w w w . w a y - o n . c o m

mosfet.way-on.com

Wayon Super Junction MOSFET

Technology and Application

2019

• Registered in 1996

• 2018 turnover: $73 million

• One of the World's Leading Brand of Semiconductor Power Devices

and Circuit Protection Devices

Introduction

Wayon Shanghai (H.Q)

Wayon Taiwan

Wayon Shenzhen

Wayon Japan

Wayon Xi’an

Wayon KoreaWayon U.S.A

Wayon Europe

History

1987

1992

1996

2001

2004

2005

2006

2007

2017

2016

2015

20132014

2009

2010

2011

2012

Stem from the R & D on

conductive polymer in SRIM

PPTC applied in Telecom

application in Bell and Huawei

Wayon formally

registered

Approved

Supplier to BYD

Approved Supplier

to SGS and SANYO

Approved Supplier to

SAMSUNG and LG

Changyuan Group became

the controlling shareholder

(stock code: 600552)

Launched semiconductor

protection product

Approved Supplier to

Motorola,SONY

Panasonic and HTC

Approved supplier to

Apple on iPhone series

WAYON began to develop

Super Junction (SJ C1)

MOSFET Products

The TUV TMPL Lab

authorized

UL CTDP Lab authorized

2nd generation SJ-MOSFET Launched

Trench MOSFET launched

OVP IC applied in SAMSUNG’s cell phoneSJ-MOSFET Applied

in Sumsung & LG's

cellphone Charger

SJ-MOSFET 800V M3 series

released

SJ-MOSFET with ESD released

6 US Patents 2 Japan Patents 2 Europe patents

Intellectual Property

1987 Started the R&D on circuit protection products

Now Held 93 patents on semiconductor devices, polymer resettable fuses,

semiconductor protection devices, SCF, and thermal fuse products

Product coverage：

Polymer PTC

Ceramic PTC

SMD Fuse

Self control fuse(SCF)

Super Junction Mosfet

ESD& EOS Device

TVS

Thyristor

Protection IC

GDT

OVP

Main Products

Quality System

System Cert

ISO9001 ISO14001 TS16949

Hazardous Substance

SONY GP Cert.

LAB Qualification

UL—CDTP Lab TUV—TMPL Lab

Over 1200 m2 Lab. in Wayon Shanghai

Power MOSFET Lab.

Power Semiconductor Devices Lab.

Power MOS Application Test Lab.

Reliability Test Center

Failure Analysis Center

Xi’an

Shanghai

Shenzhen

Test Item Test Condition Duration Sample Size Acc/Reject Referenced standard

HTGBTA= 150°C ,

Vgs=30V 1000 hrs 77pcs*3lots 0/1 JESD22-A108

HTRBTA = 150°C ,

Vds=80%Vdsmax. 1000 hrs 77pcs*3lots 0/1 JESD22-A108

HTSL TA = 150°C 1000 hrs 77pcs*3lots 0/1 JESD22-A103

PCT121°C 205KPA

100%RH 96 hrs 77pcs*3lots 0/1 JESD22-A102

TCT-65°C to 150°C,

air to air,

500

cycles 77pcs*3lots 0/1 JESD22-A104

SJ-MOS Industrial Level Reliability

Wayon

SJ-MOS

QualificationSwitching characteristics

EAS IAS

Reliability Capacitance

Static characteristics Reverse Diode characteristics

Eoff,Eon

SMPS On board test

SMPSMajor Customers

SJ-MOS Application Fields SJ-MOS

SMPS TV Charger Adapter

LED Charging Pile Server/UPS PC

4

Metal

ILD

PolyN+

P+P

N+

N-

E-fie

ld

BV

• VDMOS introduced in the 1970s

• Higher BV, larger die size

• Rdson*A ∝BV2.5

SJ-MOSFET Structure

MetalILD

PolyN+

P+

N+

N-

P

P pillar

E-fie

ld BV

• Charge balance principle

• 1st SJ-MOS patent in 1993

• 1st commercial SJ-MOSFET in 1998

• Thinner EPI layer

• Rdson*A ∝BV1.32

Ciss

Coss

Crss

Vds(V)

Cap

acita

nce (

pF

)

