trd2005,bari,10.09.05
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TRD2005,Bari,10.09.05. Progress report on SiPM development and its applications. Boris Dolgoshein Moscow Engineering and Physics Institute. [email protected]. Single photon Avalance Diodes(SPAD’s): S.Cova et al.,Appl.Opt.35(1996)1956. h . 50 . R 50 . - PowerPoint PPT PresentationTRANSCRIPT
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TRD2005,Bari,10.09.05
Progress report on SiPM development and its applications
Boris DolgosheinMoscow Engineering and Physics Institute
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Single photon Avalance Diodes(SPAD’s): S.Cova et al.,Appl.Opt.35(1996)1956
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Silicon Photomultiplier (SiPM)
NEXT STEP: Large area SiPM`s from 1x1 mm2 > up to 10x10 mm2
R 50
h
substrate
50
Ubias
Multipixel (typically ≤ 1 mm2) Geiger mode photodiode with common readout
TWO STEPS IN DEVELOPMENTS OF GEIGER MODE APD: FIRST STEP: SINGLE PHOTON AVALANCHE DIODE (SPAD),
based on single pixel “photon counter” SECOND STEP: from SPAD to
Depletion1-2m
46 pixels fired
B.Dolgoshein,’Large area SiPM’s…’
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SiPM’s have been developed in Russia during last ~10 years(see International Conferences on New Developments in Photodetection ICNDP-1999,2002,2005)
There are four SiPM’s producers for the time being-at the level of test batches production:
Center of Perspective Technology and ApparatusCPTA,Moscow
MEPhI/Pulsar Enterprise,Moscow
JINR(Dubna)/Micron Enterprise
HAMAMATSU started the SiPM production last year
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R 50
h
pixel
Ubias
Al
Depletion Region2 m
Substrate
20m
42m
Pixel size ~20-30m
Working point: VBias = Vbreakdown + V ~ 50-60 V V ~ 3V above breakdown voltage
Each pixel behaves as a Geiger counter withQpixel = V Cpixel with Cpixel~50fmF
Qpixel~150fmC=106e
Electrical inter-pixel cross-talk minimized by: - decoupling quenching resistor for each pixel - boundaries between pixels to decouple them reduction of sensitive area and geometrical (packing) efficiency
Very fast Geiger discharge development < 500 ps
Pixel recovery time = (Cpixel Rpixel) ~ 20 ns …1mks
Dynamic range ~ number of pixels saturation
ResistorRn=400 k -20M
SiPM today-reminder:
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Sensitive area : 3x3 mm2 # of pixels: 5625
Depletion region: appr. 1 m Pixel size: 30 mx30 m Working voltage: 20…25 V Gain: 1…2
x10**6 Dark rate.room temperature: 20 MHz SiPM noise(FWHM):
room temperature 5-8 electrons -50 C 0.4 electrons
Single pixel recovery time: 1us After pulsing probability: appr. 1%
Optical crosstalk: appr. 30 - 50 % ENF: appr. 1.5-2.0(overvoltage dependent)
3x3mm SiPM parameters
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300 400 500 600 700 8000
20
40
60
80
100
QE·geom
SiPM 3x3 (T=-50 0C)
PMT XP2020Q number 40979(according Philips Photonics)
APD EG&G C30626E (NIM A428 (1999) 413-431)
QE
, %
Wavelength , nm
SiPM 1x1 (T=+20 0C)
Spectral dependence of the photon detection efficiency (PDE) for different photodetectors
178nm-5.5%,(1mmx1mm SiPM)
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0
10
20
30
40
0 1 2 3 4 5 6
0
5
10
15
20
Ubreakdown
=48V
one pixel gain (exp. data)
One
pix
el g
ain
M, 1
05
Overvoltage U=U-Ubreakdown
, V
detection efficiency ( =565nm)
Eff
icie
ncyo
f lig
ht re
gistr
atio
n, %
one pixel gain (linear fit)
Photon detection efficiency= QE(~80%)xx packing efficiency(active/total area,~40%)xx Geiger efficiency(~70%)
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Optical Crosstalk OC
–due to secondary light emitted in Geiger discharge: 10**-5 photons/one electron
adjacent pixels are fired- fig’s.
