voxtel apd catalog

N I R A v a l a n c h e P h o t o d i o d e s

P h o t o r e c e i v e r s

C A T A L O G

Voxtel is at the forefront of technology for high-sensitivity infrared sensing. Our products are providing our customers with improved solutions for a variety of commercial, scientific, and military sensing applications, and are providing the performance to make new applications possible.

The company was founded in 1999 with a strong focus on innovation and on bringing advanced electo-optics technologies to market, quickly and efficiently. We anticipate and translate application needs into innovative and cost-effective solutions, which we deliver to the market on time and with exceptional quality, allowing both Voxtel and our channel partners an optimal return on investment and rate of growth.

©2011 Voxtel, Inc.

Voxtel Headquarters:

15985 NW Schendel Ave. #200

Beaverton, OR 97006

LEGAL DISCLAIMER

Information in this catalog is subject to change without notice. It may contain technical inaccuracies or typographical errors.

Voxtel, Inc. may make improvements and/or changes in the products described in this information at any time, without notice.

Voxtel, Inc. reserves the right to dicontinue or change product specifications and prices without prior notice. Inadvertent errors

in advertised prices are not binding on Voxtel, Inc.

INFORMATION IN THIS CATALOG IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING,

BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR APPLICATION,

OR NON-INFRINGEMENT.

Voxtel strives to be the industry’s first-choice solution for

electro-optical devices, subsystems, and instrumentation.

Contents

APD Product Guide 4

Voxtel APDs 6

Introduction 6

Product Series 6

Responsivity vs. Noise 8

Comparison Table 9

APD Product Listings 12

Avalanche Photodiodes 12

Packaged APDs 23

APD Photoreceivers 37

APD Receiver Support Electronics Modules 52

References 53

4

APD Die Packaged APDs APD PhotoreceiversPart # Description Page # Part # Description Page # Part # Bandwidth Description Page #

Deschutes FSI™

Bare APD die APD in hermetic TO-46 can

Deschutes FSI™

Window-coupled Receivers in hermetic TO-8 can

VFI1-DAZA 25-µm dia. 12 VFI1-DCAA 25-µm dia. 24 RDI1-NJAC 200 MHz 200-µm dia. APD 39

VFI1-JAZA 75-µm dia. 13 VFI1-JCAA 75-µm dia. 25 RDI1-JJAC 580 MHz 75-µm dia. APD 40

VFI1-NAZA 200-µm dia. 14 VFI1-NCAA 200-µm dia. 26

APD with 3-stage TEC in hermetic TO-8 can

VFI1-JKAB 75-µm dia. 27

VFI1-NKAB 200-µm dia. 28

Deschutes BSI™

APD Die on submount APD in hermetic TO-46 can

Deschutes BSI™


VFC1-EBZA 30-µm dia. 15 VFC1-JCAA 75-µm dia. 29 RJC1-NJAC 200 MHz Band-limited receiver, 200-µm dia. APD 41

VFC1-JBZA 75-µm dia. 16 VFC1-NCAA 200-µm dia. 30 RDC1-NJAC 300 MHz 200-µm dia. APD 42

VFC1-NBZA 200-µm dia. 17 APD with 3-stage TEC in hermetic TO-8 can RIC1-JJAC 2 GHz 75 µm dia. APD 44

VFC1-JKAB 75-µm dia. 31 Fiber-coupled Receivers, TO-8 package

VFC1-NKAB 200-µm dia. 32 RIC1-JJQC 2 GHz 62.5/125 µm FO, others available 45

Siletz™


Siletz™


VFP1-EBZA 30-µm dia. 18 VFP1-JCAA 75-µm dia. 33 RIP1-NJAC 1 GHz 200-µm dia. APD 46

VFP1-JBZA 75-µm dia. 19 VFP1-NCAA 200-µm dia. 34 RIP1-JJAC 2.1 GHz 75-µm dia. APD 47

VFP1-NBZA 200-µm dia. 20 APD with 3-stage TEC in hermetic TO-8 can Ball-lens-coupled Receivers, TO-8 package

VFP1-JKAB 75-µm dia. 35 R2P1-JCAA 1.5 GHz 300-µm dia. (effective) APD 49

VFP1-NKAB 200-µm dia. 36 Fiber-coupled Receivers, TO-8 package

RIP1-JJQC 2.1 GHz 62.5/125 µm FO, others available 51

Siletz-UHG™APD Die on submount

VFS1-HBZA 50-µm dia. 21

APD Product Guide

Notes on APD Die and PackagesDeschutes BSI™, Siletz™, and Siletz-UHG™ APDs are backside-illuminated devices that are provided on flip-chip submounts, ready for wirebonding.

Packaged APDs are available standard with AR coating, and are optionally available with a variety of coatings and lenses, as well as fiber coupling options for the Deschutes BSI™, Siletz™, and Siletz UHG™ series. We look forward to your inquiries on custom orders.

