wp482p9078uh 78wrfganpowertransistor - wavepia · wp482p9078uh 78wrfganpowertransistor product...
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WP482P9078UH78W RF GaN Power Transistor
Product Features
• Up to 5 GHz Operation
• 12.9 dB Small Signal Gain at 2.9 GHz
• 103 W Typical Psat.
• 53.8 % Efficiency at Psat.
• 48 V Operation
Applications
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application
AbsoluteMaximumRatings
Parameter
Drain-Source Voltage
Symbol
VDSS
Rating
160
Units
Volts
Conditions
25˚C
Gate-to-Source Voltage3 VGS -10, +2 Volts 25˚C
Storage Temperature3 TSTG -65, +150 ˚ C
Operating Junction Temperature1,3 TJ 225 ˚ C
Maximum Forward Gate Current3 IGMAX 30 mA 25˚C
Maximum Drain Current2 IDMAX 1 A Id@ Vd =10V, Vg= 1V
Soldering Temperature3 TS 245 ˚ C
Storage Temperature3 TSTG -65, +150 ˚ C
Note:
1. Continuous use at maximum temperature will affect MTTF.
2. Current limit for long term, reliable operation
3. After additional updates
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Note:
1. Measured on wafer prior to packaging.
2. Scaled from PCM data.
DC Characteristics1(TC = 25˚C)
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
MIN TYP
-2.9
MAX Units
VDC
Conditions
VDS = 10 V, ID = 1 mA
Gate Quiescent Voltage VGS(Q) -2.88 VDC VDS = 48 V, ID = 200 mA
Saturated Drain Current2
IDS 1000 mA/mm VDS = 10 V, VGS = 1 V
Drain-Source Breakdown Voltage VBR 160 VDC ID = 1 mA/mm
RF Characteristics (TC = 25˚C, F0 = 2.95 GHz unless otherwise noted)
Note:
1. Drain Efficiency = POUT / PDC
Parameter Symbol MIN TYP MAX Units Conditions
PowerGain GSat 9.37 dBVDD = 4 8 V, IDQ = 200 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Saturated Output Power PSAT103 W
VDD = 4 8 V, IDQ = 200 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Pulsed Drain Efficiency1
η 53.8 %VDD = 4 8 V, IDQ = 200 mA, Pulse Width = 100
usec, Duty Cycle = 10% @ Psat
Output Mismatch Stress VSWR - - 10:1No damage at all phase angles, VDD = 48 V, IDQ = 200
mA, POUT = 78 W CW
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Pulse Signal Performance (Tc=25℃, Measured in the test board amplifier circuit)VDD = 48 V, IDQ = 200 mA, PulseWidth = 100μsec, Duty Cycle = 10%
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Smal Signal Performance (Tc=25℃, Measured in the test board amplifier circuit)
VDD = 48 V, IDQ = 200mA
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Demonstration board
Reference Number Value Items Package Manufacturer
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*PCB RO4350B 30mil 1oz
Partnumbercode
W P 4 8 2P 9078 U H
Frequency (GHz)
S (Surface),H (Screw Hole)
M (Matched),U(Unmatched)
Power(Watt)
Drain Voltage (DC)
#1301, 557, Dongtangiheung-ro,
Hwaseong-si , Gyeonggi-do,
South Korea
Tel : 82-31-8058-3374
82-31-8058-3384
Fax : 82-31-8058-3302
E-mail : [email protected]
Website: www.wavepia.com