wiley-vch - gbv1956 contents high electron concentrations in si-doped aln/algan superlattices with...
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conferences and critical reviews
Editor-in-Chief
Martin Stutzmann, Garching
Regional Editors
Martin S. Brandt, GarchingPeter Deak, BudapestJose Roberto Leite, Sao PauloJohn I. B. Wilson, Edinburgh
Managing Editor
Stefan Hildebrandt, Berlin
Proceedings
5th International Conference onNitride Semiconductors (ICNS-5)
Nara, Japan25-30 May 2003
Guest Editors
Hiroshi Amano and Takashi Udagawa
0 7 2003
TECHNISCHE jINFORMATIONSBIBLIOTHEK j
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Contents
Visit our homepage on: http://www.physica-status-solidi.comFull text on: http://www.interscience.wiley.com
This Table of Contents is organized thematically according to the topics presented at the confer-ence. Please note that papers with page numbers marked (a) and (b) are reprinted from phys.stat. sol. (a) 200, No. 1, 9-208 (2003) and phys. stat. sol. (b) 240, No. 2, 273-460 (2003), respec-tively. You may find papers with phys. stat. sol. (a), (b), and (c) citations in the three sections ofthis volume, separated by coloured sheets for easy orientation.
Preface 1977
Committees 1978
Bulk crystals
Bulk GaN crystals grown at high pressure as substrates for blue-laser technologyR. Czernetzki, M. Leszczynski, I. Grzegory, P. Perlin, P. Prystawko, C. Skierbiszewski,M. Krysko, M. Sarzynski, P. Wisniewski, G. Nowak, A. Libura, S. Grzanka, T. Suski,L. Dmowski, E. Litwin-Staszewska, M. Bockowski, and S. Porowski (a) 9-12
Fast growth of high quality GaND. Gogova, H. Larsson, R. Yakimova, Z. Zolnai, I. Ivanov, and B. Monemar (a) 13-17
Free-standing HVPE-GaN layersH. Larsson, D. Gogova, A. Kasic, R. Yakimova, B. Monemar, C. R. Miskys, andM. Stutzmann (c) 1985-1988
Characteristics of semi-insulating, Fe-doped GaN substratesRobert P. Vaudo, Xueping Xu, Allan Salant, Joseph Malcarne, and George R. Brandes . . (a) 18-21
A1N substrates: fabrication via vapor phase growth and characterizationYu. Melnik, V. Soukhoveev, V. Ivantsov, V. Sizov, A. Pechnikov, K. Tsvetkov,O. Kovalenkov, V. Dmitriev, A. Nikolaev, N. Kuznetsov, E. Silveira, and J. Freitas Jr. . . (a) 22-25
Role of oxygen in A1N sublimation growthS. Yu. Karpov, A. V. Kulik, I. N. Przhevalskii, M. S. Ramm, and Yu. N. Makarov . . . . (c) 1989-1992
PVT growth of bulk A1N crystals with low oxygen contaminationM. Bickermann, B. M. Epelbaum, and A. Winnacker (c) 1993-1996
Fabrication of native, single-crystal A1N substratesL. J. Schowalter, G. A. Slack, J. B. Whitlock, K. Morgan, S. B. Schujman,B. Raghothamachar, M. Dudley, and K. R. Evans (c) 1997-2000
Epitaxial growth
GaN-based epitaxy on silicon: stress measurementsA. Krost, A. Dadgar, G. Strassburger, and R. Clos (a) 26-35
High-quality quaternary AlInGaN epilayers on sapphireYang Liu, Takashi Egawa, Hiroyasu Ishikawa, and Takashi Jimbo (a) 36-39
1956 Contents
High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al contentof 80%
Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura, Toshiki Makimoto, andNaoki Kobayashi (a) 40-43
Growth of GaN on porous SiC and GaN substratesC. K. Inoki, T. S. Kuan, A. Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz,P. W. Bohn, and I. Adesida (a) 44-47
Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sap-phire substrates
W. H. Sun, E. Kuokstis, M. Gaevski, J. P. Zhang, C. Q. Chen, H. M. Wang, J. W. Yang,G. Simin, M. Asif Khan, R. Gaska, and M. S. Shur (a) 48-51
Growth and photoluminescence of InAlGaN filmsDa-Bing Li, Xun Dong, Jinsong Huang, Xianglin Liu, Zhongying Xu, and Zhanguo Wang. (c) 2001 -2005
Two-step temperature ramping technique in MOCVD GaN films with high electromechanicalcoupling coefficients
Jae-Hoon Lee, Ki-Yeol Park, Sung-Bum Bae, Doo-Hyeb Youn, Kyu-Seok Lee,Chang-Min Jeon, Ho-Won Jang, Jong-Lam Lee, Hyung-Koun Cho, Myoung-Bok Lee,Sung-Ho Hahm, Young-Hyun Lee, and Jung-Hee Lee (c) 2006-2009
Si doping effects on the electrical and structural properties of high Al composition Al^Ga^Nfilms grown by MOCVD
P. Cantu, S. Keller, F. Wu, P. Waltereit, A. E. Romanov, U. K. Mishra, J. S. Speck, andS.P. DenBaars (c) 2010-2013
X-ray characterization of high quality A1N epitaxial layers: effect of growth condition on layerstructural properties
Q. S. Paduano, A. J. Drehman, D. W. Weyburne, J. Kozlowski, J. Serafinczuk, J. Jasinski,and Z. Liliental-Weber (c) 2014-2018
MOCVD growth and optical investigation of the AlInGaN quaternary systemT. Wang, P. J. Parbrook, and M. A. Whitehead (c) 2019-2022
High-quality A1N epitaxial films on (OOOl)-faced sapphire and 6H-SiC substrateT. Shibata, K. Asai, S. Sumiya, M. Mouri, M. Tanaka, O. Oda, H. Katsukawa, H. Miyake,and K. Hiramatsu (c) 2023-2026
Lattice-matched boronphosphide (BP)/hexagonal GaN heterostructure for inhibition of disloca-tion penetration
T. Udagawa, M. Odawara, and G. Shimaoka (c) 2027-2030
Surface treatment of GaN and InN usingT. Maruyama, K. Yorozu, T. Noguchi, Y. Seki, Y. Saito, T. Araki, and Y. Nanishi . . . . (c) 2031 -2034
Lattice dynamics and Raman spectra of strained hexagonal GaN/AIN and GaN/AlGaN superlat-tices
V. Yu. Davydov, A. N. Smirnov, M. B. Smirnov, S. V. Karpov, I. N. Goncharuk,R. N. Kyutt, M. V. Baidakova, A.V. Sakharov, E. E. Zavarin, W. V. Lundin, H. Harima,andK. Kisoda (c) 2035-2038
The role of the growth temperature for the SiN interlayer deposition in GaNTimBottcher, Jens Dennemarck, Roland Kroger, Stephan Figge, and DetlefHommel . . . (c) 2039-2042
The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown ona (111) Si substrate by selective MOVPE
Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, andN. Sawaki (c) 2043-2046
Contents 1957
Strain effects on Auger electron spectroscopy in different regions of epitaxial-lateral-overgrowthGaN
Duanjun Cai and Junyong Kang (c) 2047-2050
Characterization of MOVPE grown AIN/GaN heterointerfaces by grazing incidence X-ray reflec-tivity. Alloy formation at heterointerfaces
Masanobu Hiroki and Naoki Kobayashi (c) 2051-2054
Crack formation and development in AlGaN/GaN structuresP. J. Parbrook, T. Wang, M. A. Whitehead, C. N. Harrison, R. J. Lynch, and R. T. Murray . (c) 2055-2058
Growth of GaN and InGaN layers by rapid thermal MOCVDO. Kreinin, G. Bahir, and J. Salzman (c) 2059-2062
Novel growth technique for the reducing dislocation density in GaN on sapphire substrateT. Kunisato, Y. Nomura, H. Ohbo, T. Kano, N. Hayashi, M. Hata, T. Yamaguchi,M. Shono, M. Sawada, and A. Ibaraki (c) 2063-2066
Evolution of A1N buffer layers on silicon and effects on the properties of epitaxial GaN filmsK. Y. Zang, S. J. Chua, L. S. Wang, and C. V. Thompson (c) 2067-2071
