vlsisymposium.org€¦ · web viewt15-5 stem cross section ingaas fet on insulator (a), s/d region...
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T15-5 STEM cross section InGaAs FET on Insulator (a), S/D region (b) and channel and gate oxide (c).
Paper T15-5, “InGaAs-on-Insulator MOSFET Featuring Scaled Logic Devices and Record RF Performance” C.B. Zota, et al., IBM, Fraunhofer IAF.