Capacitance vs. Vds

VDMOS

SJ-MOS

Rdson vs. BV

Rdso

n*A

[Ω

*mm

2]

VDMOS

Si limitSJ-MOS

BV (V)

Small package

High power density

High efficiency

SJ-MOSFET Characteristics

SMPS miniature with SJ-MOS

SJ-MOSFET Characteristics

Deep Trench

Wayon,Toshiba, Fairchild

Multi-EPI

Wayon, Infineon, ST, Fairchild

EMI Surge Cost

SJ-MOS Technology Development

FOM(Rdson*Qg)

Wayon SJ C1

Rd

so

n*Q

g(Ω

*n

C)

-38%

Wayon SJ C2Competitor 1 C3 Competitor 2 C6

SJ-MOS Technology Evolution

CYG Wayon SJ-MOS C2 owns advanced FOM.

PFC circuit with parasitic elementsQ=ωL/R=1/ωCR

Patented SJ-MOS Technology--Rg

Oscillation can be suppressed by CYG SJ-MOS with 8Ω internal Rg_int,

making MOSFET soft switching.

Effect of internal Rg on VGS

SJ-MOS C2 EMI improvement—Rg

C1 Internal Rg: 1Ω

dv/dt: 19V/ns

di/dt: 460A/us

△Vgs:15V

Eon:2.6uJ

C2 Internal Rg: 8Ω

dv/dt: 16V/ns

di/dt: 380A/us

△Vgs:8.6V

Eon:3.9uJ

Vgs

CH1:VDS,CH2:VGS,CH3:IDS

SJ-MOS C2 Series integrated 8ohm Rg inside to suppress the vibration

caused by swithching in order to further decrease EMI influence.

Wayon SJ-MOS EM

SJ-MOS C2

Coss

Ciss

VDS (V)

Ca

p. (p

F)

Crss

Patented SJ-MOS Technology--EMI

Smoother Crss curve, good EMI

Trench MOS SGT MOS SJ MOS

2016 2017 2018 2019 2020

LV-MOS

HV-SJMOS

SiC SBD

SiC MOS

IGBT

500V-900V C2 EZ, EM

800V M3

C4

MV-MOS

200V-400V JMOS

1200V, 950V

1000V,1050V

600V 1200V

600V 1200V

600V,1200V

Technology

C5

Power Devices Road Map

SJ-MOS C2 Product Portfolio600V SJ-MOSFET C2RDS(on),max [Ω] TO-252 TO-251 TO-251S3 TO-251S2 TO-220F TO-220 TO-263 TO-262 TO-247