Growth of Al^Ga^N and GaN on photo-electrochemically patterned SiC substratesU. Ahrend, U. Rossow, N. Riedel, M. Greve, F. Hitzel, and A. Hangleiter (c) 2072-2076
Growth and evaluation of GaN with SiN interlayer by MOCVDYoshiki Naoi, Toshihiko Tada, Hongdong Li, Nan Jiang, and Shiro Sakai (c) 2077-2081
InGaN self-organized quantum dots grown by metalorganic chemical vapour deposition(MOCVD)
L. S. Wang, S. J. Chua, K. Y. Zang, and S. Tripathy (c) 2082-2086
Direct observation of hillocks on pendeo-epitaxial GaN films and stabilization of GaN seed layersfor hillock-free surface
H. S. Cheong, C. S. Park, C.-H. Hong, and H. K. Cho (c) 2087-2090
Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPEM. Miyoshi, H. Ishikawa, T. Egawa, and T. Jimbo (c) 2091 -2094
Effect of growth temperature and Si doping on the microstructure of GaN thin films grown onhigh temperature GaN
Kwang Suk Son, Dongyu Kim, Hyung Koun Cho, Kyuhan Lee, Sunwoon Kim,Keunseop Park, and Junho Kim (c) 2095-2098
Effects of deposition parameters of low-temperature GaN layer on the structural and optical prop-erties of cubic GaN epilayers grown on GaAs(OOl) substrates by MOVPE
Mutsumi Sugiyama, Taiki Nosaka, Kiyomi Nakajima, Parhat Ahmet, Toyomi Aoyama,Toyohiro Chikyow, and Shigefusa F. Chichibu (c) 2099-2102
Smart Cut™ SiCOI wafers for MBE GaN epitaxyF. Letertre, J. Brault, I. Matko, F. Enjalbert, E. Bellet-Amalric, G. Feuillet, C. Richtarch,B. Faure, L. DiCioccio, R. Madar, B. Daudin, and E. Monroy (c) 2103-2106
Low-dislocation density AlGaN layer by air-bridged lateral epitaxial growthYasutoshi Kawaguchi, Gaku Sugahara, Atsunori Mochida, Toshitaka Shimamoto,Akihiko Ishibashi, and Toshiya Yokogawa (c) 2107-2110
Annealing effects of ZnO films deposited on (0001) A12O3 and (111) Si substrate by RF sputter-ing and GaN layer grown on ZnO films used as buffer layer by MOCVD
S.-R. Jeon, M.-A. Yu, S. K. Shim, G. M. Yang, and S. J. Son (c) 2111-2115
Contents
f properties of InGaN based multiple quantum wells on low threading dislocation densityGaN films fabricated by air-bridged lateral epitaxial growth
A. Ishibashi, G. Sugahara, Y. Kawaguchi, Y. Yamada, T. Taguchi, and T. Yokogawa . . . (c) 2116-2119
Characterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vaporphase epitaxy
K. Kusakabe and K. Ohkawa (c) 2120-2123
Growth of homoepitaxial Ill-nitride layers on bulk GaN single crystals by molecular-beam epitaxyS. Iwata, S. Kubo, M. Konishi, T. Saimei, S. Kurai, T. Taguchi, K. Kainosho, andA. Yokohata (c) 2124-2127
MOVPE growth and n-type conductivity control of high-quality Si-doped Al0 5Ga0 5N using epi-taxial A1N as an underlying layer
Yoshihiro Kida, Akira Iishiga, Tomohiko Shibata, Hiroyuki Naoi, Hideto Miyake,Kazumasa Hiramatsu, and Mitsuhiro Tanaka (c) 2128-2131
Structural and electrical characterization of a-plane GaN grown on a-plane SiCM. D. Craven, A. Chakraborty, B. Imer, F. Wu, S. Keller, U. K. Mishra, J. S. Speck,and S. P. DenBaars (c) 2132-2135
Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowthR. Liu, A. Bell, F. A. Ponce, H. Amano, I. Akasaki, and D. Cherns (c) 2136-2140
Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion oflow-temperature GaN buffer layers
H. Murakami, N. Kawaguchi, Y. Kangawa, Y. Kumagai, and A. Koukitu (c) 2141-2144
Comparison of the material properties of GalnN structures grown with ammonia and dimethyl-hydrazine as nitrogen precursors
V. Perez-Solorzano, B. Santic, A. Groning, M. Jetter, M. Seip, H. Schweizer, and F. Scholz (c) 2145-2149
Growth of crack-free high-quality GaN on Si(l l l) using a low-temperature A1N interlayer: ob-servation of tilted domain structures in the A1N interlayer
Min-Ho Kim, Young-Gu Do, Hyon Choi Kang, Chel-Jong Choi, Do Young Noh,Tae-Yeon Seong, and Seong-Ju Park (c) 2150-2153
The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growthTetsuo Narita, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, andNobuhiko Sawaki (c) 2154-2158
Growth of high-quality GaN on FACELO substrate by raised-pressure HVPES. Bohyama, K. Yoshikawa, H. Naoi, H. Miyake, K. Hiramatsu, and T. Maeda (c) 2159-2162
The surface treatment of sapphire substrate and its effects on the initial stage of GaN growth byMOVPE
M. Tsuda, K. Watanabe, S. Kamiyama, H. Amano, and I. Akasaki (c) 2163-2166
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patternedshape mask
G. Feng, X. M. Shen, J. J. Zhu, B. S. Zhang, H. Yang, and J. W. Liang (c) 2167-2170
Influence of growth kinetics on the indium distribution during MOVPE growth of GalnN quan-tum wells
E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, F. Scholz, M. Vehse, and J. Gutowski . . . . (c) 2171-2176
Growth of GaN on 4-inch Si substrate with a thin AlGaN/AIN intermediate layerH. Ishikawa, M. Kato, M. S. Hao, T. Egawa, and T. Jimbo (c) 2177-2180
Contents 1959
Effect of Al content on the microstructure in GaN grown on Si by MOVPEX. Chen, M. Ishiko, Y. Kuroiwa, and N. Sawaki (c) 2181-2184
Light emitting diodes
Recent progress of nitride-based light emitting devicesT. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa,S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou,H. Tamaki, Y. Murazaki, and M. Kameshima (a) 52-57
Fabrication of LED based on III-V nitride and its applicationsNaoki Shibata, Toshiya Uemura, Hisao Yamaguchi, and Takemasa Yasukawa (a) 58-61
Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and lightemitting diodes
H. W. Shim, E.-K. Suh, C.-H. Hong, Y.-W. Kim, and H. J. Lee (a) 62-66
Violet and UV light-emitting diodes grown on ZrB2 substrateS. Kamiyama, S. Takanami, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, M. Iwaya,H. Kinoshita, T. Matsuda, T. Yasuda, S. Otani, H. Amano, and I. Akasaki (a) 67-70
Advanced characterization studies of sapphire substrate misorientation effects on GaN-basedLED device development
D. Lu, D. I. Florescu, D. S. Lee, V. Merai, A. Parekh, J. C. Ramer, S. P. Guo, andE. Armour (a) 71-74
GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiencyChristoph M. Zellweger, Julien Dorsaz, Jean-Francois Carlin, Hans-Jorg Buhlmann,Ross P. Stanley, and Marc Ilegems (a) 75-78
A novel fabrication method for a 64 x 64 matrix-addressable GaN-based micro-LED arrayC.-W. Jeon, H. W. Choi, and M. D. Dawson (a) 79-82
Heat generation and dissipation in GaN-based light emitting devicesStephan Figge, Tim Bottcher, Detlef Hommel, Christoph Zellweger, and Marc Ilegems . . (a) 83-86
High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surfaceYoung-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi, and Shiro Sakai (a) 87-90
High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottkydiodes
Chin-Hsiang Chen, Shoou-Jinn Chang, and Yan-Kuin Su (a) 91-94
