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Dry-Film Developments for LDI - Technology
9/3/2009 DUPONT CONFIDENTIAL
Russell CrockettCircuit Packaging Materials.DuPont Electronic Technologies
Advanced Manufacturing Techniques.Rotherham 4 August. 2009
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Laser Direct Imaging forPrinted Circuit Manufacture.
Why Use LDI to expose a dry film resist?
Is it an Enabling Technology?• Improve production capabilities
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• Improve production capabilities
Does it Improve Yields?
• Reduce costs
3
Laser Direct Imaging forPrinted Circuit Manufacture.
The 5 Steps to Create the Image.•Surface Preparation.•Resist Lamination.
•Resist Exposure.LDI step.
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p p•Resist Development.
•Circuit Creation.• Etching.• Plating.
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Laser Direct Imaging forPrinted Circuit Manufacture.
The main Users of LDI Equipment.
•Prototype Market - Enabling Technology.• Speed to production. No phototool preparation.
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• Flexability. Single board production.
•HDI Market – Yield Improvement.• Side to side, layer to layer registration.
• Large panel registration to micro vias.
• Reduced repeat fault ( dirt ) imaging for fine line.
• Better quality and lower total cost.
5
LDI History
Nikon PentaxDI-2000
Dai-NihonScreen
OrbotechDP-100Polyscan
PDI-2000
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UV Laser out put360nm * 350 - 365nm
405nm * 400 - 415nm
1990 1995 2000
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LDI Technology 355nm vs. 405nm
Laser
PolygonMirror
DMD
Laser
Wave Length:355nm Wave Length:405nm
Polygon Mirror System DMD (Digital Micro Mirror Devise) System
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Mirror
Panel
Feed direction
Panel
Feed direction
Scandirection
Polygon Mirror 305nmOrbotech
DMD. Digital Micro-mirror Devise 405nm
Fuji Pentax (ORC) Hitachi
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Polygon Optical System source: ORBOTECH
UV LaserPolygonBeam
S litt
AOM
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Lens SystemSplitter
Stage movement during imaging
Panel
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DMD 405nm LDI system
Exposure
CAD data
Optical system
Light Lens
ON
DMD
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Panel feed direction
Direct imaging
Optical head
DMD (Digital Micro mirror Device)
消光板
OFF
Imaging
Focus Lens
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Laser technology and Resist evolution.•
Polygon Plotters ( DP 100 )• Low energy
• Productivity gated by photospeed, ~ 10mJ
Dry film resists( LDI 300, 500 Series )V hi h h t d
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• Very high photospeed, • 8 - 10mJ 30micron resist• 15 – 18mJ 50micron resist
Trade off• Unstable to heat and yellow light.• Poor processing productivity, development, stripping.• Brittle, poor tenting.
Conventional resist 60 – 75mJ
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LDI History
Nikon PentaxDI-2000
Dai-NihonScreen
OrbotechDP-100Polyscan
PDI-2000
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1990 1995 2000
LDI 200
LDI 500
LDI 300
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LDI 500 series dry-film 405nm + 355nm
LDI540 @ 405nm LDI540 @ 355nm
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LDI 500 series dry-film 405nm + 355nm
LDI540 @ 405nm LDI540 @ 355nm25 – 28 mJ/cm2 14 – 16 mJ/cm2
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LDI Dry-Film Developments
Nikon PentaxDI-2000
Dai-NihonScreen LI-7000
OrbotechDP-100Polyscan
PDI-2000
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1990 1995 2000
LDI 200
LDI 500
LDI 300
LDI 800
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Laser technology and Resist evolution.
•
Digital Micro Mirror Device, LDI plotter
• High resolution• Smaller panel format
U d i l i A i
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• Used mainly in Asia.• Needed specific photo-initiator at 405nm.
• Not compatible with other dry film photo-initiators.• Not compatible with other exposure equipment.
• Riston* LDI 800 developed specifically for 405nm wave length.
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Laser technology and Resist evolution.•
Polygon Plotters ( Paragon 8000 )• Higher energy
• Productivity gated by photospeed, ~ 18mJ
Dry film resists( LDI 7000 and 7200 Series )Hi h h t d
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• High photospeed, Benifits
• More stable to heat and yellow light.• Improved resolution.• Improved resist flow and adhesion.• Improved processing productivity, development, stripping.• Higher yields.
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LDI Dry-Film continued developments
1990 199 2000
Nikon PentaxDI-2000
Dai-NihonScreen
OrbotechDP-100Polyscan
PDI-2000
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1990 1995 2000
LDI 200
LDI 500
LDI 300
LDI 7000
LDI 800
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Laser Direct Imaging forPrinted Circuit Manufacture.
Why Use LDI to expose a dry film resist?
Is it an Enabling Technology?• Improve production capabilities
9/3/2009 DUPONT CONFIDENTIAL9/3/2009 DUPONT CONFIDENTIAL
• Improve production capabilities
Does it Improve Yields?
• Reduce costs
18
Why Use LDI to expose a dry film resist?
Yield – Imaging Defects, none LDI exposure
708090
100without Repeatswith Repeats
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010203040506070
Yield % opens/nicks
75 50
Feature size ym
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Why Use LDI to expose a dry film resist?
Yield – Imaging Defects, 50ym ( non-repeating )
708090
100
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010203040506070
Yield % Imaging Defects
1 2
LDI Exposure
without Cleaningwith Cleaning
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Why Use LDI to expose a dry film resist?
Yield – Mis-registration Defects (610 x 510mm)
8090
100
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01020304050607080
Yield % Misregistration
Feature size 50ym
Film exposureLDI exposure
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Riston* LDI 7040
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LDI Dry Film Resist RequirementsAll ApplicationsAdhesion to many surface finishesProductivity, all processes.Flow at lamination.Resolution ~ 50ym
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Resolution, ~ 50ymEtching, Acid and AlkalinePlate Cu, Sn, PB,Ni, Au.Tenting, T&E and Plating.Stability, Transport, yellow light.Can be exposed on conventional printers.Highest possible yields.
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LDI Dry Film Resist Requirements
Best in class dry film, plus LDI exposureRiston* LDI 7000 and 7200 series.
Good Adhesion on all surfacesGood Flow - Characteristics
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High ResolutionGood Tenting ( 8mm through 65µm Cu acid etch )High Productivity- fast development- fast and easy stripping
Acid and Alkaline etch.
Plating, Cu, Sn, Pb, Ni, Au.
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LDI 7000,7200, Dry Film Resists
Riston* LDI 7000 and 7200 series.Thicker resists 7250,7262,7275 and 7299
• Optimized for through polymerization.
Cover sheet clarity and quality.
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High resolution capability, sub 50ym. ( resist thickness )
Compatibility with standard exposure equipment.
Production proven high yield performance.• Etching innerlayers.
• Tent and etch.
• Cu & Sn and Ni & Au plating.
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Riston* LDI 7000 / 7200 Series
LDI 7030 16 mJ/cm2
LDI 7040 20 mJ/cm2
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LDI 7250 30 mJ/cm2
Paragon 8000, gate energy 18mJ.
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LDI 7040 - 37 micron L/S
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14 mJ/cm2 20 mJ/cm2
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LDI 7030 LDI 7250
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Riston* LDI 7040
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Riston* LDI 7250
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Riston* LDI 7250
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LDI – Productivity?Paragon + DuPont WBR 2100
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