3 2 to-3pf stgwt30h65fb 1 • power factor correction 2 3 ... · 1.2-50 0 tj (°c) (v) 50 100 150...

111

12

3

TO-3PF

TO-247

12

3

12

3

TAB

TO-3P

G(1)

C(2, TAB)

E(3)G1C2TE3

Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• VCE(sat) = 1.55 V (typ.) @ IC = 30 A• Tight parameters distribution• Safe paralleling• Low thermal resistance

Applications• Photovoltaic inverters• Power factor correction• Welding• High-frequency converters

DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

Product status links

STGFW30H65FB

STGW30H65FB

STGWT30H65FB

Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

STGFW30H65FB, STGW30H65FB, STGWT30H65FB

Datasheet

DS10155 - Rev 6 - April 2020For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/applications/energy-generation-and-distribution/solar-inverters-string-and-central.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS10155

https://www.st.com/en/applications/power-supplies-and-converters/pfc-converter-single-phase-input.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS10155

https://www.st.com/en/applications/industrial-power-and-tools/welding.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS10155

https://www.st.com/en/applications/power-supplies-and-converters/ac-dc-converters.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS10155

http://www.st.com/en/product/STGFW30H65FB?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS10155

https://www.st.com/en/product/stgw30h65fb?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS10155

https://www.st.com/en/product/stgwt30h65fb?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS10155

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol ParameterValue

UnitTO-247, TO-3P TO-3PF

VCES Collector-emitter voltage (VGE = 0 V) 650 V

ICContinuous collector current at TC = 25 °C 60 A

Continuous collector current at TC = 100 °C 30 A

ICP(1) Pulsed collector current 120 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation at TC = 25 °C 260 58 W

VISOInsulation withstand voltage (RMS) from all three leads toexternal heat sink (t = 1 s; Tc = 25 °C) 3.5 kV

Tstg Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol ParameterValue

UnitTO-247, TO-3P TO-3PF

RthJC Thermal resistance junction-case 0.58 2.60 °C/W

RthJA Thermal resistance junction-ambient 50 °C/W

STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical ratings

DS10155 - Rev 6 page 2/20

2 Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 650 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 30 A 1.55 2

VVGE = 15 V, IC = 30 A, TJ = 125 °C 1.65

VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V 250 nA

Table 4. Dynamic characteristics


Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

- 3659 - pF

Coes Output capacitance - 101 - pF

Cres Reverse transfer capacitance - 76 - pF

Qg Total gate chargeVCC = 520 V, IC = 30 A, VGE = 0 to 15 V(see Figure 27. Gate charge test circuit)

- 149 - nC

Qge Gate-emitter charge - 25 - nC

Qgc Gate-collector charge - 62 - nC

STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics

DS10155 - Rev 6 page 3/20

Table 5. Switching characteristics (inductive load)


td(on) Turn-on delay time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V

(see Figure 26. Test circuit for inductiveload switching)

- 37 - ns

tr Current rise time - 14.6 - ns

(di/dt)on Turn-on current slope - 1643 - A/µs

td(off) Turn-off delay time - 146 - ns

tf Current fall time - 23 - ns

Eon (1) Turn-on switching energy - 151 - µJ

Eoff (2) Turn-off switching energy - 293 - µJ

Ets Total switching energy - 444 - µJ

td(on) Turn-on delay time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V, TJ = 175 °C

(see Figure 26. Test circuit for inductiveload switching)

- 35 - ns

tr Current rise time - 16.1 - ns

(di/dt)on Turn-on current slope - 1496 - A/µs

td(off) Turn-off-delay time - 158 - ns

tf Current fall time - 65 - ns

Eon (1) Turn-on switching energy - 175 - µJ

Eoff (2) Turn-off switching energy - 572 - µJ

Ets Total switching energy - 747 - µJ

1. Including the reverse recovery of the external SiC diode STPSC206W.2. Including the tail of the collector current.

STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics

DS10155 - Rev 6 page 4/20

2.1 Electrical characteristics (curves)

Figure 1. Output characteristics (TJ = 25°C)

GIPG280120141156FSR

100

80

60

40

20

00 1 2 3 4 5 VCE (V)

VGE =7 V

VGE =9 V

VGE =13 VVGE =11 V

VGE =15 V(A)IC

Figure 2. Output characteristics (TJ = 175°C)

GIPG280120141206FSR

100

80

60

40

20

00 1 2 3 4 5

IC (A)

VCE (V)VGE =7 V

VGE =9 V

VGE =11 VVGE =13 VVGE =15 V

Figure 3. Transfer characteristics

GIPG280120141330FSR

100

80

60

40

20

05 7 9 11 VGE (V)

TJ = 25 °C

TJ = 175 °C

VCE = 6 V(A)IC

Figure 4. Collector current vs case temperature forTO-247 and TO-3P

IC

60

40

20

00 50 TC (°C)75

(A)

25 100 125 150

VGE ≥ 15V, TJ ≤ 175 °C

GIPG280120141346FSR

175

Figure 5. Collector current vs case temperature forTO-3PF

IC

30

20

10

00 50 TC(°C)75

(A)