Demonstration of high-efficient InGaN-based violet light-emitting diodes with an external-quantum efficiency of more than 40%
Hiromitsu Kudo, Youichiro Ohuchi, Takahide Jyouichi, Takashi Tsunekawa,Hiroaki Okagawa, Kazuyuki Tadatomo, Yasuhide Sudo, Munehiro Kato, andTsunemasa Taguchi (a) 95-98
Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodesA. Chitnis, V. Adivarahan, J. P. Zhang, M. Shatalov, S. Wu, J. Yang, G. Simin,M.AsifKhan,X. Hu, Q. Fareed, R. Gaska,andM. S. Shur (a) 99-101
High efficiency AlGalnN-based light emitting diode in the 360-380 nm wavelength rangeHisao Sato, Hong-Xing Wang, Daisuke Sato, Ryohei Takaki, Naoki Wada,Tetsuya Tanahashi, Kenji Yamashita, Shunsuke Kawano, Takashi Mizobuchi,Akihiko Dempo, Kenji Morioka, Masahiro Kimura, Suguru Nohda, Tomoya Sugahara,and Shiro Sakai (a) 102-105
1960 Contents
340-350 nm GaN-free UV-LEDsT.Nishida,T. Ban, and N. Kobayashi (a) 106-109
Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaNM. Iwaya, S. Takanami, A. Miyazaki, T. Kawashima, K. Iida, S. Kamiyama, H. Amano,andl. Akasaki (a) 110-113
Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structureDaisuke Morita, Masahiko Sano, Masashi Yamamoto, Mitsuhiro Nonaka,Katsuhiro Yasutomo, Kazuyuki Akaishi, Shin-ichi Nagahama, and Takashi Mukai . . . . (a) 114-117
InGaN light emitting diodes of micro-ring geometryH. W. Choi, C. W. Jeon, and M. D. Dawson (c) 2185-2188
Oxidation treatment on Ni/Au Ohmic contacts to p-type GaNZ. Z. Chen, Z. X. Qin, X. D. Hu, T. J. Yu, B. Zhang, Z. J. Yang, Y. Z. Tong, X. M. Ding,and G.Y.Zhang (c) 2189-2192
Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxyHitoshi Sato, Patrick Waltereit, Daniel S. Green, Christiane Poblenz, Thomas Katona,Steven P. DenBaars, James S. Speck, Hitoshi Tamura, and Chihiro Funaoka (c) 2193-2197
Electroluminescence efficiency of InGaN light emitting diodes: dependence on AlGaN:Mgelectron blocking layer width and Mg doping profile
T. Stephan, K. Kohler, M. Kunzer, P. Schlotter, and J. Wagner (c) 2198-2201
Analysis of quantum efficiency of high brightness GalnN/GaN quantum wellsS. Lahmann, F. Hitzel, U. Rossow, and A. Hangleiter (c) 2202-2205
336 nm ultraviolet LEDs grown with A1N interlayers for strain reductionT. M. Katona, M. C. Schmidt, T. Margalith, C. Moe, H. Tamura, H. Sato, C. Funaoka,R. Underwood, S. Nakamura, J. S. Speck, and S. P. DenBaars (c) 2206-2209
Low resistivity contacts to p-type GaN by plasma treatmentH. W. Choi, C. W. Jeon, and M. D. Dawson (c) 2210-2213
Influence of excited states of Mg acceptors on hole concentration in GaNH. Matsuura, D. Katsuya, T. Ishida, S. Kagamihara, K. Aso, H. Iwata, T. Aki,S.-W. Kim, T. Shibata, and T. Suzuki (c) 2214-2218
Vertical InGaN-based blue light emitting diode with plated metal base fabricated using laser lift-off technique
Tetsuzo Ueda, Masahiro Ishida, Satoshi Tamura, Yasuhiro Fujimoto, Masaaki Yuri,Takeshi Saito, and Daisuke Ueda (c) 2219-2222
Low-energy electron-beam irradiation of GaN-based quantum well structuresU. Jahn, S. Dhar, H. Kostial, I. M. Watson, and K. Fujiwara (c) 2223-2226
High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrodeC. S. Chang, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, C. K. Wang, Y. C. Lin,Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu (c) 2227-2231
Laser controlled thermocracking die separation technique for sapphire substrate based devicesV. Kondratenko, S. Tchernykh, and P. Gindin (c) 2232-2235
GalnNP MQW structure LED grown by laser-assisted MOCVDS. Yoshida, J. Li, and Y. Itoh (c) 2236-2239
Magnesium diffusion in wurtzite-type GaN crystalK. Harafiiji, T. Tsuchiya, and K. Kawamura (c) 2240-2243
Contents 1961
InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template by metalorganicchemical vapor deposition
Baijun Zhang, Takashi Egawa, Yang Liu, Hiroyasu Ishikawa, and Takashi Jimbo (c) 2244-2247
Effects of Mg fluctuation on the electrical and optical properties in p-GaN/undoped GaN layersdependent on the growth temperature
C. S. Kim, H. K. Cho, C.-H. Hong, E.-K. Suh, and H. J. Lee (c) 2248-2252
MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substratesS. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen,S. C. Shei, C. W. Kuo, and D. H. Fang (c) 2253-2256
InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodesChin-Hsiang Chen, Shoou-Jinn Chang, and Yan-Kuin Su (c) 2257-2260
Thermal analysis and design of GaN-based LEDs for high power applicationsL. Kim, G. W. Lee, W. J. Hwang, J. S. Yang, and M. W. Shin (c) 2261-2264
Indium-free violet LEDs grown by HVPEA. S. Usikov, D. V. Tsvetkov, M. A. Mastro, A. I. Pechnikov, V. A. Soukhoveev,Y. V. Shapovalova, O. V. Kovalenkov, G. H. Gainer, S. Yu. Karpov, V. A. Dmitriev,B. O'Meara, S. A. Gurevich, E. M. Arakcheeva, A. L. Zakhgeim, and H. Helava (c) 2265-2269
High brightness blue and green light emitting quantum wells with graded-In-content profilegrown by MOCVD
Yuanping Sun, Yong-Hoon Cho, E.-K. Suh, H. J. Lee, R. J. Choi, and Y. B. Hahn . . . . (c) 2270-2273
Preparation of AlN:Mn films by metalorganic chemical vapor deposition for thin film electro-luminescent devices
K. Hara, A. Sato, K. Azumada, T. Atsumori, and M. Shiratori (c) 2274-2277
Laser diodes
Ultraviolet InAlGaN multiple-quantum-well laser diodesMichael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita, and Noble M. Johnson (a) 118-121
Super high-power AlGalnN-based laser diodes with a single broad-area stripe emitter fabricatedon a GaN substrate
Shu Goto, Makoto Ohta, Yoshifumi Yabuki, Yukio Hoshina, Kaori Naganuma,Koshi Tamamura, Toshihiro Hashizu, and Masao Ikeda (a) 122-125
Room-temperature operation of GaN-based blue-violet laser diodes fabricated on sapphire sub-strates using high-temperature-grown single-crystal A1N buffer layers
YasuoOhba (a) 126-130
AlGalnN violet laser diodes grown on GaN substrates with low aspect ratioShigetoshi Ito, Yukio Yamasaki, Susumu Omi, Kunihiro Takatani, Toshiyuki Kawakami,Tomoki Ohno, Masaya Ishida, Yoshihiro Ueta, Takayuki Yuasa, and Mototaka Taneya . . (a) 131 -134
Influence of the carrier density on the optical gain and refractive index change in InGaN laserstructures
M. Rowe, P. Michler, J. Gutowski, V. Kummler, A. Lell, and V. Harle (a) 135-138
Defects in degraded GaN-based laser diodesShigetaka Tomiya, Shu Goto, Motonobu Takeya, and Masao Ikeda (a) 139-142
Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasersU. T. Schwarz, E. Sturm, W. Wegscheider, V. Kummler, A. Lell, and V. Harle (a) 143-146
1962 Contents
Recent progress of high power GaN-based violet laser diodesO. H. Nam, K. H. Ha, J. S. Kwak, S. N. Lee, K. K. Choi, T. H. Chang, S. H. Chae,W. S. Lee, Y. J. Sung, H. S. Paek, J. H. Chae, T. Sakong, and Y. Park (c) 2278-2282
