6 25 tga2813-sm
TRANSCRIPT
TGA2813-SM 3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 1 of 15 www.qorvo.com
®
General Description
Qorvo’s TGA2813-SM is a packaged high power S-band
amplifier which operates from 3.1 to 3.6 GHz. The
TGA2813-SM is designed using Qorvo’s QGaN25
0.25-μm GaN on SiC process.
The TGA2813-SM typically provides greater than 100 W of
saturated output power, 56% power-added efficiency, and
24 dB power gain.
The TGA2813-SM is available in a low-cost, surface mount
42 lead 7 x 9 Overmold QFN. It is ideally suited to support
both commercial and defense related radar applications.
Both RF ports have integrated DC blocking capacitors and
are fully matched to 50 ohms.
Lead-free and RoHS compliant
QFN 7 x 9 mm 42 L
Product Features
• Frequency Range: 3.1–3.6 GHz
• POUT: >50 dBm at PIN = 26 dBm
• Power Gain: >24 dB at PIN = 26 dBm
• PAE: >56 % at PIN = 26 dBm
• Bias: VD = 30 V pulsed (PW = 100 µs, DC = 10 %),
IDQ = 300 mA
• Package Dimensions: 7.0 x 9.0 x 1.1 mm
Applications
• Military Radar
• Commercial Radar
Functional Block Diagram
Ordering Information
Part Description
TGA2813-SM 3.1–3.6 GHz, 100 W GaN Power Amplifier
TGA2813-SM_EVB TGA2813-SM Evaluation Board
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TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 2 of 15 www.qorvo.com
®
Absolute Maximum Ratings
Parameter Value/Range
Drain Voltage (VD) 40 V
Gate Voltage Range (VG) −8 to 0 V
Drain Current (ID) 10.4 A
Gate Current (IG) See Graph (page 9)
Power Dissipation (PDISS), 85 °C 202 W
Input Power, CW, 50 Ω, (PIN) 30 dBm
Input Power, CW, VSWR 3:1, VD = 30 V, 85 °C, (PIN)
27 dBm
Mounting Temperature (30 Seconds) 260 °C
Storage Temperature −55 to 150 °C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied
Recommended Operating Conditions
Parameter Value/Range
Drain Voltage (VD) Pulsed: PW = 100 µs, DC = 10 %
30 V
Drain Current (IDQ) 300 mA
Drain Current Under RF Drive (ID_DRIVE) See plots p. 5-7
Gate Voltage Range (VG) −2.8 to −2.0 V
Gate Current Under RF Drive (IG_DRIVE) See plots p. 9
Temperature (TBASE) −40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA
Parameter Min Typical Max Units
Operational Frequency Range 3.1 3.6 GHz
Input Return Loss >6 dB
Output Return Loss >3.5 dB
Output Power at PIN = 26 dBm 49 >50 dBm
Power Gain at PIN = 26 dBm >24 dB
Power Added Efficiency at PIN = 26 dBm 46 >56 %
Gate Leakage (VD = 10 V, VG = −3.7 V) −52 −3 mA
Output Power Temperature Coefficient −0.008 dBm/°C
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 3 of 15 www.qorvo.com
®
Typical Performance: Small Signal
Conditions unless otherwise specified: VD = 30 V, IDQ = 300 mA
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27
30
2.5 2.8 3.1 3.4 3.7 4.0
S2
1 (
dB
)
Frequency (GHz)
Gain vs. Frequency vs. Temp.
-40 °C
25 °C
85 °C
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
2.5 2.8 3.1 3.4 3.7 4.0
S11
(d
B)
Frequency (GHz)
Input Return Loss vs. Frequency vs. Temp.