5

APD Die Packaged APDs APD PhotoreceiversPart # Description Page # Part # Description Page # Part # Bandwidth Description Page #

Deschutes FSI™

Bare APD die APD in hermetic TO-46 can

Deschutes FSI™


VFI1-DAZA 25-µm dia. 12 VFI1-DCAA 25-µm dia. 24 RDI1-NJAC 200 MHz 200-µm dia. APD 39

VFI1-JAZA 75-µm dia. 13 VFI1-JCAA 75-µm dia. 25 RDI1-JJAC 580 MHz 75-µm dia. APD 40

VFI1-NAZA 200-µm dia. 14 VFI1-NCAA 200-µm dia. 26

APD with 3-stage TEC in hermetic TO-8 can

VFI1-JKAB 75-µm dia. 27

VFI1-NKAB 200-µm dia. 28

Deschutes BSI™


Deschutes BSI™


VFC1-EBZA 30-µm dia. 15 VFC1-JCAA 75-µm dia. 29 RJC1-NJAC 200 MHz Band-limited receiver, 200-µm dia. APD 41

VFC1-JBZA 75-µm dia. 16 VFC1-NCAA 200-µm dia. 30 RDC1-NJAC 300 MHz 200-µm dia. APD 42

VFC1-NBZA 200-µm dia. 17 APD with 3-stage TEC in hermetic TO-8 can RIC1-JJAC 2 GHz 75 µm dia. APD 44

VFC1-JKAB 75-µm dia. 31 Fiber-coupled Receivers, TO-8 package

VFC1-NKAB 200-µm dia. 32 RIC1-JJQC 2 GHz 62.5/125 µm FO, others available 45

Siletz™


Siletz™


VFP1-EBZA 30-µm dia. 18 VFP1-JCAA 75-µm dia. 33 RIP1-NJAC 1 GHz 200-µm dia. APD 46

VFP1-JBZA 75-µm dia. 19 VFP1-NCAA 200-µm dia. 34 RIP1-JJAC 2.1 GHz 75-µm dia. APD 47

VFP1-NBZA 200-µm dia. 20 APD with 3-stage TEC in hermetic TO-8 can Ball-lens-coupled Receivers, TO-8 package

VFP1-JKAB 75-µm dia. 35 R2P1-JCAA 1.5 GHz 300-µm dia. (effective) APD 49

VFP1-NKAB 200-µm dia. 36 Fiber-coupled Receivers, TO-8 package

RIP1-JJQC 2.1 GHz 62.5/125 µm FO, others available 51

Siletz-UHG™APD Die on submount

VFS1-HBZA 50-µm dia. 21

APD Product Guide

Notes on PhotoreceiversA variety of custom options and optical fiber connections are available, and we continue to add standard products to our photoreceiver lines. We look forward to your inquiries on custom orders and new products.

Many customers who order our photoreceivers use our APD Receiver Support Modules for fast and easy inte-gration into their laboratory tests and product prototypes. See page 52 for more information on our support modules.

6

Voxtel APDs — Introduction

Voxtel APDs

Voxtel’s avalanche photodiodes (APDs) offer superior response and linear-mode, low-light-level detection capabilities that conventional telecommunications APDs and Geiger-mode APDs can’t offer.

Customers with applications that are presently served by NIR photodiodes or low-gain telecom APDs will often prefer the Deschutes FSI™ or Deschutes BSI™ APDs and photoreceivers for their modest price and low-noise performance at gains up to M = 20. A variety of high-performance and low-light-level applications are best served by our Siletz™ line of products, and our Siletz UHG™ line offers ultra-high gain and responsivity for the detection of very low light levels, including Voxtel’s published results in photon number discrimination (see page 53).

Voxtel’s single-element devices are available as bare die, on submounts (for our backside-illuminated prod-ucts), in hermetic packages, and integrated into photoreceivers, with a variety of options for packaging and optical input.

Voxtel’s APD Product Series

Silicon vs Voxtel’s InGaAs APDs

Voxtel produces a number of high-performance InGaAs APDs, and each is best suited for a particular range of applications. This guide discusses the differences between Voxtel’s products and related products for NIR detection, as well as the differences among Voxtel’s product lines.

Voxtel’s APDs are replacing silicon APDs in many applications. Silicon APDs are typically used for the 300–1100 nm spectral band, while InGaAs APDs normally cover the 900–1700 nm band. Their response overlaps in the 900–1100 nm spectral region, which includes the ubiquitous 1064 nm Nd:YAG solid-state laser line that is used in many systems for range finding and target designation.

Voxtel’s InGaAs APDs are often an attractive alternative to silicon APDs in designing new systems where a fast signal rise time is required, and have served many users of silicon APDs in migrating to eye-safe systems at e.g. 1550 nm while maintaining backwards compatibility with legacy 1064 nm illuminators. However, the detector specifications can be considerably different for the two types of APDs, so depending on the application, it may not be feasible to use an InGaAs APD as a drop-in-replacement for legacy systems using a silicon APD.

Voxtel’s InGaAs APDs are often the best choice for low-light-level and/or high-bandwidth applications, though understanding the differences between our detectors is important in order to choose the right Voxtel APD for a particular application.

Introduction Product Series

7

Choosing a Voxtel APD: Four product lines

Excess Noise Comparisons

Initial considerations: FSI vs. BSI spectral response and mechanical differences

Extreme low-light-level detection: Siletz UHG™

Voxtel sells four InGaAs APD product lines: the Deschutes FSI™, Deschutes BSI™, Siletz™, and Siletz UHG™ series. The Deschutes FSI™ series of APDs are front-side-illuminated (FSI), while the other three series of APDs are all back-side-illuminated (BSI). The most important difference between FSI and BSI configuration is that the FSI APDs are able to absorb wavelengths below 950 nm, but for applications at 950 nm and above, the BSI APDs offer higher spectral responsivity and lower detector capacitance.

