advanced product / process change notice...the above information is the exclusive intellectual...

The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.

Table No.: 1110-0001-08-A

Advanced Product / Process Change Notice

No.: Z200-APCN-DM201911-01-P Date: November 14, 2019

Change Title : 512Mb (64Mb x8 and 32Mb x16) DDR2 technology migration from 46nm to 25nm

Change Classification: Major Minor with customer notification Minor without customer notification Change item : Design Raw Material Wafer FAB Assembly Testing Packing Others

Affected Product(s) :

Please refer to Table 1 in details.

Description of Change(s) :

Technology migration (46nm to 25nm) for 512Mb DDR2.

Reason for Change(s) :

According to Winbond product roadmap, launch new 512Mb DDR2 with 25nm technology.

Impact of Change(s) : ( positive & negative )

Form : No Change

Fit : Change (Both BGA84 and BGA60 thickness from 1.2 mm (46nm) to 1.0 mm (25 nm) and BGA60 PKG size shrink to 8x9.5 mm^2 .Refer to attachment I in details)

Function : No Concern (Compatible between 46nm and 25nm,refer to attachment II)

Reliability : On-going

Hazardous Substances: No Concern (Please refer to attachment III)

Qualification Plan/ Results :

The new sample has passed ESD pass 2KV, latch-up pass 200mA and full qualification is in progress. The result is expected out on Dec'2019.

Implementation Plan :

The follow-up disposition of 46nm 64Mb x8 and 32Mb x16 DDR2:

1) The date of last-buy orders for the 46nm 64Mb x8 and 32Mb x16 DDR2: May 29, 2020.

2) The last shipment date of the 46nm 64Mb x8 and 32Mb x16 DDR2: August 31, 2020.

Date Code: onward Lot No: onward Proposed first ship date: March 02, 2020

Originator: (QA)

Approval: (QA Dept. Manager)

Approval: (QRA Director)

Contact for Questions & Concerns

Name: Betty Huang TEL:886-3-5678168 (ext.76549) FAX: 886-3-5796124

Address : No. 8,Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881,Taiwan

E-mail: [email protected]


Table No.: 1110-0001-08-A

Customer Comments: Note: Please sign this notice, and return to Winbond contact within 30 days. If no response is received within 30 days, this Change Request will be assumed to meet your approval.

Major change: Approval Disapproval Conditional Approval : .

Minor change with customer notification: Recognition

Minor change without customer notification: Approval Disapproval

Conditional Approval :

Comment:

Date:

Dept. name:

Person in charge:


Table No.: 1110-0001-08-A

Table 1. The affected part no are list below.

W9751G6KB-15 W9751G6KB-25 W9751G6KB25N W9751G6KB-3K W9751G8KB25A

W9751G6KB15I W9751G6KB25A W9751G6KB25W W9751G8KB-18 W9751G8KB25I

W9751G6KB-18 W9751G6KB25I W9751G6KB-3 W9751G8KB18I W9751G8KB-3

W9751G6KB18I W9751G6KB25J W9751G6KB-3A W9751G8KB-25 W9751G8KB-3I

W9751G6KB18K W9751G6KB25K W9751G6KB-3I

Before- 46 nm (K die) x16

Before- 46 nm (K die) x8

After- 25 nm (N die) x16

After- 25 nm (N die) x8

Before-46nm (K die) x16

After-25nm (N die) x16

Before-46nm (K die) x8

After-25nm (N die) x8

The comparison table of part no between 46nm and 25nm

Product 46nm Part No 25nm Part No

DDR2 64Mb x8 W9751G8KB W9751G8NB

DDR2 32Mb x16 W9751G6KB W9751G6NB

*Note: W9751G6KB25L would be eliminated and not migrated to 25nm (N die)

W9751G6NB, W9751G8NB, W975116NG, W975108NG

Publication Release Date:Jan 03, 2020

- 1 - Reliability Engineering Department

PART NO. : W9751G6NB & W9751G8NB W975116NG & W975108NG

FUNCTION : 512M DDR2 SDRAM PROCESS : 25 nm CMOS(SPQM)

RA ENGINEER :

RA MANAGER :

INDUSTRIAL RELIABILITY REPORT

W9751G6NB series & W9751G8NB series

W975116NG series & W975108NG series

W9751G6NB, W9751G8NB, W975116NG, W975108NG

Publication Release Date: Jan 03, 2020


SUMMARY

W9751G6NB , Package type- 84 VFBGA passed industrial grade

temperature (-40~105C) qualification tests according to Winbond`s

product qualification requirement. A summary of the test result is as

follows :

. Pre-condition Test : 0/1500 pcs

. High Temp. Operating Life test : 0/231 pcs

. High Temp. Storage Life Test : 0/231 pcs

. Highly Accelerated Stress Test : 0/231 pcs

. Temperature Cycle Test : 0/231 pcs

. Un-bias Highly Accelerated Stress Test : 0/231 pcs

. ESD-HBM : 0/72 pcs

ESD-CDM : 0/9 pcs

. Latch -Up Test : 0/18 pcs

. EFR : 0/6168 pcs

Results of the life tests and environmental tests as well as the methods used on

W9751G6NB DDR2 SDRAM are described in details in the report.

