ibm65 & tsmc65 characterization and comparison with ibm90
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IBM65 & TSMC65 Characterization and Comparison with IBM90
Preeti Mulage
01/27/2010
CKY Group
FO-4 Delay
Current Density
TT
FF
SS
• IBM 90 : ~ 24 % Variation
• IBM 65 : ~ 19-24 % Variation
• TSMC 65 : ~ 22-28 % Variation
Ion/Ioff vs Length
0
100
200
300
400
500
600
700
50 150 250 350 450
Length (nm)Io
n/Io
ff (
x1
0^
3)
IBM65
IBM90
TSMC65
Ion/Ioff at the TT Corner
Ion/Ioff vs Length
0
50
100
150
200
250
300
350
400
450
50 150 250 350 450
Length (nm)
Ion
/Ioff
(x
10
^3
)
IBM65
IBM90
TSMC65
NFET PFET
Vth vs. LengthTSMC65 ~ 17% VariationIBM65 ~ 23% Variation
NFET
PFET
Ron Values
gm vs. Vgs
IBM : 7% Variation TSMC : 3-8% Variation
gmro vs. Vgs at TT• W/L ratio maintained constant over the two technologies
TSMC65IBM65
gmro vs. Vgs at FF
TSMC65IBM65
gmro vs. Vgs at SS
TSMC65 ~ 25% VariationIBM65 ~ 20% Variation
Energy and Delay Capacitances
Gate Leakage vs. Vds
Vmin in IBM65
13
14
Vmin in TSMC65
Emin Comparison
15
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