Voxtel’s BSI APDs are supplied on flip-chip ceramic submounts, ready for wire bonding. The submount increases footprint and height, but also reduces parasitic capacitance between the BSI APD’s submount bond pads relative to the bond pads situated directly on an FSI APD. Also, all of Voxtel’s fiber-coupled assemblies are designed for use with our BSI APDs; fiber-coupled FSI receivers are not presently offered as standard products.

For these reasons, our Deschutes FSI™ line is preferred by customers who require spectral response superior to silicon in the ~800–950 nm range, or who require our smallest APD.

Siletz UHG™ products offer ultra-high gain with low excess shot noise, suitable for the detection of very weak signals at the near–single photon level, at rates up to about 30 MHz. These features are discussed in more detail in Voxtel’s publications in the area of extreme low-light-level detection and photon number discrimina-tion; see page 53.

1 10 100 1000

10

20

30

1

Gain (M)

Exce

ss N

oise

Fac

tor (F)

Competitor’s APDVoxtel Deschutes FSI™

Voxtel Deschutes BSI™

Voxtel Siletz™Voxtel Siletz UHG™

k = 0.40 k = 0.20 k = 0.02

k = 0

Measured excess noise factor vs. gain for Voxtel’s APDs and competitor’s APD (log scales), including McIntyre excess noise factor model for various impact ionization ratios k.

8

Responsivity vs noise in high-performance applications: Deschutes BSI™ vs Siletz™

The Deschutes BSI™ and Siletz™ lines are preferred for applications requiring the highest possible sensitivity for high-speed, low-light level applications that cannot be served by PIN photodiodes or Geiger APDs. These high gain-bandwidth products address a balance of tradeoffs for engineering NIR systems in high-speed, weak-signal regimes that include cutting-edge applications in 3D imaging (including eye-safe LIDAR), long-range optical communications, and science-grade NIR detection.

The choice of a Deschutes™ or Siletz™ APD depends on the other noise sources in the planned receiver system. The Deschutes BSI™ line offers a high-quality APD with superior response relative to competing commercial InGaAs APDs, as well as performance superior to InGaAs PIN photodiodes in most conditions. Siletz™ APD products offer superior avalanche gain and low excess noise factors, with the tradeoff of higher dark current.

These products are the most effective in high-performance applications where higher system noise is unavoid-able; in these conditions, high gain is needed and the APD’s additional noise contribution is less important. Because faster systems typically require the use of noisier amplifiers, the Siletz™ APD is optimal for high-bandwidth NIR sensing.

System noise vs. transimpedance amplifier (TIA) noise and photodetector selection. Calculated noise levels and approximate TIA noise regimes in which each product type is most sensitive. Noise levels and rated low-capacitance speeds* of a few commercial TIAs are marked on the x-axis to illustrate the tradeoff between speed and amplifier noise. See also these Voxtel photoreceiver products:

*Combinations of these TIAs and Voxtel APDs may not operate at the full rated speed of the TIA, which is usually quoted for a PIN photodiode. In

particular, the higher capacitance of 200-µm APDs reduces receiver speed considerably.

Siletz™ RIP1-JJAC, -JJQC, 2 3 GHz pp 47, 51

Siletz™ RIP1-NJAC, 1 GHz p 46

Deschutes BSI™ RIC1-JJAC, -JJQC, 2 3 GHz pp 44, 45

Deschutes BSI™ RDC1-NJAC, 300 MHz p 42

Deschutes BSI™ RJC1-NJAC, 200 MHz p 41

TIA Noise [pA/Hz1/2]

Noi

se E

quiv

alen

t Pow

er [f

W/H

z1/2 ]

0.001 0.01 0.1 1 10

100

10

1

75-µmSiletz™Deschutes BSI™PIN

165 MHz580 MHz

1 GHz 2.7 GHz1.7 GHz

TIA Noise [pA/Hz1/2]

Noi

se E

quiv

alen

t Pow

er [f

W/H

z1/2 ]

0.001 0.01 0.1 1 10

100

10

1

200-µmDeschutes BSI™ Siletz™PIN

165 MHz580 MHz

1 GHz 2.7 GHz1.7 GHz

Voxtel’s APD Product Series

Responsivity vs. Noise

9

Voxtel’s APD Product Series — Comparison Table

Deschutes FSI™

Deschutes BSI™ Siletz™ Siletz

UHG™

Spectral Range, λ

Min suggested <800 nm 950 nm 950 nm 950 nm

Typical range800 to

1550 nm1064 to

1550 nm1064 to

1550 nm1064 to

1450 nm

Max suggested 1750 nm 1700 nm 1700 nm 1550 nm

Operating Gain, M

Minimum 1 1 1 1

Typical range 5–20 5–20 5–40 5–1000

Maximum 20 20 50 6000

Responsivity at M = 10, [A/W]

λ = 1550 nm 7.2 10.1 10.1 <0.01 [A]

λ = 1064 nm 6.8 7.3 7.3 7.3

Excess Noise Factor, F(M, k)

keffective [B] ~0.2 ~0.2 ~0.02 ~0.02

M = 10 3.4 3.4 2.0 2.0

M = 15 4.3 4.3 2.2 2.2

M = 20 5.2 5.2 2.3 2.3

M = 50 — — 3 3

M = 1000 — — — 20

Dark Current at M = 1 of 75-µm APD, [nA] 0.56 [C] 1.9 [C] 23.4 [C] 1.38 [D]

Capacitance of 75-µm APD, [fF] 450 540 350 450 [E]

[A] 1550 nm–sensitive version available custom; please inquire [B] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [C] Referenced from M = 10[D] Referenced from M = 100; 50-µm APD [E] 50-µm APD

The following table provides typical specifications for Voxtel’s four series of APD products, to aid you in choos-ing the series that may best fit your needs. More information can be found on the following pages, and in the listings for individual products; see the Product Guide on pages 4 and 5.

