dff7n60
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Thermal Characteristics
Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current(@TC = 25°C) * 7.4 AContinuous Drain Current(@TC = 100°C) * 4.6 A
IDM Drain Current Pulsed (Note 1) 30 A
VGS Gate to Source Voltage ±30 V
E AS Single Pulsed Avalanche Energy (Note 2) 560 mJ
E AR Repetitive Avalanche Energy (Note 1) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD
Total Power Dissipation(@TC = 25 °C) 48 W
Derating Factor above 25 °C 0.38 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TLMaximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.300 °C
DFF7N
Apr., 2008. Rev. 2. 1/7
Features High ruggedness
RDS(on) (Max 1.0 )@VGS=10V
Gate Charge (Typical 48nC)
Improved dv/dt Capability
100% Avalanche Tested
N-Channel MOSFET
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
N-Channel MOSFET
2. Drain
3. Source
1. GateRDS(ON) = 1.0 ohm
ID = 7.4A
BVDSS = 600V
General Description
This N-channel enhancement mode field-effect power transistor
using D& I semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F( Isolated ) pkg is well
suited for adaptor power unit and small power inverter application.
TO-220F
Absolute Max imum Ratings
Symbol Parameter Value
UnitsMin. Typ. Max.
RθJC Thermal Resistance, Junction-to-Case - 2.6 °C/W
RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W
* Ensure that the channel temperature does not exceed 150°C
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Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 600 - - V
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficientID = 250uA, referenced to 25 °C - 0.68 - V/°C
IDSS Drain-Source Leakage CurrentVDS = 600V, VGS = 0V - - 10 uA
VDS = 480V, TC = 125 °C - - 100 uA
IGSS
Gate-Source Leakage, Forward VGS = 30V, VDS = 0V - - 100 nA
Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V
RDS(ON)Static Drain-Source On-state Resis-
tanceVGS =10 V, ID = 4.5A - 0.85 1
Dynamic Characteristics
Ciss Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
- 820 980
pFCoss Output Capacitance - 140 170
Crss Reverse Transfer Capacitance - 43 50
Dynamic Characteristics
td(on) Turn-on Delay Time
VDD =300V, ID =7.4A, RG =25Ω
see fig. 13. (Note 4, 5)
- 32 70
ns
tr Rise Time - 85 160
td(off) Turn-off Delay Time - 70 145
tf Fall Time - 65 120
Qg Total Gate Charge
VDS =480V, VGS =10V, ID =7.4A
see fig. 12. (Note 4, 5)
- 48 55
nCQgs Gate-Source Charge - 6.8 -
Qgd Gate-Drain Charge(Miller Charge) - 25 -
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Continuous Source Current Integral Reverse p-n Junction
