university of arizona’s innovative planarization laboratory meetings... · 2007. 6. 12. ·...
TRANSCRIPT
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1
University of Arizona’s Innovative Planarization Laboratory
Prof. Ara Philipossian ([email protected])
Department of Chemical and Environmental Engineering
University of Arizona
Tucson, AZ 85721 USA
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Mission Statement
Collaborate with world-class equipment suppliers,consumables suppliers, IC makers and
research centersto provide
novel planarization solutionsthrough advancement of
fundamental knowledge & educational methods
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• Lubrication and wear … Coefficient of friction analysis and force spectroscopy• Fluid dynamics … Dual Emission UV-Induced Fluorescence imaging, residence time
analysis & vessel dispersion analysis• Fundamental pad, slurry and conditioner characterization & design• Thermal modeling• Post-planarization cleaning• Planarization & post-planarization cleaning equipment design
Research Thrusts & Sponsors
2001 2002 2003 2004
Degussa
Hitachi Chemical
JSR
Sandia National Labs
Fujimi
Isamu Koshiyama
Fujikoshi
Asahi Sunac
Showa Denko
NeopadCourtesy of Tufts University
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Research Partners
• Intel Corporation … Research Partner• STMicroelectronics … Research Partner• Hitachi Limited … Research Partner
• Atofina … Research Partner• Pall Corporation … Research Partner
• Intelligent Planar Research Partner
• Tufts University … Research Partner• Saitama University … Research Partner
• Rodel … Pad supply• Cabot Microelectronics Slurry Supply• Freudenberg … Pad supply
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Research Staff
• Visiting Professor … Toshiro Doi (6/03 to 6/05)
• Post-Doc … Yun Zhuang (7/03 to 7/06)
• Visiting Researcher … Daizo Ichikawa (9/03 to 12/05) … FujikoshiHiroshi Takahashi (2/04 to 12/04) … SDKYoshiyuki Seike (1/04 to 6/04) … Asahi Sunac
• Ph.D. Candidate … Jam SorooshianZhonglin LiDaniel Rosales-YeomansDarren DeNardisYasa SampurnoHyosang Lee
• B.S. Candidate … Masano SugiyamaDeanna King Juan Weaver
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Equipment & Capabilities• Planarization Equipment
– 2 Speedfam-IPEC 372M polishers (200 mm)• RR & RRNU, defect density, SHR, dishing &
erosion• Temperature map (on the pad and under the
wafer)• Mean residence time and fluid dispersion• Wafer-pad fluid film thickness
• Post-Planarization Cleaning Equipment
– 1 LAM DSS-200 PVA brush scrubber (200 mm)– 1 Verteq spin-rinse dryer (up to 200 mm)– 1 Manual wet bench (up to 200 mm)
• High Pressure Micro Jet Pad Conditioner (Asahi Sunac)
• Slurry Regeneration & Recycling System (Pall)
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High Pressure Micro Jet (HPMJ) Conditioner
Fan Angle
Diamond Conditioning HPMJ Conditioning
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0.1
1
0.E+00 1.E-02 2.E-02 3.E-02
Sommerfeld Number
COF
HPMJ Conditioning … COF & RR Results
0
5
10
15
20
0 0.1 0.2 0.3
Average COF
K-P
r x 1
E14
(1/P
a)
0.0
0.1
0.2
0.3
0.4
Diamond HPMJ
CO
F
0.31 m/s 0.62 m/s 0.93 m/s
0.0
5.0
10.0
15.0
20.0
25.0
Diamond HPMJ
K-P
r x
1E14
(1/P
a)
0.31 m/s 0.62 m/s 0.93 m/s
Diamond
HPMJ
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Slurry Regeneration and Recycling System
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Platen
Slurry Capture Tub
Spent Slurry Reservoir
Pump & Filter