25 100 125 150

VGE ≥ 15V, TJ ≤ 175 °C

40

GIPD060320141418FSR

Figure 6. VCE(sat) vs junction temperature

VCE(sat)

1.8

1.6

1.4

1.2-50 0 TJ (°C)

(V)

50 100 150

2.2

2.0

VGE = 15 V

IC = 60 A

IC = 30 A

IC = 15 A

GIPG280120141440FSR

STGFW30H65FB, STGW30H65FB, STGWT30H65FBElectrical characteristics (curves)

DS10155 - Rev 6 page 5/20

Figure 7. Power dissipation vs case temperature forTO-247 and TO-3P

Ptot

150

100

00 50 TC (°C)75

(W)

25 100 125 150

50

200

175

250

VGE ≥ 15V, TJ ≤ 175 °C

GIPG280120141353FSR

Figure 8. Power dissipation vs case temperature forTO-3PF

Ptot

30

20

0 0 50 TC(°C) 75

(W)

25 100 125 150

10

40

50

VGE ≥ 15V, TJ ≤ 175 °C

60

GIPD060320141444FSR

Figure 9. Forward bias safe operating area for TO-247 andTO-3P

100

10

1

0.11 VCE (V)

(A)

10 100

Vce(sat) limit

1 ms

100 μs

10 μs

(single pulse Tc = 25 °C, TJ ≤ 175 °C, VGE = 15 V)

GIPG280120141450FSR

10 μs10 μs

IC

Figure 10. Forward bias safe operating area for TO-3PF

IC

100

10

1

0.1 1 VCE(V)

(A)

10 100

10 μs

100 μs

1 ms

(single pulse TC= 25 °C, TJ ≤ 175°C; VGE=15V)

GIPD060320141531FSR

Figure 11. Collector current vs switching frequency forTO-247 and TO-3P

GIPG280120141713FSR

80

60

40

20

0100 101 102

IC (A)

f (kHz)

TC = 80 °C

TC = 100 °C

Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 10 Ω, VGE = 0/15 V , TJ = 175 °C

Figure 12. Collector current vs switching frequency forTO-3PF

0

10

20

30

40

1 10

Ic [A]

f [kHz]

G Ωrectangular current shape,(duty cycle=0.5, VCC = 400V, R =10 ,VGE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

GIPD060320141543FSR


DS10155 - Rev 6 page 6/20

Figure 13. Normalized VGE(th) vs junction temperature

0.8

0.7

0.6-50 TJ(°C)0 50 100 150

0.9

1.0

VCE = VGE, IC = 1 mA

AM16060v1VGE(th)(norm)

Figure 14. Normalized V(BR)CES vs junction temperature

1.1

1.0

0.9-50 TJ(°C)0 50 100 150

IC = 2 mA

AM16059v1V(BR)CES(norm)

Figure 15. Switching energy vs temperature

E (µJ)

400

200

020 TJ(°C)40 60 80 100

600

VCC= 400V, VGE= 15VRg= 10Ω, IC= 30A

120

EON

EOFF

140 160

GIPG280120141531FSR

Figure 16. Switching energy vs gate resistance

E (µJ)

420

203 RG(Ω)10 17 24

620

VCC= 400V, VGE= 15VIC= 30A, TJ= 175 °C

31

EON

EOFF

38 45

220

820

1020

GIPG280120141535FSR

Figure 17. Switching energy vs collector current

E (µJ)

400

200

00 IC(A)20 40 60

600

VCC= 400V, VGE= 15VRg= 10Ω, TJ= 175°C

EON

EOFF1000

800

1200

GIPG280120141605FSR

Figure 18. Switching energy vs collector emitter voltage

E (µJ)

400

200

0150 VCE(V)250 350 450

600

TJ= 175°C, VGE= 15VRg= 10Ω, IC= 30A

EON

EOFF

800

GIPG280120141609FSR


DS10155 - Rev 6 page 7/20

Figure 19. Switching times vs collector current

t

IC(A)

(ns)

0 10 201

30

tf

TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V

tdoff

10

tr

tdon

40 50

100

GIPG100720141533FSR

Figure 20. Switching times vs gate resistance

t

10RG(Ω)

(ns)

0 10 20

100

30

tf

TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V

40

tdon

tdoff

tr

GIPG100720141549FSR

Figure 21. Capacitance variations

C

10VCE (V)

(pF)

0.1 1 10

Cies

100

1000

CoesCres

100

GIPG090720141358FSR

Figure 22. VCE(sat) vs collector current

VCE(sat)

1.6

1.4

1.215 30 IC (A)

(V)

