user manual tv power demoboard tea8818db1440user manual tv power demoboard tea8818db1440 tea8818 +...

User Manual TV Power Demoboard TEA8818DB1440 TEA8818 + TEA1995 130W 13V and 90V power supply Rev. 0.01— 23 june 2016

Document information Info Content Keywords TEA88181T, TEA88182T, TEA1995T, 130W, LLC, resonant, half bridge,

PFC, controller, converter, burst mode, power supply, demo board, high efficiency.

Abstract The TEA88181T is a digital resonant LLC controller and the TEA88182T is a PFC converter, both connected via digital link as combo devices. Optionally these two IC’s together can be combined with the SR controller TEA1995T for the low voltage output of secondary side, which results in a high efficiency resonant converter. This document describes such a resonant power supply design, with nominal output power of 130 W (13V/5A + 90V/0.7A). It operates in normal mode for high and medium power levels, in low power mode at medium and low power levels and in burst mode at (very) low power levels. Low power mode and burst mode operation provides a reduction of power losses, resulting in a higher efficiency at lower output power levels. Power levels for switching over from one mode to another mode can be selected by the end customer by adjusting component values. The efficiency at nominal power is well above 88%. No load power consumption is well below 100 mW. At 250mW (on 13V) output power, the input power is lower than 500 mW (complies with EuPlot6).

NXP Semiconductors UMxxxxx prototype demoboard

UMxxxxx All information provided in this document is subject to legal disclaimers. © NXP B.V. 2015. All rights reserved.

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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Revision history Rev Date Description 0.0 11-04-2016 First draft

0.1 23-06-2016 Second draft

http://www.nxp.com/

mailto:[email protected]



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1. Introduction

Fig 1. General warning

1.1 Scope of this document This document describes a 130 W power supply board using the TEA88181, TEA88182 and TEA1995. A functional description is given, supported by a set of preliminary measurements to show the main characteristics.

1.2 TEA88181T and TEA88182T The TEA88181T is a half bridge resonant converter (HBC) and the TEA88182 is a controller for Power Factor Correction (PFC).

Both IC’s provide drive functionality for the related discrete MOSFET(s).

The resonant controller part (TEA88181T) is a high voltage controller for zero voltage switching LLC resonant converter. The resonant controller includes a high voltage level shift circuit, high voltage internal starting up switch and several protection features such as over current protection, open loop protection, capacitive mode protection and a general purpose latched protection input.

In addition to the resonant controller, the TEA88182T contains a Power Factor Correction (PFC) controller. The efficient operation of the PFC is obtained by functions such as quasi-resonant operation at high power levels and quasi-resonant operation with valley skipping at lower power levels. Over current protection, overvoltage protection and demagnetization sensing, ensures safe operation in all conditions.

The TEA88181T and TEA88182 are working together in close cooperation; in this way it is possible to improve the overall performance even further.

Using the TEA1995 as synchronized rectifier controller at the secondary side allows MOSFET’s instead of rectifying diodes, the overall efficiency of the complete system will benefit even more.

The combination of PFC, resonant controller and SR controller makes these devices very suitable for all kind of applications, especially when a high efficiency is required over the whole power range, from no load to maximum output load.



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Fig 2. Pin configuration of the TEA88181T (HBC) and the TEA88182T (PFC)

1.3 TEA1995T The TEA1995T is the first product of a new generation of Synchronous Rectifier (SR) controller ICs for switched mode power supplies. It incorporates an adaptive gate drive method for maximum efficiency at any load.

The TEA1995T is a dedicated controller IC for synchronous rectification on the secondary side of resonant converters. It has two driver stages for driving the SR MOSFETs, which rectify the outputs of the central tap secondary transformer windings. The two gate driver stages have their own sensing inputs and operate independently.

Fig 3. Pin configuration of the TEA1995T (SR)



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1.4 Setup of the TEA8818DB1440 130W 13V/90V power supply

Fig 4. TEA88181T, TEA88182T and TEA1995T prototype demo board 130W

The board can operate at a mains input voltage between 90V and 264V (universal mains).

The evaluation board contains two sub-circuits:

• A Power Factor Converter (PFC) of BCM-type

• A Half Bridge Converter (HBC) of resonant LLC-type

Both converter controllers are working together in order to optimize the total supply behavior.

The purpose of the board is to show the operation of the combination of converters (TEA88181, TEA88182 and TEA1995) in a multiple output supply including all modes. The performance passes general standards including the EuP lot6 requirements and can be used a starting point for further development.



