very high temperature (400+ °c) high-power silicon … · doe energy storage & power...
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Energy Storage Systems Program
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DOE Energy Storage & Power Electronics Research ProgramsOctober 8, 2009
Marcelo Schupbach, Ph.D.Chief Technology Officer
APEI, Inc.535 Research Center Blvd.Fayetteville, AR 72701
Phone: (479)-443-5759
Email: [email protected]: www.apei.net
Very High Temperature (400+ °C) High-Power Silicon Carbide (SiC) Power Electronics
Converter
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Energy Storage Systems Program
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Overview• Broader Impact of SiC-based Power Converter• Phase I Review• Phase II Review• Related Activities• Summary
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Theoretical Electrical Advantages Very high voltage blocking Very low switching losses
(up to 1/10th of Silicon) Low on-resistance Up to 10s of GHz switching range
Theoretical Thermal Advantages SiC device theoretical limit exceeds 600 C
Very high power densities can be achievedwith these junction temperatures
SiC has a very high thermal conductivity—excellent for power devices and thermal transfer, increases power density
Disadvantage: No device packaging technology exists to take full advantage of thermal capabilitiesRequires packaging advances in die attach, interconnects, and reliability
Advantages of Silicon Carbide (SiC)Conceptual View
SiC Power ModuleStandard Power Module
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0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.040
200
400
Vdc
[V]
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.040
10
20
Idc
[A]
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.040
5000
10000
Pow
er in
[W]
Vdc = 318 V
Idc = 12 Arms
Pinavg = 3.125 kW
Time [s]
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04-500
0
500
Vloa
d [V
]
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04-20
0
20
Iload
[A]
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.040
5000
10000
Pow
er [W
]
Time [s]
Vload = 194 Vrms
Iload = 14 Arms
Pload avg = 2.7 kW
• DOE SBIR, Topic: 1.a Wide Band Gap Power Converter Application (FY05)
• Goals– Multi-chip power module– High temperature operation – Size reduction– 3-kW 120V single-phase
inverter (250 ºC+)Input Power Output Power
> 90% efficiency (estimated)
Phase I: Very High Temperature (400+ °C) High-Power Silicon Carbide (SiC) Power Electronics Converter
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DOE ESS Phase I SBIR Review*Note: this portion of the Siinverter was not included in thecalculations.
APEI, Inc.’s SiC-based MCPM power inverter module has an estimated power density of 11 W/in3 (using only passive cooling)
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DOE ESS Phase II SBIR• Title: High Power Density (100 kW) Silicon Carbide (SiC)
Three-Phase Inverter (FY06)• Goals of Phase II:
1. Develop a higher power SiC-based fully-functional multi-purpose inverter
2. Improved efficiency (> 96%) 3. Large weight and volume reduction 4. Similar functionality
• Due to limited power of single SiC dies (switches), power target was reduced to ~ 10 kVA
• Solar inverter range• Ratings of Phase II Prototype
– Power: 10 kVA– VDC from 350 V to 700 V– Efficiency > 96%– Ambient Temperature > 75 °C– Weight << 100 lbs– Volume << 2.5 cubic foot
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Comparison of Used Si and SiC Devices
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Energy Storage Systems Program
10-kVA Three-Phase Inverter Prototypes
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Characterization of SiC InverterEfficiency Measurements on SiC Inverter Variable resistive load Various LC output filters were used Several switching frequencies: 8 kHz, 10 kHz
and 20 k Hz PWM generation: sine triangular and space vector Multiple DC bus voltages from 450 VDC to 600 VDC Measurements were taken under constant ma
Load Voltages
DC Input Voltage
SiC57ns
Si208ns
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Efficiency Passive Cooling System
California Energy Commission European Peak
Heat Sink Size Volume (cm3) /
Weight (kg)
VolumetricPower Density
(W / cm3)
Si IGBT Inverter 95.0 % 94.8 % 95.5 % 7 / 6.12 1.75SiC JFET Inverter 98.3 % 98.1 % 98.6 % 7 / 6.12 1.75SiC JFET Inverter @ 150 °C 97.5 % 97.3 % 97.8 % 2.3 / 1.4 8.6
8.6 W/cm2
7.3 kW/kg Power density
increases 4.5× from95°C to 150°C
SiC @ 20 kHz (Filtered)
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Energy Storage Systems Program
High Power Density Characterization
Three phase SiC inverter efficiency vs. temperature Three phase inverter operating at ~233 °C
93.5
94
94.5
95
95.5
96
0 50 100 150 200 250
Effic
ienc
y %
Temperature °C
4.8kW
Heatsink Dimension = 7” × 5” × 1”Volume = 35 in3 (~ 10× reduction)
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- 1200V/150A SiC Half Bridge Intelligent Power Modules -
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SiC Module– 8 parallel SiC DMOSFETs per “switch position”– Includes miniaturized integrated high temperature gate driver– Module demo operation at 250 °C junction– Packaging operational to 300 °C junction
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1200V/150A SiC Half Bridge Intelligent Power Modules
Ch4 – Bus voltageCh2 – Output currentCh3 – VDS of high side
switch
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- SiC Power Module Demonstration -
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Demonstration System– 300 V DC bus input– 60 V DC motor– 60 A peak current– 15 kHz switching frequency– 250 °C junction
temperature
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Summary Goal of Phase II Work
– Develop a higher power (10-kVA) all-SiC three-phase inverter – System efficiency (>96%)– Weight and volume minimization options
Contributions of Phase II Work– Design, fabrication, testing and characterization of
10-kVA all SiC Inverter• Selection and full characterization of used SiC devices (i.e.,
static and dynamic characterization vs. temperature, statistical dispersion)
• Paralleling of multiple SiC devices• Developed high temperature (300+ °C) SiC device packaging
technology (i.e., wire bonds, die attach, substrate and encapsulation)
• Developed of gate driver circuitry
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Summary Contributions of Phase II Work (Cont.)
– Demonstration of high efficiency operation: • Multiple output filters and PWM modulation schemes were
compared• Performance comparison to “equivalent” Si system• Measured SiC system showed an CEC = 98.3% and EE = 98.1%
– Demonstration that important weight and volume minimizationare possible (tradeoff studies)
SiC device technology has the potential of greatly increase the performance of power converters– Higher efficiency– Smaller size– Higher reliability– And ultimate lower cost
Developed technology received a 2009 R&D 100 award
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Acknowledgments
• APEI’s Partners– GeneSiC– State of Arkansas– Rohm Corp.– University of Arkansas
• Energy Storage System Program, Dr. Imre Gyuk• Sandia National Laboratories, Dr. Stan Atcitty