Comparison Table

10

Spectral Response Comparisons

Siletz UHG™

Deschutes FSI™ Deschutes BSI™, Siletz™

800 900 1000 1100 1200 1300 1400 1500 1600

1

0.8

0.6

0.4

0.2

0

Wavelength [nm]

Nor

mal

ized

Res

pons

ivit

y

0

1

2

3

4

5

6

7

8

9

800 1000 1200 1400 1600 1800

Wavelength [nm]

Resp

onsi

vity

[A/W

]

0.0

0.2

0.4

0.6

0.8

1.0

900 1100 1300 1500 1700

Wavelength [nm]Re

spon

sivi

ty [A

/W],

11

Backside-Illuminated APD Submount Layouts

Mechanical Information: APD Die and Submounts

Frontside-Illuminated APD Die Layouts

Deschutes FSI™ frontside-illuminated APDs are delivered as bare die. From left: 30-, 75-, and 200-µm APDs.

Backside-illuminated APDs are delivered on submounts. Left: Deschutes BSI™, Siletz™. Right: Siletz-UHG™) .

735 µm

860 µm

150 μm

APD

Anode

Cathode

25 μm

80 μ

m

175 μm 113 μm

350 μm

Ø 28 μm

Ø 75 μm

175

μm

350

μm

25 μ

m16

0 μm

25 μm

80 μ

m

175 μm 113 μm

350 μm

Ø 76 μm

Ø 75 μm

175

μm

350

μm

25 μ

m16

0 μm

25 μm

65 μm

65 μ

m

175 μm

350 μm

Ø 200 μm

Anode Ø 75 μm

175

μm

350

μm

25 μ

m

E EBC

1.52 mm

940 µm

Temp.Sense

150 μm

APD

100 μm

E EBC

Ano

de

Cath

ode

Cath

ode

12

Deschutes FSI™Avalanche Photodiodes

Deschutes FSI™ VFI1-DAZA 25 µm, 6-GHz Avalanche Photodiode

Min Typical Max Units

Spectral Range, λ 800 1064–1550 1750 nm

Active Diameter 25 µm

Bandwidth 6 GHz

Operating Gain, M 1 15 20

Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0

A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3

Noise Spectral Density at M = 10 0.15 pA/Hz1/2

Dark Current [A] 2.2 2.6 nA

Dark Current Dependence on Temperature [B] 0.22 dB/K

Capacitance [C] 0.23 pF

Breakdown Voltage, VBR [D] 30 37 40 V

ΔVBR/ΔT 15 17 19 mV/K

Absolute Reverse Current 3 mA

Absolute Forward Current 5 mA

Absolute Operating Temperature−200

73

0–30

273–303

52

325

°C

K

[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 298 K; Idark > 0 1 mA

APD Product Listings Avalanche Photodiodes

13


Deschutes FSI™ VFI1-JAZA 75 µm, 2-GHz Avalanche Photodiode




Bandwidth 2 GHz



A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 5.6 7 nA








73

0–30

273–303

52

325

°C

K


14


Deschutes FSI™ VFI1-NAZA 200 µm, 200-MHz Avalanche Photodiode




Bandwidth 200 MHz



A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 6 20 24 nA








73

0–30

273–303

52

325

°C

K


15

Deschutes BSI™Avalanche Photodiodes

Deschutes BSI™ VFC1-EBZA 30 µm, 6-GHz Avalanche Photodiode




Bandwidth 6 GHz



A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 8.0 10.8 12.5 nA


Submounted Capacitance [C] 0.28 pF



Absolute Optical Input 5 dBm




198

0–30

273–303

75

348

°C

K


16


Deschutes BSI™ VFC1-JBZA 75 µm, 2.5-GHz Avalanche Photodiode




Bandwidth 2.5 GHz



A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3



Dark Current Dependence on Temperature 0.24 dB/K

Submounted Capacitance [C] 0.35 0.54 0.57 pF







198

0–30

273–303

75

348

°C

K


17


Deschutes BSI™ VFC1-NBZA 200 µm, 550-MHz Avalanche Photodiode




Bandwidth 550 MHz



A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3



Dark Current Dependence on Temperature 0.24 dB/K

Submounted Capacitance [C] 2.2 pF







198

0–30

273–303

75

348

°C

K


18

Siletz™Avalanche Photodiodes

Siletz™ VFP1-EBZA 30 µm, 2.3-GHz Avalanche Photodiode




Bandwidth 2.3 GHz

Operating Gain, M 1 5–40 50


A/Wλ = 1064 nm 6.6 7.3 7.8


keffective [A] <0.02

M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 6.6 nA

Dark Current Dependence on Temperature [C] 0.11 dB/K

Submounted Capacitance 60 fF


ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] T = 294 K; Idark > 0 1 mA

19


Siletz™ VFP1-JBZA 75 µm, 2.3-GHz Avalanche Photodiode




Bandwidth 2.3 GHz



A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 12 23.4 40 nA


Submounted Capacitance 350 fF


ΔVBR/ΔT 29 mV/K


20


Siletz™ VFP1-NBZA 200 µm, 350-MHz Avalanche Photodiode




Bandwidth 350 MHz



A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 90 165 195 nA


Submounted Capacitance 1.5 pF


ΔVBR/ΔT 29 mV/K


21

Siletz UHG™Avalanche Photodiodes

Siletz UHG™ VFS1-HBZA 50 µm, 30-MHz Avalanche Photodiode




Bandwidth 30 MHz

Operating Gain, M [A] 1 1000 6000

Responsivity at M = 100λ = 1550 nm <0.1

A/Wλ = 1064 nm 66 73 78


keffective [B] ~0.02

M = 50 3

M = 500 16

M = 1000 20


Dark Current at M = 1 [C] 0.6 nA

Submounted Capacitance 0.5 pF


[A] Low-noise operation to M = 1000 [B] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [C] Referenced from M = 1000 [D] T = 294 K

