Ultra-intense and Ultra-fast

Laser Development

Presenter: Yuxin Leng

Xiaoyan Liang, Jiansheng Liu, Ruxin Li and

Zhizhan Xu

State Key lab of high field laser physics

Shanghai Institute of Optics and Fine Mechanics, China

Outline

Introduction

High Power Femtosecond Laser

High Power Few-cycles Laser and Carrier

Envelop Phase Stability

Further development

SIOM

SIOM

The location of SIOM

Shanghai Institute of

Optics and Fine

Mechanics(SIOM),

Chinese Academy of

Sciences, Shanghai

201800, P. R. China

Established in 1964

• Basic research laboratories1) the State Key Laboratory for High Field Physics

2) the CAS Key Laboratory for Quantum Optics

3) the Laboratory for Information Optics

• Hi-tech application and innovation research laboratories 1) the Laboratory for High Power Laser Physics

2) the High Density Optical Storage Laboratory

3) the Advanced Laser Technology and Application System Laboratory

• Research and development (R&D) centers1) the High Power Laser Component Technology Center

2) the Precision Optoelectronic Measurement and Control Center

3) the Laser & Optoelectronic Material Center

4) the Optical Coating Technique Center

Brief Introduction

State Key Laboratory

of High Field Laser Physics

Physics and technology of ultra-fastultra-intense light sources

Ultra-fast high-field laser physics

Basic physics of related high-tech fields

Ultra-fast processes and basic research in interdisciplinary fields.

Main Research Fields:

High Power Femtosecond Laser

1960

Theodore Maiman

First Laser

Milestones in Development of ultra-

intense and ultra-fast laser

1917

Albert Einstein

Original Concept of Light

Amplification by Stimulated

Emission of Radiation (LASER)

http://www.rp-photonics.com

http://laserfest.org/lasers/history/timeline.cfm

http://www.crystalsystems.com/ti_sapphire_products.html

Milestones in Development of ultra-

intense and ultra-fast laser

1962

Q-switch

ns,106W/cm2

1963

Mode locking

ps/fs,1012W/cm2

1985

Mourou

Chirped Pulse

Amplification

1986

Ti:sapphire

http://www.rp-photonics.com

http://laserfest.org/lasers/history/timeline.cfm

http://www.crystalsystems.com/ti_sapphire_products.html

Chirped pulse amplification

Chirped Pulse Amplification:

Laser material: Ti:Sapphire, Nd:glass for

broadband gain.

CPA+OPA=OPCPA

(Optical parametric chirped pulse amplification)

Parametric Pulse Amplification (OPA):

Nonlinear crystal: BBO, LBO, KDP

Intensity

T. Tajima and G. Mourou, Physical Review Special Topics, Vol. 5,

031301 (2002)Proton: EQ=mpc2, intensity~1024W/cm2

1018W/cm2

2*1022 W/cm2

Local electronic field: 1012V/cm;

Local magnetic field: 109 Gauss;

High energy density: 3×1010J/cm3;

Press: 1012 atm;

Electronic quiver energy: >10MeV(>>0.5MeV, Electron rest energy) forrelativistic optics ;

Electron acceleration: 1022m/s2;

1021W/cm2 Vs Extreme conditions

SCIENCE 301, 154( 2003)

全世界激光实验室展开拍瓦级激光竞赛

PW(1015W)

2.8 TW/43fs, 10Hz,

1996 BMI

5.4 TW/46fs, 10Hz,

199816 TW/33.9fs, 10Hz,

2001

23 TW/33.9fs, 10Hz,

2002 120 TW/36fs, single

shot, 2004

890 TW/29fs, single

shot, 2006

0.1 TW/20ps,

1991

16.7 TW/120fs, OPCPA

laser, 2002

Roadmap of Ultraintense Ultrashort Lasers in SIOM

150J Nd:glass pump/Single shot

Stretcher

OscillatorCompressor

Target

Nd:YAG pump

Amplifiers /10Hz

Power Amplifiers/Single shot

Peta-Watt Ti:Sapphire CPA Laser System

Schematic of PW Laser system

Oscillator

Nd:YAG pump

532nm/10Hz

5-pass

Amplifier

Nd:YAG pump

532nm/10Hz

800nm

~ 25.8J/~29.0fs/ ~ 0.89PW

Reg.Amp

Compressor800nm

0.4J/~23fs/ ~17TW

10Hz

Power

Amplifier

Nd:glass

Pump Laser

527nm

~100J/~20nsSingle shot

10Hz

Final

Amplifier

Compressor

800nm/l~100nm

10nJ/9-12fs 0.5nJ

~2ns 800nm/4mJ

60mJ

800mJ,~1ns

～20J～75J

~35.9J,1ns

2 1.2

~2J,1ns

AOPDF stretcher

680 700 720 740 760 780 800 820 840 860 880 9000.0

0.2

0.4

0.6

0.8

1.0

No

rma

lize

d i

nte

ns

ity

Wavelength (nm)

