fdp55n06 fdp55n06 / fdpf55n06mosfet ©2005 fairchild semiconductor corporation fdp55n06 / fdpf55n06...

October 2013

FDP55N

06 / FDPF55N

06 — N

-Channel U

niFETTM M

OSFET

©2005 Fairchild Semiconductor Corporation FDP55N06 / FDPF55N06 Rev. C0

www.fairchildsemi.com1

FDP55N06 / FDPF55N06N-Channel UniFETTM MOSFET60 V, 55 A, 22 mΩ

Features• RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A

• Low Gate Charge ( Typ. 30 nC)

• Low Crss ( Typ. 60 pF)

• 100% Avalanche Tested

DescriptionUniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

TO-220GDS TO-220F

GDS

G

S

D

Absolute Maximum Ratings TC = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol Parameter FDP55N06 FDPF55N06 UnitVDSS Drain-Source Voltage 60 VID Drain Current - Continuous (TC = 25°C) 55 55 * A

- Continuous (TC = 100°C) 34.8 34.8 * AIDM Drain Current - Pulsed (Note 1) 220 220 * AVGSS Gate-Source Voltage ± 25 VEAS Single Pulsed Avalanche Energy (Note 2) 480 mJIAR Avalanche Current (Note 1) 55 AEAR Repetitive Avalanche Energy (Note 1) 11.4 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 114 48 W

- Derate above 25°C 0.9 0.4 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Symbol Parameter FDP55N06 FDPF55N06 UnitRθJC Thermal Resistance, Junction-to-Case, Max. 1.1 2.58 °C/WRθJS Thermal Resistance, Case-to-Sink, Typ. 0.5 -- °C/WRθJA Thermal Resistance, Junction-to-Ambient, Max, 62.5 62.5 °C/W

FDP55N

06 / FDPF55N

06 — N

-Channel U

niFETTM M

OSFET



Package Marking and Ordering InformationDevice Marking Device Package Reel Size Tape Width Quantity

FDP55N06 FDP55N06 TO-220 Tube N/A 50 unitsFDPF55N06 FDPF55N06 TO-220F Tube N/A 50 units

Electrical Characteristics TC = 25°C unless otherwise notedSymbol Parameter Test Conditions Min Typ Max UnitsOff Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V

∆BVDSS / ∆TJ

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA

VDS = 48 V, TC = 150°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V

RDS(on) Static Drain-Source On-Resistance

VGS = 10 V, ID = 27.5 A -- 0.018 0.022 Ω

gFS Forward Transconductance VDS = 25 V, ID = 27.5 A -- 33 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz

-- 1160 1510 pF

Coss Output Capacitance -- 375 490 pF

Crss Reverse Transfer Capacitance -- 60 90 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 30 V, ID = 55 A,RG = 25 Ω

(Note 4)

-- 30 65 ns

tr Turn-On Rise Time -- 130 265 ns

td(off) Turn-Off Delay Time -- 70 150 ns

tf Turn-Off Fall Time -- 95 195 ns

Qg Total Gate Charge VDS = 48 V, ID = 55A,VGS = 10 V

(Note 4)

-- 30 37 nC

Qgs Gate-Source Charge -- 6.5 -- nC

Qgd Gate-Drain Charge -- 7.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 55 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 55 A,dIF / dt = 100 A/µs

-- 40 -- ns

Qrr Reverse Recovery Charge -- 55 -- µC

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 5.6mH, IAS = 55A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 55A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially independent of operating temperature

FDP55N

06 / FDPF55N

06 — N

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niFETTM M

OSFET



Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10-1 0 101100

101

102

VGSTop : 15.0 V

10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V

Bottom : 4.5 V

* Notes : 1. 250µs Pulse Test 2. TC = 25

oC

I D, D

rain

Cur

rent

[A]

10

VDS, Drain-Source Voltage [V]2 64 10

100

101

102

150oC

25oC-55oC

* otes :1. VDS = 30V2. 250µs Pulse Test

I D, D

rain

Cur

rent

[A]

