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Thermal Characteristics

Symbol Parameter Value Units

VDSS Drain to Source Voltage 600 V

ID Continuous Drain Current(@TC = 25°C) * 7.4 AContinuous Drain Current(@TC = 100°C) * 4.6 A

IDM Drain Current Pulsed (Note 1) 30 A

VGS Gate to Source Voltage ±30 V

E AS Single Pulsed Avalanche Energy (Note 2) 560 mJ

E AR Repetitive Avalanche Energy (Note 1) 4.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD

Total Power Dissipation(@TC = 25 °C) 48 W

Derating Factor above 25 °C 0.38 W/°C

TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C

TLMaximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.300 °C

DFF7N

Apr., 2008. Rev. 2. 1/7

Features High ruggedness

RDS(on) (Max 1.0 )@VGS=10V

Gate Charge (Typical 48nC)

Improved dv/dt Capability

100% Avalanche Tested

N-Channel MOSFET

Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.

N-Channel MOSFET

2. Drain

3. Source

1. GateRDS(ON) = 1.0 ohm

ID = 7.4A

BVDSS = 600V

General Description

This N-channel enhancement mode field-effect power transistor

using D& I semiconductor’s advanced planar stripe, DMOS technol-

ogy intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged

avalanche characteristics. The TO-220F( Isolated ) pkg is well

suited for adaptor power unit and small power inverter application.

TO-220F

Absolute Max imum Ratings

Symbol Parameter Value

UnitsMin. Typ. Max.

RθJC Thermal Resistance, Junction-to-Case - 2.6 °C/W

RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W

* Ensure that the channel temperature does not exceed 150°C

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Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 600 - - V

Δ BVDSS/

Δ TJ

Breakdown Voltage Temperature

coefficientID = 250uA, referenced to 25 °C - 0.68 - V/°C

IDSS Drain-Source Leakage CurrentVDS = 600V, VGS = 0V - - 10 uA

VDS = 480V, TC = 125 °C - - 100 uA

IGSS

Gate-Source Leakage, Forward VGS = 30V, VDS = 0V - - 100 nA

Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V

RDS(ON)Static Drain-Source On-state Resis-

tanceVGS =10 V, ID = 4.5A - 0.85 1

Dynamic Characteristics

Ciss Input Capacitance

VGS =0 V, VDS =25V, f = 1MHz

- 820 980

pFCoss Output Capacitance - 140 170

Crss Reverse Transfer Capacitance - 43 50

Dynamic Characteristics

td(on) Turn-on Delay Time

VDD =300V, ID =7.4A, RG =25Ω

see fig. 13. (Note 4, 5)

- 32 70

ns

tr Rise Time - 85 160

td(off) Turn-off Delay Time - 70 145

tf Fall Time - 65 120

Qg Total Gate Charge

VDS =480V, VGS =10V, ID =7.4A

see fig. 12. (Note 4, 5)

- 48 55

nCQgs Gate-Source Charge - 6.8 -

Qgd Gate-Drain Charge(Miller Charge) - 25 -

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit.

IS Continuous Source Current Integral Reverse p-n Junction

Diode in the MOSFET

- - 7.4

AISM Pulsed Source Current - - 30

VSD Diode Forward Voltage IS =7.4.0A, VGS =0V - - 1.4 V

trr Reverse Recovery Time

IS=7.4A, VGS=0V, dIF/dt=100A/us

- 400 - ns

Qrr Reverse Recovery Charge - 2.9 - uC

DFF7N

NOTES1. Repeativity rating : pulse width limited by junction temperature

2. L = 22.3mH, I AS =7.40A, VDD = 50V, RG = 50 , Starting TJ = 25°C

3. ISD ≤ 7.4A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%5. Essentially independent of operating temperature.

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0 5 10 15 20 250.0

0.5

1.0

1.5

2.0

2.5

VGS

= 20V

VGS

= 10V

Note : T※J = 25

R D S ( O N ) ,

D r a

i n - S o u r c e

O n

- R e s

i s t a n c e

[ Ω

]

ID, Drain Current [A]

10-1

100

101

10-1

100

101

Notes :※

1. 250μ s Pulse Test

2. TC = 25

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

I D ,

D r a

i n C u r r e n

t [ A ]

VDS

, Drain-Source Voltage [V]

0 10 20 30 40 500

2

4

6

8

10

12

VDS

= 120V

V G S ,

G a

t e - S o u r c e V

o l t a g e

[ V ]

VDS

= 300V

VDS

= 480V

Note : I※D = 7.4 A

QG, Total Gate Charge [nC]

