update on active radmon sensors
DESCRIPTION
Update on Active RADMON sensors. Federico Ravotti (TS-LEA-CMS) Maurice Glaser & Michael Moll (PH-TA1-SD). Active Radiation Monitors. + new devices (D2) 0.4 m m oxide thickness; Isochronal Characterization of all FET types under way!. RadFETs. - PowerPoint PPT PresentationTRANSCRIPT
Update on Active RADMON sensors
Federico Ravotti (TS-LEA-CMS)
Maurice Glaser & Michael Moll
(PH-TA1-SD)
M. Glaser RADMON Meeting 22-07-2004 2
Active Radiation Monitors
RadFETs
p-i-n diodes
Optically Stimulated
Luminescence (OSL)
• + new devices (D2) 0.4 m oxide thickness;
• Isochronal Characterization of all FET types
under way!
• Investigation on thick devices for
high sensitivity measurements
under way!
• Annealing studies under way!
• Radiation Hardness problems with
the Readout electronics under
investigation!
M. Glaser RADMON Meeting 22-07-2004 3
RadFETs
M. Glaser RADMON Meeting 22-07-2004 4
OSL on-line sensor
OSLs deposed on GaAsP
photodiodes for CERN sensor OSL
pure
OSL+B
OSL+
Paraffin
GaAsP + OSL coupled with a NIR LED
NIR LED known Radiation Hardness problems:
Diodes InGaAsP/InP 1050 nm under investigation!
GaAsP photo-sensor unexpected Radiation Hardness problems:
(~ 30 % signal loss after ~ 2x1013 eq)
• Problem under investigation;
• Research of new solutions.
M. Glaser RADMON Meeting 22-07-2004 5
Passive Radiation Monitors Polymer-Alanine (PAD)
Radio-Photo Luminescent (RPL)GafchromicSensitive Films
Calibration campaign 2003 in the mixed /n field of CERN-PS IRRAD2 Facility
(@ 50 cm from the beam axis)
24 GeV/c protons
(HD-810)
M. Glaser RADMON Meeting 22-07-2004 6
Readout parameters
Active Dosimeter
External bias Readout InputPre-irradiation
outputAfter irradiation
output
Reference Val.
RadFETs not neededDC i = 10 A ÷ 160 A
depending on MTC1 V to 3 V
depending on tox
~ 10 V (1.6 m) ~ 4 V (0.25 m)
100 Gy
~ 41 V (0.25 m) 100k Gy
OSLs (2003
sensor)
± 5V (on-board electronics)
10-15 sec DC stimulation on LED with i = 50 mA
noise ~ 200 V with Gout=10
~ 2 V with Gout=10 100 Gy
BPW34F (w ~ 300 m)
not neededFast pulse (180 ms) with
Forward i = 1 mA0.5 V
~ 50 V (linear operation)
4.x1014 cm-2 (eq)
Pad structures
not neededLeakage current at full depletion V = 100 V ?
~ nA order ~ mA order1014÷ 1015 cm-2
(eq)
PT100 Temp Probe
not needed DC i = 1 mA 0.1 V (0 ºC) #