uni s unis thick-film multilayer microwave circuits for wireless applications charles free advanced...
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Thick-Film Multilayer Microwave Circuits for Wireless Applications
Charles Free
Advanced Technology Institute University of Surrey, UK
andZhengrong Tian
Formely with Middlesex University
Now with NPL
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University of Surrey
Located in Guildford 30km south of London
Approx. 5000 students
Single campus - lot of student accommodation on-site
Technological university
Research-led university
Top of UK research ratings in Electronic Engineering
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School of Electronics: Research Groups
Surrey Space Centre
Small satellites: design + construction + control
Advanced Technology Institute
Semiconductors + ion beam applications + microwave systems
Centre for Communication Systems Research
Mobile + satellite communications
Centre for Vision, Speech and Signal Processing
Medical + Multimedia + Robotics
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Advanced Technology Institute
Microwave Systems:
- MMIC design
- RF and Microwave MCMs
- Microwave circuits and antennas
- thick-film (including photoimageable) processing
- access to clean rooms (class 1000 and class 100)
- measurement capability to 220GHz
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Thick-Film Multilayer Microwave Circuits
for Wireless Applications
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CONTENTS
Introduction Thick-film technology Significance of line losses Single layer microwave circuits Multilayer microwave circuits Summary
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INTRODUCTON
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Typical frequencies for wireless applications:
Current mobile: 0.9GHz - 2GHz
3G systems: 2.5GHz
Bluetooth: 2.5GHz
GPS: 12.6GHz
LMDS: 24GHz and 40GHz
Automotive: 77GHz
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Driving forces created by the wireless market:
lower cost
higher performance
greater functionality
increased packing density
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Microstrip: basic microwave interconnection structure
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Summary of key material requirements at RF:
Conductors:- low bulk resistivity- good surface finish (low surface roughness)- high line/space resolution- good temperature stability
Dielectrics: - low loss tangent (<10-2)- good surface finish- precisely defined r (stable with frequency)- isotropic r
- consistent substrate thickness- low Tf (< 50 ppm/oC)
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RF Transceiver Architecture
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Features of an RF MCM
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THICK-FILM TECHNOLOGY
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Thick-Film Technology
Advantages:
Low Cost
Feasibility for mass production
Adequate quality at microwave frequencies
Potential for multi-layer circuit structures
Difficulty:
Fabrication of fine line and gaps: limited
quality by direct screen printing
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Standard range of materials is used:
CONDUCTORS: - gold- silver- copper
DIELECTRICS: - ceramic (alumina)- green tape (LTCC)- thick-film pastes- laminates
Plus photoimageable conductors and dielectrics23
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Fine lines < 25 micron with 1 micron precisionHigh density, 4 micron thick conductorHigh conductivity - 95% of bulk
50m lines
96% Al
Photodefined conductors
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W
S
r1
r2W
S
MICROSTRIP RESONANT RING
TEST STRUCTURE
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Microstrip Resonant Ring• can be used to measure total line loss and vp
(measure Q loss, measure fo vp )• does not separate conductor and dielectric loss• ring is loaded by input and output ports - source of measurement error
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• can be used to measure total line loss and vp
(measure Q loss, measure fo vp )• does not separate conductor and dielectric loss• ring is loaded by input and output ports - source of measurement error
Meander-line test structure
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Chamfering of the corners is a necessary precaution in microstrip to avoid reflections
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0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0 5 10 15 20 25 30 35 40 45
Frequency (GHz)
Lin
e L
oss
(d
B/m
m)
measured simulated
Comparison of measured and simulated loss in a 50 line fabricated on 99.6% alumina.