1.9 WMO04N60C2 WMP04N60C2 WMG04N60C2 WMH04N60C2 WML04N60C2

1.14 WMO07N60C2 WMP07N60C2 WMG07N60C2 WMH07N60C2 WML07N60C2 WMK07N60C2

0.94 WMO09N60C2 WMP09N60C2 WMG09N60C2 WMH09N60C2 WML09N60C2 WMK09N60C2

0.69 WMO10N60C2 WMP10N60C2 WMG10N60C2 WMH10N60C2 WML10N60C2 WMK10N60C2 WMM10N60C2 WMN10N60C2

0.54 WMO11N60C2 WMP11N60C2 WML11N60C2 WMK11N60C2 WMM11N60C2 WMN11N60C2

0.405 WMO14N60C2 WMP14N60C2 WML14N60C2 WMK14N60C2 WMM14N60C2 WMN14N60C2

0.32 WMO16N60C2 WMP16N60C2 WML16N60C2 WMK16N60C2 WMM16N60C2 WMN16N60C2

0.3 WMO20N60C2 WMP20N60C2 WML20N60C2 WMK20N60C2 WMM20N60C2 WMN20N60C2

0.235 WMO22N60C2* WMP22N60C2* WML22N60C2* WMK22N60C2* WMM22N60C2* WMN22N60C2* WMJ22N60C2*

0.19 WML26N60C2 WMK26N60C2 WMM26N60C2 WMN26N60C2 WMJ26N60C2

0.12 WML30N60C2* WMK30N60C2* WMM30N60C2* WMN30N60C2* WMJ30N60C2*

0.099 WML38N60C2 WMK38N60C2 WMM38N60C2 WMN38N60C2 WMJ38N60C2

0.07 WML53N60C2 WMJ53N60C2

0.04 WMJ80N60C2*

650V SJ-MOSFET C2RDS(on) ,max[Ω] TO-252 TO-251 TO-251S3 TO-251S2 TO-220F TO-220 TO-263 TO-262 TO-247

1.9 WMO04N65C2 WMP04N65C2 WMG04N65C2 WMH04N65C2 WML04N65C2

1.14 WMO07N65C2 WMP07N65C2 WMG07N65C2 WMH07N65C2 WML07N65C2 WMK07N65C2

0.94 WMO09N65C2 WMP09N65C2 WMG09N65C2 WMH09N65C2 WML09N65C2 WMK09N65C2

0.69 WMO10N65C2 WMP10N65C2 WMG10N65C2 WMH10N65C2 WML10N65C2 WMK10N65C2 WMM10N65C2 WMN10N65C2

0.54 WMO11N65C2 WMP11N65C2 WML11N65C2 WMK11N65C2 WMM11N65C2 WMN11N65C2

0.405 WMO14N65C2 WMP14N65C2 WML14N65C2 WMK14N65C2 WMM14N65C2 WMN14N65C2

0.32 WMO16N65C2 WMP16N65C2 WML16N65C2 WMK16N65C2 WMM16N65C2 WMN16N65C2

0.3 WMO20N65C2 WMP20N65C2 WML20N65C2 WMK20N65C2 WMM20N65C2 WMN20N65C2

0.235 WMO22N65C2* WMP22N65C2* WML22N65C2* WMK22N65C2* WMM22N65C2* WMN22N65C2* WMJ22N65C2*

0.19 WML26N65C2 WMK26N65C2 WMM26N65C2 WMN26N65C2 WMJ26N65C2

0.12 WML30N65C2* WMK30N65C2* WMM30N65C2* WMN30N65C2* WMJ30N65C2*

0.099 WML38N65C2 WMK38N65C2 WMM38N65C2 WMN38N65C2 WMJ38N65C2

0.07 WML53N65C2 WMJ53N65C2

0.04 WMJ80N65C2*

* Developing

SJ-MOS C2 & M3 Product Portfolio

* Developing

700V SJ-MOSFET C2RDS(on),max [Ω] TO-252 TO-251 TO-251S3 TO-251S2 TO-220F TO-220 TO-263 TO-262

2.45 WMO04N70C2 WMP04N70C2 WMG04N70C2 WMH04N70C2 WML04N70C2

1.45 WMO07N70C2 WMP07N70C2 WMG07N70C2 WMH07N70C2 WML07N70C2 WMK07N70C2

1.2 WMO09N70C2 WMP09N70C2 WMG09N70C2 WMH09N70C2 WML09N70C2 WMK09N70C2

0.92 WMO10N70C2 WMP10N70C2 WMG10N70C2 WMH10N70C2 WML10N70C2 WMK10N70C2 WMM10N70C2 WMN10N70C2

0.68 WMO11N70C2 WMP11N70C2 WML11N70C2 WMK11N70C2 WMM11N70C2 WMN11N70C2

0.53 WMO14N70C2 WMP14N70C2 WML14N70C2 WMK14N70C2 WMM14N70C2 WMN14N70C2

0.42 WMO16N70C2 WMP16N70C2 WML16N70C2 WMK16N70C2 WMM16N70C2 WMN16N70C2

800V SJ-MOSFET M3RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

4 WMO03N80M3 WMP03N80M3 WML03N80M3 WMK03N80M3 WMM03N80M3 WMN03N80M3

