3 2 to-3pf stgwt30h65fb 1 • power factor correction 2 3 ... · 1.2-50 0 tj (°c) (v) 50 100 150...
TRANSCRIPT
111
12
3
TO-3PF
TO-247
12
3
12
3
TAB
TO-3P
G(1)
C(2, TAB)
E(3)G1C2TE3
Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• VCE(sat) = 1.55 V (typ.) @ IC = 30 A• Tight parameters distribution• Safe paralleling• Low thermal resistance
Applications• Photovoltaic inverters• Power factor correction• Welding• High-frequency converters
DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.
Product status links
STGFW30H65FB
STGW30H65FB
STGWT30H65FB
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
STGFW30H65FB, STGW30H65FB, STGWT30H65FB
Datasheet
DS10155 - Rev 6 - April 2020For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol ParameterValue
UnitTO-247, TO-3P TO-3PF
VCES Collector-emitter voltage (VGE = 0 V) 650 V
ICContinuous collector current at TC = 25 °C 60 A
Continuous collector current at TC = 100 °C 30 A
ICP(1) Pulsed collector current 120 A
VGE Gate-emitter voltage ±20 V
PTOT Total power dissipation at TC = 25 °C 260 58 W
VISOInsulation withstand voltage (RMS) from all three leads toexternal heat sink (t = 1 s; Tc = 25 °C) 3.5 kV
Tstg Storage temperature range -55 to 150 °C
TJ Operating junction temperature range -55 to 175 °C
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol ParameterValue
UnitTO-247, TO-3P TO-3PF
RthJC Thermal resistance junction-case 0.58 2.60 °C/W
RthJA Thermal resistance junction-ambient 50 °C/W
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical ratings
DS10155 - Rev 6 page 2/20
2 Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 650 V
VCE(sat)Collector-emitter saturationvoltage
VGE = 15 V, IC = 30 A 1.55 2
VVGE = 15 V, IC = 30 A, TJ = 125 °C 1.65
VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V 250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
- 3659 - pF
Coes Output capacitance - 101 - pF
Cres Reverse transfer capacitance - 76 - pF
Qg Total gate chargeVCC = 520 V, IC = 30 A, VGE = 0 to 15 V(see Figure 27. Gate charge test circuit)
- 149 - nC
Qge Gate-emitter charge - 25 - nC
Qgc Gate-collector charge - 62 - nC
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics
DS10155 - Rev 6 page 3/20
Table 5. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
(see Figure 26. Test circuit for inductiveload switching)
- 37 - ns
tr Current rise time - 14.6 - ns
(di/dt)on Turn-on current slope - 1643 - A/µs
td(off) Turn-off delay time - 146 - ns
tf Current fall time - 23 - ns
Eon (1) Turn-on switching energy - 151 - µJ
Eoff (2) Turn-off switching energy - 293 - µJ
Ets Total switching energy - 444 - µJ
td(on) Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V, TJ = 175 °C
(see Figure 26. Test circuit for inductiveload switching)
