout ElectronicsReadout ElectronicsAvalanche PhotodiodeAvalanche PhotodiodeAvalanche PhotodiodeAvalanche PhotodiodeScintillator Crystal Scintillator Crystal Scintillator Crystal Scintillator Crystal

λmax

= 430 nm


Requirements Requirements

Noise: Noise: ENC = 4500 eENC = 4500 e-- ( ( ≈ ≈ 0,7 fC)0,7 fC)

Max. input charge: Max. input charge: QQmaxmax = 7 pC = 7 pC

Dyn. range:Dyn. range: 1000010000

Event rate: Event rate: ≈ ≈ 350 kHz350 kHz

Avalanche photodiode:Avalanche photodiode:

Detector capacitance: Detector capacitance: CCdet det = 300 pF = 300 pF

Dark current: Dark current: IId d = 50 nA at M = 50 = 50 nA at M = 50

Operation Temperature: Operation Temperature: T = -20°C T = -20°C

Power dissipation: Power dissipation: P < 60 mW/Channel P < 60 mW/Channel

Very compact calorimeter design Very compact calorimeter design

High integration level of the readout electronicsHigh integration level of the readout electronics

Development of an application specific integrated Development of an application specific integrated

circuitcircuit


2. APFEL - Chip Design2. APFEL - Chip Design((AAsic for sic for PPanda anda FFrontend rontend

ELELectronics)ectronics)


Noise CalculationsNoise Calculations

Preselection of the free parameters:

W = 12000 µm, Ids = 2 mA and = 250 ns

W

Ids

Area ~ SignalNoise

Feasibility study for integrated Feasibility study for integrated

calorimeter readout electronicscalorimeter readout electronics

The dominant noise source is the input The dominant noise source is the input

transistortransistor

Transistor noise is a function ofTransistor noise is a function of

Transistorwidth WTransistorwidth W

Current ICurrent Idsds

Integration time Integration time


Readout ConceptReadout Concept

Readout is realized in three stagesReadout is realized in three stages

First readout stage is a low noise Charge Sensitive Amplifier First readout stage is a low noise Charge Sensitive Amplifier (CSA) based on a folded cascode circuit(CSA) based on a folded cascode circuit

Second stage consists of a differentiator and three first order Second stage consists of a differentiator and three first order integratorsintegrators

Semi gaussian pulse form Semi gaussian pulse form Improvement of the Signal-to-Noise-Ratio (SNR)Improvement of the Signal-to-Noise-Ratio (SNR)

The last stage is an output/line driver, which can cope with a The last stage is an output/line driver, which can cope with a load of 10 pF || 50 kload of 10 pF || 50 kΩΩ


Concept of the Readout Concept of the Readout ElectronicElectronic

-

Charge Sensitive Charge Sensitive AmplifierAmplifier

Output Stage Output Stage Shaper Stage Shaper Stage

PreampPreamp

First ShaperFirst Shaper

Second ShaperSecond Shaper

Third ShaperThird Shaper


Chip OverviewChip OverviewShaper StageShaper Stage

Ou

tpu

t S

tag

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ut

Sta

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Ch

arg

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Pre

amp

lifie

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Sen

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Channel 1Channel 1

Channel 2Channel 2

Voltage ReferencesVoltage References

Used prozess: Used prozess:

350 nm - CMOS 350 nm - CMOS

Dimensions: Dimensions:

3,3 mm x 3,3 mm 3,3 mm x 3,3 mm

Pins: 64Pins: 64

Components: Components:

Transistors: 4841 Transistors: 4841

Capacitors: 1729Capacitors: 1729

Resistors: 386 Resistors: 386


3. Chip Characterisation3. Chip Characterisation


PCB for the ASIC PCB for the ASIC CharacterisationCharacterisation

For the characterisation of the For the characterisation of the ASIC a PCB was designed ASIC a PCB was designed

Power supply (Vddc,Vddt): 3.3 Power supply (Vddc,Vddt): 3.3 V V

For measurements a voltage For measurements a voltage step step ΔΔV injected to a coupling V injected to a coupling capacitancecapacitance

With the voltage step With the voltage step ΔΔV and V and the capacitance Cthe capacitance Cinin the the injected input charge can be injected input charge can be calculated to Qcalculated to Qinin = = CCinin ΔΔVV


CoolingCooling

For cooling an external For cooling an external controlled Peltier-Element is controlled Peltier-Element is used used

Measurements in the range Measurements in the range of T=-20°C up to T=+20°C of T=-20°C up to T=+20°C could be realized could be realized

The current ASIC The current ASIC temperature is measured temperature is measured by a PT100by a PT100

Input Output

Cooper

Peltier Element

PT100


Measurement Setup (1)Measurement Setup (1)

Measurements are Measurements are performed in an evacuated performed in an evacuated environment environment

Water cooling for heat Water cooling for heat sinkingsinking

Electrical connections are Electrical connections are done via BNC - connectors done via BNC - connectors


Measurement Setup (2)Measurement Setup (2)

Power Supply

Signal Generator

AWG

Programming

Oscilloscope

Temperature Controller

PCB

Defined input step Defined input step ΔΔV V by an AWGby an AWG

Measuring the output Measuring the output pulse characteristics at pulse characteristics at

Different Different temperatures temperatures Different detector Different detector capacitancescapacitances


Output Pulse Output Pulse

Amplitude & Rise Amplitude & Rise time time

NoiseNoise


Measured ResultsMeasured Results

RequirementRequirements: s:

Results at Results at T = - 20° C T = - 20° C Unit:Unit:

Noise: Noise: 4500 4500 4456 4456 ± 35± 35 ee--

Max. input charge:Max. input charge: 7 7 7,847,84 pCpC

Dyn. range:Dyn. range: 1000010000 1088910889 11

Integration time:Integration time: 250250 248 248 ± 3± 3 nsns

Max. event rate:Max. event rate: 350 350 500500 kHzkHz

Power:Power: < 60< 60 52 52 ± 1± 1 mWmW


StatusStatus

The developed APFEL- chip fulfills all requirements The developed APFEL- chip fulfills all requirements

First preliminary radiation tests have been doneFirst preliminary radiation tests have been done

Next stepsNext steps

More detailed radiation tests are necessary More detailed radiation tests are necessary

Readout of an array of crystalsReadout of an array of crystals


Thank you for your attention

low noise charge sensitive preamplifier development for the panda calorimeter

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