Diode in the MOSFET
- - 7.4
AISM Pulsed Source Current - - 30
VSD Diode Forward Voltage IS =7.4.0A, VGS =0V - - 1.4 V
trr Reverse Recovery Time
IS=7.4A, VGS=0V, dIF/dt=100A/us
- 400 - ns
Qrr Reverse Recovery Charge - 2.9 - uC
DFF7N
NOTES1. Repeativity rating : pulse width limited by junction temperature
2. L = 22.3mH, I AS =7.40A, VDD = 50V, RG = 50 , Starting TJ = 25°C
3. ISD ≤ 7.4A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%5. Essentially independent of operating temperature.
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0 5 10 15 20 250.0
0.5
1.0
1.5
2.0
2.5
VGS
= 20V
VGS
= 10V
Note : T※J = 25
R D S ( O N ) ,
D r a
i n - S o u r c e
O n
- R e s
i s t a n c e
[ Ω
]
ID, Drain Current [A]
10-1
100
101
10-1
100
101
Notes :※
1. 250μ s Pulse Test
2. TC = 25
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
I D ,
D r a
i n C u r r e n
t [ A ]
VDS
, Drain-Source Voltage [V]
0 10 20 30 40 500
2
4
6
8
10
12
VDS
= 120V
V G S ,
G a
t e - S o u r c e V
o l t a g e
[ V ]
VDS
= 300V
VDS
= 480V
Note : I※D = 7.4 A
QG, Total Gate Charge [nC]
0 5 10 15 20 25 30 35 400
250
500
750
1000
Ciss
=Cgs
+Cgd
(Cds
=shorted)
Coss
=Cds
+Cgd
Crss
=Cgd
Notes :※
1. VGS = 0V 2. f=1MHz
Ciss
Coss
Crss
C a p a c
i t a n c e
[ p F ]
VDS
, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.210
-1
100
101
150
Notes :※
1. VGS
= 0V
2. 250μ s Pulse Test
25
I D R ,
R e v e r s e
D r a
i n C u r r e n
t [ A ]
VSD
, Source-Drain voltage [V]
2 3 4 5 6 7 8 9 1010
-1
100
101
150oC
25oC
-55oC
Notes :※
1. VDS
= 50V
2. 250μ s Pulse Test
I D ,
D r a
i n C u r r e n
t [ A ]
VGS
, Gate-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristic s
Fig 1. On-State Characteristics Fig 2. Transfer Characteristics
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
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25 50 75 100 125 1500
2
4
6
8
TC' Case Temperature [
oC]
I D '
D r a
i n C
u r r e n
t [ A ]
10-5
10-4
10-3
10-2
10-1
100
101
10-2
10-1
10
0
Notes :※
1. Zθ JC
( t ) = 2 .6 /W Max.
2 . Duty Factor , D=t1/t
2
3. TJM
- TC = P
DM * Z
θ JC(t)
single pulse
D=0.5
0.02
0. 2
0.05
0. 1
0.01
Z θ
J C
( t ) , T h e r m a
l R e s p o n s
e
t1, Square W ave Pulse Durat ion [sec]
100
101
102
103
10-2
10-1
100
101
102
DC
10 ms
1 ms
100 μs
Operation in This Area
is Limited by RDS(on)
Notes :※
1. TC = 25
oC
2. TJ = 150
oC
3. Single Pulse
I D ,
D r a
i n C u
r r e n
t [ A ]
VDS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. VGS
= 10 V
2. ID = 3.7 A
R D S ( o n
) , ( N o r m a
l i z e
d )
D r a
i n - S o u r c e
O n - R e s
i s t a n c e
TJ, Junction Temperature [
oC]
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
Notes :※ 1. V
GS = 0 V
2. ID = 250μ A
B V
D S S ,
( N o r m a
l i z e
d )
D r a
i n - S o u r c e
B r e a
k d o w n
V o
l t a g e
TJ, Junction Temperature [
oC]
Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 7. Breakdown Voltage Variation
vs. Junct ion Temperature
Fig 8. On-Resistance Variation
vs. Junct ion Temperature
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Fig 11. Transient Thermal Response Curve
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Fig 13. Switching Time Test Circuit & Waveforms
Fig 14. Unclamped Induct ive Switching Test Circuit & Waveforms
Fig. 12. Gate Charge Test Circuit & Waveforms
12V 200nF 50KO
300nF
VGS
1mA
Same Type
as DUT
DUT
VDS
VGS
Charge
Qg
Qgs Qgd
Pulse
Generator
10VRG
VDS
RL
VDD
(0.5 rated VDS)
DUT
VDS
Vin
90%
10%
td(on) tr td(off) tf
ton toff
Time
10V
VDS
RG
VDS(t)DUT
BVDSS
L
ID
VDD
ID(t)
I AS
E AS = LL I AS2
BVDSS
BVDSS - VDD
1
2
tp
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DFF7N
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
• IS controlled by pulse period
VDD
LL
IS
IS
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
10V
VGS
( Driver )
I S
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Vf
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period
--------------------------
10V
VGS
( Driver )
I S
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Vf
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period
--------------------------D =Gate Pulse Width
Gate Pulse Period
--------------------------
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TO-220F Package Dimension
3.154.553.3515.43.0413.287.956.10Max
3.104.503.2515.23.0213.087.906.05Typ.
3.054.453.1515.03.0012.887.856.00Min
mm
HGFEDCB ADIMENSION
3.154.553.3515.43.0413.287.956.10Max
3.104.503.2515.23.0213.087.906.05Typ.
3.054.453.1515.03.0012.887.856.00Min
mm
HGFEDCB ADIMENSION
3.004.622.101.6710.051.2550.605Max
2.954.602.051.6610.001.2500.595Typ.
2.904.582.001.659.951.2450.585Min
mm
ØNMLKJIDIMENSION
3.004.622.101.6710.051.2550.605Max
2.954.602.051.6610.001.2500.595Typ.
2.904.582.001.659.951.2450.585Min
mm
ØNMLKJIDIMENSION
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