W9751G6NB, W9751G8NB, W975116NG, W975108NG



---CONTENTS---

Ⅰ. PRODUCT DESCRIPTION

A. Introduction

B. Features

C. Function Block

Ⅱ. LIFE TEST

A. Introduction

1. Pre-condition Test

2. High Temp. Operating Life Test ( HTOL )

3. High Temp. Storage Life Test ( HTSL )

B. Test Results


2. High Temp. Operating Life Test ( HTOL )

3. High Temp. Storage Life Test ( HTSL )

W9751G6NB, W9751G8NB, W975116NG, W975108NG



Ⅲ. ENVIRONMENTAL TEST

A. Introduction

1. Highly Accelerated Stress Testing (HAST)

2. Temperature Cycle Test (TCT)

3. Un-bias Highly Accelerated Stress Test (UHAST)

B. Test Results




Ⅳ. ESD & LATCH-UP

A. Introduction

1. ESD

2. LATCH-UP

B. Test Results

1. ESD

2. LATCH-UP

Ⅴ. Dynamic Early Fail Rate

A. Introduction

1. EFR

B. Test Results

1. EFR

W9751G6NB, W9751G8NB, W975116NG, W975108NG



Ⅰ. PRODUCT DESCRIPTION FEATURES

GENERAL DESCRIPTION

W9751G6NB, W9751G8NB, W975116NG, W975108NG



W9751G6NB, W9751G8NB, W975116NG, W975108NG



Ⅱ. LIFE TEST

A. Introduction


1.1 SCOPE

Pre-condition Test is to measure the resistance of SMD(Surface Mount Devices)

to the storage environment at the customer site and to thermal stress created by

IR reflow or Vapor Phase Reflow.

1.2 TEST CONDITION

Step 1 : TCT(-65C/150C, 5 cycles)

Step 2 : Bake(125C, 24 hours)

Step 3 : Soak(60C/60%RH, 52 hours)

Step 4 : IR ( 260 C ), 3 Passes.

(JEDEC 020)

2. High Temperature Operating Life Test (HTOL)

2.1 SCOPE

HTOL test is performed to accelerate failure mechanisms, which are thermally

activated. This can be achieved by stressing the devices with bias at high

temperature.

All parts must be preconditioned before testing.

2.2 TEST CONDITION

Temp ambient = 125C, Vdd = 1.9V, dynamic stressing, Td = 1000 hrs.

(JEDEC JESD-22-A108)

3. High Temperature Storage Life Test (HTSL)

3.1 SCOPE

HTSL test is to determine the stability of the device in high temperature environment.


3.2 TEST CONDITION

Temp = 150C, Td = 1000 hrs. (JEDEC JESD-22-A103)

W9751G6NB, W9751G8NB, W975116NG, W975108NG



B. Test Results

1. Pre-condtion Test

1.1 SUMMARY TABLE

Run Lot No Result Remark

#1 6915JZ800ZU 0/500 Pass

#2 6915K2500ZX 0/500 Pass

#3 6915K3600ZX 0/500 Pass

*Criteria : Acc/Rej = 0/1.

2. High Temperature Operating Life Test (HTOL)

2.1 SUMMARY TABLE

RUN Lot No 500 Hrs 1000 Hrs Remark

#1 6915JZ800ZU 0/77 0/77 Pass

#2 6915K2500ZX 0/77 0/77 Pass

#3 6915K3600ZX 0/77 0/77 Pass


2.2 FAILURE RATE CALCULATION

F R T

CL N

EDH

X. .( )( , )

21 2 2

2

WHERE 2

X : CHI-SQUARE Function CL : Confidence Level

N : No of Failures EDH : Equivalent Device Hour

Test

Item

Dev. Hours

at Tj=137.3C,

Equiv. Dev.

