2.pel.1semikonduktor jan04
TRANSCRIPT
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04/11/23 1
NAMA PENSYARAH: NAMA PENSYARAH: TN. SYED ADNAN SYED TN. SYED ADNAN SYED
OTHMANOTHMAN
SEMICONDUCTOR SEMICONDUCTOR DEVICESDEVICES
EE201
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CHAPTER 1
(N-type and P-type)
SEMICONDUCTORSEMICONDUCTOR
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Objectives:
1.1. Atomic structureAtomic structure
2.2. Insulators, conductors, Insulators, conductors, semiconductor.semiconductor.
3.3. Semiconductor characteristicSemiconductor characteristic
4.4. N-type and p-type N-type and p-type semiconductorsemiconductor
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Atomic StrukturAtomic Struktur
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Every atom consist of:Every atom consist of:i.i. ElectronElectron
-- smallest and lightest particlesmallest and lightest particle-- negative chargenegative charge-- move in high speed around move in high speed around nukleusnukleus
ii.ii. Proton Proton
-- 1800 times bigger than electron 1800 times bigger than electron
-- positive chargepositive charge
iii.iii. Neutron Neutron Same size of protonSame size of proton No chargeNo charge
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Atomic StructureAtomic Structure
Nukleus Electron orbit
++ +
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HidrogenHidrogen
+proton
electron
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Nukleus atom:-Nukleus atom:- carbon – 6 proton and 6 neutroncarbon – 6 proton and 6 neutron
cuprum – 29 proton, 29 neutroncuprum – 29 proton, 29 neutron
Aluminium – 13 proton, 13 neutronAluminium – 13 proton, 13 neutron
Silicon – 14 proton, 14 neutronSilicon – 14 proton, 14 neutron
Germanium – 32 proton, 32 neutronGermanium – 32 proton, 32 neutron
Atomic Structure
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Atomic StructureAtomic Structure
In the atom there is a maximum of In the atom there is a maximum of seven layers of the orbit (shell)seven layers of the orbit (shell)
the layer is known as K, L, M, N, the layer is known as K, L, M, N, O, P and Q O, P and Q
maximum number of electron in maximum number of electron in the orbit is determined by the orbit is determined by formula:formula:
2 x n²
n – number of the layer
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Maximum number of electrons:Maximum number of electrons:layer K (1)layer K (1) : 2n x 1: 2n x 1²²= = 22
layer L (2)layer L (2) : 2n x 2: 2n x 2²²= = 88
layer M (3)layer M (3) : 2n x 3: 2n x 3²²= = 1818
layer N (4)layer N (4) : 2n x 4: 2n x 4²²= = 3232
layer O (5)layer O (5) : 2n x 5: 2n x 5²²= = 5050
layer P (6)layer P (6) : 2n x 6: 2n x 6²²= = 7272
layer Q (7)layer Q (7) : 2n x 7: 2n x 7²²= = 9898
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+13 2 + 8 + 3 = 13
Layer K = 2 electron
layer L = 8 electron
layer M = 3 electron
Aluminium = 13 electron
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Outer layer of atom is called valence shell
There is not more than 8 electrons valence in this layer
Electron in this layer is called– electron valence
Number of electron valence determine the electrical characteristic of the material.
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Trivalence Atom .
3 electron valence
Indium, Boron dan Aluminium
Pentavalence Atom .
5 electron valence
Antimony (Sb), arsenic (As)
Neutral Atom :-
Number of proton = number of electron
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Materials that have a very Materials that have a very low resistance and therefore low resistance and therefore
pass current easilypass current easily
i.i. ConductorConductor
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1. Low resistance, current can easily flow