Slurry Spike
Chemical Spike
inactive
ILD Slurry Regeneration & Recycling
• Pad = Rodel IC-1000 ‘perforated’
• Conditioning– 100 grit diamond disk– 30 minutes with UPW
at 20 rpm and 30 per minute sweep frequency
• Slurry = Fujimi PL-4217 at 60 cc per min (12.5 weight percent)
• Wafer Type = 100-mm thermally grown SiO2
• Wafer Speed = 0.62 m/s
• Wafer Pressure = 6 PSI
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100
1000
10000
100000
1000000
Fres
h
Byp
asse
d
Rec
ycle
= 1
Rec
ycle
= 3
Rec
ycle
= 5
Larg
e P
artic
le C
ount
s of
Effl
uent
Slu
rryUnfiltered
Filtered
0
1
2
3
Fres
h
Byp
asse
d
Rec
ycle
= 1
Rec
ycle
= 3
Rec
ycle
= 5
Met
al C
onte
nt (p
pm)
Unfiltered
Filtered
135
139
143
147
151
Fres
h
Bypa
ssed
Rec
ycle
= 1
Rec
ycle
= 3
Rec
ycle
= 5
Mea
n Ag
greg
ate
Size
(nm
)
Unfiltered
Filtered
ILD Slurry Regeneration & Recycling
Si
O
O
OH
OH
OH
HO
HO
HO
Si
Si
Si
O
O
AlHO OH
OHHO
Si
Si
Dehydration
Silica Abrasive
Silica Abrasive
Si
Si Si
Si
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800
1000
1200
1400
1600
1800
Fres
h
Byp
asse
d
Rec
ycle
= 1
Rec
ycle
= 3
Rec
ycle
= 5
ILD
Rem
oval
Rat
e (A
ngst
rom
s pe
r min
ute)
Unf iltered
Filtered
0.10
0.15
0.20
0.25
Fres
h
Byp
asse
d
Rec
ycle
= 1
Rec
ycle
= 3
Rec
ycle
= 5
CO
F
Unfiltered
Filtered
ILD Slurry Regeneration & Recycling
900
1100
1300
1500
1700
135.0 140.0 145.0 150.0 155.0
Mean Aggregate Size (nm)IL
D R
R (A
/min
)
900
1100
1300
1500
1700
0.13 0.15 0.17 0.19 0.21 0.23
COF
ILD
RR
(A/m
in)
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Analyzing Raw Frictional Data
40
• Typical Polish Run:– 75 seconds– 1000 frictional force measurements per
second– 75,000 data points per run
)()( tfFtF shearshear +=
γ = Interfacial Interaction Index γ = Area under the curveγ = Total amount of mechanical
energy caused by stick-slipγ = 7.51
Normal
Shearavg F
FCOF =
wafer, platen & conditioner kinematics
(0.5 to 2.4 Hz)
unique to k-groove pads related to distribution of collision events
between grooves & leading wafer edge (20 to 500 Hz) Tool vibration and
resonance
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Fumed Silica Slurries
Primary Particle Size ~ 30 nmMean Aggregate Size ~ 110 nm
‘High’ degree of structure
Source: Degussa
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Recycling & Filtration vs. Frictional ‘Fingerprint’
ReferenceFresh Slurry
Recycle = 1UNFILTERED
Recycle = 1FILTERED
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Recycle = 3UNFILTERED
Recycle = 3FILTERED
ReferenceFresh Slurry
Recycling & Filtration vs. Frictional ‘Fingerprint’
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Recycle = 5UNFILTERED
Recycle = 5FILTERED
ReferenceFresh Slurry
Recycling & Filtration vs. Frictional ‘Fingerprint’
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Gamma vs. Removal Rate
750
1000
1250
1500
1750
2000
2250
0.00 0.50 1.00 1.50 2.00 2.50
Gamma
ILD
RR
(A/m
in)
Fresh
1 Recycle - Filtered
3 Recycle - Filtered
5 Recycle - Filtered
1 Recycle - Unfiltered
3 Recycle - Unfiltered
5 Recycle - Unfiltered
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Equipment & Capabilities• Planarization & Post-Planarization Cleaning Equipment (continued)
– 3 Copy EXACTLY! custom-made polishers & tribometers (100 mm)• 1:2 scale of Speedfam-IPEC 472• COF, fluid film thickness analysis, RR & RRNU• Temperature map (on the pad and under the wafer)• Mean residence time and fluid dispersion• Pressure map