oscillator

after stretcher

After stretcher：90nm

Oscillator：110nm

Key Tech - Spectra Shaping

Spectrum from oscillator is 110nm, and spectrum after stretcher is 90nm

Ti:S

532nm/10Hz/50mJ

Birefringent

Plate

PC

TFP

Signal

4mJ

Spectra Shaping in Reg. Amp.

Cavity design : High energy

Birefringent Plate: Spectrum shaping

Result:

Input Pump Ti:sapp Pass Output Gain

~0.5nJ/90nm 50 mJ f10*9 (mm) 14 4.0mJ/65nm 107

1 0

2 0

3 0

exp ;

exp 2 ;

exp 3 ;

G n L

G n L

G n L

700 720 740 760 780 800 820 840 860 880 9000.0

0.2

0.4

0.6

0.8

1.0

No

rmal

ized

In

ten

sity

Wavelength (nm)

28nm

65nm

No shaping：28nm

shaped：65nm

Spectra comparison of Reg.

Comparison: Birefringent Plate is effective for broaden

the output spectrum of regenerative amplifier

Gain narrowing effect

●

●

●

0expNG N n L stimulated-emission cross section

1.2/10Hz@532nm 1.2/10Hz@532nm

Pre - Amplifier

Divergence of injected beam →Thermal lens compensation

High pump intensity → high gain

Input Pump Ti:sapphire Pass Output Gain

~4mJ/65nm 2.1J f25*15(mm) 5 800mJ/65nm 200

Ti:Sapphire

700 720 740 760 780 800 820 840 860 880 9000.0

0.2

0.4

0.6

0.8

1.0

N

orm

ali

zed

In

ten

sity

Wavelength (nm)

Pre-Amp. : 65nm

Reg. Amp. : 65nm

Spectra comparison

Spectrum from Pre Amp. maintain same bandwidth, and have better shape.

Key Tech - Suppress Parasitic Lasing

Lower gainFresnel Reflection + large size PL

f80mm×33mm42×50×23mm

Spontaneous emission will be generated and amplified in traverse direction in crystal.

Power Amplifier - 5J

Input Pump Ti:S (mm) Pass Output Gain

300~400mJ 15J/26mm 42*50*23 4 5J/24mm 12-15

Suppress PL ——

absorption coated at

Ti:Sapp side surfaces

gain：3 15

1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.15.0

5.5

6.0

6.5

7.0

7.5

8.0

8.5

9.0

Ga

in

Pump Fluence(J/cm2)

Suppress Parasitic Lasing

30 35 40 45 50 55 60 65 70 7510

15

20

25

30

35

40

Ou

tpu

t e

ne

rgy

(J)

Pump energy(J)

0 20 40 60 80 100 120 140 160

0

2

4

6

8

10

12

14

16

18

20

ou

tpu

t en

erg

e (J

)

Time (minutes)

±5%

Input Pump Ti:Sapp Pass Output Gain Eff.

~2J/50mm 72J/60mm F80*33 3 35.9J 18 ~50%

Suppress Parasitic Lasing

Final Amplifier – 35.9J

220x165

420x210

f150

Key Tech - Dispersion Compensation

Insert angle: 24.1o

Distance between grating：513mm

-200 -150 -100 -50 0 50 100 150 200

0.0

0.2

0.4

0.6

0.8

1.0

Norm

aliz

ed I

nte

nsity

Time (fs)

Without AOPDF:

Pulse width：29.5fs

Compressed Energy: 25.8J

With AOPDF:

Pulse width：29.0fs

29.0fs

-200 -150 -100 -50 0 50 100 150 200

0.0

0.2

0.4

0.6

0.8

1.0

No

rma

lize

d I

nte

ns

ity

Time (fs)