OC increases drastically with a Gain
becomes >1 for a Gain > few timesx10**7 selfsustening discharge pixel independence and Poisson statistics of fired pixels are violated Excess Noise Factor ENF becomes too large
Secondary light: Effective absorption length(Si)- appr. 50 mkm Effective wavelength- appr. 1000 nm
B.Dolgoshein,’Large area SiPM’s…’
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0 1 2 3 4 5
1E-3
0,01
0,1
1
96 mkm
128 mkm
64 mkm
Op
tica
l cro
ssta
lk
Gain, 106
32 mkm
B.Dolgoshein,’Large area SiPM’s…’
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200 400 600 800 1000
1
10
100
1000
10000
1
0
Co
un
ts
QDC channel
SiPM Z-type. U-Ubd
=8V. kopt
=1,85. tgate
=80ns.
QDC LeCroy 2249A. Noise.
B.Dolgoshein,’Large area SiPM’s…’
Optical crosstalk,SiPM 1x1 mm2,dark noise
Crosstalk==>non-Poissonian distribution:
pixel fired/phe=1.7 ENF=1.6
Crosstalk suppression by special SiPM topology:test structure,PRELIMINARY!
Poisson distribution:
pixel fired/phe= 0.98+-0.03 ENF= 0.97+-0.05
Gain 3x10**6
Gain 3x10**7
0 100 200 300 400 500 6001
10
100
1000
10000
eve
nts
channel
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0 2000 4000 6000 8000 10000 120000
200
400
600
800
1000
1200
1400
1600
1800
2000
Data: Data1_ampModel: ExpDecay1 Equation: y = y0 + A1*exp(-(x-x0)/t1) Weighting:y No weighting Chi^2/DoF = 565.44691R^2 = 0.99897 y0 1932.69131 ±11.98254x0 77.60337 ±--A1 -1926.00611 ±--t1 1615.08307 ±37.05734
Am
plit
ud
e o
f th
e s
eco
nd
im
pu
lse
, m
V
Distance between two light impulses, ns
Recovery time. SiPM Z105 (U=60,13). Ubreakdown
=52,4V. 13/01/2005
LED L53SYC (595nm), timpulse
=10ns, Ugen
=-9v, L=1sm.
Chargefirst and second impulse arear = (-2,6:10) ns = -10,60622 V*nsone pixel arear = (-0,4:4)ns = -0,01907 V*nsN
pixels = 556
Recovery time of single pixel: C(pix)xR(pix)-->20ns…..a few mks
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5
6
7
8
9
10
11
12
8 10 12 14 16 18 20 22 24 26200
250
300
350
400
450
500
550
MIP
MIP
, QD
C c
hann
els
Temperature T, 0C
a) pixel gain
Pixe
l gai
n, 1
05
0
5
10
15
20
53 54 55 56 570
250
500
750
1000
MIP
MIP
, QD
C c
hann
els
Bias voltage U, V
b) pixel gain
Pix
el g
ain,
105
Fig.5
Temperature and bias voltage dependence:delta T(V) Gain Signal=GainxPDE -1 C +2.2% +4.5% +0.1V +4.3% +7%
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LED signal ~150 pixels
A=f(G, , x)
Comparison of the SiPM characteristics in magnetic field of B=0Tand B=4T
(very prelimenary, DESY March 2004)
No Magnetic Field dependence at 1% level
(Experimental data accuracy)
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SiPM signal saturation due to the limited total number of Sipm’s pixels
1 10 100 1000 100001
10
100
1000
Number of pixels fired
Number of photoelectrons
576 1024 4096
Response functions for the SiPMs with different total pixel numbers measured for 40 ps laser pulses
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Long term stability of SiPM
20 SiPMs worked during 1500 hours
Parameters under control:
•One pixel gain
•Efficiency of light registration
•Cross-talk
•Dark rate
•Dark current
•Saturation curve
•Breakdown voltageNo changes within experimental errors
5 SiPM were tested 24 hours at increased temperatures of 30, 40, 50, 60, 70, 80, and 90 degrees
No changes within experimental accuracy
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SiPM long term stability
0 2 4 6 8 10 12 14 16 18 2010-2
10-1
100
101
102
103
before tests after 500 hours after 1500 hours
dark rate, kHzSi
PM p
aram
eter
s
SiPM number
efficiency of light registration, %
gain (*106)
dark current, microAmper
Parameters under control:
•Efficiency of light registration
•One pixel gain
•Dark rate
•Dark current
20 tested SiPMs worked during 1500 hours
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SiPM today:+ -
Low noise,high gainGood single electron resolutionVery good timingSmall recovery timeVery low nuclear counting effectInsensitivity to BSimple calibration and monitoringVow bias voltageLow power consumptionCompactnessRoom temperature operationGood T and V stabilitySimplest electronicsRelatively low expected cost(lowresistivity Si,simple technology)
Not very high PDE
Small area
High dark rate(~ area)
Exess Noise Factor islarge enough due to Optical Xtalk