Time resolved study of laser diode characteristics during pulsed operationChristoph Eichler, Sven-Silvius Schad, Matthias Seyboth, Frank Habel, Marcus Scherer,Stephan Miller, Andreas Weimar, Alfred Lell, Volker Harle, and Daniel Hofstetter . . . . (c) 2283-2286
Coupling of optical modes in GaN-based laser-diodesS. Einfeldt, S. Figge, T. Bottcher, and D. Hommel (c) 2287-2291
Degradation in AlGalnN lasersMotonobu Takeya, Takashi Mizuno, Tomomi Sasaki, Shinro Ikeda, Tsuyoshi Fujimoto,Yoshio Ohfuji, Kenji Oikawa, Yoshifumi Yabuki, Shiro Uchida, and Masao Ikeda . . . . (c) 2292-2295
Analysis of self-pulsation characteristics of InGaN laser diodeV. Z. Tronciu, Minoru Yamada, Tomoki Ohno, Shigetoshi Ito, Toshiyuki Kawakami, andMototaka Taneya (c) 2296-2299
The fabrication of GaN-based optical cavity mirrors by focused ion beam millingQian Ren, Bei Zhang, Jun Xu, Yan Bo Jin, Zhi Jian Yang, Xiao Dong Hu, Zhi Xin Qin,Zhi Zhong Chen, Xiao Min Ding, Yu Zhen Tong, Zhen Sheng Zhang, Guo Yi Zhang,Da Peng Yu, and Zi Zhao Gan (c) 2300-2303
Comparative study between laser performance and carrier lifetime of 400 nm emittingGalnN/GaN laser diodes
C. Netzel, S. Heppel, F. Hitzel, S. Miller, A. Weimar, G. Briiderl, H. J. Lugauer, A. Lell,V. Harle, and A. Hangleiter (c) 2304-2308
Photo detectors
Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the softX-ray (SX) region (10-100 nm)
Atsushi Motogaito, Hironobu Watanabe, Kazumasa Hiramatsu, Kazutoshi Fukui,Yutaka Hamamura, and Kazuyuki Tadatomo (a) 147-150
High performance Schottky UV detectors (265-100 nm) using n-Alo.5Gao.5N on A1N epitaxiallayer
H. Miyake, H. Yasukawa, Y. Kida, K. Ohta, Y. Shibata, A. Motogaito, K. Hiramatsu,Y. Ohuchi, K. Tadatomo, Y. Hamamura, and K. Fukui (a) 151-154
Design of the layer structures for Schottky type AlGaN UV photodetectorBo-Kyun Kim, Jung-Kyu Kim, Sung-Jong Park, Heon-Bok Lee, Jae-Hoon Lee,Gi-Hong Rue, Myoung-Bok Lee, Young-Hyun Lee, Jung-Hee Lee, and Sung-Ho Hahm . . (c) 2309-2313
High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectorsN. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, and E. Ozbay (c) 2314-2317
Electron devices
Strain-engineered novel III-N electronic devices with high quality dielectric/semiconductorinterfaces
M. AsifKhan, M. S. Shur, andG. Simin (a) 155-160
High-voltage rf operation of AlGaN/GaN heterojunction FETsM. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto, and T. Nakayama (a) 161-167
Contents 1963
Doping design of GaN-based heterostructure field-effect transistors with high electron density forhigh-power applications
Narihiko Maeda, Takehiko Tawara, Tadashi Saitoh, Kotaro Tsubaki, and Naoki Kobayashi (a) 168-174
High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBEM. J. Manfra, N. G. Weimann, O. Mitrofanov, T. Waechtler, and D. M. Tennant (a) 175-178
Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on siliconsubstrate
M. Marso, P. Javorka, Y. Dikme, H. Kalisch, J. Bernat, C. Schafer, B. Schineller,A. v. d. Hart, M. Wolter, A. Fox, R. H. Jansen, M. Heuken, P. Kordos, and H. Liith . . . . (a) 179-182
Variation of structural and optical properties across an AlGaN/GaN HEMT structure directlyimaged by cathodoluminescence microscopy
F. Bertram, J. Christen, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra (a) 183-186
High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrateHideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano,Hiroyasu Ishikawa, Takashi Egawa, and Takashi Jimbo (a) 187-190
Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
R. Kiefer, R. Quay, S. Miiller, T. Feltgen, B. Raynor, J. Schleife, K. Kohler, H. Massler,S. Ramberger, F. van Raay, A. Tessmann, M. Mikulla, and G. Weimann (a) 191-194
Drain current DLTS of AlGaN/GaN HEMTsT. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, and K. Maezawa (a) 195-198
First-principle study on the structures and electronic properties of gallium nitride nanowiresYoshihiko Kawakami, Nobuyuki Higashimaki, Kentaro Doi, Koichi Nakamura, andAkitomo Tachibana (c) 2318-2322
Microwave-aided transport measurements on high-density two-dimensional electron systemsconfined at AlGaN/GaN heterointerfaces
D. R. Hang, C. F. Huang, and Y. F. Chen (c) 2323-2326
Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?Jeffrey S. Flynn, Henry Xin, Joe A. Dion, Edward L. Hutchins, Helder Antunes,Lara Fieschi-Corso, Rae Van Egas, and George R. Brandes (c) 2327-2330
AlGaN/GaN microwave HFET including a thin A1N carrier exclusion layerR. S. Balmer, K. P. Hilton, K. J. Nash, M. J. Uren, D. J. Wallis, A. Wells, M. Missous,and T.Martin (c) 2331-2334
Study on off-state breakdown in AlGaN/GaN HEMTsTakeshi Nakao, Yutaka Ohno, Shigeru Kishimoto, Koichi Maezawa, and Takashi Mizutani (c) 2335-2338
Magnetotransport measurement of effective mass, quantum scattering time, and alloy scatteringpotential of polarization-doped 3D electron slabs in graded-AlGaN
Debdeep Jena, S. Heikman, J. S. Speck, U. K. Mishra, A. Link, and O. Ambacher . . . . (c) 2339-2342
High-temperature operation of an AlGaN/GaN HFET on a Si substrate using a thin GaN filmS. Yoshida, J. Li, T. Wada, and H. Takehara (c) 2343-2346
High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage andswitching characteristics
Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura, and Kunio Tsuda (c) 2347-2350
Fabrication of AlGaN/GaN MIS-HFET using an A12O3 high k dielectricKi-Yeol Park, Hyun-Ick Cho, Jae-Hoon Lee, Sung-Bun Bae, Chang-Min Jeon,Jong-Lam Lee, Dae-Youn Kim, Chun- Soo Lee, and Jung-Hee Lee (c) 2351-2354
1964 Contents
Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2
layersC. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, and B. R. Huang (c) 2355-2359
Investigation of traps in AlGaN/GaN HEMTs on silicon substrateM. Wolter, M. Marso, P. Javorka, J. Bernat, R. Carius, H. Ltith, and P. Kordos (c) 2360-2363
Thermal effects of substrates on the performance of AlGaN/GaN HFETsJeong Park, Chin C. Lee, J. W. Kim, J. S. Lee, W. J. Hwang, and M. W. Shin (c) 2364-2367
Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphireAkira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki, Kohki Hikosaka,Toshiaki Matsui, Satoshi Hiyamizu, and Takashi Mimural (c) 2368-2371
Measurement of surface contact potential of AlGaN/GaN heterostructure and n-GaN by Kelvinprobe force microscopy
Tengfeng Xie, Shigeru Kishimoto, and Takashi Mizutani (c) 2372-2375
Thermal stability investigation of copper-gate AlGaN/GaN high electron mobility transistorsJin-Ping Ao, Naotaka Kubota, Daigo Kikuta, Yoshiki Naoi, and Yasuo Ohno (c) 2376-2379
Al2O3-based surface passivation and insulated gate structure for AlGaN/GaN HFETsTamotsu Hashizume, Shinya Ootomo, and Hideki Hasegawa (c) 2380-2384