Hours at Tj=60C,

No. of

Failure

Failure

Rate

at 60C

HTOL 231000 38701119 0 23.68 FIT

Based on CL = 60% and Activation Energy = 0.78 eV

W9751G6NB, W9751G8NB, W975116NG, W975108NG



3. High Temperature Storage Life Test (HTSL)

3.1 SUMMARY TABLE

Run Lot No 500 Hrs 1000 Hrs

Remark

#1 6915JZ800ZU 0/77 0/77 Pass

#2 6915K2500ZX 0/77 0/77 Pass

#3 6915K3600ZX 0/77 0/77 Pass


W9751G6NB, W9751G8NB, W975116NG, W975108NG



III. ENVIRONMENTAL TESTS

A. Introduction


1.1 SCOPE

HAST is to evaluate the reliability of non hermetic packaged solid-state device

in humid environments.


1.2 TEST CONDITION

Ta = 110C, Vdd=1.9V, RH% = 85%, Td = 264 Hrs. (JESD22-A110)


2.1 SCOPE

TCT is to evaluate the resistance of device to environmental temperature change.


2.2 TEST CONDITION

-65C ~ +150 C, condition C, soak mode 1, 500 cycles.

(JEDEC JESD-22-A104)


3.1 SCOPE

UHAST is to evaluate the reliability of BGA package type product’s resistance against high

temperature and high humidity.


3.2 TEST CONDITION

Ta = 130C, RH% = 85%, Td = 96 Hrs. (JESD22-A118)

W9751G6NB, W9751G8NB, W975116NG, W975108NG



B. Test Results


1.1 SUMMARY TABLE

Run Lot No 264 Hrs Remark

#1 6915JZ800ZU 0/77 Pass

#2 6915K2500ZX 0/77 Pass

#3 6915K3600ZX 0/77 Pass



2.1 SUMMARY TABLE

Run Lot No 500 Cycles Remark

#1 6915JZ800ZU 0/77 Pass

#2 6915K2500ZX 0/77 Pass

#3 6915K3600ZX 0/77 Pass



3.1 SUMMARY TABLE

Run Lot No 96 Hrs Remark

#1 6915JZ800ZU 0/77 Pass

#2 6915K2500ZX 0/77 Pass

#3 6915K3600ZX 0/77 Pass


W9751G6NB, W9751G8NB, W975116NG, W975108NG



IV. ESD AND LATCH-UP

A. Introduction

1. ESD

1.1 SCOPE

ESD test is to evaluate the immunity of device to electrostatic discharge.

1.2 TEST CONDITION

Human Body Model (HBM) : JS-001

Charged Device Model (CDM) : JS-002

2. Latch-Up

2.1 SCOPE

Latch-Up test is to evaluate the immunity of the devices to latch-up.

2.2 TEST CONDITION

JEDEC STD 78, Temp = 25 C, VDD = Max. Operating Voltage

B. Test Results

1. ESD

1.1 Human Body Model

Run LOT# POSITIVE NEGATIVE Remark

#1 6915JZ800ZU 0/12 0/12 Pass

#2 6915K2500ZX 0/12 0/12 Pass

#3 6915K3600ZX 0/12 0/12 Pass


*| SPEC | : >2 KV

W9751G6NB, W9751G8NB, W975116NG, W975108NG



1.2 Charged Device Model

Run LOT# POSITIVE/ NEGATIVE Remark

#1 6915JZ800ZU 0/3 Pass

#2 6915K2500ZX 0/3 Pass

#3 6915K3600ZX 0/3 Pass


*| SPEC | : >750V

2. Latch-Up

Run LOT# POSITIVE NEGATIVE Remark

#1 6915JZ800ZU 0/3 0/3 Pass

#2 6915K2500ZX 0/3 0/3 Pass

#3 6915K3600ZX 0/3 0/3 Pass


*| SPEC. | : I-Test > 200mA

Vsupply over voltage Test > 1.5x max supply voltage

W9751G6NB, W9751G8NB, W975116NG, W975108NG



V. EFR

A. Introduction

1. EFR

1.1 SCOPE

The purpose of the dynamic early fail study (EFR) is to determines the reliability

performance in early application time period.

1.2 TEST CONDITION

Temp ambient = 125C, VPPstress=3.5V (VPPnormal=2.8V),

dynamic stressing, Td = 5 hrs.

B. Total Test Results

1.1 SUMMARY

LOT NO Q'ty After EFR stress Remark

6915JZ80003 1982 0/ 1982 Pass

6915JZ80011 1313 0/ 1313 Pass

6915K250001 1125 0/ 1125 Pass

6915K360001 909 0/ 909 Pass

6915K25AW02 839 0/839 Pass

Total 6168 0/6168 Pass

W9751G6NB, W9751G8NB, W975116NG, W975108NG



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