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2. Power supply specification

Table 1. Input specification Symbol Description Condition Specification Units

Vi input voltage - 90 to 264 V

fi input frequency - 47 to 64 Hz

Pi(no load) no load input power at 230 V , 50 Hz < 100 mW

Table 2. Output specification Symbol Description Condition Specification Unit

VOUT1 output voltage - 13 V

IOUT1 continuous output current

See Error! Reference source not ound.

0 to 5 A

IOUT1(max) max output current without OPP protection at nominal POUT2 (90V x 700mA)

7.4 A

IOUT1(peak) peak output current During less than 50ms at nominal POUT2 (90V x 700mA)

> 10 A

VOUT2 output voltage - 90 V

IOUT2 continuous output current

See Error! Reference source not ound.

0 to 700 mA

tholdup hold-up time at 115 V , 60 Hz, Full load >10 ms

tstartup startup time at 115 V , 60 Hz ≤ 0.5 s

η Efficiency Average ≥ 88 %

Remark on circuit design: The PFC converter design can be further optimized to fit the 130W requirements. For example a smaller value of the boost capacitor (C116, C117) can be chosen (82PF for example).

The output capacitors at Vout1 and Vout2 are coupled, improving response on load steps especially during Burst Mode transitions.

Vout1 rectification has been implemented by SR driver TEA1995 and power Mosfets. This improves the efficiency for higher loads. As alternative solution rectifier diodes can be used. A provision for these rectifier diodes has been made in the board layout.



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3. Measurements

3.1 Test facilities 1. Oscilloscope: Yokogawa DL9505L

2. AC Power Source: Agilent 6812B

3. Electronic load: Agilent 6063B + Chroma 63108

4. Digital power meter: Yokogawa WT210

3.2 Efficiency Efficiency measurements were taken after the system is stable. The output voltage and current were measured directly at the PCB connector. Measurements were performed for 115 V; 60 Hz and 230 V; 50 Hz.

For these measurements the load percentage is valid for both outputs. For example 50% load: VOUT1 (13V) = 2.5A and VOUT2 (90V) = 350 mA.

Although the CoC requirement is valid for external power supplies (adapters) and not for internal power supplies it is used as a reference for comparison.

Table 3. Efficiency results

Condition CoC Efficiency average

requirement (%)

Average 25% load

50% load

75% load

100% load

115 V, 60 Hz >89 88.8 84.3 88.8 90.6 91.4

230 V, 50 Hz >89 89.8 84.9 89.8 91.7 92.7



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Fig 5. Efficiency at input voltage 115Vrms and 230Vrms

3.3 No load and low load power consumption Power consumption performance of the total application board at low load was measured with a Yokogawa WT210 digital power meter. The integration time function was used to measure the power consumption over a long time.

Measurements were performed for 100 V; 60 Hz, 230 V; 50 Hz.

Table 4. Input power consumption: no load Condition No load power

consumption (mW)

100 V; 60 Hz 60

230 V; 50 Hz 90

Table 5. Input power consumption: 250mW load (EuPlot6 standby) Condition 250mW load power

consumption (mW)

115 V; 60 Hz 400

230 V; 50 Hz 430

Requirement: < 500mW



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Table 6. Input power consumption: 125mW load (EuPlot6 standby) Condition 125mW load power

consumption (mW)

115 V; 60 Hz 230

230 V; 50 Hz 260

Requirement: < 250mW

3.4 Startup time and output voltage rise

Fig 6. Startup time at nominal output load

Fig 7. Startup time at no output load



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Table 7. Startup time

Condition Startup time (ms)

115 V; 60 Hz 367

230 V; 50 Hz 289

Requirement < 500ms

3.5 Operation mode transitions The mode transitions is related to the total power in the converter. It is a combination of the power to VOUT1 and VOUT2.