4

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0 25 50 75 100 125 150 175 200

0.02

0.03

0.04

0.05

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

RD

S(O

N) [

O],

Dra

in-S

ourc

e O

n-R

esis

tanc

e

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

100

101

102

150oC

* Notes :1. VGS = 0V2. 250µs Pulse Test

25oC

I DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 0 1010

500

1000

1500

2000

2500Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

* Note :1. VGS = 0 V2. f = 1 MHzCrss

Coss

Ciss

Cap

acita

nces

[pF]

10

VDS, Drain-Source Voltage [V]

0 5 10 15 20 25 300

2

4

6

8

10

12

VDS = 30V

VDS = 48V

* Note : ID = 55A

VG

S, G

ate-

Sour

ce V

olta

ge [V

]

QG, Total Gate Charge [nC]

FDP55N

06 / FDPF55N

06 — N

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niFETTM M

OSFET



Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

* Notes :1. VGS = 0 V2. ID = 250 µA

BV

DSS

, (N

orm

aliz

ed)

Dra

in-S

ourc

e B

reak

dow

n V

olta

ge

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :1. VGS = 10 V2. ID = 27.5 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Areafor FDP55N06 for FDPF55N06

100 101 10210-2

10-1

100

101

102

103

1 ms

10 µs

DC10 ms

100 µs

Operation in This Area is Limited by R DS(on)

* Notes :1. TC = 25

oC

2. TJ = 150 oC

3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]100 101 102

10-2

10-1

100

101

102

103

100 ms

1 ms

10 µs

DC

10 ms

100 µs

Operation in This Area is Limited by R DS(on)

* Notes : 1. TC = 25

oC

2. TJ = 150 oC

3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current vs. Case Temperature

25 50 75 100 125 1500

10

20

30

40

50

60

I D, D

rain

Cur

rent

[A]

TC, Case Temperature [oC]

Typical Performance Characteristics (Continued)

FDP55N

06 / FDPF55N

06 — N

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niFETTM M

OSFET



Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FDP55N06

t1, Square W ave Pulse Duration [sec]

Figure 11-2. Transient Thermal Response Curve for FDPF55N06

10-5 10-4 10-3 10-2 10-1 100 101

10-2

10-1

100

* Notes : 1. Z? JC(t) = 1.1

oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

10-5 10-4 10-3 10-2 10-1 100 101

10-2

10-1

100

* Notes : 1. Z? JC(t) = 2.58

oC /W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Z? JC(t)single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t1, Square W ave Pulse Duration [sec]

Z JC

(t), T

herm

al R

espo

nse

[oC

/W]

Z JC

(t), T

herm

al R

espo

nse

[oC

/W]

FDP55N

06 / FDPF55N

06 — N

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niFETTM M

OSFET



Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

EAS = L IAS2----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----21EAS = L IAS2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

IG = const.

FDP55N

06 / FDPF55N

06 — N

-Channel U

niFETTM M

OSFET



Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

Mechanical Dimensions

Dimension in Millimeters

TO-220 3L

Figure 16. TO-220, Molded, 3Lead, Jedec Variation ABPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003

FDP55N

06 / FDPF55N

06 — N

-Channel U

niFETTM M

OSFET



FDP55N

06 / FDPF55N

06 — N

-Channel U

niFETTM M

OSFET



Mechanical Dimensions

Dimension in Millimeters

TO-220F 3L

Figure 17. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

FDP55N

06 / FDPF55N

06 — N

-Channel U

niFETTM M

OSFET



TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®Dual Cool™EcoSPARK®EfficentMax™ESBC™

Fairchild®Fairchild Semiconductor®FACT Quiet Series™FACT®FAST®FastvCore™FETBench™FPS™

F-PFS™FRFET®Global Power ResourceSMGreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®OPTOPLANAR®

PowerTrench®PowerXS™Programmable Active Droop™QFET®QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®STEALTH™SuperFET®SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®TinyCalc™TinyLogic®TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

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