29.5fs

0.89PW

Pulse width－29.0fs

Peak

Power

Energy/pulse

durationLocation

1 0.85PW 28.4J/33fs JAERI (Japan) 2003.3

2 0.89PW 25.8J/29fs SIOM (China) 2006

3 0.72PW 22.5J/31fs IOP (China) 2008

4 ~0.62PW ~24.7J/40fs LIXAM/LOA(France) 2007.2

5 0.5 PW×2 15J/30fs RAL (UK) 2007.10

6 1.1PW 33J/30fs APRI (KOREA) 2010.4

710PW

（ILE）200J/20fs LOA (France) In building

Femtosecond PW-level ultra-intense and ultra-fast

lasers in the world

—Based on Ti:Sapphire, <100fs, >0.5 PW

Output beam (f150mm) is focused by F/4 OAP, which

transform limit is ~7.8μm (1/e2).

Peta-Watt Ti:Sapphire CPA Laser System

M2<2; Strehl Ratio (SR) = real peak intensity/ideal peak intensity ~ 0.3

Adaptive Optics to Improve Focus

Oscillator and Amplifiers Compressor

Focal spot

DM

f150mm

Control System

Larger size DM;

Larger space;

Wavefront Correction with smaller size DM

PW Laser Compressor

Focal spot

DM

Control System

OAP

sensor

Ptv=0.948l, rms=0.092l, SR=0.72Ptv=1.237l, rms=0.183l, SR=0.31

Measured Wavefront

Focused Spot Size Measurement

Before: 14.73×12.0 m2 After: 9.70×10.50 m2

Mx=1.89; My=1.54; M2=1.7; SR=0.31; Mx=1.24; My=1.35; M2=1.3; SR=0.72;

>1021W/cm2 by F=4 OAP;

Contrast ratio

Donald Umstadter, Physics of Plasmas, Vol. 8, pp.1774-1785 , 2001

TW-level Ti:Sapphire CPA Laser System

Measure by third-order femtosecond cross-correlator (Sequoia) at 800nm/10Hz;

Yi Xu, et. al., Chinese optics letter, 2010;

Pre pulse generation:

• ASE during amplification (far)；

• Multi reflection of optics surface;

• Uncompensated high order

dispersion (close);

Optimize the laser.

-450 -400 -350 -300 -250 -200 -150 -100 -50 0 50 100 150 200

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

0.01

0.1

1

Inte

nsity

ps

B

False pulses

Contrast ratio for TW/10Hz laser

36

C: Final amplifier and pump laser

A: Oscillator and Stretcher B: Regen and pre amplifiers

25.8J / 29.0fs, 0.89PWOptics Express 15, 15335 (2007)

Peta-Watt Ti:Sapphire CPA Laser System

Compressor and interaction chamber

0 1 2 3 4 5 60

20

40

60

80

100

Maximum Kinetic energy

Ion

En

erg

y (

keV

)

Laser Energy (J)

Averge Kinetic energy

The single shot neutron yield 5.5 106 neutrons with a 100TW/50 fs driving

laser pulse at the intensity of 1.5×1019W/cm2 .

The backing pressure of CD4 gas: 80 bars. D+ ions density : ~2.4 ×1019 cm-3，cluster radius: 7nm，=50fs, Ipeak=1.5×1019W/cm2

Measured fusion neutron yields and kinetic energies of

D+ ions as a function of incident laser energy.

0.1 1 1010

3

104

105

106

107

Fu

sio

n N

eutr

on

Yie

ld

Laser Energy (J)

Madison et al. ， Phys.

Plasmas (2004)

4104 /J

2.1106neutrons/J

Ditmire et al.,

Nature (1999)

CD4

CD4

D2

D2

Disadvantages of Ti:sapphire CPA laser

Limited gain bandwidth and gain narrowing effect

(amplified pulses re-compressed to > 20 fs);

Thermal effect;

Special optical/electro-optical components necessary to

improve ps-ns intensity contrast

Currently available Ti:sapphire rods ≤ 200 mm diameter

Self lasing

Working wavelength is fixed (800nm for Ti:sapphire)

Limiting focus intensity!

OPCPA vs CPA

Advantages of OPCPA:

Ultra-broad gain bandwidth

(amplified pulses re-compressed

down to 5-15 fs)

Considerable decrease in thermal

loading

Significantly lower level of ASE

Very high gain

No self-lasing

High aperture DKDP crystals are

available

Tunable

Disadvantages of OPCPA:

- Exigent requirements:

-High precision pump-signal pulse

synchronization

- High beam quality of pump lasers

- Short (ps-ns) pump pulse duration

Intricate Front-End to generate ultra-

broad bandwidth signal pulse and optically

synchronized pump pulse

Low pulse to pulse stability?