Table 8. Mode transitions Transition Power level (W) VOUT1 VOUT2

HP-LP 45 13V x 1.5A 90V x 200mA

LP-BM 25.5 13V x 1.57A 90V x 0mA

BM-LP 25.5 13V x 1.57A 90V x 0mA

LP-HP 47 13V x 1.7A 90V x 200mA



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3.6 Output voltage ripple 3.6.1 VOUT1

Fig 8. Maximum VOUT1 voltage ripple in BM at 50% duty cycle

Maximum VOUT1 voltage ripple: 240 mVpp

3.6.2 VOUT2

Fig 9. Maximum VOUT2 voltage ripple at nominal output power

Maximum VOUT2 voltage ripple:

Mains related part: 100 mVpp

Conversion related part: 150 mVpp

Total maximum voltage ripple = 100 + 150 = 250 mVpp



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3.7 Overpower protection level (OPP) and peak power

Fig 10. Over Power Protection at 159W longer than 50ms. Peak power > 220W

Over Power Protection (duration > 50ms) at 159W (13V x 7.4A + 90V x 0.7A)

Peak power (duration < 50ms) > 220W (13V x 13A + 90V x 0.7A)

3.8 Dynamic load The output voltage was measured at the end of the board.

Table 9. Minimum and maximum output voltage at min-max load steps Condition Load Output voltage min-max (V)

Standby IOUT1: 0A – 5A 12.95 – 13.54

Operation IOUT1: 1A – 5A 13.93 – 13.47

Fig 11. Output voltage during dynamic load VOUT1



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Fig 12. Output voltage during dynamic load VOUT1

3.9 Hold-up time Definition of the hold-up time is defined as the time between the following moments:

1. After mains switch off; the moment that the lowest bulk cap voltage during a mains cycle is crossed.

2. The moment that the output voltage starts to drop.

The hold-up time is measured for 115 V; 60 Hz under full load (13V x 5A + 90V x 0.7A) condition. Output voltage duration was measured directly at the output connector.

Table 10. Hold-up time Condition Hold-up time (ms)

115V; 60Hz 51

Requirement > 10ms

Remark: A smaller value of the Vboost capacitor (C115) can be used for sufficient performance. For example 82 PF.



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Fig 13. Hold-up time at Vmains = 115Vac and nominal output load

3.10 EMC The conducted EMI of the DB1440 board was measured under the following conditions: • Vout1=13V Vout2=90V Iout1=5A Iout2=0.7A • V_LINE = 115V/60Hz The conducted EMI was measured both in the Line as well as in the Neutral. Product complies with the EMC standard.



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Fig 14. Measured in the “Line” at Vline = 115Vrms

Fig 15. Measured in the “Neutral” at Vline = 115Vrms

NXP Semiconductors

150 kHz 30 MHz

1 PKCLRWR

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Date: 4.MAR.2016 15:13:05

NXP Semiconductors

150 kHz 30 MHz

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2 AVCLRWR

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4. Circuit diagram

Fig 16. Circuit diagram TEA8818 130W 13V and 90V power supply PFC part

NXP Sem

iconductors U

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prototype dem

oboard

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XP B

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Fig 17. C

ircuit diagram TEA

8818 130W 13V and 90V pow

er supply HB

C part

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iconductors U

Mxxxxx

prototype dem

oboard

UM

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© N

XP B

.V. 2015. All rights reserved.

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Fig 18. C

ircuit diagram TEA

8818 130W 13V and 90V pow

er supply SR part



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5. PCB layout

Fig 19. PCB Layout TEA8818DB1440



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6. Bill of Materials (BOM)