22

Siletz UHG™Avalanche Photodiodes

Output and Gain Excess Noise vs. Gain

Excess noise factor of the Siletz UHG™ VFS1-HBZA as a function of gain, compared with standard telecom InGaAs/InP APDs. (Note that standard telecom APDs cannot be operated above M ~ 15.)

72 73 74 75 76 77 78 79 80 81 82

105

104

103

102

10

Light Current

Dark Current

Avalanche Gain

Reverse Bias [V]

Curr

ent [

A]

Gai

n

10–4

10–5

10–6

10–7

10–8

0 500 1000

1

1000

100

10

Exce

ss N

oise

Fac

tor,

F

Gain (M)

k = 0

k = 0.40 (Telecom APD)

k = 0.02

Siletz UHG™ SCM-APD

Current and gain vs. reverse bias at ~100 nW light power.

Impulse Response

0 1 2 3 4 5 6 7 8 9 10

1

0.5

0

Impulse Response

Time [ns]N

orm

aliz

ed R

espo

nse

Spectral Response

800 900 1000 1100 1200 1300 1400 1500 1600

1

0.8

0.6

0.4

0.2

0

Wavelength [nm]

Nor

mal

ized

Res

pons

ivit

y

Normalized spectral responsivity.

Siletz UHG™ VFS1-HBZA

23

Mechanical Information: Packaged APDs

TO-46 Package

TO-8 Package

Pinout 1) TEC – 4) TEC + 9) Temp Sense – 10) Temp Sense + 11) APD Anode (P) 12) APD Cathode (N)

Ø 15.24

5.72

2.87

1.91

9.53

Ø 0.460.79

0.79 1 4

12 11 10 9

25.40 ± 0.64

9.91

7.16 mm

5.38

2.24 ± 0.31

APD Plane

Active area Ø 1.52

Pinout1) APD Cathode2) APD Anode3) Ground, T Sense –4) T Sense +

SIDE VIEWwith cap

TOP VIEWheader only

Ø .019Ø .016

Ø .171Ø .161

Ø .100

.700

.500

.043

.031

.045

.037

Ø .026Ø .020

.072 in183 mm

Ø .212Ø .209

Ø .048Ø .046.010

.007

.006

.000

45° ± 0.5°

.118

.114

.012

.009

.046

.042

.010 max.

1

2

3

4

Packaged APDs

24

Deschutes FSI™Packaged APDs

Deschutes FSI™ VFI1-DCAA 25 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 2.2 2.6 nA


Total Capacitance [C] 0.52 pF

Bandwidth 6 GHz






73

0–30

273–303

52

325

°C

K


25


Deschutes FSI™ VFI1-JCAA 75 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 5.6 7 nA



Bandwidth 2 GHz






73

0–30

273–303

52

325

°C

K


26


Deschutes FSI™ VFI1-NCAA 200 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 200 MHz






73

0–30

273–303

52

325

°C

K


27


Deschutes FSI™ VFI1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3

Noise Spectral Density at 200 K [A] 16 fA/Hz1/2

Dark Current [B] 5.6 7 nA


Total Capacitance [D] 1.4 pF

Bandwidth 2 GHz

Rated Package Temperature [E] 218 K

TEC Maximum Heat Transfer, Qmax [F] 0.4 W

TEC Maximum Cooling, ΔTmax 110 K

TEC Maximum Current, Imax 1.4 A

TEC Maximum Voltage, Vmax 1.9 V

Breakdown Voltage, VBR [G] 30 37 40 V





73

0–30

273–303

52

325

°C

K

[A] M = 10 [B] M = 10, T = 298 K [C] 250 K < T < 300 K [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA

28


Deschutes FSI™ VFI1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [B] 6 20 24 nA



Bandwidth 200 MHz











73

0–30

273–303

52

325

°C

K


29

Deschutes BSI™Packaged APDs

Deschutes BSI™ VFC1-JCAA 75 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 2.5 GHz







198

0–30

273–303

75

348

°C

K


30


Deschutes BSI™ VFC1-NCAA 200 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 550 MHz







198

0–30

273–303

75

348

°C

K


31


Deschutes BSI™ VFC1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 2.5 GHz












198

0–30

273–303

75

348

°C

K


32


Deschutes BSI™ VFC1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 550 MHz












198

0–30

273–303

75

348

°C

K


33

Siletz™Packaged APDs

Siletz™ VFP1-JCAA 75 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 12 23.4 40 nA



Bandwidth 2.3 GHz

Breakdown Voltage, VBR [E] 70 74 80 V

ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] M > 3 [E] T = 294 K; Idark > 0 1 mA

34


Siletz™ VFP1-NCAA 200 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 90 165 195 nA