- 35 - ns
tr Current rise time - 16.1 - ns
(di/dt)on Turn-on current slope - 1496 - A/µs
td(off) Turn-off-delay time - 158 - ns
tf Current fall time - 65 - ns
Eon (1) Turn-on switching energy - 175 - µJ
Eoff (2) Turn-off switching energy - 572 - µJ
Ets Total switching energy - 747 - µJ
1. Including the reverse recovery of the external SiC diode STPSC206W.2. Including the tail of the collector current.
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics
DS10155 - Rev 6 page 4/20
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics (TJ = 25°C)
GIPG280120141156FSR
100
80
60
40
20
00 1 2 3 4 5 VCE (V)
VGE =7 V
VGE =9 V
VGE =13 VVGE =11 V
VGE =15 V(A)IC
Figure 2. Output characteristics (TJ = 175°C)
GIPG280120141206FSR
100
80
60
40
20
00 1 2 3 4 5
IC (A)
VCE (V)VGE =7 V
VGE =9 V
VGE =11 VVGE =13 VVGE =15 V
Figure 3. Transfer characteristics
GIPG280120141330FSR
100
80
60
40
20
05 7 9 11 VGE (V)
TJ = 25 °C
TJ = 175 °C
VCE = 6 V(A)IC
Figure 4. Collector current vs case temperature forTO-247 and TO-3P
IC
60
40
20
00 50 TC (°C)75
(A)
25 100 125 150
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141346FSR
175
Figure 5. Collector current vs case temperature forTO-3PF
IC
30
20
10
00 50 TC(°C)75
(A)
25 100 125 150
VGE ≥ 15V, TJ ≤ 175 °C
40
GIPD060320141418FSR
Figure 6. VCE(sat) vs junction temperature
VCE(sat)
1.8
1.6
1.4
1.2-50 0 TJ (°C)
(V)
50 100 150
2.2
2.0
VGE = 15 V
IC = 60 A
IC = 30 A
IC = 15 A
GIPG280120141440FSR
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics (curves)
DS10155 - Rev 6 page 5/20
Figure 7. Power dissipation vs case temperature forTO-247 and TO-3P
Ptot
150
100
00 50 TC (°C)75
(W)
25 100 125 150
50
200
175
250
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141353FSR
Figure 8. Power dissipation vs case temperature forTO-3PF
Ptot
30
20
0 0 50 TC(°C) 75
(W)
25 100 125 150
10
40
50
VGE ≥ 15V, TJ ≤ 175 °C
60
GIPD060320141444FSR
Figure 9. Forward bias safe operating area for TO-247 andTO-3P
100
10
1
0.11 VCE (V)
(A)
10 100
Vce(sat) limit
1 ms
100 μs
10 μs
(single pulse Tc = 25 °C, TJ ≤ 175 °C, VGE = 15 V)
GIPG280120141450FSR
10 μs10 μs
IC
Figure 10. Forward bias safe operating area for TO-3PF
IC
100
10
1
0.1 1 VCE(V)
(A)
10 100
10 μs
100 μs
1 ms
(single pulse TC= 25 °C, TJ ≤ 175°C; VGE=15V)
GIPD060320141531FSR
Figure 11. Collector current vs switching frequency forTO-247 and TO-3P
GIPG280120141713FSR
80
60
40
20
0100 101 102
IC (A)
f (kHz)
TC = 80 °C
TC = 100 °C
Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 10 Ω, VGE = 0/15 V , TJ = 175 °C
Figure 12. Collector current vs switching frequency forTO-3PF
0
10
20
30
40
1 10
Ic [A]
f [kHz]
G Ωrectangular current shape,(duty cycle=0.5, VCC = 400V, R =10 ,VGE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
GIPD060320141543FSR
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics (curves)
DS10155 - Rev 6 page 6/20
Figure 13. Normalized VGE(th) vs junction temperature
0.8
0.7
0.6-50 TJ(°C)0 50 100 150
0.9
1.0
VCE = VGE, IC = 1 mA
AM16060v1VGE(th)(norm)
Figure 14. Normalized V(BR)CES vs junction temperature
1.1
1.0
0.9-50 TJ(°C)0 50 100 150
IC = 2 mA
AM16059v1V(BR)CES(norm)
Figure 15. Switching energy vs temperature
E (µJ)
400
200
020 TJ(°C)40 60 80 100
600
VCC= 400V, VGE= 15VRg= 10Ω, IC= 30A
120
EON
EOFF
140 160
GIPG280120141531FSR
Figure 16. Switching energy vs gate resistance
E (µJ)
420
203 RG(Ω)10 17 24
620
VCC= 400V, VGE= 15VIC= 30A, TJ= 175 °C
31
EON
EOFF
38 45
220
820
1020
GIPG280120141535FSR
Figure 17. Switching energy vs collector current
E (µJ)
400
200
00 IC(A)20 40 60
600
VCC= 400V, VGE= 15VRg= 10Ω, TJ= 175°C
EON
EOFF1000
800
1200
GIPG280120141605FSR
Figure 18. Switching energy vs collector emitter voltage
E (µJ)
400
200
0150 VCE(V)250 350 450
600
TJ= 175°C, VGE= 15VRg= 10Ω, IC= 30A
EON
EOFF
800
GIPG280120141609FSR
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics (curves)
DS10155 - Rev 6 page 7/20
Figure 19. Switching times vs collector current
t
IC(A)
(ns)
0 10 201
30
tf
TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V
tdoff
10
tr
tdon
40 50
100
GIPG100720141533FSR
Figure 20. Switching times vs gate resistance
t
10RG(Ω)
(ns)
0 10 20
100
30
tf
TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V
40
tdon
tdoff
tr
GIPG100720141549FSR
Figure 21. Capacitance variations
C
10VCE (V)
(pF)
0.1 1 10
Cies
100
1000
CoesCres
100
