infineon hybridpack drive fs820r08a6p2b · 2017-06-07 · this full reverse costing study has been...
Post on 10-Mar-2020
0 Views
Preview:
TRANSCRIPT
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 1
21 rue la Noue Bras de Fer44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr
Infineon FS820R08A6P2BHybridPACK Drive 750V IGBT Module Power Semiconductor report by Elena Barbarini June 2017 – version 1
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 2
SUMMARY
Overview / Introduction 3
o Executive Summary
o Reverse Costing Methodology
Company Profile 8
o Infineon
Physical Analysis 12
o Synthesis of the Physical Analysis
o Package analysis
Package opening
Package Cross-Section
o IGBT Die
IGBT Die View & Dimensions
IGBT Die Process
IGBT Die Cross-Section
IGBT Die Process Characteristic
IGBT Manufacturing Process 45
o IGBT Die Front-End Process
o IGBT Die Fabrication Unit
o Final Test & Packaging Fabrication unit
Cost Analysis 55
o Synthesis of the cost analysis
o Yields Explanation & Hypotheses
o IGBT die
IGBT Front-End Cost
IGBT Die Probe Test, Thinning & Dicing
IGBT Wafer Cost
IGBT Die Cost
o Complete IGBT
Packaging Cost
Final Test Cost
Component Cost
Price Analysis 68
o Estimation of selling price
Comparison 71
o Comparison between Infineon HybridPACK2
o Comparison between Infineon IGBT4 and IDT2
Company services 75
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 3
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Executive Summary
This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost and selling priceof the Infineon FS820R08A6P2B 750V 820A IGBT module.
The HybridPack Power module is the latest power packaging specifically designed for automotive applications. TheFS820R08A6P2B is driving 820A and uses a new copper pin-fin dissipation structure optimized for direct liquid cooling andimproving the thermal cycles capability and extends the lifetime of the power module.
The terminals are connected directly on the DBC without wire bonding and the new press-fit pin technology allows an easy andoptimized system integration.
The IGBT diode is manufactured with the new EDT design which allows reduction of conduction losses and switching losses.
Based on a complete teardown analysis, the report also provides an estimation of the production cost of the IGBT, Diode andpackage.
Moreover, the report proposes a comparison between IGBT4 and EDT Infineon design and betweenHubridPack2 andHybridPack drive, highlights the differences in design and manufacturing process and their impact on device size andproduction cost.
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 4
Overview / Introduction
Company Profile & SupplyChain o Infineon Profileo Infineon Products
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Infineon FS820R08A6P2B Datasheet
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 5
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Synthesis of the Physical Analysis
Hybridpack:
o Dimensions: xxxmm x xxxmm xxxmm
o Number of Pins: xx-pin
IGBT:
o Dimension: xxxmm x xxxmm = xxxxmm²
o Electrical Connection: xxxx bonding
o Placement in the package: xxxxxx on DBC
Package
IGBT
Package opening – Optical View
Diode:
o Dimension: xxxmm x xxxxxmm = xxxxmm²
o Electrical Connection: xxxxxxbonding
o Placement in the package: xxxxxxx on DBC
Diode
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 6
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package Markings
Package markings
Marking:
Infineon Logo G1611
FS820R8A6P2B_ENG 00049
HybridPACK Drive
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 7
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package dimensions
o Pin fin baseplate size: xxxx mm
o Pin fin lenght: xxxx mm
o Pin fin pitch: xxxxx mm
Package Back view
Package Side view
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 8
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package opening
Wire Bonding per DBC:
Source
o xxx xxxxwire.
o Diameter: xxxxµm.
o Medium length: xxxxmm
o x stitch
Gate
o xxx Aluminium wire.
o Diameter: xxxxµm.
o Medium length: xxxxmm
o xxxxxstitch
3 IGBT dies of xxxA are assembled in parallel
1 Thermistor xxxxxx on each DBC substrate
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 9
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package opening
Package Cross section
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 10
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
xxxx
mm
IGBT die Dimensions
IGBT Die – Optical view
o Die dimensions:xxxx mm² (xxxxmm x xxxxmm)
o There is no marking on the die.
xxxxx mm
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 11
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die process
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 12
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section – SEM View
o Substrate thickness: xxxx µm
xxxxx µm
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 13
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section
polyimide
Die cross section
Guard ring SourceScribe line Implant
Implant Implant
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 14
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section – SEM View
o Transistor pitch: xxx µm
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 15
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section- Drain
Die cross section – SEM View
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 16
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
xxxx
mm
Diode die Dimensions
Diode Die – Optical view
o Die dimensions:xxxx mm² (xxxxmm x xxxxxmm)
o There is no marking on the die.
xxxx mm
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 17
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section – SEM View
o Substrate thickness: xxx µm
xxxx µm
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 18
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section Die cross section
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 19
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo IGBT Fab Unito IGBT Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Description of the Wafer Fabrication Units - Diode
In our calculation, we simulate a production unit using xxxmm wafers.
Diode wafer fab unit:
Name: Infineon xxxxmm thin wafer
Wafer diameter: xxxxmm (x-inch)
Capacity: xxxxx,000 wafers / month
Year of start: xxxxx
Most advanced process: Power device
Products: Discrete/Power - Mainly power products; Diodes & IGBT
Location: Villach, Austria
This manufacturing line has been created in xxxxxx. We assume that the clean room and equipments are depreciated.
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 20
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo IGBT Fab Unito IGBT Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
IGBT Process Flow
IGBT Wafer Process:
o The manufacturing of the IGBT begins with the implantation and the trench etching. Then the oxide layers and the polysilicon are deposited and patterned. Then the aluminum layer is deposited. Finally a thin passivation layer is reported.
o The wafer is backgrinded to have 70µm of thickness. The implantation on the backside are performed. Finally, the metal layers on the backside are depositied.
o A polyimide protection layer is deposited on the guard ring and on the gate supply line.