Bandwidth 350 MHz


ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] Referenced from M = 10 [C] M > 3 [D] T = 294 K; Idark > 0 1 mA

35


Siletz™ VFP1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9

Noise Spectral Density at 200 K [B] 227 fA/Hz1/2

Dark Current at M = 1 [C] 12 23.4 40 nA


Bandwidth 2.3 GHz







ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] M = 10 [C] Referenced from M = 10 [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA

36


Siletz™ VFP1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9

Noise Spectral Density at 200 K [B] 603 fA/Hz1/2

Dark Current at M = 1 [C] 90 165 195 nA


Bandwidth 350 MHz







ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] M = 10 [C] Referenced from M = 10 [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA

37

APD Photoreceivers

Typical Voxtel Photoreceiver Typical Block Diagram

Voxtel’s line of APD photoreceivers achieve industry-leading sensitivity with bandwidth ranging from the MHz to GHz scales. These receivers are hermetically sealed in TO-8 and TO-46 packages, and integrate a Voxtel APD with a transimpedance amplifier (TIA) to provide wideband, low-noise preamplification of signal current from the APD. The APD and TIA are integrated on a ceramic submount, lowering parasitic capacitance and thereby maximizing bandwidth and minimizing noise.

The receivers integrate a calibrated temperature sensor, capacitive decoupling, separate package and cir-cuit grounding, and include differential output to allow users easy integration into their system electronics. Photoreceivers in TO-8 packages also include thermoelectric cooling to stabilize the APD gain over the range of application environments.

TSense+ (B/C)

TSense– (E)

VCC +3.3V

TEC–

TEC++APD

Gnd

Gnd

N/C

Out+

Out–

N/C

TSense

38

APD Photoreceivers: Mechanical Information

TO-8 Package, Rev. C

TO-8 Package, Rev. D

Fiber Optic Package

Ø 15.25 mm

10.16 mm

Ø 0.45 mm

Ø 1.50 mm

1) Gnd

2) +APD

3) TEC–

4) TSense–

5) TEC+

6) TSense+

Pinout (from boom)

7) Out–

8) Gnd

9) Out+

10) VCC +3.3V

11) N/C

12) N/C

0.80 mm

5.08

mm

2.54

mm

0.80 mm

1 2 3

122.09 mm Acve area4.06 mm

0.38 mm

SIDE VIEWwith cap

BOTTOM VIEW

Ø 15.25 mm

10.16 mm

Ø 0.45 mm

Ø 1.50 mm

1) Gnd

2) +APD

3) TEC–

4) TSense–

5) TEC+

6) TSense+

Pinout (from boom)

7) Out–

8) Gnd

9) Out+

10) VCC +3.3V

11) N/C

12) N/C

0.80 mm

5.08

mm

2.54

mm

0.80 mm

1 2 3

12

SIDE VIEWwith cap

BOTTOM VIEW

2.39 mm

6.65 mm

0.38 mm

6.35 mm

Acve area

1 2 3

12

10.16 mm

Ø 15.25 mm

Ø 0.45 mm

Ø 1.50 mm

0.80 mm

5.08

mm

2.54

mm

0.80 mm

Ø 16.50 mm

Ø 8.00 mm

11.30 mm 7.00 mm 1000 mm

0.70 mm

6.35 mm

Ø 3.81 mm

Ø 16.50 mm

BOTTOM VIEW TOP VIEWSIDE VIEW

See also page 50.

39

Deschutes FSI™APD Receivers

Deschutes FSI™ RDI1-NJAC 200 µm, 200-MHz Photoreceiver




Bandwidth 200 MHz

APD Operating Gain, M 1 15 20

Receiver Responsivity at M = 10

λ = 1550 nm 132kV/W

λ = 1064 nm 125


M = 5 2.1

M = 10 3.4

M = 15 4.3

Noise Equivalent Power at M = 20

λ = 1550 nm 3.1nW

λ = 1064 nm 3.3

APD Dark Current at M = 10 6 20 24 nA

Low-Frequency Cutoff [A] 30 kHz

APD Breakdown Voltage, VBR [B] 30 37 40 V


TEC Power 0.8 A @ 2.2 V

TEC Cooling, ΔTmax 43 K

TIA Power 20 mA @ 3.3 V

Thermal Load 66 mW

Output Impedance [C] 60 75 90 Ω

TIA AC Overload 2.0 mAP–P

Window Thickness 0.5–0.8 mm

Window Transparencyλ = 1550 nm 98%

λ = 1064 nm 95%

[A] −3 dB, 1 µA input [B] T = 295 K [C] Single-ended; 150 Ω differential

40

Deschutes FSI™APD Receivers

Deschutes FSI™ RDI1-JJAC 75 µm, 580-MHz Photoreceiver




Bandwidth 580 MHz



λ = 1550 nm 132kV/W

λ = 1064 nm 125


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 3.1nW

λ = 1064 nm 3.3

APD Dark Current at M = 10 5.6 7 nA







Thermal Load 66 mW

Output Impedance [D] 60 75 90 Ω




λ = 1064 nm 95%

[A] −3 dB, 1 µA input [B] T = 295 K [C] Single-ended; 150 Ω differential

41

Deschutes BSI™APD Receivers

Deschutes BSI™ RJC1-NJAC 200 µm, 200-MHz Photoreceiver




Bandwidth 200 MHz



λ = 1550 nm 372kV/W

λ = 1064 nm 228


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 1.8nW

λ = 1064 nm 2.3








Thermal Load 66 mW





λ = 1064 nm 95%

Temperature Sensor Sensitivity 2.18 mV/K

[A] −3 dB, 1 µA input [C] at T = 298 K [B] T = 295 K [D] Single-ended; 150 Ω differential

See also page 43.