-40 °C
25 °C
85 °C
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
2.5 2.8 3.1 3.4 3.7 4.0
S2
2 (
dB
)
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
-40 °C
25 °C
85 °C
0
3
6
9
12
15
18
21
24
27
30
2.5 2.8 3.1 3.4 3.7 4.0
S2
1 (
dB
)
Frequency (GHz)
Gain vs. Frequency vs. VD
28 V
30 V
32 V
Temp = 25 °C
24 V
0
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6
9
12
15
18
21
24
27
30
2.5 2.8 3.1 3.4 3.7 4.0
S2
1 (
dB
)
Frequency (GHz)
Gain vs. Frequency vs. IDQ
150 mA
300 mA
600 mA
Temp = 25 °C
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 4 of 15 www.qorvo.com
®
Typical Performance: Small Signal
Conditions unless otherwise specified: VD = 30 V, IDQ = 300 mA
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-21
-18
-15
-12
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-6
-3
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2.5 2.8 3.1 3.4 3.7 4.0
S11
(d
B)
Frequency (GHz)
Input Return Loss vs. Frequency vs. VD
24 V 28V 30 V 32 V
Temp = 25 °C
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-24
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-18
-15
-12
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-6
-3
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2.5 2.8 3.1 3.4 3.7 4.0
S11
(d
B)
Frequency (GHz)
Input Return Loss vs. Frequency vs. IDQ
Temp = 25 °C
150 mA
300 mA
600 mA
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-27
-24
-21
-18
-15
-12
-9
-6
-3
0
2.5 2.8 3.1 3.4 3.7 4.0
S2
2 (
dB
)
Frequency (GHz)
Output Return Loss vs. Frequency vs. VD
28 V
30 V
32 VTemp = 25 °C
24 V
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-27
-24
-21
-18
-15
-12
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-6
-3
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2.5 2.8 3.1 3.4 3.7 4.0
S2
2 (
dB
)
Frequency (GHz)
Output Return Loss vs. Frequency vs. IDQ
150 mA
300 mA
600 mA
Temp = 25 °C
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 5 of 15 www.qorvo.com
®
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
PO
UT
(dB
m)
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
-40 °C @ PIN = 23 dBm
25 °C @ PIN = 26 dBm
85 °C @ PIN = 26 dBm
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
PO
UT
(dB
m)
Frequency (GHz)
Output Power vs. Frequency vs. PIN
23 dBm 26 dBm 27 dBm 28 dBm
Temp = 25 °C
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Pow
er A
dded E
ffic
ien
cy (
%)
Frequency (GHz)
PAE vs. Frequency vs. Temp.
-40 °C @ PIN = 23 dBm
25 °C @ PIN = 26 dBm
85 °C @ PIN = 26 dBm
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Po
we
r A
dd
ed
Effic
ien
cy (
%)
Frequency (GHz)
PAE vs. Frequency vs. PIN
23 dBm 26 dBm 27 dBm 28 dBm
Temp = 25 °C
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4500
5000
5500
6000
6500
7000
7500
8000
2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Dra
in C
urr
ent
(mA
)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
-40 °C @ PIN = 23 dBm
25 °C @ PIN = 26 dBm
85 °C @ PIN = 26 dBm
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4500
5000
5500
6000
6500
7000
7500
8000
2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Dra
in C
urr
ent
(mA
)
Frequency (GHz)
Drain Current vs. Frequency vs. PIN
23 dBm 26 dBm 27 dBm 28 dBm
Temp = 25 °C
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 6 of 15 www.qorvo.com
®
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA
-1
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Ga
te C
urr
en
t (m
A)
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
-40 °C @ PIN = 23 dBm
25 °C @ PIN = 26 dBm
85 °C @ PIN = 26 dBm
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Ga
te C
urr
en
t (m
A)
Frequency (GHz)
Gate Current vs. Frequency vs. PIN
23 dBm 26 dBm 27 dBm 28 dBm
Temp = 25 °C
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PO
UT
(dB
m)
PIN (dBm)
Output Power vs. Input Power vs. Freq.
3.1 GHz
3.3 GHz
3.5 GHz
Temp = 25 °C
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Gain
(dB
)
PIN (dBm)
Power Gain vs. Input Power vs. Freq.
3.1 GHz
3.3 GHz
3.5 GHz
Temp = 25 °C
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2000
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4000
5000
6000
7000
8000
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Dra
in C
urr
ent
(mA
)
PIN (dBm)
Drain Current vs. Input Power vs. Freq.