– 1 polisher & tribometer (200 mm)• Fujikoshi 200-mm polisher customized for copper & low-k applications (down to 0.2 PSI)• COF, fluid film thickness analysis, RR & RRNU• Thermal and pressure imaging• Mean residence time and fluid dispersion
– 1 Controlled-Atmosphere polisher (100 mm)• Fujikoshi 2nd prototype for polishing under controlled gaseous ambient as well as vacuum• RR, RRNU, defect density, SHR, dishing & erosion• Thermal imaging
– 1 custom-made PVA brush scrubber and tribometer (up to 200 mm)
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200-mm Polisher & Tribometer for Cu & ULK
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200-mm Polisher & Tribometer for Cu & ULK
24
25
26
27
28
29
30
31
32
0 15 30 45 60
Polish Time (sec)
Tempe
ratu
re (d
eg C
)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Sommerfeld Number
CO
F
IC-1000 XY-Groove
IC-1000 K-Groove
IC-1000 Flat
Wafer Temperature (C)
P x
V (K
pa-m
/s)
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Experimental Conditions
• Constants:
– Conditioning• 100 grit diamond disc• 30 min with UPW at 30 rpm
disk speed and 20 per min sweep frequency
– Slurry• Fujimi PL-4217 at 12.5 weight
percent• 220 cc per minute
– Wafers• 200-mm in diameter• 7000 Angstrom thermal SiO2
on silicon
• Variables:
– Platen & wafer angular velocity (m/s)
• 0.31• 0.62• 0.93
– Wafer pressure (PSI)• 2 • 3 • 4
– Pad type• Rodel IC-10-A2
– Pad surface texture• K-groove
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Lubrication Mechanism
0.01
0.10
1.00
1.0E-03 1.0E-02 1.0E-01
Sommerfeld Number
Ave
rage
CO
F
0.0E+00
5.0E-10
1.0E-09
1.5E-09
2.0E-09
2.5E-09
3.0E-09
3.5E-09
4.0E-09
4.5E-09
0.0E+00 5.0E+03 1.0E+04 1.5E+04 2.0E+04 2.5E+04 3.0E+04 3.5E+04
P x V (Pa-m/sec)
RR
(m/s
)200-mm Y-direction
200-mm X-direction
IC-1000 (100-mmIC-1400 (100-mm)
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Spectral Analysis
• X direction
• Y direction
Gamma = 49.23
Gamma = 28.35
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Controlled Atmosphere Polisher (CAP)
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Post-CMP Cleaning Apparatus
0.25 PSI
0.35 PSI
0.45 PSI
0.58 PSI 0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
Mixed-to-Hydrodynamic Mainly Hydrodynamic Hydrodynamic
pH ~ 1.1 pH ~ 7.0 pH ~ 10.7
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Equipment & Capabilities• Metrology Equipment
– Film thickness, dishing and erosion:• Insulators … Rudolph and Gaertner Ellipsometers (up to 200 mm)• Metals … Veeco resistivity mapping system (up to 200 mm)• Veeco stylus profilometer and KLA-Tencor P2 profiler (up to 200 mm)
– Defect density:• KLA-Tencor 7600 (patterned wafers) and KLA-Tencor 5500 (blanket wafers) defect
detection systems (up to 200 mm)
– Thermal and pressure mapping:• FLIR infrared camera (on loan from MIT)• Photometrics CCD cameras (also perform fluid film thickness measurements)• Tekscan pressure sensor (up to 200 mm)
– Pad and PVA brush mechanical characterization:• TA Instruments Thermo-Mechanical Analyzer, Dynamic Mechanical Analyzer and
Dynamic Scanning Calorimeter• Pad Flattening Ratio (PFR) analyzer
– Slurry characterization:• TA Instruments rheometer (up to 50,000 1/sec)
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Pad Characterization
Normal
Shearavg F
FCOF =
ShearNormalavg FFCOF =×
PFNormal ∝
Shearavg FPCOF ∝×
Low-k
Cu
Low-k
~ 3.5 PSI ~ 0.7 PSI ~ 0.1 PSI
ULK Delamination during Copper CMP
The photograph below and the SEM micrograph are courtesy of Hitachi Chemical