45 60

2.2

2.0

1.8

VGE = 15 V

TJ = 175 °C

TJ = 25 °C

TJ = -40 °C

2.4

GIPG280120141446FSR

Figure 23. Gate charge vs gate-emitter voltage

IG = 1mA

4

2

00 Qg (nC)40 80 120 160

6

8

10

12

14

VCC = 520 V, IC = 30 A16

GIPG280120141455FSR

(V)VGE

Figure 24. Thermal impedance for TO-247 and TO-3P

10 10 10 10 10 tp(s)-5 -4 -3 -2 -110-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/t

tp

t

Single pulse

δ=0.5

ZthTO2T_B


DS10155 - Rev 6 page 8/20

Figure 25. Thermal impedance for in TO-3PF

10-5 10-4 10-3 tp(s)10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/t

tp

t

Single pulse

δ=0.5

10-2

10-1

10

ZthTOF3T_A


DS10155 - Rev 6 page 9/20

3 Test circuits

Figure 26. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 27. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 28. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTest circuits

DS10155 - Rev 6 page 10/20

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-3PF package information

Figure 29. TO-3PF package outline

7627132_6

STGFW30H65FB, STGW30H65FB, STGWT30H65FBPackage information

DS10155 - Rev 6 page 11/20

https://www.st.com/ecopack

http://www.st.com

Table 6. TO-3PF mechanical data

Dim.mm

Min. Typ. Max.

A 5.30 5.70

C 2.80 3.20

D 3.10 3.50

D1 1.80 2.20

E 0.80 1.10

F 0.65 0.95

F2 1.80 2.20

G 10.30 11.50

G1 5.45

H 15.30 15.70

L 9.80 10.00 10.20

L2 22.80 23.20

L3 26.30 26.70

L4 43.20 44.40

L5 4.30 4.70

L6 24.30 24.70

L7 14.60 15.00

N 1.80 2.20

R 3.80 4.20

Dia 3.40 3.80

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-3PF package information

DS10155 - Rev 6 page 12/20

4.2 TO-247 package information

Figure 30. TO-247 package outline

0075325_9

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-247 package information

DS10155 - Rev 6 page 13/20

Table 7. TO-247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

ØP 3.55 3.65

ØR 4.50 5.50

S 5.30 5.50 5.70

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-247 package information

DS10155 - Rev 6 page 14/20

4.3 TO-3P package information

Figure 31. TO-3P package outline

8045950_3

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-3P package information

DS10155 - Rev 6 page 15/20

Table 8. TO-3P package mechanical data

Dim.mm

Min. Typ. Max.

A 4.60 4.80 5.00

A1 1.45 1.50 1.65

A2 1.20 1.40 1.60

b 0.80 1.00 1.20

b1 1.80 2.00 2.20

b2 2.80 3.00 3.20

c 0.55 0.60 0.75

D 19.70 19.90 20.10

D1 13.70 13.90 14.10

E 15.40 15.60 15.80

E1 13.40 13.60 13.80

E2 9.40 9.60 9.90

e 5.15 5.45 5.75

L 19.80 20.00 20.20

L1 3.30 3.50 3.70

L2 18.20 18.40 18.60

ØP 3.30 3.40 3.50

ØP1 3.10 3.20 3.30

Q 4.80 5.00 5.20

Q1 3.60 3.80 4.00

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTO-3P package information

DS10155 - Rev 6 page 16/20

5 Ordering information

Table 9. Order codes

Order code Marking Package Packing

STGFW30H65FB G30H65FB TO-3PF

TubeSTGW30H65FB GW30H65FB TO-247

STGWT30H65FB GWT30H65FB TO-3P

STGFW30H65FB, STGW30H65FB, STGWT30H65FBOrdering information

DS10155 - Rev 6 page 17/20

Revision history

Table 10. Document revision history

Date Revision Changes

28-Jan-2014 1 Initial release.

24-Feb-2014 2

Updated units in Table 6: Switching characteristics (inductive load) for Ets, and updated note1.

Update Figure 16: Switching losses vs temperature, Figure 17: Switching losses vs gateresistance and Figure 18: Switching losses vs collector current.

Updated title and features in cover page.

Minor text changes.

10-Mar-2014 3

Added device in TO-3PF.

Updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermaldata.

Added Figure 6: Collector current vs. case temperature for TO-3PF,

Figure 9: Power dissipation vs. case temperature for TO-3PF,

Figure 11: Forward bias safe operating area for TO-3PF and

Figure 26: Thermal impedance for TO-3PF.

Updated Section 4: Package information.

20-May-2014 4 Updated Table 2: Absolute maximum ratings.

28-Jul-2015 5

Text and formatting changes throughout document

Updated Table 2: Absolute maximum ratings

Updated Section 2.1: Electrical characteristics (curves)

Updated Section 3: Test circuits

Updated Section 4.2: TO-247 package information

Updated Section 4.3: TO-3P package information

27-Apr-2020 6

Updated applications in cover page.

Updated Table 9. Order codes.

Minor text changes.


DS10155 - Rev 6 page 18/20

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

STGFW30H65FB, STGW30H65FB, STGWT30H65FBContents

DS10155 - Rev 6 page 19/20

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2020 STMicroelectronics – All rights reserved


DS10155 - Rev 6 page 20/20

http://www.st.com/trademarks

3 2 to-3pf stgwt30h65fb 1 • power factor correction 2 3 ... · 1.2-50 0 tj (°c) (v) 50 100 150...

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