2.3 WMO05N80M3 WMP05N80M3 WML05N80M3 WMK05N80M3 WMM05N80M3 WMN05N80M3

2 WMO06N80M3 WMP06N80M3 WML06N80M3 WMK06N80M3 WMM06N80M3 WMN06N80M3

1.8 WMO07N80M3 WMP07N80M3 WML07N80M3 WMK07N80M3 WMM07N80M3 WMN07N80M3

1.38 WMO08N80M3 WMP08N80M3 WML08N80M3 WMK08N80M3 WMM08N80M3 WMN08N80M3

1.03 WMO10N80M3 WMP10N80M3 WML10N80M3 WMK10N80M3 WMM10N80M3 WMN10N80M3

0.8 WMO11N80M3 WMP11N80M3 WML11N80M3 WMK11N80M3 WMM11N80M3 WMN11N80M3

0.62 WMO12N80M3 WMP12N80M3 WML12N80M3 WMK12N80M3 WMM12N80M3 WMN12N80M3 WMJ12N80M3

0.48 WMO13N80M3 WMP13N80M3 WML13N80M3 WMK13N80M3 WMM13N80M3 WMN13N80M3 WMJ13N80M3

0.36 WML15N80M3 WMK15N80M3 WMM15N80M3 WMN15N80M3 WMJ15N80M3

0.26 WML25N80M3 WMK25N80M3 WMM25N80M3 WMN25N80M3 WMJ25N80M3

0.195 WML30N80M3 WMK30N80M3 WMM30N80M3 WMN30N80M3 WMJ30N80M3

0.128 WML35N80M3 WMJ35N80M3

SJ-MOS C2 Product Portfolio

* Developing

900V SJ-MOSFET C2RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

5.2 WMO03N90C2 WMP03N90C2 WML03N90C2 WMK03N90C2 WMM03N90C2 WMN03N90C2

3.1 WMO05N90C2 WMP05N90C2 WML05N90C2 WMK05N90C2 WMM05N90C2 WMN05N90C2

2.5 WMO06N90C2 WMP06N90C2 WML06N90C2 WMK06N90C2 WMM06N90C2 WMN06N90C2

2 WMO07N90C2 WMP07N90C2 WML07N90C2 WMK07N90C2 WMM07N90C2 WMN07N90C2

1.37 WMO09N90C2 WMP09N90C2 WML09N90C2 WMK09N90C2 WMM09N90C2 WMN09N90C2

1 WMO10N90C2 WMP10N90C2 WML10N90C2 WMK10N90C2 WMM10N90C2 WMN10N90C2

0.9 WMO11N90C2 WMP11N90C2 WML11N90C2 WMK11N90C2 WMM11N90C2 WMN11N90C2

0.65 WML12N90C2 WMK12N90C2 WMM12N90C2 WMN12N90C2 WMJ12N90C2

0.49 WML15N90C2* WMK15N90C2* WMM15N90C2* WMN15N90C2* WMJ15N90C2*

0.35 WML21N90C2 WMK21N90C2 WMJ21N90C2

0.25 WML25N90C2* WMJ25N90C2*

1000V SJ-MOSFET C2RDS(on),max

[Ω]TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

3.5 WMO05N100C2 WMP05N100C2 WML05N100C2 WMK05N100C2 WMM05N100C2 WMN05N100C2

2.5 WMO07N100C2 WMP07N100C2 WML07N100C2 WMK07N100C2 WMM07N100C2 WMN07N100C2

1.4 WMO10N100C2 WMP10N100C2 WML10N100C2 WMK10N100C2 WMM10N100C2 WMN10N100C2

0.8 WML12N100C2 WMK12N100C2 WMM12N100C2 WMN12N100C2 WMJ12N100C2

0.6 WML15N100C2* WMK15N100C2* WMM15N100C2* WMN15N100C2* WMJ15N100C2*

0.31 WML21N100C2* WMK21N100C2* WMJ21N100C2*

* Developing

SJ-MOS C2 Product Portfolio

* Developing

1050V SJ-MOSFET C2

1200V SJ-MOSFET C2

RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

1.9 WML08N120C2* WMK08N120C2* WMM08N120C2* WMN08N120C2* WMJ08N120C2*

0.67 WML12N120C2* WMK12N120C2* WMM12N120C2* WMN12N120C2* WMJ12N120C2*

RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

3.5 WMO05N105C2 WMP05N105C2 WML05N105C2 WMK05N105C2 WMM05N105C2 WMN05N105C2

2.5 WMO07N105C2 WMP07N105C2 WML07N105C2 WMK07N105C2 WMM07N105C2 WMN07N105C2

1.4 WMO10N105C2 WMP10N105C2 WML10N105C2 WMK10N105C2 WMM10N105C2 WMN10N105C2

0.8 WML12N105C2* WMK12N105C2* WMM12N105C2* WMN12N105C2* WMJ12N105C2*