Si(l 11) as alternative substrate for AlGaN/GaN HEMTY. Dikme, M. Fieger, F. Jessen, A. Szymakowski, H. Kalisch, J. F. Woitok,P. van Gemmern, P. Javorka, M. Marso, N. Kaluza, R. H. Jansen, and M. Heuken . . . . (c) 2385-2388
Current-voltage instabilities in GaN/AlGaN resonant tunnelling structuresC. T. Foxon, S. V. Novikov, A. E. Belyaev, L. X. Zhao, O. Makarovsky, D. J. Walker,L. Eaves, R. I. Dykeman, S. V. Danylyuk, S. A. Vitusevich, M. J. Kappers, J. S. Barnard,and C. J. Humphreys (c) 2389-2392
Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodesT. Makimoto, M. Kashiwa, T. Kido, N. Matsumoto, K. Kumakura, and N. K o b a y a s h i . . . (c) 2393-2395
Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers
W. K. Fong, B. H. Leung, C. Surya, L. W. Lu, and W. K. Ge (c) 2396-2399
Admittance characterization and analysis of trap states in AlGaN/GaN heterostructuresR. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau (c) 2400-2403
Solid C60 layer growth on A1N (0001) surface for C60 FET structure by MBED. Yokoyama, H. Nojiri, A. Yamamoto, and A. Hashimoto (c) 2404-2407
Hot-electron transport in III-V nitride based two-dimensional gasesS. A. Vitusevich, S. V. Danylyuk, B. A. Danilchenko, N. Klein, S. E. Zelenskyi,A. P. Budnik, R. V. Didenko, A. Yu. Avksentyev, V. N. Sokolov, H. Ltith,V. A. Kochelap, and A. E. Belyaev (c) 2408-2411
Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer inser-tion method
M. Sakai, T. Egawa, H. Ishikawa, and T. Jimbo (c) 2412-2415
Field emitters
Triode-type basic display structure using Si-doped A1N field emittersYoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, and Naoki Kobayashi (a) 199-201
Contents 1965
Electric field emission from nitride semiconductor grown on Mo substrateS. Nishida, T. Yamanaka, S. Hasegawa, and H. Asahi (c) 2416-2419
Characterization of crystalline properties
Microstructure and electronic properties of InGaN alloysF. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya,H. Marui, and S. Tanaka (b) 273-284
Structure analysis of ELO-GaN using a 2 x 4 urn2 micro-beam X-ray of an 8-GeV storage ringT. Miyajima, M. Takeya, S. Goto, S. Tomiya, S. Takeda, H. Kurihara, K. Watanabe,M. Kato, N. Hara, Y. Tsusaka, and J. Matsui (b) 285-288
Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulkcrystals
F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory,S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P. Hageman, and K. Saarinen (b) 289-292
Angular dependence of the in-plane polarization anisotropy in the absorption coefficient of strai-ned M-plane GaN films on y-LiAlO2
Pranob Misra, Y. J. Sun, O. Brandt, and H. T. Grahn (b) 293-296
Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electronmicroscopy
T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys . . . . (b) 297-300
Field-compensated quaternary InAlGaN/GaN quantum wellsF. Kalaitzakis, M. Androulidaki, N. T. Pelekanos, E. Dimakis, E. Bellet-Amalric,D. Jalabert, D. Cengher, K. Tsagaraki, E. Aperathitis, G. Konstantinidis, andA. Georgakilas (b) 301-304
Melting point of wurtzite-type GaN crystalK. Harafuji, T. Tsuchiya, and K. Kawamura (c) 2420-2423
Defect and emission distributions in thick HVPE-GaN layers grown on PENDEO templatesE. Valcheva, T. Paskova, B. Monemar, A. M. Roskowski, and R. F. Davis (c) 2424-2427
Raman study of the strain in GaN films by comparison with a free-standing GaNT. Inoue, Y. Toda, K. Hoshino, T. Someya, and Y. Arakawa (c) 2428-2431
Cracks and dislocation structures in AlGaN systemsI. L. Maksimov, H. D. Li, T. Sugahara, M. Tsukihara, A. Mori, and S. Sakai (c) 2432-2435
Atomic structure and energy of grain boundaries in GaNJun Chen, Pierre Ruterana, and Gerard Nouet (c) 2436-2439
Glide along non-basal slip planes in InGaN epilayersS. Srinivasan, L. Geng, F. A. Ponce, Y. Narukawa, and S. Tanaka (c) 2440-2443
TEM analysis of threading dislocations in crack-free Al^Ga^^N grown on an AlN(0001) tem-plate
N. Kuwano, T. Tsuruda, Y. Kida, H. Miyake, K. Hiramatsu, and T. Shibata (c) 2444-2447
Determination of dislocation density in epitaxially grown GaN using an HC1 etching processF. Habel and M. Seyboth (c) 2448-2451
Characterisation of nitrides by energy filtered TEM and EELSM. W. Fay, G. Moldovan, I. Harrison, E. Larkins, S. V. Novikov, C.T. Foxon,R. S. Balmer, D. E. J. Soley, K. P. Hilton, M. J. Uren, T. Martin, and P. D. Brown . . . . (c) 2452-2455
1966 Contents
Investigation of oxygen incorporation in AlGaN/GaN heterostructuresHo Won Jang, Min-Kyu Lee, Hyun-Joon Shin, and Jong-Lam Lee (c) 2456-2459
Chemical mechanical polishing for decoration and measurement of dislocations on freestandingGaN wafers
Xueping Xu, Robert P. Vaudo, George R. Brandes, Jie Bai, Pelagia Irene Gouma, andMichael Dudley (c) 2460-2463
Atomic structure and energy of junctions between inversion domain boundaries and stackingfaults in wurtzite GaN
J. Kioseoglou, A. Bere, G.P. Dimitrakopulos, A. Serra, G. Nouet, and Ph. Komninou . . . (c) 2464-2469
Insulating and optical properties of boron nitride for wide-band-gap III-N compoundsH. Dumont, B. Bayle, and B. Bonnetot (c) 2470-2473
Simultaneous composition mapping and hyperspectral cathodoluminescence imaging of InGaNepilayers
P. R. Edwards, R. W. Martin, K. P. O'Donnell, and I. M. Watson (c) 2474-2477
Compositional analysis of AlInGaN quaternary layers grown by metalorganic vapour phase epitaxyD. Amabile, R. W. Martin, T. Wang, M. A. Whitehead, and P. J. Parbrook (c) 2478-2481
Fundamentals of crystal growth
Characterization of MOVPE-grown GaN layers on GaAs ( l l l )B with a cubic-GaN (111) epi-taxial intermediate layer
S. Sanorpim, E. Takuma, R. Katayama, H. Ichinose, K. Onabe, and Y. Shiraki (b) 305-309
The effect of nitrogen on self-assembled GalnNAs quantum dots grown on GaAsA. Nishikawa, Y. G. Hong, and C. W. Tu (b) 310-313
Characteristics of A1N growth on vicinal SiC(OOOl) substrates by molecular beam epitaxyJ. Brault, E. Bellet-Amalric, S. Tanaka, F. Enjalbert, D. Le Si Dang, E. Sarigiannidou,J.-L. Rouviere, G. Feuillet, and B. Daudin (b) 314-317
Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parametersT. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, B. Monemar, and M. Heuken. . . (b) 318-321
Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescenceK. Hoshino, S. Kako, and Y. Arakawa (b) 322-325
The effect of Gallium gallium adsorbate on SiC (0001) surface for GaN by MBEK. Jeganathan, M. Shimizu, T. Ide, and H. Okumura (b) 326-329
Lattice-matched interface between GaN and ZrB2
J.-I. Iwata, K. Siraishi, and A. Oshiyama (c) 2482-2485
Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semi-grand canonical Monte Carlo simulation
Atsushi Mori, Tomonori Ito, Yoshihiro Kangawa, and Akinori Koukitu (c) 2486—2489