42


Deschutes BSI™ RDC1-NJAC 200 µm, 300-MHz Photoreceiver




Bandwidth 300 MHz



λ = 1550 nm 372kV/W

λ = 1064 nm 228


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 3.2nW

λ = 1064 nm 4.1








Thermal Load 66 mW





λ = 1064 nm 95%

Temperature Sensor Sensitivity 2.18 mV/K

[A] −3 dB, 1 µA input [C] at T = 298 K [B] T = 295 K [D] Single-ended; 150 Ω differential

43


Deschutes BSI™ RJC1-NJAC

Deschutes BSI™ RDC1-NJAC

250

200

150

100

50

0

0.1 0.30.2 0.5 1 32

Signal Power [µW]

Resp

onsi

vity

[kV/

W] Avg.

95%90%

Avg.95%90%M=10

M=20

Linearity of Response

Linearity of response in the RJC1-NJAC receiver; applies also to RDC1-NJAC. 20-MHz modulated signal, 1064 nm.

20 25 30 35 40 45 50

100

10

1

Light + Dark Current

Dark Current

Avalanche Gain

Reverse Bias [V]

Out

put C

urre

nt [A

]

Gai

n

10–5

10–6

10–7

10–8

10–9

10–10

278 K293 K

Output and Gain: RDC1-NJAC 300-MHz

Output current and gain vs. bias for cooled and uncooled photo-receivers at ~100 nW light power.

44


Deschutes BSI™ RIC1-JJAC 75 µm, 2-GHz Photoreceiver




Bandwidth 2 GHz



λ = 1550 nm 66kV/W

λ = 1064 nm 41


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 13.6nW

λ = 1064 nm 18.8







Thermal Load 83 mW

Output Impedance [C] 42.5 50 57.5 Ω

Data Output Swing 220 300 500 mVP–P




λ = 1064 nm 95%

[A] −3 dB, 40 µA input [C] Single-ended; 100 Ω differential [B] T = 295 K

45


Deschutes BSI™ RIC1-JJQC 75 µm, 2-GHz Photoreceiver



MM Fiber-Optic Connection Multimode 62.5/125, FC connector [A] µm

Bandwidth 2 GHz



λ = 1550 nm 66kV/W

λ = 1064 nm 41


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 13.6nW

λ = 1064 nm 18.8


Low-Frequency Cutoff [B] 65 kHz

APD Breakdown Voltage, VBR [C] 45 50 55 V




Thermal Load 83 mW

Output Impedance [D] 42.5 50 57.5 Ω





λ = 1064 nm 95%

[A] Other sizes/connectors available [B] −3 dB, 40 µA input [C] T = 295 K [D] Single-ended; 100 Ω differential

46

Siletz™APD Receivers




Bandwidth 1 GHz

APD Operating Gain, M 1 5–40 50


λ = 1550 nm 133kV/W

λ = 1064 nm 96



M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 12.1nW

λ = 1064 nm 15.4

APD Dark Current at M = 1 [B] 90 165 195 nA

Low-Frequency Cutoff [C] 65 kHz

APD Breakdown Voltage, VBR [D] 70 74 80 V

ΔVBR/ΔT 29 mV/K



Thermal Load 83 mW

Output Impedance [E] 42.5 50 57.5 Ω





λ = 1064 nm 95%

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] Referenced from M = 10 [D] T = 294 K [C] −3 dB, 1 µA input [E] Single-ended; 100 Ω differential

Siletz™ RIP1-NJAC 200 µm, 1-GHz Photoreceiver

47





Bandwidth 2.1 GHz



λ = 1550 nm 133kV/W

λ = 1064 nm 96



M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 8.2nW

λ = 1064 nm 10.5

APD Dark Current at M = 1 [B] 12 23.4 40 nA



ΔVBR/ΔT 29 mV/K



Thermal Load 83 mW

Output Impedance [E] 42.5 50 57.5 Ω





λ = 1064 nm 95%

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] Referenced from M = 10 [D] T = 294 K [C] −3 dB, 1 µA input [E] Single-ended; 100 Ω differential

Siletz™ RIP1-JJAC 75 µm, 2.1-GHz Photoreceiver

48


2.488 Gb/s

622 Mb/s

156 Mb/s

2.125 Gb/s

Bit Rate

–50 –45 –40 –35

10–1

10–2

10–3

10–4

10–5

10–6

10–7

10–8

10–9

10–10

10–11

10–12

Bit

Err

or R

ate

Optical Power [dBm]

Siletz™ RIP1-JJAC

Siletz™ RIP1-JJQC

Bit Error Rate

Bit error rate (BER) vs. input optical power for the RIP1-JJAC receiver; applies also to RIP1-JJQC. 20-MHz modulated signal, 1064 nm.

