100w, 28v, dc – 3.5 ghz, gan rf power transistor...1 vd / rf out 2 vg / rf in flange source...
TRANSCRIPT
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 1 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Ordering Information Part ECCN Description
TGF2929-FL EAR99 Packaged part Flangeless
TGF2929-FL-EVB1 EAR99 3.1-3.5 GHz Evaluation Board
Functional Block Diagram
Pin Configuration Pin No. Label 1 VD / RF OUT
2 VG / RF IN
Flange Source
General Description The TriQuint TGF2929-FL is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25HVprocess, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Product Features
• Frequency: DC to 3.5 GHz
• Output Power (P3dB): 107 W at 3.5 GHz
• Linear Gain: > 14 dB at 3.5 GHz
• Typical PAE: > 50% at 3.5 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 2 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
RF Characterization – Load Pull Performance at 1 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 21.2 dB
P3dB Output Power at 3 dB Gain Compression (Power Tuned) 100 W
PAE3dB Power-Added Efficiency at 3 dB Gain Compression (Eff. Tuned)
75.7 %
G3dB Gain at 3 dB Compression (Power Tuned) 18.2 dB
Notes: 1. Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 2 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 16.7 dB
P3dB Output Power at 3 dB Gain Compression (Power Tuned) 132 W
PAE3dB Power-Added Efficiency at 3 dB Gain Compression (Eff. Tuned)
64.4 %
G3dB Gain at 3 dB Compression (Power Tuned) 13.7 dB
Notes: 1. Pulse: 100µs, 20%
Absolute Maximum Ratings Parameter Value Breakdown Voltage (BVDG) 145 V min.
Gate Voltage Range (VG) -10 to 0 V
Drain Current (ID) 12 A
Gate Current (IG) -28.8 to 33.6 mA
Power Dissipation (PD) 144 W
RF Input Power, CW, T = 25°C (PIN)
39.8 dBm
Channel Temperature (TCH) 275 °C
Mounting Temperature (30 Seconds)
320 °C
Storage Temperature -40 to 150 °C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.
Recommended Operating Conditions
Parameter Value Drain Voltage (VD) 28 V (Typ.)
Drain Quiescent Current (IDQ) 260 mA (Typ.)
Peak Drain Current, Pulse ( ID) 7.23 A (Typ.)
Gate Voltage (VG) -2.9 V (Typ.)
Channel Temperature (TCH) 250 °C (Max.)
Power Dissipation, CW (PD) 82 W (Max)
Power Dissipation, Pulse (PD) 140 W (Max)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating conditions.
Pulse signal: 100uS Pulse Width, 20% Duty Cycle
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 3 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
RF Characterization – Load Pull Performance at 3.0 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 15.6 dB
P3dB Output Power at 3 dB Gain Compression (Power Tuned) 120 W
PAE3dB Power-Added Efficiency at 3 dB Gain Compression (Eff. Tuned)
65.5 %
G3dB Gain at 3 dB Compression (Power Tuned) 12.6 dB
Notes: 1. Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.5 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 15.8 dB
P3dB Output Power at 3 dB Gain Compression (Power Tuned) 107 W
PAE3dB Power-Added Efficiency at 3 dB Gain Compression (Eff. Tuned)
58.4 %
G3dB Gain at 3 dB Compression (Power Tuned) 12.8 dB
Notes: 1. Pulse: 100µs, 20%
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 4 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
RF Characterization – Performance at 3.3GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter Min Typical Max Units
GLIN Linear Gain 15.0 dB
P3dB Output Power at 3 dB Gain Compression 106 W
PAE3dB Power-Added Efficiency at 3 dB Gain Compression 51.3 %
G3dB Gain at 3 dB Compression 12.0 dB
Notes: 1. Pulse: 100µs PW, 20% 2. Performance at 3.3GHz in the 3.1 to 3.5GHz Evaluation Board
RF Characterization – Mismatched Ruggedness at 3.50 GHz (1, 2) Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1
Notes: 1. Input power established at P3dB at matched load at the output of 3.1 – 3.5 GHz Evaluation Board 2. Pulse: 100uS PW, 20%
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 5 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Thermal and Reliability Information - Pulsed Parameter Test Conditions Value Units Thermal Resistance(1) (θJC)
100uS, 5%, Pdiss = 100W
0.75 °C/W
Channel Temperature (TCH) 160 °C
Median Lifetime (TM) 1.92E09 Hours
Thermal Resistance(1) (θJC)
100uS, 10%, Pdiss = 100W
0.79 °C/W
Channel Temperature (TCH) 164.3 °C
Median Lifetime (TM) 1.24E09 Hours
Thermal Resistance(1) (θJC)
300uS, 20%, Pdiss = 100W
0.88 °C/W
Channel Temperature (TCH) 173 °C
Median Lifetime (TM) 5.13E08 Hours
Thermal Resistance(1) (θJC)
300uS, 50%, Pdiss = 100W
1.15 °C/W
Channel Temperature (TCH) 200 °C
Median Lifetime (TM) 4.20E07 Hours
Notes: 1. Thermal resistance measured to bottom of package.