First-principle calculation of the epitaxial growth of GaN(0001)A. Ishii and T. Aisaka (c) 2490-2493
Reduction of leakage current of p -n junction by using air-bridged lateral epitaxial growth tech-nique
A. Yamada, Y. Kawaguchi, and T. Yokogawa (c) 2494-2497
Contents 1967
Hydride vapor phase epitaxy of A1N: thermodynamic analysis of aluminum source and its appli-cation to growth
Y. Kumagai, T. Yamane, T. Miyaji, H. Murakami, Y. Kangawa, and A. Koukitu (c) 2498-2501
Growth of high-quality non-polar A1N on 4H-SiC(l 1 -20) substrate by molecular-beam epitaxyN. Onojima, J. Suda, T. Kimoto, and H. Matsunami (c) 2502-2505
HVPE growth of a thick GaN layer on a GaN templated (111) Si substrateY. Nishimura, Y. Honda, M. Yamaguchi, and N. Sawaki (c) 2506-2510
Ultra-flat and high-quality A1N thin films on sapphire (0001) substrates grown by rf-MBEX. Q. Shen, Y. Tanizu, T. Ide, and H. Okumura (c) 2511-2514
Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogenanneal
R. A. Oliver, M. J. Kappers, J. H. Rice, J. D. Smith, R. A. Taylor, C. J. Humphreys,and G. A. D. Briggs (c) 2515-2519
Growth of non-polar a-plane Ill-nitride thin films on Si(100) using non-polar plane buffer layerJ.-H. Song, Y.-Z. Yoo, T. Sekiguchi, K. Nakajima, P. Ahmet, T. Chikyow, K. Okuno,M. Sumiya, and H. Koinuma (c) 2520-2524
Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures:Stranski-Krastanow versus Frank-Van der Merwe growth mode
B. Daudin, N. Gogneau, C. Adelmann, E. Sarigiannidou, E. Monroy, E. Bellet-Amalric,and J. L. Rouviere (c) 2525-2528
Impact of SiC surface control on initial growth mode and crystalline quality of A1N grown bymolecular-beam epitaxy
N. Onojima, J. Suda, T. Kimoto, and H. Matsunami (c) 2529-2532
Growth and characterization of reactive sputtered AlInN filmsQixin Guo, Kousuke Yahata, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa . . . . (c) 2533-2536
Carbon doping of cubic GaN under gallium-rich growth conditionsD. J. As, D. G. Pacheco-Salazar, S. Potthast, and K. Lischka (c) 2537-2540
Reduction of oxygen contamination in A1NJ. Salzman, S. Prawer, B. Meyler, Y. Golan, M. Shandalov, R. Sauer, and N. T e o f i l o v . . . (c) 2541 -2544
Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma
H. Yona, Y. Harada, and T. Yodo (c) 2545-2548
Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy onMOCVD-grown GaN template
Toshihide Ide, Mitsuaki Shimizu, Jason Kuo, Kulandaivel Jeganathan, Xu-Qiang Shen,and Hajime Okumura (c) 2549-2552
Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grownA1N in MOVPE
B. Cao, K. Xu, B. W. Seo, S. Arita, S. Nishida, Y. Ishitani, and A. Yoshikawa (c) 2553-2556
Oxygen doping of c-plane GaN by metalorganic chemical vapor depositionSten Heikman, Stacia Keller, Steven P. DenBaars, and Umesh K. Mishra (c) 2557-2561
A comparative study on In-doping effects for MOVPE GaN films on Si(l l l) and sapphire sub-strates
A. Yamamoto, T. Tanikawa, Bablu K. Ghosh, Y. Hamano, A. Hashimoto, and Y. Ito . . . (c) 2562-2565
1968 Contents
Improved optical properties using self-organized GaN nanotip structureH. Yamaji, Y. Terada, H. Yoshida, H. Miyake, and K. Hiramatsu (c) 2566-2569
Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deepsapphire-nitridation followed by Al-preflow at high temperatures
B. W. Seo, Y. Ishitani, and A. Yoshikawa (c) 2570-2574
Influence of lattice constraint from InN and GaN substrate on relationship between input moleratio and solid composition of InGaN during MOVPE
Y. Kangawa, T. Ito, Y. Kumagai, and A. Koukitu (c) 2575-2579
Material quality improvement for homoepitaxial GaN and A1N layers grown on sapphire-basedtemplates
A. S. Usikov, Dae-Woo Kim, A. I. Pechnikov, Yu. V. Ruban, M. A. Mastro, Yu. Melnik,V. A. Soukhoveev, Y. V. Shapovalova, O. V. Kovalenkov, G. H. Gainer, S. Mahajan, andV. A. Dmitriev (c) 2580-2584
CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semi-conductors
Taro Nishiguchi, Yusuke Mukai, Satoru Ohshima, and Shigehiro Nishino (c) 2585-2588
Direct growth of cubic A1N and GaN on Si (001) with plasma-assisted MBET. Ohachi, T. Kikuchi, Y. Ito, R. Takagi, M. Hogiri, K. Miyauchi, M. Wada, Y. Ohnishi,andK. Fujita (c) 2589-2592
Annealing studies of Si-implanted Alo25GaO75NMee-Yi Ryu, E. A. Chitwood, E. N. Claunch, Y. K. Yeo, R. L. Hengehold, J. A. Fellows,andT. Steiner (c) 2593-2596
Characterization of optical properties
Shallow donors in GaNJ. A. Freitas Jr., W. J. Moore, B. V. Shanabrook, G. C. B. Braga, D. D. Koleske,S. K. Lee, S. S. Park, and J. Y. Han (b) 330-336
Recombination dynamics in low-dimensional nitride semiconductorsY. Kawakami, A. Kaneta, K. Omae, A. Shikanai, K. Okamoto, G. Marutsuki, Y. Narukawa,T. Mukai, and Sg. Fujita (b) 337-343
Exciton localization in InGaN/GaN single quantum well structuresD. M. Graham, A. Soltani Vala, P. Dawson, M. J. Godfrey, M. J. Kappers, T. M. Smeeton,J. S. Barnard, C. J. Humphreys, and E. J. Thrush (b) 344-347
Exciton-exciton correlation effects on FWM in GaNSatoru Adachi, Hirotaka Sasakura, Shunichi Muto, Kouji Hazu, Takayuki Sota,Shigefusa F. Chichibu, and Takashi Mukai (b) 348-351
Localization characteristics of photoluminescence decay dynamics in an In^Ga^^s^^N/GaAssingle quantum well
M. Nakayama, K. Tokuoka, K. Nomura, T. Yamada, A. Moto, and S. Takagishi (b) 352-355
Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaNYasuo Koide, D. E. Walker Jr., B. D. White, L. J. Brillson, T. Itoh, R. L. McCreery,Masanori Murakami, S. Kamiyama, H. Amano, and I. Akasaki (b) 356-359
Impact of exciton localization on the optical properties of non-polar M-plane Ino.1Gao.9N/GaNmultiple quantum wells
Yue Jun Sun, Oliver Brandt, Sven Cronenberg, Holger T. Grahn, and Klaus H. Ploog . . . (b) 360-363
Contents 1969
Carrier capture times in InGaN/GaN multiple quantum wellsW. H. Fan, S. M. Olaizola, T. Wang, P. J. Parbrook, J.-P. R. Wells, D. J. Mowbray,M. S. Skolnick, and A. M. Fox (b) 364-367
Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wellsKoichi Okamoto, Shigeo Fujita, Yoichi Kawakami, and Axel Scherer (b) 368-371
Improvement of luminescence capability of Tb3+-related emission by A l / j a ^ NY. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, and H. Itoh (b) 372-375
Localized biexcitons in ALGa^^N ternary alloy epitaxial layersY. Yamada, C. Sasaki, Y. Ueki, T. Taguchi, S. Tanaka, and Y. Nakagawa (b) 376-379
Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisationinduced 2DEG
A. T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann,Y. Smorchkova, U. K. Mishra, and J. S. Speck (b) 380-383
Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantumwells at 1.5 urn
Gang Chen, R. Rapaport, O. Mitrofanov, C. Gmachl, and H. M. Ng (b) 384-387
