001-96132owner: skrg rev *a tech lead: ewoo 1mb quad spi nvsram quick presentation 1 quick...

001-96132 Owner: SKRGRev *A Tech lead: EWOO

1Mb Quad SPI nvSRAM Quick Presentation1

Quick Presentation:

1Mb Quad SPI nvSRAM

Eliminate Batteries and Reduce Pin Count While Maintaining High-Speed Nonvolatile RAM Performance

Title



Cypress: No. 1 in NOR Flash, SRAM, NVRAMComparison to Competitors’ Memory Product Portfolios

Cypress has the broadest portfolio of high-performance memories for embedded systems

Product Category Cypress Competitors Performance Advantage

Metrics

ISSI Micron Toshiba Winbond Macronix Fujitsu

No. 1 NOR Flash

Parallel NOR Flash Highest Read Bandwidth Fastest Program/Erase

102 MBps

Serial NOR Flash Highest Read Bandwidth Fastest Program/Erase

160 MBps

HyperFlash™1 Highest Read Bandwidth 333 MBps

No. 1 SRAM

QDR®-IV Synchronous SRAM Highest RTR (random

transaction rate)2.1 GT/s

Asynchronous SRAM with ECC2 Highest reliability <0.1 FIT3

MicroPower SRAM Lowest standby current 1.5 µA

No. 1 NVRAM

Serial F-RAM™4 Lowest standby current 100 µA

Parallel nvSRAM5 Fastest NVRAM6 20 ns

AGIGARAM®7 Highest-density NVRAM6 16GB

1 A Cypress NOR Flash Memory product family that offers higher bandwidth than Quad SPI NOR Flash Memory with one-third the number of pins of parallel NOR Flash Memory2 Error-correcting code 3 Failures In Time (billion hours) 4 Ferroelectric RAM

5 Nonvolatile SRAM6 Nonvolatile memory that provides direct access to read and write to any memory location in any random order7 A Cypress brand name

Market Positioning



nvSRAM PortfolioHigh Density | High Speed

64

Kb

-25

6K

b5

12

Kb

-16

Mb

1 Open NAND flash interface2 Industrial grade -40ºC to +85ºC3 Real-time clock

Parallel nvSRAM SPI nvSRAM I2C nvSRAMParallel nvSRAM SPI nvSRAM I2C nvSRAM

CY14B116K/L16Mb; 3.0 V

25, 45 ns; x8; Ind2

RTC3

CY14B116R/S16Mb; 3.0 V

25, 45 ns; x32; Ind2

RTC3

CY14V116F/G16Mb; 3.0, 1.8 V I/O

30 ns; ONFI1 1.0x8, x16; Ind2

CY14B116M/N16Mb; 3.0 V

25, 45 ns; x16; Ind2

RTC3

CY14B108K/L8Mb; 3.0 V

25, 45 ns; x8; Ind2

RTC3

CY14B104K/LA4Mb; 3.0 V

25, 45 ns; x8; Ind2

RTC3

CY14B101KA/LA1Mb; 3.0 V

25, 45 ns; x8; Ind2

RTC3

CY14V101LA1Mb; 3.0, 1.8 V I/O25, 45 ns; x8; Ind2

CY14B256KA/LA256Kb; 3.0 V

25, 45 ns; x8; Ind2

RTC3

CY14V/U256LA256Kb; 3.0, 1.8V I/O

35 ns; x8; Ind2

CY14B108M/N8Mb; 3.0 V

25, 45 ns; x16; Ind2

RTC3

CY14B104M/NA4Mb; 3.0 V

25, 45 ns; x16; Ind2 RTC3

CY14E256LA256Kb; 5.0 V

25, 45 ns; x8; Ind2

CY14V104LA4Mb; 3.0, 1.8 V I/O25, 45 ns; x8; Ind2

CY14B101MA/NA1Mb; 3.0 V

25, 45 ns; x16; Ind2 RTC3

CY14V101NA1Mb; 3.0, 1.8 V I/O25, 45 ns; x16; Ind2

CY14V104NA4Mb; 3.0, 1.8 V I/O25, 45 ns; x16; Ind2

CY14B064P64Kb; 3.0 V

40 MHz SPI; Ind2 RTC3

CY14B256P256Kb; 3.0 V

40 MHz SPI; Ind2

RTC3

CY14B512P512Kb; 3.0 V


CY14B101P1Mb; 3.0 V


CY14B064I64Kb; 3.0 V

3.4 MHz I2C; Ind2 RTC3

CY14B256I256Kb; 3.0 V


CY14B512I512Kb; 3.0 V


CY14B101I1Mb; 3.0 V


STK11C68-564Kb; 5.0 V

35, 55 ns; x8; Mil7

STK12C68-564Kb; 5.0 V

35, 55 ns; x8; Mil7

STK14C88-5256Kb; 5.0 V

35, 45 ns; x8; Mil7

4 Double Data Rate5 Quad serial peripheral interface6 Extended Industrial grade -40ºC to +105º

CY14V101QS1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind2

Ext. Ind6

CY14V101PS1Mb; 3.0, 1.8 V I/O

108 MHz QSPI5; Ind2 Ext. Ind6; RTC3

Higher DensitiesQSPI5 nvSRAM NDA RequiredContact Sales

Higher DensitiesDDRx4 nvSRAM NDA RequiredContact Sales

Production Development

QQYYQQYYAvailability

Sampling ConceptStatus

NEW NEW

7 Military grade -55ºC to +125ºC

Roadmap



1Mb Quad SPI nvSRAM

Computing and networkingIndustrial automationRAID1 storage

Applications

Quad SPI2 interface: 108 MHzUnlimited write endurance3

One million store cycles on power failData retention of 20 years at 85ºCOperating voltages: 3.0 V, 1.8-V I/OLow standby (280-µA) and sleep (10-µA) currentsIndustrial temperature range: -40ºC to +85ºCExtended Industrial temperature range: -40ºC to +105ºCIntegrated, high-accuracy real-time clock (RTC)Package: 16-SOIC, 24-BGA

Features

Preliminary Datasheet: Contact Sales

Collateral

Block Diagram

Sampling: Q3 2015Production: Q4 2015

Availability

Power Control

VCAP5

Store/Recall Control

HSB6

Recall

Store

I/O Control

Software Command

Detect

QSPI I/Os

1Mb Quad SPI nvSRAM

4

RTCXIN4

XOUT4

3 The number of times a nonvolatile memory cell can be rewritten before it wears out4 Crystal connections5 External capacitor connection6 Hardware store busy

VRTC

SONOS Array

SRAM Array

Control Logic

2Control

1 Redundant array of independent disks: A storage technology that uses two or more disk drives for redundancy2 A high-speed interface that combines four individual SPI channels to increase serial bus bandwidth

Product Overview



Here’s How to Get Started

1. Download our App Notes: Cypress Nonvolatile Products App Notes

2. Register to access online technical support

3. Visit the Cypress nonvolatile product web page to learn more

RAID Cardby LSI Logic

Routerby Cisco

Programmable Logic Controller by Keyence

Getting Started

001-96132owner: skrg rev *a tech lead: ewoo 1mb quad spi nvsram quick presentation 1 quick...

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