Table 11. Bill of materials TEA8818 + TEA1995 130W Power supply prototype Position Description Mounted BD101 Bridge Rect.; 600 V; 8 A C103 Capacitor; 1 uF; 10 %; 450 V; PET; THT NM C104 Capacitor; 470 nF; 10 %; 450 V; PET; THT C105 Capacitor; 470 nF; 10 %; 450 V; PET; THT NM C106 Capacitor; 1 uF; 10 %; 450 V; PET; THT C107 Capacitor; 47 pF; 5 %; 1 kV; C0G; 1206 C108 Capacitor; 100 pF; 10 %; 50 V; X7R; 0603 C109 Capacitor; 150 nF; 10 %; 50 V; X7R; 0603 C110 Capacitor; 470 nF; 10 %; 50 V; X7R; 0805 C113 Capacitor; 100 nF; 10 %; 50 V; X7R; 0603 C114 Capacitor; 4.7 nF; 10 %; 50 V; X7R; 0603 C115 Capacitor; 47 nF; 10 %; 630 V; X7R; 1210 NM C116 Capacitor; 82 uF; 20 %; 450 V; ALU; THT C117 Capacitor; 82 uF; 20 %; 450 V; ALU; THT C201 Capacitor; 330 pF; 5 %; 1 kV; C0G; 1206 C202 Capacitor; 330 pF; 5 %; 1 kV; C0G; 1206 C203 Capacitor; 47 pF; 10 %; 50 V; X7R; 0805 C204 Capacitor; 470 nF; 10 %; 50 V; X7R; 0805 C206 Capacitor; 47 µF; 20 %; 35 V; ALU; THT C207 Capacitor; 2.7 nF; 5 %; 50 V; COG; 0603 C208 Capacitor; 33 pF; 5 %; 1 kV; C0G; 1206 C209 Capacitor; 1 nF; 5 %; 1 kV; C0G; 1812 C210 Capacitor; 2.2 nF; 10 %; 50 V; X7R; 0603 C211 Capacitor; 47 nF; 20 %; 1 kV; MKP C212 Capacitor; 33 nF; 10 %; 50 V; X7R; 0603 C213 Capacitor; 330 nF; 10 %; 50 V; X7R; 0805 C214 Capacitor; 1 µF; 10 %; 50 V; X7R; 0805 C215 Capacitor; 10 µF; 20 %; 63 V; ALU; THT C216 Capacitor; 10 nF; 10 %; 500 V; X7R; 1812 C218 Capacitor; 680 pF; 10 %; 50 V; X7R; 0603 C219 Capacitor; 1.2 nF; 5 %; 50 V; COG; 0603 C220 Capacitor; 47 nF; 5 %; 1 kV; MKP NM C221 Capacitor; 10 nF; 10 %; 50 V; X7R; 1206 C222 Capacitor; 120 pF; 5 %; 50 V; C0G; 0603 NM C301 Capacitor; 1.5 nF; 10 %; 50 V; X7R; 0603 C302 Capacitor; 47 nF; 10 %; 50 V; X7R; 0603 C303 Capacitor; 470 µF; 20 %; 16 V; ALU; THT C304 Capacitor; 470 µF; 20 %; 16 V; ALU; THT C306 Capacitor; 470 µF; 20 %; 16 V; ALU; THT C307 Capacitor; 470 µF; 20 %; 16 V; ALU; THT C308 Capacitor; 100 µF; 20 %; 160 V; ALU; THT C309 Capacitor; 100 µF; 20 %; 160 V; ALU; THT



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C311 Capacitor; 100 µF; 20 %; 160 V; ALU; THT C312 Capacitor; 100 nF; 10 %; 50 V; X7R; 0603 C319 Capacitor; 100 nF; 10 %; 50 V; X7R; 0603 NM C320 Capacitor; 100 nF; 10 %; 200 V; X7R; 1206 NM CN301 Header; Straight; 1x6-way; 2.54mm CN302 Header; Straight; 1x5-way; 2.54mm CX101 Capacitor; 470 nF; 20 %; 310 VAC; MKP; THT CX102 Capacitor; 470 nF; 20 %; 310 VAC; MKP; THT CY101 Capacitor; 2.2 nF; 20 %; 310 VAC; MKP; THT CY102 Capacitor; 2.2 nF; 20 %; 310 VAC; MKP; THT CY201 Capacitor; 2.2 nF; 20 %; 250 V; CER; THT D101 Diode; 1kV; 3A D102 Diode; 600 V; 3 A D105 Diode; 100 V; 250 mA D201 Diode; 100 V; 250 mA D202 Diode; 100 V; 250 mA D203 Diode; 100 V; 250 mA D204 Diode; 140 V; 1 A D205 Diode; 140 V; 1 A D206 Diode; 600 V; 1 A D207 Diode; 100 V; 250 mA NM D208 Diode; 100 V; 250 mA NM D301 Diode; 280 V; 5 A; D302 Diode; 280 V; 5 A; D303 Diode; Schottky; Dual; 100 V; 10 A NM D306 Diode; 280 V; 5 A; D307 Diode; 280 V; 5 A; D308 Diode; Schottky; Dual; 100 V; 10 A NM D309 Diode; 100 V; 250 mA D310 Diode; Zener; 3.3 V; 300 mA E101 Wire Hole; AWG15 E102 Wire Hole; AWG15 E103 Wire Hole; AWG15 E104 Wire Hole; AWG18 E301 Wire Hole; AWG18 F101 Fuse; 300 VAC; 4 A; Slow Blow GDT1 Gas Discharge Tube; 200 V; THT NM GDT2 Gas Discharge Tube; 200 V; SMT NM GDT3 Gas Discharge Tube; 200 V; THT NM GDT4 Gas Discharge Tube; 200 V; SMT GDT5 Gas Discharge Tube; 200 V; THT NM GDT6 Gas Discharge Tube; 200 V; SMT HS101 Heatsink; Primary HS102 Heatsink; TO220; 24 °C/W HS301 Heatsink NM L103 Inductor; 100 uH; 5 A L104 Inductor; QP-2916 L301 Inductor; 900 nH NM L302 Inductor; 900 nH NM