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Novel Pad Groove Designs
Flat padLogarithmic Spiral NegativeLemniscate Logarithmic Spiral Positive
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Novel Pad Groove Designs
0.0
0.1
0.2
0.3
0.4
0.5
Log Spiral Neg Log Spiral Pos Flat Lemniscate
Ave
rage
CO
F
0.10
1.00
1.00E-03 1.00E-02 1.00E-01
Sommerfeld Number
Ave
rage
CO
F
Logarithimic-Spiral-Negative
Logarithimic-Spiral-Positive
Flat
Lemniscate
0.001
0.01
0.1
1
1.0E
-03
1.0E
-02
1.0E
-01
1.0E
+00
Sommerfeld Number (unitless)
Coe
ffici
ent o
f Fric
tion
(uni
tless
)
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Analyzing Raw Frictional Data• Typical Polish Run:
– 75 seconds– 1000 frictional force
measurements per second– 75,000 data points per run
)()( tfFtF shearshear +=
γ = Interfacial Interaction Index γ = Area under the curveγ = Total amount of mechanical
energy caused by stick-slipγ = 7.51
Normal
Shearavg F
FCOF =
wafer, platen & conditioner kinematics
(0.5 to 2.4 Hz)
unique to k-groove pads related to distribution of collision events
between grooves & leading wafer edge (20 to 500 Hz) Tool vibration and
resonance
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CMP and The Violin
Time
Bow
Spe
edTime
Strin
g Sp
eed
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Waveforms in Time and Frequency Domains
2 PSI & 0.93 m/s
6 PSI & 0.93 m/s
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Force Spectra
Lemniscate Gamma =
43.26
Flat Gamma = 2.09
Logarithmic Spiral Negative Gamma = 10.01
Logarithmic Spiral Positive Gamma = 5.34
Minimum Sommerfeld Number (6 PSI & 0.31 m/s)
Maximum Sommerfeld Number (2 PSI & 0.93 m/s)
Lemniscate Gamma =4.80
Flat Gamma = 1.46
Logarithmic Spiral Negative Gamma = 24.79
Logarithmic Spiral Positive Gamma = 7.88
*
*
* *
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Post-Planarization PVA Brush Scrubbing
• For PVA scrubbers with simple kinematics, Stribeck curves have been used to determine the lubrication mechanism and have helped predict brush life, however:
– Experimentally intensive– Inherent uncertainty in estimating the
constituents of the Sommerfeld number
• Fluid film thickness in the brush-wafer interface
– Nodules– Mechanical properties of the polymer
• Localized brush pressure as a function of brush deformation
– Completely misleading when complex kinematics are involved
0.25 PSI
0.35 PSI
0.45 PSI
0.58 PSI
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Goals• Determine whether spectral analysis based on raw frictional data
obtained during PVA brush scrubbing:
– Can shed light on the tribology of the process as a function of: • Brush rotational velocity and oscillation frequency• Wafer velocity• Solution pH • Brush pressure
– Can help ‘fingerprint’ the process and help in:
• New endpoint detection methods• Process, consumables and equipment diagnostics• Elucidation of fundamental physical and chemical phenomena taking place
during scrubbing
![Page 37: University of Arizona’s Innovative Planarization Laboratory Meetings... · 2007. 6. 12. · Darren DeNardis Yasa Sampurno Hyosang ... Masano Sugiyama Deanna King Juan Weaver. Equipment](https://reader033.vdocuments.us/reader033/viewer/2022051804/5fed191855658b7f977710bc/html5/thumbnails/37.jpg)
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPMP = 0.25 PSI
Stribeck Curves Corresponding to Simple Tool Kinematics (i.e. Brush Rotation Only)
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
pH = 1.1
pH = 10.7
pH = 7.0