Long-lived excitons up to 1 us in GaN/AIN self-assembled quantum dotsS. Kako, M. Miyamura, K. Hoshino, and Y. Arakawa (b) 388-391
The hot carrier dynamics in InGaN multi-quantum well structureA. Shikanai, K. Kojima, K. Omae, Y. Kawakami, Y. Narukawa, T. Mukai, and Sg. Fujita . (b) 392-395
Electrically biased photoreflectance study of cubic GaN/GaAs(001) heterointerfaceRyuji Katayama, Masayuki Kuroda, Kentaro Onabe, and Yasuhiro Shiraki (c) 2597-2601
Polarized micro-photoluminescence spectroscopy of GaN nanocolumnsT. V. Shubina, V. N. Jmerik, S. V. Ivanov, D. D. Solnyshkov, N. A. Cherkashin,K. F. Karlsson, P. O. Holtz, A. Waag, P. S. Kop'ev, and B. Monemar (c) 2602-2605
Thickness dependence of transient absorption spectrum for InGaN thin filmsM.-S. Nomura, M. Arita, S. Ashihara, S. Kako, M. Nishioka, Y. Arakawa, T. Shimura,and K. Kuroda (c) 2606-2609
Quantum-well thickness dependence of stimulated emission in InGaN/GaN structuresS. Jursenas, S. Miasojedovas, G. Kurilcik, A. Zukauskas, Shih-Wei Feng,Yung-Chen Cheng, C. C. Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang (c) 2610-2613
Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxyV. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama,M. Iwaya, H. Amano, and I. Akasaki (c) 2614-2617
Cathodoluminescence studies of large bulk A1N crystalsE. Silveira, J. A. Freitas Jr., G. A. Slack, and L. J. Schowalter (c) 2618-2622
Effects of Al composition on luminescence properties of europium implanted Al^Ga^N (0 < x < 1)Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, H. Itoh, T. Shibata, andM. Tanaka (c) 2623-2626
Efficient two-photon absorption of bulk GaN in the near-infrared regionY. Toda, T. Matsubara, R. Morita, K. Hoshino, T. Someya, and Y. Arakawa (c) 2627-2630
Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen contentGalnNAs layers
R. Intartaglia, T. Taliercio, B. Gil, P. Lefebvre, P. Valvin, T. Bretagnon, M.-A. Pinault,andE. Tournie (c)2631-2634
1972 Contents
Phase separation and superlattice formation by spontaneous vertical composition modulation inGaAs^N/GaAs
H. Dumont, L. Auvray, Y. Monteil, O. Marty, and G. Patriarche (c) 2749-2752
Spectroscopic ellipsometry study on the dielectric functions of GaPN alloysH. Kanaya, H. Yaguchi, Y. Hijikata, S. Yoshida, S. Miyoshi, and K. Onabe (c) 2753-2756
The influence of a low temperature GaNP buffer on GaN growth by metalorganic chemical vapordeposition
Masashi Tsukihara, Yoshiki Naoi, Hong-Dong Li, Tomoya Sugahara, and Shiro Sakai . . (c) 2757-2760
Influence of Sb surfactant on the structural and optical properties of InGaAsN/GaAs multi-quantum wells grown by metalorganic chemical vapor deposition
J. Y. Park, T. S. Kim, T. V. Cuong, C. S. Park, and C.-H. Hong (c) 2761-2764
Hall effect measurement of InAsN alloy films grown directly on GaAs(OOl) substratesby RF-MBE
M. Kuroda, R. Katayama, S. Nishio, K. Onabe, and Y. Shiraki (c) 2765-2768
Electric properties of RF-MBE InGaAsN grown layerT. Suzuki, T. Yamaguchi, A. Yamamoto, and A. Hashimoto (c) 2769-2772
MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaPS. Sanorpim, F. Nakajima, R. Katayama, N. Nakadan, T. Kimura, K. Onabe, andY. Shiraki (c) 2773-2777
Microstructures, defects, and localization luminescence in InGaAsN alloy filmsF. Nakajima, S. Sanorpim, T. Yamamoto, E. Takuma, R. Katayama, H. Ichinose,K. Onabe, and Y. Shiraki (c) 2778-2781
Improvement in the luminescence efficiency of GaAsN alloys by photoexcitationH. Yaguchi, T. Morioke, T. Aoki, Y. Hijikata, S. Yoshida, H. Akiyama, N. Usami,D. Aoki, and K. Onabe (c) 2782-2784
Indium nitride
MBE-growth, characterization and properties of InN and InGaNY. Nanishi, Y. Saito, T. Yamaguchi, M. Hori, F. Matsuda, T. Araki, A. Suzuki, andT. Miyajima (a) 202-208
Narrow bandgap group Ill-nitride alloysJ. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, andWilliam J. Schaff (b) 412-416
Control of electron density in InN by Si doping and optical properties of Si-doped InNM. Higashiwaki, T. Inushima, and T. Matsui (b) 417-420
Photoluminescence and optical absorption edge for MOVPE-grown InNK. Sugita, H. Takatsuka, A. Hashimoto, and A. Yamamoto (b) 421-424
Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloysV. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, A. N. Smirnov, I. N. Goncharuk,A. V. Sakharov, D. A. Kurdyukov, M. V. Baidakova, V. A. Vekshin, S. V. Ivanov,J. Aderhold, J. Graul, A. Hashimoto, and A. Yamamoto (b) 425-428
Contents 1973
Effect of A1N buffer layer on the growth of InN epitaxial film on Si substrateT. Yamaguchi, Y. Saito, C. Morioka, K. Yorozu, T. Araki, A. Suzuki, and Y. N a n i s h i . . . (b) 429-432
High sensitivity, high resolution X-ray photoelectron analysis of InNMarie Wintrebert-Fouquet, K. Scott A. Butcher, and Motlan (c) 2785-2789
High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxyK. Xu, N. Hashimoto, B. Cao, T. Hata, W. Terashima, M. Yoshitani, Y. Ishitani, andA. Yoshikawa (c) 2790-2793
Fabrication of InN/Si heterojunctions with rectifying characteristicsMasahiro Yoshimoto, Yoshiaki Yamamoto, and Junji Saraie (c) 2794-2797
TEM characterization of InN films grown by RF-MBET. Araki, S. Ueta, K. Mizuo, T. Yamaguchi, Y. Saito, and Y. Nanishi (c) 2798-2801
Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substratesby electron cyclotron resonance plasma-assisted molecular-beam epitaxy
T. Yodo, H. Yona, Y. Harada, A. Sasaki, and M. Yoshimoto (c) 2802-2805
Growth of wurtzite InN using MOVPE and its optical characteristicsT. Matsuoka, H. Okamoto, and M. Nakao (c) 2806-2809
Influence of substrate polarity on growth of InN films by RF-MBEFumie Matsuda, Yoshiki Saito, Tomo Muramatsu, Tomohiro Yamaguchi, Yuriko Matsuo,Akinori Koukitu, Tsutomu Araki, and Yasushi Nanishi (c) 2810-2813
Comparative study of InN growth on Ga- and N-polarity GaN templates by molecular-beamepitaxy
K. Xu, W. Terashima, T. Hata, N. Hashimoto, M. Yoshitani, B. Cao, Y. Ishitani, andA. Yoshikawa (c) 2814-2817
Correlation between strain, optical and electrical properties of InN grown by MBEV. Cimalla, Ch. Forster, G. Kittler, I. Cimalla, R. Kosiba, G. Ecke, O. Ambacher,R. Goldhahn, S. Shokhovets, A. Georgakilas, H. Lu, and W. Schaff (c) 2818-2821
Electronic structure of InN observed by Shubnikov-de Haas measurementsT. Inushima, M. Higashiwaki, T. Matsui, T. Takenobu, and M. Motokawa (c) 2822-2825
Formation of ,,air-gap" structure at a GaN epilayer/substrate interface by using an InN interlayerA. Yamamoto, Y. Hamano, T. Tanikawa, Bablu K. Ghosh, and A. Hashimoto (c) 2826-2829
Effect of growth interruption on In-rich InGaN/GaN single quantum well structuresSoon-Yong Kwon, Hyun Jin Kim, HyunseokNa, Hui-Chan Seo, Hee Jin Kim,Yoori Shin, Young-Woon Kim, Sukho Yoon, Hye Jeong Oh, Cheolsoo Sone,Yongjo Park, Yuanping Sun, Yong-Hoon Cho, and Euijoon Yoon (c) 2830-2833