- High spectral sensitivity of OPCPA to

small changes of the cross-angle between

interacting waves

- High-energy amplification chain is based

on a cascade of nonlinear optical processes

Possible for higher focus intensity!

OPCPA laser (16.7TW/120fs) (2002)

Optics Letters, 27(13), 1135-1137 (2002); Chinese Optics Letters, 1(1), 19-22(2003);

All optically synchronization scheme for 1064nm OPCPA

pumped by Nd: YAG-Nd: Glass hybrid Laser

Nd:YAG

Rege Amp.

Pulse shaping

Nd:YAG Amp.

(2/800ps/1Hz)

1064nm

femtosecond

oscillator

Pulse

stretcher

First

OPCPA

(LBO)

f3x18mm

Second

OPCPA

(LBO)

f4x15mm

Third

OPCPA

(LBO)

φ10x20mm

Pulse

Compressor

Nd:YAG Amp.

(2/800ps/1Hz)Nd:Glass Amp.

1000pJ

100fs30mJ

50pJ/0.3ns 0.01mJ 10mJ3.14J/0.3ns

2.01J/120fs

1064nm120fs16.7TW

YAG-Glass hybrid laser as a pump

120mJ

12J/0.8ns

532nm

OPA I OPA II OPA III

Spectral width of

injected pulse18nm 18nm 18nm

Energy of the injected

pulse50pJ 10 J 8mJ

Pump laser energy 30mJ 120mJ 12.3J

Pump laser intensity 3GW/cm2 4.2GW/cm2 4GW/cm2

Length of the OPA

crystals18mm 15mm 20mm

Output laser energy 10J 10mJ 3.1J

Spectral width of the

output laser pulse18nm 18nm 20nm

Energy Gain 2105 1000 ~400

Parameters of the OPCPA amplifier stages

Seed：1064nm，100fs/18nm, Mira 900

Seed after stretcher：1064nm，300ps Pump laser：532nm，800ps

OPCPA scalability to multi-petawatt power.Sarov – N.Novgorod.

Second phase (0.56PW)38J

0.5ns Compressor

0.5ns 50fs2Nd:glass

amplifier

300J

1ns

180J

1ns 24J

43fsOPA III

KD*P

10cm dia

2

Cr:Forsterite

fs-laser

l=1250nm

Stretcher

40 fs 0.5 ns

2nJ

40 fs 1nJ

0.5 nsNd:YLF

Q-switch laser

l=1053nm

1 J

1.5ns

Synchronization

system

Two-stage

Nd:YLF

amplifier

First phase ( TW level)

32 mJ

70 fs

2 HzOPA I

KD*PCompressor

0.5 ns 70 fs

l=911nm

0.8mJ

0.5ns

2J

1.5 ns

OPA II

KD*P

CW Yb:fiber pump

10W

l=1050…1080nm

l=1250nm

l=911 nm

70 mJ

0.5 ns

1mJ

1.5ns

10mJ

12ns

Pulse shaper

Third phase ( 2 PW)

2Nd:glass

amplifier

2kJ

1.5ns1kJ

1.5ns

150J

0.5ns

100J

50fsCompressor

0.5ns 50fsOPA IV

KD*P

20cm dia

Nd:YLF

Q-switch laser

l=1053nm

10mJ

12ns

Pulse shaper Nd:YLF

amplifier

LWS-20 Double CPA & OPCPA Setup

150 mJ

Acknowledgements:

V. Pervak (LMU), M. Scharrer (Univ. Erlangen)

532 nm

Pump700-1020 nm

Seed

1st stage

Laszlo Veisz, ICUIL Oct 27-31 2008, Shanghai-Tongli, China; OPTICS LETTERS, 2009, 34(16), 2459

Laszlo Veisz, ICUIL Oct 27-31 2008, Shanghai-Tongli, China; OPTICS LETTERS, 2009, 34(16), 2459