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LF102 Inductor; Common Mode; 6.1 mH; 3.3 A MH1 Mounting Hole; Plated; 3.5 MM MH2 Mounting Hole; Plated; 3.5 MM Q101 MOSFET-N; 560 V; 11.6 A Q201 MOSFET-N; 550 V; 0.28 O; 13 A Q202 MOSFET-N; 550 V; 0.28 O; 13 A Q204 MOSFET-N; D2PAK NM Q205 MOSFET-N; D2PAK NM Q301 MOSFET-N; 40 V; 100A Q302 MOSFET-N; 40 V; 100 A R101 Resistor; 10 MOhm; 1 %; 250 mW; 1206 R102 Resistor; 10 MOhm; 1 %; 250 mW; 1206 R103 Resistor; 4.7 Ohm; 1 %; 63 mW; 0603 R104 Resistor; 20 Ohm; 1 %; 63 mW; 0603 R106 Resistor; 1 kOhm; 1 %; 63 mW; 0603 R107 Resistor; 0.05 Ohm; 1 %; 1 W; 2512 R108 Resistor; 0.2 Ohm; 1 %; 1 W; 2512 R110 Resistor; 5.1 kOhm; 1 %; 63 mW; 0603 R111 Resistor; 3.6 kOhm; 1 %; 63 mW; 0603 NM R112 Resistor; 33 kOhm; 1 %; 100 mW; 0603 R114 Resistor; 750 kOhm; 1 %; 250 mW; 1206 R115 Resistor; 7.5 MOhm; 1 %; 250 mW; 1206 R116 Resistor; 7.5 MOhm; 1 %; 250 mW; 1206 R118 Resistor; 100 kOhm; 1 %; 63 mW; 0603 R121 Resistor; 360 kOhm; 1 %; 63 mW; 0603 NM R192 Resistor; 510 kO; 1 %; 250 mW; 1206 R193 Resistor; 510 kO; 1 %; 250 mW; 1206 R194 Resistor; 510 kO; 1 %; 250 mW; 1206 R195 Resistor; 510 kO; 1 %; 250 mW; 1206 R196 Resistor; 0 Ohm; jumper; 250 mW; 1206 R197 Resistor; 0 Ohm; jumper; 250 mW; 1206 R198 Resistor; 0 Ohm; jumper; 250 mW; 1206 R199 Resistor; 0 Ohm; jumper; 250 mW; 1206 R201 Resistor; 22 Ohm; 1 %; 63 mW; 0603 R202 Resistor; 10 Ohm; 1 %; 63 mW; 0603 R203 Resistor; 22 Ohm; 1 %; 63 mW; 0603 R204 Resistor; 10 Ohm; 1 %; 63 mW; 0603 R205 Resistor; 180 kOhm; 1 %; 63 mW; 0603 R206 Resistor; 56 kOhm; 1 %; 63 mW; 0603 R207 Resistor; 10 kOhm; 1 %; 63 mW; 0603 R208 Resistor; 2.2 MOhm; 1 %; 250 mW; 1206 R209 Resistor; 2.7 MOhm; 1 %; 250 mW; 1206 R210 Resistor; 10 Ohm; 1 %; 63 mW; 0603 R211 Resistor; 6.8 kOhm; 1 %; 63 mW; 0603 R212 Resistor; 82 kOhm; 1 %; 63 mW; 0603 R213 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206 R214 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206 R215 Resistor; 47 kOhm; 1 %; 63 mW; 0603 R229 Resistor; 0 Ohm; jumper; 63 mW; 0603