SJ-MOS C4 Product Portfolio

* Developing

600V SJ-MOSFET C4RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

0.6 WMO10N60C4* WMP10N60C4* WML10N60C4* WMK10N60C4* WMM10N60C4* WMN10N60C4*

0.38 WMO14N60C4* WMP14N60C4* WML14N60C4* WMK14N60C4* WMM14N60C4* WMN14N60C4*

0.3 WMO15N60C4 WMP15N60C4 WML15N60C4 WMK15N60C4 WMM15N60C4 WMN15N60C4

0.19 WMO26N60C4 WMP26N60C4 WML26N60C4 WMK26N60C4 WMM26N60C4 WMN26N60C4

0.14 WML28N60C4* WMK28N60C4* WMM28N60C4* WMN28N60C4* WMJ28N60C4*

0.099 WML36N60C4* WMK36N60C4* WMM36N60C4* WMN36N60C4* WMJ36N60C4*

0.07 WML53N60C4* WMJ53N60C4

0.04 WMJ80N60C4*

0.03 WMJ90N60C4*

650V SJ-MOSFET C4RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

0.6 WMO10N65C4* WMP10N65C4* WML10N65C4* WMK10N65C4* WMM10N65C4* WMN10N65C4*

0.38 WMO14N65C4* WMP14N65C4* WML14N65C4* WMK14N65C4* WMM14N65C4* WMN14N65C4*

0.3 WMO15N65C4 WMP15N65C4 WML15N65C4 WMK15N65C4 WMM15N65C4 WMN15N65C4

0.19 WMO26N65C4* WMP26N65C4* WML26N65C4* WMK26N65C4* WMM26N65C4* WMN26N65C4*

0.14 WML28N65C4* WMK28N65C4* WMM28N65C4* WMN28N65C4* WMJ28N65C4*

0.099 WML36N65C4* WMK36N65C4* WMM36N65C4* WMN36N65C4* WMJ36N65C4*

0.07 WML53N65C4* WMJ53N65C4*

0.04 WMJ80N65C4*

0.03 WMJ90N65C4*

SJ-MOS EM Product Portfolio

* Developing

650V SJ-MOSFET EM

700V SJ-MOSFET EM

RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

1.5 WMO05N65EM* WMP05N65EM* WML05N65EM* WMK05N65EM* WMM05N65EM* WMN05N65EM*

1.2 WMO06N65EM* WMP06N65EM* WML06N65EM* WMK06N65EM* WMM06N65EM* WMN06N65EM*

0.95 WMO08N65EM* WMP08N65EM* WML08N65EM* WMK08N65EM* WMM08N65EM* WMN08N65EM*

0.6 WMO10N65EM WMP10N65EM WML10N65EM WMK10N65EM WMM10N65EM WMN10N65EM

0.39 WMO13N65EM WMP13N65EM WML13N65EM WMK13N65EM WMM13N65EM WMN13N65EM

0.28 WMO18N65EM WMP18N65EM WML18N65EM WMK18N65EM WMM18N65EM WMN18N65EM WMJ18N65EM

0.24 WMO20N65EM WMP20N65EM WML20N65EM WMK20N65EM WMM20N65EM WMN20N65EM WMJ20N65EM

0.19 WML25N65EM* WMK25N65EM* WMM25N65EM* WMN25N65EM* WMJ25N65EM*

0.16 WML30N65EM WMK30N65EM WMM30N65EM WMN30N65EM WMJ30N65EM

RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

1.5 WMO05N70EM* WMP05N70EM* WML05N70EM* WMK05N70EM* WMM05N70EM* WMN05N70EM*

1.3 WMO06N70EM* WMP06N70EM* WML06N70EM* WMK06N70EM* WMM06N70EM* WMN06N70EM*

0.97 WMO08N70EM* WMP08N70EM* WML08N70EM* WMK08N70EM* WMM08N70EM* WMN08N70EM*

0.6 WMO10N70EM WMP10N70EM WML10N70EM WMK10N70EM WMM10N70EM WMN10N70EM

0.39 WMO13N70EM WMP13N70EM WML13N70EM WMK13N70EM WMM13N70EM WMN13N70EM

0.29 WMO18N70EM WMP18N70EM WML18N70EM WMK18N70EM WMM18N70EM WMN18N70EM WMJ18N70EM

0.25 WMO20N70EM WMP20N70EM WML20N70EM WMK20N70EM WMM20N70EM WMN20N70EM WMJ20N70EM

0.2 WML25N70EM* WMK25N70EM* WMM25N70EM* WMN25N70EM* WMJ25N70EM*

0.17 WML30N70EM WMK30N70EM WMM30N70EM WMN30N70EM WMJ30N70EM

FD SJ-MOS

Normal SJ-

MOS

Curr

en

t(A

)