0 5 10 15 20 25 30 35 400

250

500

750

1000

Ciss

=Cgs

+Cgd

(Cds

=shorted)

Coss

=Cds

+Cgd

Crss

=Cgd

Notes :※

1. VGS = 0V 2. f=1MHz

Ciss

Coss

Crss

C a p a c

i t a n c e

[ p F ]

VDS


0.2 0.4 0.6 0.8 1.0 1.210

-1

100

101

150

Notes :※

1. VGS

= 0V


25

I D R ,

R e v e r s e

D r a

i n C u r r e n

t [ A ]

VSD

, Source-Drain voltage [V]

2 3 4 5 6 7 8 9 1010

-1

100

101

150oC

25oC

-55oC

Notes :※

1. VDS

= 50V


I D ,

D r a

i n C u r r e n

t [ A ]

VGS

, Gate-Source Voltage [V]

Fig 4. On State Current vs.

Allowable Case Temperature

Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristic s

Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

Fig 3. On Resistance Variation vs.

Drain Current and Gate Voltage

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25 50 75 100 125 1500

2

4

6

8

TC' Case Temperature [

oC]

I D '

D r a

i n C

u r r e n

t [ A ]

10-5

10-4

10-3

10-2

10-1

100

101

10-2

10-1

10

0

Notes :※

1. Zθ JC

( t ) = 2 .6 /W Max.

2 . Duty Factor , D=t1/t

2

3. TJM

- TC = P

DM * Z

θ JC(t)

single pulse

D=0.5

0.02

0. 2

0.05

0. 1

0.01

Z θ

J C

( t ) , T h e r m a

l R e s p o n s

e

t1, Square W ave Pulse Durat ion [sec]

100

101

102

103

10-2

10-1

100

101

102

DC

10 ms

1 ms

100 μs

Operation in This Area

is Limited by RDS(on)

Notes :※

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

I D ,

D r a

i n C u

r r e n

t [ A ]

VDS


-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※

1. VGS

= 10 V

2. ID = 3.7 A

R D S ( o n

) , ( N o r m a

l i z e

d )

D r a

i n - S o u r c e

O n - R e s

i s t a n c e

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :※ 1. V

GS = 0 V

2. ID = 250μ A

B V

D S S ,

( N o r m a

l i z e

d )

D r a

i n - S o u r c e

B r e a

k d o w n

V o

l t a g e

TJ, Junction Temperature [

oC]

Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current

vs. Case Temperature

Fig 7. Breakdown Voltage Variation

vs. Junct ion Temperature

Fig 8. On-Resistance Variation

vs. Junct ion Temperature

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Fig 11. Transient Thermal Response Curve

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Fig 13. Switching Time Test Circuit & Waveforms

Fig 14. Unclamped Induct ive Switching Test Circuit & Waveforms

Fig. 12. Gate Charge Test Circuit & Waveforms

12V 200nF 50KO

300nF

VGS

1mA

Same Type

as DUT

DUT

VDS

VGS

Charge

Qg

Qgs Qgd

Pulse

Generator

10VRG

VDS

RL

VDD

(0.5 rated VDS)

DUT

VDS

Vin

90%

10%

td(on) tr td(off) tf

ton toff

Time

10V

VDS

RG

VDS(t)DUT

BVDSS

L

ID

VDD

ID(t)

I AS

E AS = LL I AS2

BVDSS

BVDSS - VDD

1

2

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DFF7N

DUT

VDS

+

_

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

• IS controlled by pulse period

VDD

LL

IS

IS

Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

10V

VGS

( Driver )

I S

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

Vf

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period

--------------------------

10V

VGS

( Driver )

I S

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

Vf

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period

--------------------------D =Gate Pulse Width

Gate Pulse Period

--------------------------

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TO-220F Package Dimension

3.154.553.3515.43.0413.287.956.10Max

3.104.503.2515.23.0213.087.906.05Typ.

3.054.453.1515.03.0012.887.856.00Min

mm

HGFEDCB ADIMENSION

3.154.553.3515.43.0413.287.956.10Max

3.104.503.2515.23.0213.087.906.05Typ.

3.054.453.1515.03.0012.887.856.00Min

mm

HGFEDCB ADIMENSION

3.004.622.101.6710.051.2550.605Max

2.954.602.051.6610.001.2500.595Typ.

2.904.582.001.659.951.2450.585Min

mm

ØNMLKJIDIMENSION

3.004.622.101.6710.051.2550.605Max

2.954.602.051.6610.001.2500.595Typ.

2.904.582.001.659.951.2450.585Min

mm

ØNMLKJIDIMENSION

dff7n60

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