2. Atom is more tend to release its electron valence
3. This Electron can move from one to another atom freely .
1 – 3 electron valence
ii. Conductor characteristic
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Materials that have a very Materials that have a very high resistance and high resistance and threfore oppose currentthrefore oppose current
ii.ii. InsulatorInsulator
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1. Current cannot flow through2. High resistance3. Receives electrons from atomic
valence of other atoms to fill the valence levels and make it stable and free of any electrical activity @ chemistry
5 – 8 elektron valens
ii. Insulator characteristic
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iii.iii. SemiconductorSemiconductor
Neither a conductor nor a insulatorNeither a conductor nor a insulator
They can be controlled to either They can be controlled to either increase their resistance and behave increase their resistance and behave more like an insulator or more like an insulator or
decrease their resistance and decrease their resistance and behave more like a conductorbehave more like a conductor
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Have 4 electron valenceHave 4 electron valence
1. Neither a conductor nor a insulator
2. not easily release or received electron valence to/from other atom
iii. Semiconductor
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Silicon dan GermaniumSilicon dan Germanium
1432
Layer (M) – Layer Valens = 4
Layer (N) – Layer Valens = 4
layer(K) = 2 x 1 = 2
layer(L)
2 x 4 = 8
Layer (M)
2 x 9 = 18
No. atom Germanium = 32
2 + 8 + 18 + 4 = 32No.atom silikon = 14
2 + 8 + 4 = 14
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Covalent bond Covalent bond
When two or more When two or more similar semiconductor similar semiconductor atoms are combined to atoms are combined to form a solid element. form a solid element. They will share its 4 They will share its 4 electron valence with electron valence with its neighbouring atom. its neighbouring atom.
Si Si
Si Si Si
Si
Si Si Si
Covalent bond
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N –type N –type and and PP -type -type semiconductor semiconductor characterisriccharacterisric
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N-typeN-type
when Silicon @ when Silicon @ Germanium semiconductor Germanium semiconductor is dopped with pentavalen is dopped with pentavalen (Arsenic) impurity, there is (Arsenic) impurity, there is extra 1 electronextra 1 electronThis material is called N This material is called N typetype
Si Si
Si As Si
Si
Si Si Si
Covalent bond
Extra 1 electron
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P typeP type
When semiconductor When semiconductor Silicon or Germanium Silicon or Germanium doped with trivalent doped with trivalent impurities (indium), impurities (indium), shortage of an shortage of an electron.electron. Hol exist, charged + Hol exist, charged + veve This Semiconductor This Semiconductor becomes more hole becomes more hole This material is This material is called P type called P type
Si Si
Si In Si
Si
Si Si Si
Shortage of an electron
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P type
Figure 7
P type P type characteristiccharacteristic
Semiconductor is dopped Semiconductor is dopped with impurities with 3 with impurities with 3 electron valenceelectron valenceCurrent majority carrier is Current majority carrier is holeholeCurrent minority carrier is Current minority carrier is electronelectron
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Semiconductor is dopped Semiconductor is dopped with impurities with 5 with impurities with 5 electron valenceelectron valenceCurrent majority carrier is Current majority carrier is electronelectronCurrent minority carrier is Current minority carrier is holehole
N type
Figure 6
N type N type characteristiccharacteristic
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N P
Figure 5
P-N junctionP-N junction
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Depletion Region
Barrier Voltagei. Germanium = 0.3V
ii. Silicon = 0.7V
N P
Rajah 6
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What happen when What happen when junction builds up junction builds up
Electron in the n type Electron in the n type become attracted to fill the become attracted to fill the hole in the p type side.hole in the p type side.
Crossing of electrons occurs Crossing of electrons occurs from the N-type to the P-from the N-type to the P-type type
P-N junctionP-N junction
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What happen when What happen when junction builds up junction builds up
This electron-Hole This electron-Hole combination makes the atoms combination makes the atoms near the grafts to be neutral.near the grafts to be neutral. After a while an area with no After a while an area with no current carriers exists .current carriers exists .
P-N junctionP-N junction
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What happen when What happen when junction builds up junction builds up
Crossing of electrons will Crossing of electrons will stopstop
This area is called depletion This area is called depletion regionregion
Only small resistance Only small resistance between the 2 combined between the 2 combined material to form depletion material to form depletion regionregion
P-N junctionP-N junction
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Potential difference between Potential difference between p-n junction is known as p-n junction is known as barrier voltage. barrier voltage.