GIPG090720141358FSR
Figure 22. VCE(sat) vs collector current
VCE(sat)
1.6
1.4
1.215 30 IC (A)
(V)
45 60
2.2
2.0
1.8
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
TJ = -40 °C
2.4
GIPG280120141446FSR
Figure 23. Gate charge vs gate-emitter voltage
IG = 1mA
4
2
00 Qg (nC)40 80 120 160
6
8
10
12
14
VCC = 520 V, IC = 30 A16
GIPG280120141455FSR
(V)VGE
Figure 24. Thermal impedance for TO-247 and TO-3P
10 10 10 10 10 tp(s)-5 -4 -3 -2 -110-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics (curves)
DS10155 - Rev 6 page 8/20
Figure 25. Thermal impedance for in TO-3PF
10-5 10-4 10-3 tp(s)10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
10-2
10-1
10
ZthTOF3T_A
STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics (curves)
DS10155 - Rev 6 page 9/20
3 Test circuits
Figure 26. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 27. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 28. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTest circuits
DS10155 - Rev 6 page 10/20
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-3PF package information
Figure 29. TO-3PF package outline
7627132_6
STGFW30H65FB, STGW30H65FB, STGWT30H65FBPackage information
DS10155 - Rev 6 page 11/20
Table 6. TO-3PF mechanical data
Dim.mm
Min. Typ. Max.
A 5.30 5.70
C 2.80 3.20
D 3.10 3.50
D1 1.80 2.20
E 0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10.00 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15.00
N 1.80 2.20
R 3.80 4.20
Dia 3.40 3.80
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-3PF package information
DS10155 - Rev 6 page 12/20
4.2 TO-247 package information
Figure 30. TO-247 package outline
0075325_9
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-247 package information
DS10155 - Rev 6 page 13/20
Table 7. TO-247 package mechanical data
Dim.mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-247 package information
DS10155 - Rev 6 page 14/20
4.3 TO-3P package information
Figure 31. TO-3P package outline
8045950_3
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-3P package information
DS10155 - Rev 6 page 15/20
Table 8. TO-3P package mechanical data
Dim.mm
Min. Typ. Max.
A 4.60 4.80 5.00
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20.00 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
ØP 3.30 3.40 3.50
ØP1 3.10 3.20 3.30
Q 4.80 5.00 5.20
Q1 3.60 3.80 4.00
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-3P package information
DS10155 - Rev 6 page 16/20
5 Ordering information
Table 9. Order codes
Order code Marking Package Packing
STGFW30H65FB G30H65FB TO-3PF
TubeSTGW30H65FB GW30H65FB TO-247
STGWT30H65FB GWT30H65FB TO-3P
STGFW30H65FB, STGW30H65FB, STGWT30H65FBOrdering information
DS10155 - Rev 6 page 17/20
Revision history
Table 10. Document revision history
Date Revision Changes
28-Jan-2014 1 Initial release.
24-Feb-2014 2
Updated units in Table 6: Switching characteristics (inductive load) for Ets, and updated note1.
Update Figure 16: Switching losses vs temperature, Figure 17: Switching losses vs gateresistance and Figure 18: Switching losses vs collector current.
Updated title and features in cover page.
Minor text changes.
10-Mar-2014 3
Added device in TO-3PF.
Updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermaldata.
Added Figure 6: Collector current vs. case temperature for TO-3PF,
Figure 9: Power dissipation vs. case temperature for TO-3PF,
Figure 11: Forward bias safe operating area for TO-3PF and
Figure 26: Thermal impedance for TO-3PF.
Updated Section 4: Package information.
20-May-2014 4 Updated Table 2: Absolute maximum ratings.
28-Jul-2015 5
Text and formatting changes throughout document
Updated Table 2: Absolute maximum ratings
Updated Section 2.1: Electrical characteristics (curves)
Updated Section 3: Test circuits
Updated Section 4.2: TO-247 package information
Updated Section 4.3: TO-3P package information
27-Apr-2020 6
Updated applications in cover page.
Updated Table 9. Order codes.
Minor text changes.
STGFW30H65FB, STGW30H65FB, STGWT30H65FB
DS10155 - Rev 6 page 18/20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
STGFW30H65FB, STGW30H65FB, STGWT30H65FBContents
DS10155 - Rev 6 page 19/20
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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STGFW30H65FB, STGW30H65FB, STGWT30H65FB
DS10155 - Rev 6 page 20/20