Diode reverse recovery comparison

Benefit:

• Improved diode recovery performances (low trr & Qrr)

• Higher efficiency and robustness in the application

• Targeted for ZVS/LLC topology

SJ-MOS with Fast Body Diode(FD Series)

600V SJ-MOSFET FD

650V SJ-MOSFET FD

RDS(on) ,max[Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

1.24 WMO07N60FD WMP07N60FD WML07N60FD WMK07N60FD WMM07N60FD WMN07N60FD

0.58 WMO11N60FD WMP11N60FD WML11N60FD WMK11N60FD WMM11N60FD WMN11N60FD

0.34 WMO16N60FD WMP16N60FD WML16N60FD WMK16N60FD WMM16N60FD WMN16N60FD

0.215 WML26N60FD WMK26N60FD WMM26N60FD WMN26N60FD WMJ26N60FD

0.115 WML38N60FD WMK38N60FD WMM38N60FD WMN38N60FD WMJ38N60FD

0.078 WML53N60FD WMJ53N60FD

0.047 WMJ80N60FD*

RDS(on) ,max[Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

1.24 WMO07N65FD WMP07N65FD WML07N65FD WMK07N65FD WMM07N65FD WMN07N65FD

0.58 WMO11N65FD WMP11N65FD WML11N65FD WMK11N65FD WMM11N65FD WMN11N65FD

0.34 WMO16N65FD WMP16N65FD WML16N65FD WMK16N65FD WMM16N65FD WMN16N65FD

0.215 WML26N65FD WMK26N65FD WMM26N65FD WMN26N65FD WMJ26N65FD

0.115 WML38N65FD WMK38N65FD WMM38N65FD WMN38N65FD WMJ38N65FD

0.078 WML53N65FD WMJ53N65FD

0.047 WMJ80N65FD*

* Developing

SJ-MOS F2 Product Portfolio

* Developing

600V SJ-MOSFET F2

RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

0.68 WMO10N60F2* WMP10N60F2* WML10N60F2* WMK10N60F2* WMM10N60F2* WMN10N60F2*

0.43 WMO14N60F2* WMP14N60F2* WML14N60F2* WMK14N60F2* WMM14N60F2* WMN14N60F2*

0.34 WMO15N60F2* WMP15N60F2* WML15N60F2* WMK15N60F2* WMM15N60F2* WMN15N60F2*

0.23 WMO26N60F2* WMP26N60F2* WML26N60F2* WMK26N60F2* WMM26N60F2* WMN26N60F2*

0.11 WML36N60F2* WMK36N60F2* WMM36N60F2* WMN36N60F2* WMJ36N60F2*

0.078 WML53N60F2* WMJ53N60F2

0.044 WMJ80N60F2*

0.033 WMJ90N60F2*

650V SJ-MOSFET F2

RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247

0.43 WMO14N65F2* WMP14N65F2* WML14N65F2* WMK14N65F2* WMM14N65F2* WMN14N65F2*

0.23 WMO26N65F2* WMP26N65F2* WML26N65F2* WMK26N65F2* WMM26N65F2* WMN26N65F2*

0.11 WML36N65F2* WMK36N65F2* WMM36N65F2* WMN36N65F2* WMJ36N65F2*

0.078 WML53N65F2* WMJ53N65F2*

0.044 WMJ80N65F2*

0.033 WMJ90N65F2*

Wayon SJ-MOS New Packages

SOT-223-2L

TO-220 ISO

TO-220F SL

New fullpak type through-hole TO packages

Standard

TO-220F

19mm

Wayon

TO-220F N

17.8mmNew

Wayon

O-220F NL

15.3mmNew15mmNew

Wayon

TO-220F SL

m o s f e t@ wa y - o n . c om

Thank you