Thermal and Reliability Information - CW 1 Parameter Test Conditions Value Units Thermal Resistance (θJC)
85 °C Case 28.8 W Pdiss
0.87 ºC/W
Channel Temperature (TCH) 110 °C
Median Lifetime (TM) 6.38E11 Hrs
Thermal Resistance (θJC) 85 °C Case 57.6 W Pdiss
1.49 ºC/W
Channel Temperature (TCH) 171 °C
Median Lifetime (TM) 6.29E8 Hrs
Thermal Resistance (θJC) 85 °C Case 86.4 W Pdiss
1.62 ºC/W
Channel Temperature (TCH) 225 °C
Median Lifetime (TM) 5.49E6 Hrs
Thermal Resistance (θJC) 85 °C Case 115.2 W Pdiss
1.74 ºC/W
Channel Temperature (TCH) 285 °C
Median Lifetime (TM) 7.80E4 Hrs
Notes: 1. Thermal resistance measured to bottom of package.
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 6 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Median Lifetime
1.00E+05
1.00E+06
1.00E+07
1.00E+08
1.00E+09
1.00E+10
1.00E+11
1.00E+12
1.00E+13
1.00E+14
1.00E+15
1.00E+16
1.00E+17
1.00E+18
1.00E+19
25 50 75 100 125 150 175 200 225 250 275
Me
dia
n L
ife
tim
e,
TM
(Ho
urs
)
Channel Temperature, TCH (°C)
Median Lifetime vs. Channel Temperature
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 7 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Maximum Channel Temperature - Pulsed
120.0
140.0
160.0
180.0
200.0
220.0
240.0
260.0
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
Ma
xim
um
Ch
an
ne
l Te
mp
era
ture
(oC
)
Pulse Width (sec)
Maximum Channel Temperature
Package base fixed at 85 oC, Pdiss = 100 W
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 8 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 260 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1 1.2
1.4
1.6
1.8
2
0.3
0.4
0.5
0.6
1GHz, Load-pull
49.9
49.7
49.5
20.419.919.4
75.5
73.571.5
•••• Max Power is 50dBm
at Z = 2.241+0.492iΩΩΩΩ
ΓΓΓΓ = -0.6764+0.0592i
•••• Max Gain is 20.4dB
at Z = 1.648+2.661iΩΩΩΩ
ΓΓΓΓ = -0.6861+0.3361i
•••• Max PAE is 75.7%
at Z = 2.391+3.013iΩΩΩΩ
ΓΓΓΓ = -0.588+0.3395i
Zo = 11.7ΩΩΩΩ
Zs(fo) = 1.45-0.27iΩΩΩΩ
Zs(2fo) = 6.54+24.95iΩΩΩΩZs(3fo) = 3.67-16.91iΩΩΩΩZl(2fo) = NaNΩΩΩΩ
Zl(3fo) = NaNΩΩΩΩ
Power
Gain
PAE
-
TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 9 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 260 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1 1.2
1.4
-0.4
-0.3
2GHz, Load-pull
5150.8
50.6
14.9
14.4
13.9 63.9
61.9
59.9
•••• Max Power is 51.2dBm
at Z = 2.555-1.967iΩΩΩΩ
ΓΓΓΓ = -0.6108-0.2223i
•••• Max Gain is 15.1dB
at Z = 3.421+0.937iΩΩΩΩ
ΓΓΓΓ = -0.5416+0.0955i
•••• Max PAE is 64.4%
at Z = 1.679-0.781iΩΩΩΩ
ΓΓΓΓ = -0.7431-0.1018i
Zo = 11.7ΩΩΩΩ
Zs(fo) = 1.33-4.22iΩΩΩΩ
Zs(2fo) = 1.06+1.79iΩΩΩΩZs(3fo) = 2.31+1.72iΩΩΩΩZl(2fo) = NaNΩΩΩΩ
Zl(3fo) = NaNΩΩΩΩ
Power
Gain
PAE
-
TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 10 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 260 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1 1.2
-0.4
-0.3
3GHz, Load-pull
50.7
50.5
50.3
14.2
13.7
13.2
64.4
62.460.4
•••• Max Power is 50.8dBm
at Z = 2.794-4.043iΩΩΩΩ
ΓΓΓΓ = -0.4979-0.4178i
•••• Max Gain is 14.4dB
at Z = 1.705-1.63iΩΩΩΩ
ΓΓΓΓ = -0.7202-0.2092i
•••• Max PAE is 65.5%
at Z = 1.752-2.538iΩΩΩΩ
ΓΓΓΓ = -0.6797-0.317i
Zo = 11.7ΩΩΩΩ
Zs(fo) = 5.16-8.3iΩΩΩΩ
Zs(2fo) = 3.73-4.83iΩΩΩΩ
Zs(3fo) = 37.97-7.46iΩΩΩΩZl(2fo) = NaNΩΩΩΩ
Zl(3fo) = NaNΩΩΩΩ
Power
Gain
PAE
-
TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 11 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 260 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-0.5
-0.4
-0.3
3.5GHz, Load-pull
50.3
50.1
49.9
13.913.4
12.9
57.5
55.5
53.5
•••• Max Power is 50.3dBm
at Z = 2.992-5.16iΩΩΩΩ
ΓΓΓΓ = -0.4178-0.4979i
•••• Max Gain is 14dB
at Z = 1.839-3.661iΩΩΩΩ
ΓΓΓΓ = -0.6106-0.4355i
•••• Max PAE is 58.4%
at Z = 1.839-3.661iΩΩΩΩ
ΓΓΓΓ = -0.6106-0.4355i
Zo = 11.7ΩΩΩΩ
Zs(fo) = 13-0.58iΩΩΩΩ
Zs(2fo) = 7.62+3.24iΩΩΩΩ
Zs(3fo) = 41.24+12.78iΩΩΩΩZl(2fo) = NaNΩΩΩΩ
Zl(3fo) = NaNΩΩΩΩ
Power
Gain
PAE
-
TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 12 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Typical Load-pull Performance – Power Tuned(1, 2)
1. Vds = 28V, Idq = 260mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C
2. Performance measured at device’s reference planes. See page 18.
15
20
25
30
35
40
45
50
55
60
65
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
39 40 41 42 43 44 45 46 47 48 49 50 51 52
PA
E [
%]
Ga
in [
dB
]
Pout [dBm]
TGF2929-FL Gain and PAE vs. Pout
Zs0 = 1.33-j4.22ΩZl0 = 2.56-j1.97Ω
2GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
10
15
20
25
30
35
40
45
50
55
60
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
40 41 42 43 44 45 46 47 48 49 50 51
PA
E [
%]
Gain
[d
B]
Pout [dBm]
TGF2929-FL Gain and PAE vs. Pout
Zs0 = 5.16-j8.30ΩZl0 = 2.79-j4.04Ω
3GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
10
15
20
25
30
35
40
45
50
55
60
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
38 39 40 41 42 43 44 45 46 47 48 49 50 51P
AE
[%
]
Ga
in [
dB
]
Pout [dBm]
TGF2929-FL Gain and PAE vs. Pout
Zs0 = 13.0-j0.58ΩZl0 = 2.99-j5.16Ω
3.5GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
15
20
25
30
35
40
45
50
55
60
65
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
44 45 46 47 48 49 50 51
PA
E [
%]
Ga
in [
dB
]
Pout [dBm]
TGF2929-FL Gain and PAE vs. Pout
Zs0 = 1.45-j0.27ΩΩΩΩZl0 = 2.24+j0.49Ω
1GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
-
TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 13 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Typical Load-pull Performance – Efficiency Tuned(1, 2)