IN:

low-contrast

pulse at

OUT:

clean pulse

- at

- polarization

Cross-polarized wave generation

LWS-20 Double CPA & OPCPA Setup

180 mm

520 mm

200 mm

520 mm

DM1DM2

SFG1

G2

G2bG3

G4

G3b

Vacuum compression / spatial beam control

150J / 15 fs @1shot/mn

10 PW

Ampli 0

2J /1Hz

Nd YAG

6J/1Hz

Ampli 1

«LASERIX »

50J /0.1Hz

Nd Glass

100J/0.1Hz

Ampli 2

600J -1shot/mn

Nd Glass

1.5KJ – 1shot/mn

Amplifiers

synchronized

OPCPA

Amplification stages

LBO/BBO

KHz Ti:Sa

30 fs @ 800 nm

500 µJ

Spectral broadening

< 10 fs @ 800 nm

100 µJ, kHz

Yb:KGW

Diode pumped

300 fs, 200 µJ

@ 1030 nm

Amplis Yb:KGW

Yb:YAG

Diode pumped

2 J @ 1030 nm

1Hz

10 fs

@ 800 nm

100 mJ,

1Hz

Front End

Compression

and SHG

1 à 100 ps

1 J @ 515 nm

1 Hz

ILE APOLLON Single beamline 10PW laser

Double CPAHybrid: OPCPA & Ti:S

LEI Conference , Brasov (RO) October 21rst, 2009

Z. Major, LEI, Oct 2009, Brasov

Yb:YAG, 1030 nm, ~3.5 nm bandwidth

Basic concept and layout of Petawatt

Frequency Synthesizer - PFS MPQ Garching,

Germany

Double CPA Hybrid: OPCPA & Ti:S

Hiromitsu Kiriyama, “Generation of high-contrast and high-intensity laser pulses using an OPCPA preamplifier in a

double CPA, Ti:sapphire laser system”, Optics Communications 282 (2009) 625–628.

Contrast radio: ~1010-11

60TW/10Hz/30fs

Double CPA Hybrid: OPCPA & Ti:S

High Power Few-cycles Laser and Carrier Envelop Phase Stability

1fs

single cycles laser (800nm/2.7fs)

0.65fs(650as)

Nature 414, 2001

0.25fs(250as)

Nature 427, 2004Attosecond0.13fs

(130as)Science, Oct., 2006

Sub-100as(~80as)

Science, June, 2008Attosecond pulse in XUV generated by few cycle laser

Few cycles laser

[E(t)=Ea(t)cos(Lt+)] Nature 414, 182（2001）

Carrier Envelop Phase

CEP stability measurement

F-2F interferometer

Science. 2000, Vol. 288, No. 5466, 635-639. Appl. Phy. B, 1999, 69(4), 327-332.

Single path

Two paths

1-3um working wavelength is a balance.

Tunable and longer working wavelength

Few cycle laser with actively

stabilized CEP

Nature, 2003, 421(6):611-616

Few cycle laser with actively

stabilized CEP

Applied Physics B, Volume 99, Numbers 1-2, 149-157.

WP1

iris

WP2M1M2

M3 M4

M5

Hollow fiber tube filled with Neon

Chirped mirrorswedges2.5mJ, <25fs

1mJ, 4.3fs

-30 -20 -10 0 10 20 300

2

4

6

8

fit

measured

Inte

nsi

ty (

a.u

.)

Delay (fs)

~4.3fs

Few cycle laser with passively

stabilized CEP

Opt. Express, 2006,14(21):10109-10116

Based on different frequency generation (DFG)

Few cycle laser with passively

stabilized CEP

Appl. Phys. Lett. 2007, Vol. 90, 171111

OPA：

2

I P S

I P S

2

I P S

I P S

Few cycle laser with passively

stabilized CEP

Appl. Phys. Lett. 2007, Vol. 90, 171111

Ti:Sa laser

6.8mJ/40fs

@800nm, 1kHz

Sa

λ/2

NOPA1

NOPA2

Fiber filter

WLC

Output pulse energy >1.2mJ (1.5 - 1.7m)Time delay line

Time delay line

6.6mJ

Few cycle laser with passively

stabilized CEP

1000 1200 1400 1600 1800 2000 2200 24000.0

0.2

0.4

0.6

0.8

1.0

Inte

ns

ity

Wavelength(nm)

1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400

0.0

0.1

0.2

0.3

0.4

0.52400 2080 1867 1714 1600 1511 1440 1382 1333 1292 1257 1227 1200

0.0

0.1

0.2

0.3

0.4

0.5

Idler wavelength

Perc

entium

Signal wavelength

siganal

idler

total

CEP stability measurement

1400 1500 1600 1700 1800 1900

0

200

400

600

800

1000

1200

1400

CE

P（

mra

d）

Wavelength（nm）

1000f_delay0s (60s)

100f_delay0s (6s)

100f_delay1s (100s)

600f_delay1s （10min）

CEP is more unstable for the shorter wavelength idler pulses, and it can be due to the unstable

intensity of the seed from the WLC generation. The small envelope 1.5m-2.0m is the 2nd

diffraction of the wavelength 0.7m-1.0m.