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R231 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206 R232 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206 R233 Resistor; 180 kO; 5 %; 63 mW; 0603 R234 Resistor; 0 O; Jumper; 63 mW; 0603 R296 Resistor; 0 Ohm; jumper; 250 mW; 1206 R297 Resistor; 0 Ohm; jumper; 250 mW; 1206 R298 Resistor; 0 Ohm; jumper; 250 mW; 1206 R299 Resistor; 0 Ohm; jumper; 250 mW; 1206 R301 Resistor; 3.3 kO; 1 %; 63 mW; 0603 R302 Resistor; 2.7 kO; 1 %; 250 mW; 1206 R304 Resistor; 20 O; 1 %; 63 mW; 0603 R305 Resistor; 47 kO; 1 %; 100 mW; 0603 R306 Resistor; 9.1 kO; 1 %; 63 mW; 0603 R307 Resistor; 51 Ohm; 1 %; 63 mW; 0603 R308 Resistor; 39 kOhm; 1 %; 63 mW; 0603 R309 Resistor; 39 kOhm; 1 %; 63 mW; 0603 R310 Resistor; 0 O; jumper; 63 mW; 0603 R311 Resistor; 0 O; jumper; 63 mW; 0603 R312 Resistor; 0 O; jumper; 63 mW; 0603 R313 Resistor; 0 O; jumper; 63 mW; 0603 R314 Resistor; 0 O; Jumper; 250 mW; 1206 R315 Resistor; 0 O; Jumper; 250 mW; 1206 SG1 Spark gap; 6.0 mm T201 Transformer; ETD34 U101 PFC controller; TEA88182 U201 LLC controller; TEA88181T U202 Optocoupler; NPN; 80 V; 60 mA U301 Regulator; AS431 U302 Sync. Rec. Cntrl.; Dual; TEA1995T WB101 Wirebridge; 0.8mm; P=15.24mm WB102 Wirebridge; 0.8mm; P=5.08mm WB103 Wirebridge; 0.8mm; P=15.24mm WB201 Wirebridge; 0.8mm; P=20.32mm WB202 Wirebridge; 0.8mm; P=7.62mm WB203 Wirebridge; 0.8mm; P=7.62mm WB205 Wirebridge; 0.8mm; P=25.40mm WB206 Wirebridge; 0.8mm; P=12.10mm WB208 Wirebridge; 0.8mm; P=7.62mm WB209 Wirebridge; 0.8mm; P=15.24mm NM WB301 Wirebridge; 0.8mm; P=12.10mm WB302 Wirebridge; 0.8mm; P=15.24mm WB303 Wirebridge; 0.8mm; P=12.10mm WB304 Wirebridge; 0.8mm; P=12.10mm WB305 Wirebridge; 0.8mm; P=10.16mm WB306 Wirebridge; 0.8mm; P=12.10mm



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7. Transformer data

7.1 PFC coil data

Fig 20. PFC coil data QP2914

7.2 HBC transformer data

Fig 21. HBC Transformer data



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8. Abbreviations

Table 12. Abbreviations Acronym Description BCM Boundary conduction Mode BM Burst mode operation HP High power mode LP Low power mode MOSFET Metal-Oxide Semiconductor Field-Effect Transistor OPP OverPower Protection OVP OverVoltage Protection PCB Printed-Circuit Board QR Quasi Resonant RMS Root Mean Square SR Synchronous Rectification

9. References [1] TEA88181T — draft data sheet HBC controller– [2] TEA88182T — draft data sheet PFC controller – [3] ANxxxxx — draft application note TEA88181T and TEA88182T [4] TEA1995T — data sheet - GreenChip synchronous rectifier controller http://www.nxp.com/documents/data_sheet/TEA1995T.pdf

http://www.nxp.com/documents/data_sheet/TEA1995T.pdf

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10. Legal information

10.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

10.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a

particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer.

In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages.

Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose.

Safety of high-voltage evaluation products —The non-insulated high voltages that are present when operating this product, constitute a risk of electric shock, personal injury, death and/or ignition of fire. This product is intended for evaluation purposes only. It shall be operated in a designated test area by personnel that is qualified according to local requirements and labor laws to work with non-insulated mains voltages and high-voltage circuits.

The product does not comply with IEC 60950 based national or regional safety standards. NXP Semiconductors does not accept any liability for damages incurred due to inappropriate use of this product or related to non-insulated high voltages. Any use of this product is at customer’s own risk and liability. The customer shall fully indemnify and hold harmless NXP Semiconductors from any liability, damages and claims resulting from the use of the product.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

10.3 Licenses Purchase of NXP <xxx> components

<License statement text>

10.4 Patents Notice is herewith given that the subject device uses one or more of the following patents and that each of these patents may have corresponding patents in other jurisdictions.

<Patent ID> — owned by <Company name>

10.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners.

<Name> — is a trademark of NXP B.V.