[substrate thickness = 254m and line width = 255m]
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0
0. 05
0. 1
0. 15
0. 2
0. 25
0. 3
4 8 12 16 20 24 28 32 36 40 44
Frequency (GHz)
Line
Los
s (d
B/wa
vele
ngth
)
Measured line loss: 50 thick-film microstrip line
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I
II
III
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
4 8 12 16 20 24 28 32 36 40 44
Frequency (GHz)
Lin
e L
oss (
dB
/mm
)
A
B
C
Typical microstrip line losses
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Skin effect: at RF and microwave frequencies currenttends to flow only in the surface of a conductor
Skin depth (): depth of penetration at which the magnitude of the current has decreased to 1/e of the surface value
f
1
Significance: surface of conductors must be smoothand the edges well defined to minimise losses
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0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0 10 20 30 40 50
Frequency (GHz)
Line
loss
(dB
/mm
)
RGH=0.5
RGH=0.2
RGH=0.1
RGH=0
Effect of surface roughness on the lossin a microstrip line
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00.005
0.010.015
0.020.025
0.030.035
0.040.045
0.05
0 10 20 30 40
Frequency (GHz)
Tand=0.001 Tand=0.003Tand=0.005 Tand=0.0001
Effect of loss tangent on line loss
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0%
20%
40%
60%
80%
100%
LineLoss(%)
8 20 32 44
Frequency (GHz)
Bulk Conductor Loss Loss due to Surface Roughness Dielectric Loss
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0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
LineLoss(%)
Al LTCC
Different Material (evaluated at 2GHz)
Bulk Conductor Loss Loss due to Surface Roughness Dielectric Loss
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LTCC TECHNOLOGY
• LTCC technology is a well-established technology• Reliability established in the automotive market
Advantages for high frequency applications:
• parallel processing (→ high yield, fast turnaround, reduced cost)• precisely defined parameters• high performance conductors• potential for multi-layer structures• high interconnect density
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LTCC TECHNOLOGY
Microwave applications: LTCC can meet the physical and electrical performance demanded at frequencies above 1GHz Increases in material and circuit production are reflected in lower costs: LTCC is now comparable to FR4 Significant space savings when compared to other technologies, such as FR4
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SIGNIFICANCE OF LINE LOSSES
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MICROWAVE RECEIVERMICROWAVE RECEIVER
Feeder BPF1 BPF2LNA Mixer
Schematic of front-end of a microwave receiver
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RECEIVER NOISE PERFORMANCERECEIVER NOISE PERFORMANCE
System noise temperature (Tsys)
Feeder
BPF1 BPF2
LNA Mixer
........212
2
1
1 BPFpaBPFfeeder
m
BPFpafeeder
BPF
BPFfeeder
pa
feeder
BPFfeedersys GGGG
T
GGG
T
GG
T
G
TTT
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RECEIVER NOISE PERFORMANCERECEIVER NOISE PERFORMANCE
........212
2
1
1 BPFpaBPFfeeder
m
BPFpafeeder
BPF
BPFfeeder
pa
feeder
BPFfeedersys GGGG
T
GGG
T
GG
T
G
TTT
Significance of expression for Tsys:
• noise performance dominated by first
stage
• a lossy first stage introduces noise:
Tfeeder = (L -1) 290
• a lossy first stage magnified noise from
succeeding stages: Gfeeder < 1
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Dielectric Properties @ 9GHz
Material r Tan x 10-3
99.5% AL9.98 0.1
LTCC1 7.33 3.0
LTCC2 6.27 0.4
LTCC3 7.2 0.6
LTCC4 7.44 1.2
LTCC5 6.84 1.3
LTCC6 8.89 1.4
Published material data
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CALCULATED RESULTS CALCULATED RESULTS Noise figure variationNoise figure variation
Feeder
BPF1 BPF2
LNA Mixer
0
2
4
6
8
10
12
1 2 3 4 5
tand=0.005 tand=0.001 tand=0.0001
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SINGLE-LAYER MICROWAVE CIRCUITS
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Single-layer microstrip circuits:
all conductors in a single layer
coupling between conductors achieved through
edge or end proximity (across narrow gaps)
Problem:
difficult to fabricate (cheaply in production) fine
gaps, possibly 10m
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End-coupled
filter
Directional
coupler
Examples of single-layer microstrip circuits
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DC break
Edge-coupled
filter
Examples of single-layer microstrip circuits
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MULTI-LAYER MICROWAVE CIRCUITS
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Multilayer microwave circuits:
conductors stacked on different layers
conductors separated by dielectric layers
allows for (strong) broadside coupling
eliminated need for fine gaps
registration between layers not as difficult to
achieve as narrow gaps
technique well-suited to thick-film print technology
also suitable for LTCC technology
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3 Isolated port
Direct port 4
Ground plane
H
h1
εrW1
W2
εr1
1
2 Coupled port
l
S
Main substrate
Thick-film dielectric layer
Input port
Multilayer configuration
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Thick-film technology is particularly suitable for the implementation of multilayer circuits:
higher packing density
integration of antenna
close coupling between conductors
Circuit examples:
DC block
Directional coupler
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Single Layer Structure
Multilayer ConceptDirectional Coupler
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-35
-30
-25
-20
-15
-10
-5
0
0 1 2 3 4 5 6 7 8 9 10 11
Frequency (GHz)
2dB Directional Coupler - Measured Results
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-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
3dB Directional Coupler - Measured Results
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/4
Microstrip DC block
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300um
380um
Alumina
r = 3.9180um
Multilayer DC block
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1
1.2
1.4
1.6
1.8
2
1 2 3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
VS
WR
Measured performance of multilayer DC block
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0.4
0.8
1.2
1.6
2
1 2 3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
Inse
rtio
n L
oss
(d
B)
Measured performance of multilayer DC block
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SUMMARY
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SUMMARY:
Thick-film technology provides a viable fabrication
process for wireless circuits at microwave frequencies
Multilayer microwave circuits can offer enhanced
performance for coupled-line circuits
Photoimageable thick-film materials extend the usable
frequency range to mm-wavelengths