The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor depositionHyun Jin Kim, Hyunseok Na, Soon-Yong Kwon, Hui-Chan Seo, Hee Jin Kim, Yoori Shin,Keon-Hun Lee, Young-Woon Kim, Sukho Yoon, Hye Jeong Oh, Cheolsoo Sone,Yongjo Park, Yong-Hoon Cho, Yuanping Sun, and Euijoon Yoon (c) 2834-2837
Infrared measurements of InN films at low temperaturesY. Ishitani, K. Xu, W. Terashima, N. Hashimoto, M. Yoshitani, T. Hata, andA. Yoshikawa (c) 2838-2841
InN metalorganic vapour phase epitaxy and ellipsometric characterisationM. Drago, T. Schmidtling, U. W. Pohl, S. Peters, and W. Richter (c) 2842-2845
1974 Contents
Growth of optically-active InN with AlInN buffer by plasma-assisted molecular beam epitaxyV. N. Jmerik, V. A. Vekshin, T. V. Shubina, V. V. Ratnikov, S. V. Ivanov, andB. Monemar (c) 2846-2850
Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applicationsOlivier Briot, Benedicte Maleyre, Sandra Ruffenach, Claire Pinquier, Francois Demangeot,and Jean Frandon (c) 2851-2854
Spin electronics
Nitrides as spintronic materialsTomaszDietl (b) 433-439
Optical and magnetic properties of the DyN/GaN superlatticeY. K. Zhou, M. S. Kim, N. Teraguchi, A. Suzuki, Y. Nanishi, and H. Asahi (b) 440-442
Optimization of the growth of Ga^^Mn^N epilayers using plasma-assisted MBES. Kuroda, E. Bellet-Amalric, X. Biquard, J. Cibert, R. Giraud, S. Marcet, andH.Mariette (b) 443-446
Ab initio materials design and Curie temperature of GaN-based ferromagnetic semiconductorsK. Sato, P. H. Dederichs, K. Araki, and H. Katayama-Yoshida (c) 2855-2859
Room-temperature ferromagnetism in Cr-doped GaN films grown by MOMBE on GaAs(lll)Asubstrates
T. Suemasu, K. Yamaguchi, H. Tomioka, and F. Hasegawa (c) 2860-2863
Magnetic properties of the rare-earth-doped semiconductor GaEuNH. Tanaka, M. Hashimoto, S. Emura, A. Yanase, R. Asano, Y.-K. Zhou, H. Bang,K. Akimoto, T. Honma, N. Umesaki, and H. Asahi (c) 2864-2868
Growth and characterization of Ga^Cr^N with high Cr content grown on ZnO templatesJ. J. Kim, H. Makino, P. P. Chen, T. Suzuki, D. C. Oh, H. J. Ko, J. H. Chang, T. Hanada,andT. Yao (c) 2869-2873
Magnetic properties of rare-earth-doped GaNH. Bang, J. Sawahata, G. Piao, M. Tsunemi, H. Yanagihara, E. Kita, and K. Akimoto . . . (c) 2874-2877
Co-implantation of Mn + N into p-type GaN for high Tc ferromagnetismJeong Min Baik, Ho Won Jang, Hyun-Joon Shin, Min-Kyu Lee, Yoon Shon,Tae Won Kang, and Jong-Lam Lee (c) 2878-2881
Comparison of magnetic properties of GaMnN thin films grown by NH3-MBE at different growthtemperatures
P. P. Chen, H. Makino, J. J. Kim, and T. Yao (c) 2882-2885
General characterization
Thermal conductivity of GaN crystals grown by high pressure methodA. Jezowski, P. Stachowiak, T. Plackowski, T. Suski, S. Krukowski, M. Bockowski,I. Grzegory, B. Danilchenko, and T. Paszkiewicz (b) 447-450
Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photo-emission spectroscopy
Ho Won Jang, Kyu Wook Ihm, Tai-Hee Kang, Jung-Hee Lee, and Jong-Lam Lee (b) 451-454
Contents 1975
Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photo-nic crystal
J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard,D. Peyrade, Y. Chen, M. Le Vassor d'Yerville, E. Centeno, D. Cassagne, andJ.P.Albert (b) 455-458
Thermoelectric properties of Al^n^N and InOsNJprepared by reactive radio frequency sputter-ing
S. Yamaguchi, R. Izaki, K. Yamagiwa, K. Taki, Y. Iwamura, and A. Yamamoto (c) 2886-2889
Others
Optical properties of ZnGeN2 epitaxial layerTakao Misaki, Akihiro Wakahara, Hiroshi Okada, and Akira Yoshida (c) 2890-2893
Author Index 2894
DOI: The fastest way to find an article online is the Digital Object Identifier (DOI).Starting in Volume 198, issue 2 (January 2003), DOIs have been printed in the header of the firstpage of every article in physica status solidi (b). On the WWW, one can find an article for examplewith a DOI of 10.1002/pssa.200306608 at http://dx.doi.org/10.1002/pssa.200306608.Please use the DOI of the article to link from your home page to the articles in Wiley Interscience.The DOI is a result of a cross-publisher initiative to create a system for the persistent identificationof documents on digital networks. More information is available from www.doi.org.
Contents 1975
Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photo-nic crystal
J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard,D. Peyrade, Y. Chen, M. Le Vassor d'Yerville, E. Centeno, D. Cassagne, andJ.P.Albert (b) 455-458
Thermoelectric properties of Al^In^N and InOsNTprepared by reactive radio frequency sputter-ing
S. Yamaguchi, R. Izaki, K. Yamagiwa, K. Taki, Y. Iwamura, and A. Yamamoto (c) 2886-2889
Others
Optical properties of ZnGeN2 epitaxial layerTakao Misaki, Akihiro Wakahara, Hiroshi Okada, and Akira Yoshida (c) 2890-2893
Author Index 2894
DOI: The fastest way to find an article online is the Digital Object Identifier (DOI).Starting in Volume 198, issue 2 (January 2003), DOIs have been printed in the header of the firstpage of every article in physica status solidi (b). On the WWW, one can find an article for examplewith a DOI of 10.1002/pssa.200306608 at http://dx.doi.org/10.1002/pssa.200306608.Please use the DOI of the article to link from your home page to the articles in Wiley Interscience.The DOI is a result of a cross-publisher initiative to create a system for the persistent identificationof documents on digital networks. More information is available from www.doi.org.
Contents 1975
Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photo-nic crystal
J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard,D. Peyrade, Y. Chen, M. Le Vassor d'Yerville, E. Centeno, D. Cassagne, andJ.P.Albert (b) 455-458
Thermoelectric properties of Al^InJSI and InOsNfprepared by reactive radio frequency sputter-ing
S. Yamaguchi, R. Izaki, K. Yamagiwa, K. Taki, Y. Iwamura, and A. Yamamoto (c) 2886-2889
Others
Optical properties of ZnGeN2 epitaxial layerTakao Misaki, Akihiro Wakahara, Hiroshi Okada, and Akira Yoshida (c) 2890-2893
Author Index 2894
DOI: The fastest way to find an article online is the Digital Object Identifier (DOI).Starting in Volume 198, issue 2 (January 2003), DOIs have been printed in the header of the firstpage of every article in physica status solidi (b). On the WWW, one can find an article for examplewith a DOI of 10.1002/pssa.200306608 at http://dx.doi.org/10.1002/pssa.200306608.Please use the DOI of the article to link from your home page to the articles in Wiley Interscience.The DOI is a result of a cross-publisher initiative to create a system for the persistent identificationof documents on digital networks. More information is available from www.doi.org.