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October 2013
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com1
FDP55N06 / FDPF55N06N-Channel UniFETTM MOSFET60 V, 55 A, 22 mΩ
Features• RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A
• Low Gate Charge ( Typ. 30 nC)
• Low Crss ( Typ. 60 pF)
• 100% Avalanche Tested
DescriptionUniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
TO-220GDS TO-220F
GDS
G
S
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FDP55N06 FDPF55N06 UnitVDSS Drain-Source Voltage 60 VID Drain Current - Continuous (TC = 25°C) 55 55 * A
- Continuous (TC = 100°C) 34.8 34.8 * AIDM Drain Current - Pulsed (Note 1) 220 220 * AVGSS Gate-Source Voltage ± 25 VEAS Single Pulsed Avalanche Energy (Note 2) 480 mJIAR Avalanche Current (Note 1) 55 AEAR Repetitive Avalanche Energy (Note 1) 11.4 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 114 48 W
- Derate above 25°C 0.9 0.4 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
300 °C
Symbol Parameter FDP55N06 FDPF55N06 UnitRθJC Thermal Resistance, Junction-to-Case, Max. 1.1 2.58 °C/WRθJS Thermal Resistance, Case-to-Sink, Typ. 0.5 -- °C/WRθJA Thermal Resistance, Junction-to-Ambient, Max, 62.5 62.5 °C/W
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com2
Package Marking and Ordering InformationDevice Marking Device Package Reel Size Tape Width Quantity
FDP55N06 FDP55N06 TO-220 Tube N/A 50 unitsFDPF55N06 FDPF55N06 TO-220F Tube N/A 50 units
Electrical Characteristics TC = 25°C unless otherwise notedSymbol Parameter Test Conditions Min Typ Max UnitsOff Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V
∆BVDSS / ∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source On-Resistance
VGS = 10 V, ID = 27.5 A -- 0.018 0.022 Ω
gFS Forward Transconductance VDS = 25 V, ID = 27.5 A -- 33 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1160 1510 pF
Coss Output Capacitance -- 375 490 pF
Crss Reverse Transfer Capacitance -- 60 90 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 30 V, ID = 55 A,RG = 25 Ω
(Note 4)
-- 30 65 ns
tr Turn-On Rise Time -- 130 265 ns
td(off) Turn-Off Delay Time -- 70 150 ns
tf Turn-Off Fall Time -- 95 195 ns
Qg Total Gate Charge VDS = 48 V, ID = 55A,VGS = 10 V
(Note 4)
-- 30 37 nC
Qgs Gate-Source Charge -- 6.5 -- nC
Qgd Gate-Drain Charge -- 7.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 55 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 55 A,dIF / dt = 100 A/µs
-- 40 -- ns
Qrr Reverse Recovery Charge -- 55 -- µC
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS = 55A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 55A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10-1 0 101100
101
102
VGSTop : 15.0 V
10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Bottom : 4.5 V
* Notes : 1. 250µs Pulse Test 2. TC = 25
oC
I D, D
rain
Cur
rent
[A]
10
VDS, Drain-Source Voltage [V]2 64 10
100
101
102
150oC
25oC-55oC
* otes :1. VDS = 30V2. 250µs Pulse Test
I D, D
rain
Cur
rent
[A]
4
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0 25 50 75 100 125 150 175 200
0.02
0.03
0.04
0.05
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RD
S(O
N) [
O],
Dra
in-S
ourc
e O
n-R
esis
tanc
e
ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
100
101
102
150oC
* Notes :1. VGS = 0V2. 250µs Pulse Test
25oC
I DR, R
ever
se D
rain
Cur
rent
[A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 0 1010
500
1000
1500
2000
2500Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd
* Note :1. VGS = 0 V2. f = 1 MHzCrss
Coss
Ciss
Cap
acita
nces
[pF]
10
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25 300
2
4
6
8
10
12
VDS = 30V
VDS = 48V
* Note : ID = 55A
VG
S, G
ate-
Sour
ce V
olta
ge [V
]
QG, Total Gate Charge [nC]
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com4
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
* Notes :1. VGS = 0 V2. ID = 250 µA
BV
DSS
, (N
orm
aliz
ed)
Dra
in-S
ourc
e B
reak
dow
n V
olta
ge
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :1. VGS = 10 V2. ID = 27.5 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Areafor FDP55N06 for FDPF55N06
100 101 10210-2
10-1
100
101
102
103
1 ms
10 µs
DC10 ms
100 µs
Operation in This Area is Limited by R DS(on)
* Notes :1. TC = 25
oC
2. TJ = 150 oC
3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]100 101 102
10-2
10-1
100
101
102
103
100 ms
1 ms
10 µs
DC
10 ms
100 µs
Operation in This Area is Limited by R DS(on)
* Notes : 1. TC = 25
oC
2. TJ = 150 oC
3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
25 50 75 100 125 1500
10
20
30
40
50
60
I D, D
rain
Cur
rent
[A]
TC, Case Temperature [oC]
Typical Performance Characteristics (Continued)
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com5
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
t1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
10-5 10-4 10-3 10-2 10-1 100 101
10-2
10-1
100
* Notes : 1. Z? JC(t) = 1.1
oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
10-5 10-4 10-3 10-2 10-1 100 101
10-2
10-1
100
* Notes : 1. Z? JC(t) = 2.58
oC /W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Z? JC(t)single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t1, Square W ave Pulse Duration [sec]
Z JC
(t), T
herm
al R
espo
nse
[oC
/W]
Z JC
(t), T
herm
al R
espo
nse
[oC
/W]
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com6
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDSRL
DUT
RGVGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDSRL
DUT
RGVGS
VGS
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
EAS = L IAS2----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
I D
t p
EAS = L IAS2----21EAS = L IAS2----21----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
I DI D
t p
VGSVGS
IG = const.
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com7
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD( DUT )
VDS( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD( DUT )
VDS( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------D =Gate Pulse WidthGate Pulse Period
--------------------------
-
Mechanical Dimensions
Dimension in Millimeters
TO-220 3L
Figure 16. TO-220, Molded, 3Lead, Jedec Variation ABPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com8
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com9
Mechanical Dimensions
Dimension in Millimeters
TO-220F 3L
Figure 17. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
-
FDP55N
06 / FDPF55N
06 — N
-Channel U
niFETTM M
OSFET
©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com10
TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®Dual Cool™EcoSPARK®EfficentMax™ESBC™
Fairchild®Fairchild Semiconductor®FACT Quiet Series™FACT®FAST®FastvCore™FETBench™FPS™
F-PFS™FRFET®Global Power ResourceSMGreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®OPTOPLANAR®
PowerTrench®PowerXS™Programmable Active Droop™QFET®QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®STEALTH™SuperFET®SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®SyncFET™
Sync-Lock™®*
TinyBoost®TinyBuck®TinyCalc™TinyLogic®TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™
UHC®Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I66
tm
®
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