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPMP = 0.35 PSI
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPMP = 0.55 PSI
![Page 38: University of Arizona’s Innovative Planarization Laboratory Meetings... · 2007. 6. 12. · Darren DeNardis Yasa Sampurno Hyosang ... Masano Sugiyama Deanna King Juan Weaver. Equipment](https://reader033.vdocuments.us/reader033/viewer/2022051804/5fed191855658b7f977710bc/html5/thumbnails/38.jpg)
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPM
Stribeck Curves Corresponding to Complex Tool Kinematics
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
F
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
CO
FBrush rotation = 10 to 60 RPM
Brush oscillation = 20 per minuteWafer Rotation = 0 RPM
Brush rotation = 10 to 60 RPMBrush oscillation = 20 per minute
Wafer Rotation = 40 RPM
pH = 1.1
pH = 10.7
pH = 7.0
![Page 39: University of Arizona’s Innovative Planarization Laboratory Meetings... · 2007. 6. 12. · Darren DeNardis Yasa Sampurno Hyosang ... Masano Sugiyama Deanna King Juan Weaver. Equipment](https://reader033.vdocuments.us/reader033/viewer/2022051804/5fed191855658b7f977710bc/html5/thumbnails/39.jpg)
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
Gamma Curves Corresponding to Simple Tool Kinematics
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPMP = 0.25 PSI
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPMP = 0.35 PSI
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPMP = 0.55 PSI
pH = 1.1
pH = 10.7
pH = 7.0
![Page 40: University of Arizona’s Innovative Planarization Laboratory Meetings... · 2007. 6. 12. · Darren DeNardis Yasa Sampurno Hyosang ... Masano Sugiyama Deanna King Juan Weaver. Equipment](https://reader033.vdocuments.us/reader033/viewer/2022051804/5fed191855658b7f977710bc/html5/thumbnails/40.jpg)
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
‘Gamma Criterion’ for Determining the Likely Lubrication Regime
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
Gamma > 0.001 … Boundary Lubrication
0.0001 > Gamma > 0.001 … Partial Lubrication
Gamma < 0.0001 … Hydrodynamic Lubrication
![Page 41: University of Arizona’s Innovative Planarization Laboratory Meetings... · 2007. 6. 12. · Darren DeNardis Yasa Sampurno Hyosang ... Masano Sugiyama Deanna King Juan Weaver. Equipment](https://reader033.vdocuments.us/reader033/viewer/2022051804/5fed191855658b7f977710bc/html5/thumbnails/41.jpg)
Time Domain & Frequency Domain Spectra(pH = 1.1 and Pressure 0.35 PSI)
Brush rotation = 30 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPM
Brush rotation = 30 RPMBrush oscillation = 20 per minute
Wafer Rotation = 0 RPM
Brush rotation = 30 RPMBrush oscillation = 20 per minute
Wafer Rotation = 40 RPM
![Page 42: University of Arizona’s Innovative Planarization Laboratory Meetings... · 2007. 6. 12. · Darren DeNardis Yasa Sampurno Hyosang ... Masano Sugiyama Deanna King Juan Weaver. Equipment](https://reader033.vdocuments.us/reader033/viewer/2022051804/5fed191855658b7f977710bc/html5/thumbnails/42.jpg)
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
0.00001
0.0001
0.001
0.01
0.1
1
1.00E-06 1.00E-05 1.00E-04
Sommerfeld Number
Gam
ma
Brush rotation = 10 to 60 RPMBrush oscillation = 0 per minute
Wafer Rotation = 0 RPM
Brush rotation = 10 to 60 RPMBrush oscillation = 20 per minute
Wafer Rotation = 0 RPM
Brush rotation = 10 to 60 RPMBrush oscillation = 20 per minute
Wafer Rotation = 40 RPM
pH = 1.1
pH = 10.7
pH = 7.0
Gamma Curves Corresponding to Complex Tool Kinematics