1. Vds = 28V, Idq = 260mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C
2. Performance measured at device’s reference planes. See page 18.
20
25
30
35
40
45
50
55
60
65
70
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
40 41 42 43 44 45 46 47 48 49 50 51
PA
E [
%]
Ga
in [
dB
]
Pout [dBm]
TGF2929-FL Gain and PAE vs. Pout
Zs0 = 1.33-j4.22Ω
Zl0 = 1.68-j0.78Ω
2GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
25
30
35
40
45
50
55
60
65
70
75
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
41 42 43 44 45 46 47 48 49 50
PA
E [
%]
Ga
in [
dB
]
Pout [dBm]
TGF2929-FL Gain and PAE vs. Pout
Zs0 = 5.16-j8.30Ω
Zl0 = 1.75-j2.54Ω
3GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
20
25
30
35
40
45
50
55
60
65
70
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
39 40 41 42 43 44 45 46 47 48 49
PA
E [
%]
Ga
in [
dB
]
Pout [dBm]
TGF2929-FL Gain and PAE vs. Pout
Zs0 = 13.0-j0.58Ω
Zl0 = 1.84-j3.66Ω
3.5GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
-
TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 14 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
50.0
60.0
70.0
80.0
90.0
100.0
110.0
120.0
130.0
140.0
150.0
3.1 3.2 3.3 3.4 3.5
P3
dB
[W
]
Frequency [GHz]
P3dB vs. Frequency vs. Temperature
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
3.1 3.2 3.3 3.4 3.5G
3d
B [
dB
]
Frequency [GHz]
G3dB vs. Frequency vs. Temperature
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
0
10
20
30
40
50
60
70
80
90
100
3.1 3.2 3.3 3.4 3.5
PA
E3
dB
[%
]
Frequency [GHz]
PAE3dB vs. Frequency vs. Temperature
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
-
TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 15 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Evaluation Board Performance at 25°C (1, 2)
Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
5.0
6.5
8.0
9.5
11.0
12.5
14.0
15.5
17.0
18.5
20.0
50
60
70
80
90
100
110
120
130
140
150
3.1 3.2 3.3 3.4 3.5
G3
dB
[d
B]
P3
dB
[W
]
Frequency [GHz]
P3dB and G3dB vs. Frequency @ 25°C
P3dB
G3dB
0
10
20
30
40
50
60
70
80
90
100
3.1 3.2 3.3 3.4 3.5
PA
E [
%]
Frequency [GHz]
PAE vs. Frequency at 25°C
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 16 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Application Circuit
Bias-up Procedure Bias-down Procedure
1. VG set to -5 V. 2. VD set to 28 V. 3. Adjust VG more positive until quiescent ID is 260
mA. 4. Apply RF signal.
1. Turn off RF signal. 2. Turn off VD and wait 1 second to allow drain
capacitor dissipation. 3. Turn off VG.
1
2
3
FET
CAPID=C1
RESID=R1
CAPID=C2
CAPID=C3
INDID=L1
RESID=R2
CAPID=C4
INDID=L2
CAPID=C5
CAPID=C6
CAPID=C7
CAPID=C8
DC_VID=Vg
DC_VID=Vd
PORTP=1Z=50 Ohm PORT
P=2Z=50 Ohm
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 17 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials Reference Design Value Qty Manufacturer Part Number
R1 100 Ω 1 Vishay/Dale CRCW0603100RJNEA
C1, C2 5.6 pF 2 ATC 600S5R6BT
C3 1.0 pF 1 ATC 600S1R0BT
L1 22 nH 1 Coilcraft 0805CS-220X-LB
R2 10 Ω 1 Vishay/Dale CRCW060310R0JNEA
C4 10 uF 1 Murata C1632X5R0J106M130AC
L2 12 nH 1 Coilcraft A04T_L
C5 2400 pF 1 Murata C08BL242X-5UN-X0T
C6 1000 pF 1 ATC 800B102JT50XT
C7 220 uF 1 United Chemi-Con EMVY500ADA221MJA0G
C8 15 pF 1 ATC 600S150JT250XT
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 18 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Pin Layout
Note: The TGF2929-FL will be marked with the “TGF2929-FL” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description Pin Symbol Description
1 VD / RF OUT Drain voltage / RF Output
2 VG / RF IN Gate voltage / RF
3 Flange Source connected to ground
Reference Planes
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 19 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Mechanical Information All dimensions are in inches.
Note:
Unless otherwise noted, all tolerances are +/-0.005 inches. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free and tin-lead soldering processes.
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 20 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Product Compliance Information ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
ESD Rating: Class 1B Value: ≥ 500 V and < 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114
Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° C
RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
MSL Rating
The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
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TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev A - 12-11-14 - 21 of 21 - Disclaimer: Subject to change without notice
© 2014 TriQuint www.triquint.com
Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: [email protected] Fax: +1.972.994.8504 For technical questions and application information: Email: [email protected]
Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.