CEP fluctuation ~0.103rad (rms) for 1.8m pulses

in 10 mins.

*Measured CEP stability is sensitive to the

environment.

400 800 1200 1600 2000 2400 2800

0.0

0.2

0.4

0.6

0.8

1.0

Intens

ity_WL

G

Wavelength(nm)

WLG in the visible

WLG in the infrared

0 1 2 3 4 5 6 7 8 9 10

Time(min)

Pha

se

Jitte

r(ra

d)

-

Time(min)0 1 2 3 4 5 6 7 8 9

WLC

Path1

Time-delay

unit

M M

L L

LL

λ /2

BBO

BS2

BS1Sapphire

VND

OPA

Spectrometer

Path2

2000 2400 2800

990

1000

1010

1600 2000

900

910

920

Time (5s)

Wav

elen

gth

(nm

)

Wav

elen

gth

(nm

)

Intensity (arb.un)

100 200 300 400 500 600 700

(a)

(b)

0 500 1000 1500 2000 2500 3000 3500

-2

0

2

CE

ph

as

e (

rad

.)

Time(s)

(c)

-2

0

2

No

ise

ph

as

e (

rad

.)M

ixin

g p

ha

se

(ra

d.)

(b)

-2

0

2

(a)

476mrad

332mrad

223mrad

1800nm/1kHz φce&noise = φce + φnoise

Environment noise

Incident pulse instability:

• Energy fluctuation

• Beam direction

Accurate CEP stability measurement

Opt. Express, 16(26), 21383(2008)

Beam quality and HHG spectrum

Focus beam profile after SHG, measured by CCD

M2 is ~2 @ 1.8m after retrieval.

With the focus lens f=125mm, the 1/e2 focused beam diameter is ~0.14mm;

Pulse duration is similar to the driving pulse duration ~40fs;

Maximum pulse energy >1.2mJ for 6.6mJ pump energy in OPA2;

The focused intensity >21014W/cm2 from 1.6m to 1.9m.

18 16 14 12 10 8

1

10

100

1000

Inte

nsi

ty_

HH

G

Wavelength(nm)

1600

1700

1800

1900

600-nm-thick Zirconium foil as filter and

f=125mm focus lens.

Applications in Molecular HHG

Molecular HHG

Opt. Express 18, (2010);

Opt. Express 17, (2009) 15061-15067

Further development

Existed laser conditions:

PW level ultra-intense and ultra-fast laser;

High power few cycle laser with tunable working

wavelength and CEP stabilization;

Further development

Contrast ratio improvement

-60 -40 -20 0 20 40

1E-11

1E-10

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

0.01

0.1

1

Inte

nsity(a

.u.)

Delay(ps)

Cleaned pulse

Initial pulse

-20 -15 -10 -5 0 5 10 15 20

1E-11

1E-10

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

0.01

0.1

1

Inte

nsity(a

.u.)

Delay(ps)

Cleaned pulse

Initial pulse

J. R. Rygg, et al. Science 319, 1223 (2008)

1km, 107V/m

1cm, 1012V/m

Radiofrequency cavity (1 m-long) 3D PIC simulation of a plasma wave (UCLA)

100 umC

ourt

esy o

f W

. M

ori &

L.O

. S

ilva

Ez=

mec

p

e≈ 300 GV / m (for ne=1019 cm-3)‏

Laser accelerator

40 35 30 25 20

0.0

2.0x105

4.0x105

6.0x105

8.0x105

1.0x106

Inte

ns

ity

Wavelength(nm)

1700nm

1700nm+800nm

1700nm+800nm_delay

Attosecond science

Zeng et al., Phys. Rev. Lett. 98, 203901 (2007)

Attosecond science

10-9 s 10-12 s 10-15 s 10-18 s

In solids In molecules In atoms

73

Thank you

for your attention!