DRAFT Rev. 0.01 — 23 june 2016 27 of 29

11. List of figures

Fig 1. General warning ................................................ 3 Fig 2. Pin configuration of the TEA88181T (HBC) and

the TEA88182T (PFC) ...................................... 4 Fig 3. Pin configuration of the TEA1995T (SR) ........... 4 Fig 4. TEA88181T, TEA88182T and TEA1995T

prototype demo board 130W............................. 5 Fig 5. Efficiency at input voltage 115Vrms and

230Vrms............................................................ 8 Fig 6. Startup time at nominal output load .................. 9 Fig 7. Startup time at no output load ........................... 9 Fig 8. Maximum VOUT1 voltage ripple in BM at 50%

duty cycle ........................................................ 11 Fig 9. Maximum VOUT2 voltage ripple at nominal output

power .............................................................. 11 Fig 10. Over Power Protection at 159W longer than

50ms. Peak power > 220W ............................. 12 Fig 11. Output voltage during dynamic load VOUT1 ...... 12 Fig 12. Output voltage during dynamic load VOUT1 ...... 13 Fig 13. Hold-up time at Vmains = 115Vac and nominal

output load ...................................................... 14 Fig 14. Measured in the “Line” at Vline = 115Vrms ..... 15 Fig 15. Measured in the “Neutral” at Vline = 115Vrms 15 Fig 16. Circuit diagram TEA8818 130W 13V and 90V

power supply PFC part ................................... 16 Fig 17. Circuit diagram TEA8818 130W 13V and 90V

power supply HBC part ................................... 17 Fig 18. Circuit diagram TEA8818 130W 13V and 90V

power supply SR part ...................................... 18 Fig 19. PCB Layout TEA8818DB1440 ........................ 19 Fig 20. PFC coil data QP2914 .................................... 24 Fig 21. HBC Transformer data .................................... 24



DRAFT Rev. 0.01 — 23 june 2016 28 of 29

12. List of tables

Table 1. Input specification ............................................. 6 Table 2. Output specification .......................................... 6 Table 3. Efficiency results ............................................... 7 Table 4. Input power consumption: no load .................... 8 Table 5. Input power consumption: 250mW load (EuPlot6

standby) ............................................................ 8 Table 6. Input power consumption: 125mW load (EuPlot6

standby) ............................................................ 9 Table 7. Startup time ..................................................... 10 Table 8. Mode transitions .............................................. 10 Table 9. Minimum and maximum output voltage at min-

max load steps ................................................ 12 Table 10. Hold-up time .................................................... 13 Table 11. Bill of materials ................................................ 20 Table 12. Abbreviations .................................................. 25


Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'.

© NXP B.V. 2015. All rights reserved.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 30 September 2015 Document identifier: UMxxxxx

13. Contents

1. Introduction ......................................................... 3 1.1 Scope of this document ...................................... 3 1.2 TEA88181T and TEA88182T ............................. 3 1.3 TEA1995T .......................................................... 4 1.4 Setup of the 130W 13V/90V power supply ......... 5 2. Power supply specification ................................ 6 3. Measurements ..................................................... 7 3.1 Test facilities ...................................................... 7 3.2 Efficiency ............................................................ 7 3.3 No load and low load power consumption .......... 8 3.4 Startup time and output voltage rise ................... 9 3.5 Operation mode transitions .............................. 10 3.6 Output voltage ripple ........................................ 11 3.6.1 VOUT1 ................................................................ 11 3.6.2 VOUT2 ................................................................ 11 3.7 Overpower protection level (OPP) and peak

power ............................................................... 12 3.8 Dynamic load ................................................... 12 3.9 Hold-up time ..................................................... 13 3.10 EMC ................................................................. 14 4. Circuit diagram .................................................. 16 5. PCB layout ......................................................... 19 6. Bill of Materials (BOM) ...................................... 20 7. Transformer data ............................................... 24 7.1 PFC coil data .................................................... 24 7.2 HBC transformer data ...................................... 24 8. Abbreviations .................................................... 25 9. References ......................................................... 25 10. Legal information .............................................. 26 10.1 Definitions ........................................................ 26 10.2 Disclaimers....................................................... 26 10.3 Licenses ........................................................... 26 10.4 Patents ............................................................. 26 10.5 Trademarks ...................................................... 26 11. List of figures ..................................................... 27

12. List of tables ...................................................... 28 13. Contents ............................................................. 29

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