49




Active DiameterActual 75

µmEffective 300

Bandwidth 1.5 GHz



λ = 1550 nm 311kV/W

λ = 1064 nm 225



M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 11.0nW

λ = 1064 nm 14.1


λ = 1550 nm 12.5nW

λ = 1064 nm 15.8

APD Dark Current at M = 1 [B] 12 23.4 40 nA



ΔVBR/ΔT 29 mV/K

TIA Power 20 mA @ 3.3 V 24 mA @ 4.5 V

Thermal Load 66 108 mW

Output Impedance [E] 50 Ω

Data Output Swing 140 270 mVP–P

TIA AC Overload [F] 8 mAP–P

Lens Transparencyλ = 1550 nm 98%

λ = 1064 nm 95%

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [B] Referenced from M = 10 [E] Single-ended; 100 Ω differential [C] −3 dB, 1 µA input [F] At RTIA input [D] T = 294 K

Siletz™ R2P1-JCAA 75 µm, 1.5-GHz Ball-Lens-Coupled Photoreceiver

50


Siletz™ R2P1-JCAA

Mechanical Information

Impulse Response Spatial Response with Ball Lens

Pinout1) DOUT2) VDD3) V+ APD4) DOUT B5) GND

111

Ø 5.31

1.4

Ø 4.22 mm±0.038

5

123

4

57°57°

82° 82°

Ø 2.54

2.55

4.705.38

BOTTOM VIEW SIDE VIEWwith cap

TOP VIEWheader only

0 5 10 15 20 25

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

−0.1

Time [ns]

Resp

onse

[V]

−400 −300 −200 −100 0 100 200 300 400

1

0.8

0.6

0.4

0.2

0

Position [µm]

Nor

mal

ized

Res

pons

e

51


Siletz™ RIP1-JJQC 2.1-GHz Fiber-Coupled Photoreceiver



MM Fiber-Optic Connection Multimode 62.5/125, FC connector [A] µm

Bandwidth 2.1 GHz



λ = 1550 nm 133kV/W

λ = 1064 nm 96


keffective [B] <0.02

M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 8.2nW

λ = 1064 nm 10.5

APD Dark Current at M = 1 [C] 12 23.4 40 nA

Low-Frequency Cutoff [D] 65 kHz

APD Breakdown Voltage, VBR [E] 70 74 80 V

ΔVBR/ΔT 29 mV/K



Thermal Load 83 mW

Output Impedance [F] 42.5 50 57.5 Ω



[A] Other sizes/connectors available [B] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 53/Ref 1 [C] Referenced from M = 10 [D] −3 dB, 1 µA input [E] T = 294 K [F] Single-ended; 100 Ω differential

See also page 48.

52

APD Receiver Support Electronics ModulesVoxtel’s Receiver Support Electronics Modules provide an easy way to operate our TO-8–packaged receivers without having to design and build custom optics. They can be used as optical receiver modules (ORMs) for system prototyping, or for incoming inspection, test, and characterization of APD receivers.

These modules include a 5 V AC–DC converter to provide power and grounding, and a grounding plug for additional optional grounding. The bias supplied to the receiver can be monitored through a BNC connection on the back plate, and is adjustable if necessary using a potentiometer. When the module is ordered together with a receiver, the module will be shipped with the supply voltage adjusted optimally for that receiver.

VCC +3.3V

TEC –

TEC +

APD-TIA Receiver (TO-8)

APD Receiver Support Module

RTIA Bias

APD Bias

APD Bias Monitor

APD Bias Control

5V, 3A in; GND

Out 1

GND

Out 2

TEC ControlTSense+

TSense–

+APD

Gnd

Gnd

N/C

Out+

Out–

N/C

TSense

4x Ø .089 Thru All4–40 UNC –2B Thru All

User-available holes 2x Ø .281 Thru All

2.08

9

.750 0

.750

2.08

9

1.166

1.181

4x Rubber Feet

1.1051.041

0

1.105

0 .380

.468

3.45

0

4.22

2

5.0005.500

0

.474

1.522

2.147

2.772

3.4603.847

Support Module: Functional Diagram

Support Module: Mechanical Information

53

[1] R. J. McIntyre, “Multiplication Noise in Uniform Avalanche Diodes,” IEEE Transactions on Electron Devices 13(1), 164–168 (1966).

[A] G. M. Williams, “GHz-Rate Single-Photon-Sensitive Linear-Mode APD Receivers,” Proceedings of SPIE 7222, 72221L (2009).

[B] G. M. Williams, M. A. Compton, and A. S. Huntington, “High-Speed Photon Counting with Linear-Mode APD Receivers,” Proceedings of SPIE 7320, 732012 (2009).

References

Single-Photon Counting: Voxtel Publications

[A] R. J. McIntyre, “A New Look at Impact Ionization — Part I: A Theory of Gain, Noise, Breakdown Probability, and Frequency Response,” IEEE Transactions on Electron Devices 46(8), 1623–1631 (1999).

[B] P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, “A New Look at Impact Ionization — Part II: Gain and Noise in Short Avalance Photodiodes,” IEEE Transactions on Electron Devices 46(8), 1632–1639 (1999).

[C] M. A. Saleh, M. M. Hayat, B. E. A. Saleh, and M. C. Teich, “Dead-Space-Based Theory Correctly Predicts Excess Noise Factor for Thin GaAs and AlGaAs Avalanche Photodiodes,” IEEE Transactions on Electron Devices 47(3), 625–6333 (2000).

[a] G. M. Williams, “GHz-Rate Single-Photon-Sensitive Linear-Mode APD Receivers,” Proceedings of SPIE 7222, 72221L (2009).

[b] G. M. Williams, M. A. Compton, and A. S. Huntington, “High-Speed Photon Counting with Linear-Mode APD Receivers,” Proceedings of SPIE 7320, 732012 (2009).

©Voxtel, Inc 2011

voxtel apd catalog

Documents