3.1 GHz
3.3 GHz
3.5 GHz
Temp = 25 °C
-1
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0 5 10 15 20 25 30
Gate
Curr
ent
(mA
)
PIN (dBm)
Gate Current vs. Input Power vs. Freq.
3.1 GHz
3.3 GHz
3.5 GHz
Temp = 25 °C
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 7 of 15 www.qorvo.com
®
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA,
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0 5 10 15 20 25 30
PO
UT
(dB
m)
PIN (dBm)
Output Power vs. Input Power vs. Temp.
-40 °C
25 °C
85 °C
Freq = 3.3 GHz
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3000
4000
5000
6000
7000
8000
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Dra
in C
urr
ent
(mA
)PIN (dBm)
Drain Current vs. Input Power vs. Temp.
-40 °C
25 °C
85 °C
Freq = 3.3 GHz
-1
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Gate
Curr
ent
(mA
)
PIN (dBm)
Gate Current vs. Input Power vs. Temp.
-40 °C
25 °C
85 °C
Freq = 3.3 GHz
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
PO
UT
(dB
m)
Frequency (GHz)
Output Power vs. Frequency vs. VD
24 V
28 V
30 V
32 V
PIN = 26 dBm, Temp = 25 °C
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Pow
er A
dded E
ffic
ien
cy (
%)
Frequency (GHz)
PAE vs. Frequency vs. VD
24 V
28 V
30 V
32 V
PIN = 26 dBm, Temp = 25 °C
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20
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26
28
2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Gain
(dB
)
Frequency (GHz)
Power Gain vs. Frequency vs. VD
24 V
28 V
30 V
32 V
PIN = 26 dBm, Temp = 25 °C
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 8 of 15 www.qorvo.com
®
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA
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52
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
PO
UT
(dB
m)
PIN (dBm)
Output Power vs. Frequency vs. Pulse
PW = 500 µsec, DC = 20 %
PW = 100 µsec, DC = 10 %
PIN = 26 dBm, Temp = 25 °C
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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Pow
er A
dded E
ffic
ien
cy (
%)
PIN (dBm)
PAE vs. Frequency vs. Pulse
PW = 500 µsec, DC = 20 %
PW = 100 µsec, DC = 10 %
PIN = 26 dBm, Temp = 25 °C
-60
-55
-50
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-40
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-30
-25
-20
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2f o
Outp
ut P
ow
er
(dB
c)
PIN (dBm)
2nd Harmonic vs. Input Power vs. Freq.
3.1 GHz
3.3 GHz
3.5 GHz
Temp = 25 °C
-60
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30
3f o
Outp
ut P
ow
er
(dB
c)
PIN (dBm)
3rd Harmonic vs. Input Power vs. Freq.
3.1 GHz
3.3 GHz
3.5 GHz
Temp = 25 °C
-60
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30
2f o
Outp
ut P
ow
er
(dB
c)
PIN (dBm)
2nd Harmonic vs. Input Power vs. Temp.
-40 °C
25 °C
85 °C
Freq = 3.3 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30
3f o
Outp
ut P
ow
er
(dB
c)
PIN (dBm)
3rd Harmonic vs. Input Power vs. Temp.
-40 °C
25 °C
85 °C
Freq = 3.3 GHz
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 9 of 15 www.qorvo.com
®
Notes:
