1 cmos for next 15 years as the mainstream of nano device technology: problems, solutions and beyond...
TRANSCRIPT
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CMOS for next 15 years as the mainstream of nano device technology:
problems, solutions and beyond that
Tokyo Institute of Technology, Japan
Hiroshi IWAI
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16Gb NAND, SAMSUNG
Now: After 45 Years from the 1st single MOSFETs
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Sub-10 nm CMOS transistors will be realized with new technologies anyway.
Concerns of integration such huge number of transistors. Already 16Gbit: larger than that of world population comparable for the numbers of neurons in human brain
128Gbit: comparable with those of galaxies
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Concerns for the integration
1) Too huge power consumption, heat generation?
2)Too huge variations in transistor characteristics, which could make the circuit design impossible?
3)Too many number of transistors for the circuit designers to manipulate? (design crisis)
4)No merit of transistor downsizing in performance and power, because of CR of interconnect cannot be reduced?
8)Who will pay the huge production cost?
5JEITA IC Handbook
150mmwafer
200mmwafer
300mmwafer
Front-end processing equipments
Front-end processing buildings
Back-end processing equipments
Front-end ancillary facility
Back-end processing buildings
1M 4M 16M 64M 256M 1G Bit DRAM
Am
ount
of
capi
tal i
nves
tmen
t (M
US
$)
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
2,000Amount of capital investment on Each of DRAM generation
Problem is the huge production cost and investment!
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Examples of foundry facility: UMC
UMC
7TSMC
Volume production with lager wafer is a solution
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Concerns for Nano-CMOSintegration
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9 yrs + 2 yrs delay* 9 yrs? + 2 yrs delay? 9 yrs + ?yrs delay
675mm/2021?450mm/2012?300mm/2001200mm/1990 (125/150mm - 1981)
We are here When does this happen?
When do we start planning for next wafer size transition?
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Furnace Height: 12 m Weight: 36 ton Hot zone: 40 inch Cusp-type super conductive magnetCrystal Diameter: 400 mm Weight: over 400 kg Body length: over 1m
Provided by Super Silicon Crystal Research Institute Corp.(SSi)
Crystal pulling furnace becomes too hugeSi crystal height cannot be very long because of its weight
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2004 2005 2006 2007 2008 2009 2010 2011 2012
2004 2005 2006 2007 2008 2009 2010 2011 2012
Carrier & lot-sizedetermination
Direct TransportStandards
Production EquipmentStandards
Factory Control System Standards
Interoperability Testing& Reliability Verification
450mm waferStandards
There is a proposed time line from 300 to 450 mm, but huge cost, work, energy are required,And no one can take a leadership at this moment.
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Concerns for the integration
1) Too huge power consumption, heat generation?
2)Too huge variations in transistor characteristics, which could make the circuit design impossible?
3)Too many number of transistors for the circuit designers to manipulate? (design crisis)
4)No merit of transistor downsizing in performance and power, because of CR of interconnect cannot be reduced?
8)Who will pay the huge production cost?
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Those concerns have been talked about so many times and so many years. (Like wolf boy!)
Hopefully, the status in which wolf has not come, would continues for future.
Each concern is a really crisis and critical problem.
However, each crisis will not make completely useless to make downsizing.
We will find a practical solution with many compromises, such that water always fine a lowest places and keep running.
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P. P. Gelsinger, “Microprocessor for the New Millennium: Challenges, Opportunities, and New Frontiers,” Dig. Tech. 2001 ISSCC, San Francisco, pp.22-23, February, 2001
Microprocessors Trend
Today: 2002 (Intel)
Lg sub-70 nm
Tox 1.4 nm
f 2.53 GHz
P several 10 W
N 50 M
Heat generation
2002 年 10W/cm2 Hot plate
2006 年 100W/cm2 Surface of nuclear reactor
2010 年 1000W/cm2 rocket nozzle
2016 年 10000W/cm2 Sun surface
2008 (Intel)
Lg sub-25 nm
Tox 0.7 nm
f 30 GHz
P 10 kW
N 1.8B
MIPS 1M MIPS (TIPS)
Increase in Power consumption Heat generation
Past: 1972 (Intel)
Lg 10,000 nm
Tox 1200 nm
f 0.00075 GHz
P a few 100 mW
N 2.25k
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1)Power and heat increaseMaybe, it is not efficient to increase the clock frequency and number of transistors
There will not be a big merit without improving the operating frequency of board or package, and reduce the power consumed there.