Barrier voltage Barrier voltage :-:-- - Germanium = Germanium =
0.3V0.3V- - Silikon Silikon = =
0.7V0.7V
What happen when What happen when junction builds up junction builds up
P-N junctionP-N junction
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1. Biasing Voltage
voltage supplied to p-n junction
2 types of biasing :-
i. Forward biased
ii. Reversed biased
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i.i. Forward Forward biasedbiased
Definition :-Definition :-
negative source negative source connected to n-type connected to n-type
and and
positive source positive source connected to p-typeconnected to p-type
1. Biasing Voltage
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i. Depletion region become thinner, smaller
ii. Resistance becomes lowiii. Current can pass through
N-type
Figure 7
P-type
i. Forward Biased
1. Biasing Voltage
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Definition:-Definition:-
N-type material receives N-type material receives positive voltage supply positive voltage supply and p-type receives and p-type receives negative voltage supplynegative voltage supply
ii. Reverse Biased
1. Biasing Voltage
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i. Depletion region becomes widerii. Resistance becomes higheriii. Current cannot pass through
N-type
Figure 8
P-type
1. Biasing Voltage
ii. Reverse Biased
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2. Leakage Current
Minority current in the material.Minority current in the material. Exist when p-n combination Exist when p-n combination
receives reverse biased voltagereceives reverse biased voltage Electrons inside p-type material Electrons inside p-type material
will be pushed by biased voltage will be pushed by biased voltage towards the junction and across towards the junction and across it. it.
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2. Leakage Current
Produce a very small of current Produce a very small of current flow.flow.
This current is called leakage This current is called leakage voltage or reverse currentvoltage or reverse current
The value depends on The value depends on temperature . Smaller the temperature . Smaller the temperature value, the current temperature value, the current will be smaller too and vice will be smaller too and vice versa. versa.
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3. Breakdown Voltage
If the combined p-n supplied with If the combined p-n supplied with a very high reverse biased a very high reverse biased voltage, it will disturb the stability voltage, it will disturb the stability of covalent bond. of covalent bond.
Electrons will attracted to positive Electrons will attracted to positive potential and become free as a potential and become free as a current carriercurrent carrier
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3. Breakdown Voltage
This evolved electrons would violate This evolved electrons would violate other bond.other bond.
The result was a high value reverse The result was a high value reverse current flow current flow
The voltage where the breakdown The voltage where the breakdown occurs is called breakdown voltageoccurs is called breakdown voltage
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3. Breakdown Voltage
The p-n juntion will burnThe p-n juntion will burn
The voltage is the maksimum The voltage is the maksimum voltage of the junction when voltage of the junction when reverse biased Voltanreverse biased Voltan
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Contoh-contoh soalanContoh-contoh soalan
1.1. Lukiskan rajah struktur atom bagi :Lukiskan rajah struktur atom bagi :
a.a. Germanium mempunyai no atom 32.Germanium mempunyai no atom 32.
b.b. Silikon yang mempunyai no atom 14.Silikon yang mempunyai no atom 14.
Serta nyatakan sifat bahan-bahan Serta nyatakan sifat bahan-bahan tersebut .tersebut .
2. Apakah Ikatan Kovelen dan lukiskan rajah yang menunjukkan Ikatan kovelen bagi Germanium
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Contoh-contoh soalanContoh-contoh soalan
3.3. Berikan 4 faktor yang membolehkan Berikan 4 faktor yang membolehkan elektron terbebas dari ikatan Kovelenelektron terbebas dari ikatan Kovelen
4.4. Untuk membolehkan bahan jenis N Untuk membolehkan bahan jenis N dan P terhasil, semikonduktor tulen dan P terhasil, semikonduktor tulen perlu diserapkan dengan bendasing. perlu diserapkan dengan bendasing. Apakah bendasing itu dan terangkan Apakah bendasing itu dan terangkan setiap satu dan berikan contoh rajah setiap satu dan berikan contoh rajah yang menerangkan semikonduktor yang menerangkan semikonduktor tulen yang diserapkan dengan salah tulen yang diserapkan dengan salah satu bendasingsatu bendasing
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Contoh-contoh soalanContoh-contoh soalan
5.5. Nyatakan pembawa arus majoriti dan Nyatakan pembawa arus majoriti dan minoriti bagi bahan jenis N dan P.minoriti bagi bahan jenis N dan P.
6.6. Lukiskan dan jelaskan secara ringkas Lukiskan dan jelaskan secara ringkas maksud voltan pincang hadapan dan maksud voltan pincang hadapan dan voltan pincang songsangvoltan pincang songsang
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SEKIAN SEKIAN
TERIMATERIMA
KASIHKASIH
SEKIAN SEKIAN
TERIMATERIMA
KASIHKASIH