1. Thermal resistance measured to back of package.
2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates
Thermal and Reliability Information
Parameter Test Conditions Value Units
Thermal Resistance (θJC) 1 TBASE = 85 °C, VD = 30 V, IDQ = 300 mA, PDISS = 9 W
0.193 °C/W
Channel Temperature (TCH) (No RF drive) 2 86.7 °C
Thermal Resistance (θJC) 1 TBASE = 85 °C, VD = 30 V, ID_Drive = 7.2 A, (PW = 100 µs, DC = 10%), Freq. = 3.3 GHz, PIN = 27 dBm, POUT = 50.7 dBm, PDISS = 93 W
0.248 °C/W
Channel Temperature (TCH) (Under RF drive) 2 108.1 °C
Power Dissipation and Maximum Gate Current
Test conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
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120
2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Pow
er
Dis
sip
ation
(W
)
Frequency (GHz)
PDISS vs. Frequency vs. TBASE
PIN = 27 dBm, Temp = 25 °C
24V 300mA PW=100µs DC=10%
28V 300mA PW=100µs DC=10%
30V 300mA PW=100µs DC=10%
30V 300mA PW=500µs DC=20%
32V 300mA PW=100µs DC=10%0
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50
75
100
125
150
175
200
225
250
110 120 130 140 150 160 170 180
Maxi
mum
Gate
Curr
ent
(mA
)
Channel Temperature ( C)
IG_MAX vs. TCH vs. Per Stage
Stage 1
Stage 2
Total
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 10 of 15 www.qorvo.com
®
Applications Information
Bias-up Procedure
Set ID limit to 10 A, IG limit to 50 mA
Apply −5 V to VG
Apply +30 V to VD; ensure IDQ is approx. 0 mA
Adjust VG until IDQ = 300 mA
Turn on RF supply
Bias-down Procedure
Turn off RF signal
Reduce VG to −5 V; ensure IDQ is approx. 0 mA
Set VD to 0 V
Turn off VD supply
Turn off VG supply
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RFIN
GND
GND
GND
GND
GND
RFIN
RFIN
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
RFOUT
RFOUT
GND
GND
GND
GND
GND
RFOUT
TGA2813-SM
U1
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 11 of 15 www.qorvo.com
®
Pin Layout & Description
Pin Description
Pin No. Symbol Description
1, 2, 29, 30 VD2 Drain voltage; bias network is required; see recommended Application Information on page 10
5, 26 VG2 Gate voltage; bias network is required; see recommended Application Information on page 10
7, 24 VD1 Drain voltage; bias network is required; see recommended Application Information on page 10
9, 22 VG1 Gate voltage; bias network is required; see recommended Application Information on page 10
15, 16 RFIN Input; matched to 50 Ω; DC blocked
36, 37 RFOUT Output; matched to 50 Ω; DC blocked. Pad is DC grounded.
3, 4, 6, 8, 10-14, 17-21, 23, 25, 27, 28, 31-35, 38-42
GND Connected to ground paddle; must be grounded on PCB
1
2
3
4
5
6
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40
39
38
37
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8
9
30
29
28
27
26
25
24
23
22
36
35
34
33
32
31
10
11
12
13
14
15
16
17
18
19
20
21
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 12 of 15 www.qorvo.com
®
Evaluation Board and Board Mounting Detail
Material:
Layer 1: ROGER 4350, 0.010 thick
Metal 1 and Metal 2: 1.0 oz. Copper per layer
Notes:
1. Both Top and Bottom VD and VG must be biased
Bill of Material
Reference Design Value Description Manufacture Part-Number
C1, C6–C10, C13, C16 10000 pF Cap, 0402, 50 V, 10%, X7R Various
C2, C4, C11, C14 1 μF Cap, 0805, 25 V, 10%, X7R Various
C3, C5, C12, C15 47 μF Cap, 1206, 25 V, 20%, X5R Various
J1, J2 Jumper Wires 20 AWG Various
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 13 of 15 www.qorvo.com
®
Mechanical Information
Units: millimeter
Tolerances: unless specified
x.x = ± 0.01
x.xxx = ± 0.005
Package Metal Base and Leads are GOLD PLATED
Marking:
2813-SM: Part number
YY: Part Assembly year
WW: Part Assembly week
MXXX: Lot Number
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 14 of 15 www.qorvo.com
®
Assembly Notes
Compatible with the latest version of J-STD-020 Lead Free solder, 260 °C.
Recommended Soldering Temperature Profile
TGA2813-SM
3.1 to 3.6 GHz 100 W GaN Power Amplifier
Data Sheet Rev B, October 2019 | Subject to change without notice 15 of 15 www.qorvo.com
®
Handling Precautions
Parameter Rating Standard
Caution! ESD-Sensitive Device
ESD-Human Body Model (HBM) 1C JS-001-2014
ESD-Charge Device Model (CDM) C3 JS-002-2014
MSL-Moisture Sensitivity Level 3 JEDEC/IPC/JEDEC J-STD-020
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations.
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS
DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS
WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR
OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in
medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free