IGBT Structure Schema
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 21
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo IGBT Fab Unito IGBT Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
IGBT Process Flow
IGBT Structure Schema
Si wafer
• Guard ring Implantation
Si wafer
• Trench etching
Si Wafer
• Floating P region implantation
• Base P implantation
• Emitter N + implantation
Guard ring implantation #1
Trench
P base doping N+ emitter doping
Guard ring implantation #2
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 22
Si wafer
• Guard ring Implantation
• P anode implantation
Si wafer
• Oxide 1
• Polysilicon
• Oxide 2
Si Wafer
• Aluminum
• Backside
• Polyimide
Guard ring implantation
Oxide 2
P anode implantation
Metal deposition on the backside :- Ohmic contact in aluminum. - A thin Ti layer to stop the metal diffusion- A Ni-Ag layer in order to protect the back side from the corrosion and enhance the solder
Aluminum
Polyimide
Oxide 1Polysilicon
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 23
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Main steps of economic analysis
DBC Assembly
Hybridpack Assembly
Final Test Cost
IGBT
Front-End Costxxxxx
xxxxxx
We perform the economic analysis of the component with the Power CoSim+
IGBT
Back end Cost
Diode
Front-End Cost
Diode
Back end Cost
xxxxx
xxxxxxxxxxx
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 24
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Yields Explanation
The wafers and dies are tested during the process flow. There are 2 types of test :
The tests on the physical characteristics of the wafer like the thickness deposited.
The tests on the electrical functionalities of the die.
The difference is important because with the physical test, a bad result means a problem on a step and all the dies on the wafer are defective, so the wafer is scrapped. Usually these yields are good for mature technologies.
The tests on the dies are different. Each die is tested, one by one or simultaneously using “parallel” tests, and only the defective dies are scraped. During the probe test which is realized on the wafer, the defective dies are marked and are not assembled in package.
Yield Apply on Description
Manufacturing Yield IGBT + Diode The defective wafers are scraped
Probe yield IGBT + Diode
The defective dies are scrapedThe number of good dies is function of the probe yield. Only the good dies are assembled in the package
Dicing Yield IGBT + Diode The defective dies are scraped
Packaging yield IGBT + Diode + Package The defective components are scraped
Final test yield IGBT + Diode + Package The defective components are scraped
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 25
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
IGBT Front-End Cost
The front-end cost ranges from $xxxx to $xxxx accordingto yield variations.
The main part of the wafer cost is due to the xxxxx (32%).
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 26
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
IGBT Die Cost
The IGBT Component cost ranges from $xxx to $xxxaccording to yield variations.
The Front-end manufacturing represents xxx of thecomponent cost (medium yield estimation).
Probe test, dicing and scrap account for xxxx% of thecomponent cost.
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 27
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Diode Wafer Cost per process steps
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 28
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Diode Die Cost
The IGBT Component cost ranges from $xxxx to $xxxxaccording to yield variations.
The xxxxx manufacturing represents xxxx% of thecomponent cost (medium yield estimation).
Probe test, dicing and scrap account for xxxx% of thecomponent cost.
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 29
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Packaging Cost
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 30
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Component Cost
The component cost ranges from $xxx to $xxxxxaccording to yield variations.
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 31
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Estimated Manufacturer Price
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 32
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
Power Semiconductors & Modules• SP14186 - Infineon FS100R12PT4 EconoPACK4• SP13136 Infineon FS600R07A2E3 Hybridpack2• Rohm BSM180D12P3C007 1200V Trench SiC MOSFET• SP16281 - Infineon_CoolIR_IGBT_Module• SP16287 - Toyota Prius PCU Power Modules• SP15213 - CREE CAS300M17BM2 SiC MOSFET• SP15232 - Semikron SKiM306GD12E4 solderless module
Related Reports
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 33
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
Power Semiconductors & Compound• Infineon – IPB60R280C6 600V CoolMOS C6 MOSFET• Infineon FS100R12PT4 EconoPACK™4 1200V IGBT4
Module • Infineon FS600R07A2E3 HybridPACK2 100KW 3-phase • ROHM 1200V Trench SiC MOSFET BSM180D12P3C007
Module• SP Infineon CooliR²Die™ Power Module • Toyota Prius 4 PCU Power Modules • CREE 1700V SiC Module First 1700V SiC MOSFET with Z-
Rec SiC Diode • SEMIKRON SKiM306GD12E4 1200V 300A IGBT Solderless
Module
Related Reports
MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT
• Power Module Packaging: Material Market and Technology Trends 2017
• IGBT Market and Technology Trends
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 34
COMPANYSERVICES
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 35
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
Business Models Fields of Expertise
Custom Analyses(>130 analyses per year)
Reports(>40 reports per year)
Costing Tools
Trainings
©2017 by System Plus Consulting | Infineon FS820R08A6P2B 36
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
Contact
Headquarters21 rue La Noue Bras de Fer44200 NantesFRANCE+33 2 40 18 09 16sales@systemplus.fr
Europe Sales OfficeLizzie LEVENEZFrankfurt am MainGERMANY+49 151 23 54 41 82llevenez@systemplus.fr
America Sales OfficeSteve LAFERRIEREPhoenixUSAlaferriere@yole.fr
www.systemplus.fr
Asia Sales OfficeTakashi ONOZAWATokyoJAPANonozawa@yole.fr
Mavis WANGGREATER CHINAwang@yole.fr
NANTESHeadquarter
FRANKFURT/MAINEuropa Sales Office
LYONYOLE HQ
TOKYOYOLE KK
GREATER CHINAYOLE
PHOENIXYOLE Inc.
KOREAYOLE
top related