Main job of my PC is editing of the document and accessing to internet. Such an extremely high clock frequency should not be necessary.
Improvement of PC algorithm such that using file searching method of Google will save the power very much.
Downsizing of Printed Circuit Board will also save the power.
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5) Variation of transistor characteristics
System and circuit design will assume such variation.
If too huge variation, Reconfigurable circuit and system desing can avoid such transistors with huge variations. ECC ( Error Correction Code ) will helps a lot.
Cannot suppress the variation under certain level, but we can offer as many transistors as the designers want.
It is also important to use the larger device in the circuit, depending on the usage.Large gate are is useful to reduce the flicker noise.
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6)Desing crisis for human power
We could expect the progress of CAD.Then, we can do only whatever we can design in that period with the given manpower.
Multi-level system/circuit design, such as multi-core of microprocessor will save the human power, for example.
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7) Interconnect R & C
It has been continuously said from 2 or 3 micron meter generations that interconnects limit the downsizing. But fortunately, it has never happened before.
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8)Huge development and production cost.
Leading edge company in memory, microprocessor, DSP, foundry make huge profit.They should cover the coat.
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40000
35000
30000
25000
20000
15000
10000
5000
0
( B
Yen
)
Intel Samsung TI RunesusToshiba TSMC NECEL
Good Profit
JEITA;IC Handbook
ProfitRevenue
Japanese makerSmaller profit
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8)Huge development and production cost.
Leading edge company will pay the cost.
Otherwise they will drop off from the existent race, and the competitor will be very happy.
2nd and 3rd tier companies could enjoy the reduced cost of the development and production, but no big profit.They cannot be too late to proceed to the downsizing, because China will catch up soon.
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Future
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Post Scaling Issue
2030
3 nm
Gate length
Post scaling period
?
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Anyway, we will reach the downsizing limit in 15- 20 years.
It will not happen, suddenly: “There is no downsizing from tomorrow and you do not need to come to company from tomorrow”
Probably, period of each generation, or node will becomes longer and downsizing eventually approaches to the limitation.
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After the limit of downsizing?
No, technology node change, and then, no design of new microprocessors?
Same lithography mask can be used for many years?
Same equipment can be used for many years?
2nd, 3rd companies and counties reach to make the most advanced microprocessors with cheap cost?
Then, price of microprocessors and even equipments becomes extremely cheap?
It will be a very good thing for microprocessor users. However, will it be a very serious crisis for advanced countries and companies in semiconductor?
If there is no more downsizing, the semiconductor engineers will lose their jobs?
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There are many jobs after the downsizing.
Technologies of the introduction of new material, new process, new structure, will not be completed in 15 years.Note that introduction of new materials usually take more than 10 years.
There are also other many works remain: Hybrid integration, 3D integration, Miniaturization of board.Efficient algorithm for system.
There would be a revolution for manufacturing process Do we need big CR? What would be a wafer in future? Is it the same as it is now?
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Scaling proceeds
Siz
e (G
ate
length
etc
)
Saturation of Downsizing
2020?
5 nm
?
New Materials, New Process, New Structure ( Logic, Memory)
Hybrid integration of different functional Chip Increase of SOC functionality
3D integration of memory cell3D integration of logic devices
Low cost for LSI processRevolution for CR, Equipment, Wafer
Miniaturization of Interconnects on PCB(Printed Circuit Board)
Introduction of algorithmof bio-system
Brain of insects, human
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Thank you for your attention!