trapped-ion quantum control for quantum information and
TRANSCRIPT
Nicolás Pulido
Christian OspelkausPhysikalisch-Technische Bundesanstalt, Braunschweig
Institut für Quantenoptik, Leibniz Universität Hannover
Towards a Small-Scale
Trapped-Ion Quantum
Processor Based on
Near-Field Microwave
Quantum Logic Gates
Qubits
Classical unit of information
Quantum degree of freedom
Superposition principle
“0”+
- “1”
Logic gates
Reversible operations
Uȁ ↑, 0
ȁ ↓, 1
1
2ȁ ↑ + ȁ ↓
3
748 957 416 402 469 183 253 951 … …
x 593 165 415 037 541 213 576 874 … …
… … … … …=
890 589 346 128 763 258 109 854 … …
… x … x … x …=
Basis for public key cryptography
(RSA)…Basis for secure websites,
digital signatures,
encrypted email,…
Mare Nostrum, Barcelona
Quantum computers and cryptography
4
Quantum computers and cryptography
890 589 346 128 763 258 109 854 … …
… x … x … x …=
(well, it can be done in polynomial time…)
Peter Shor
𝒰⨂⨂⋯
5
Quantum simulation
n=128 spins: 2n ≈ 3.4∙1038 entries
2n+5 ≈ 1040 Bits (32 bits per complex number)
22n+10 Bits ≈ 1080 Bits
Feynman, 1982:
Quantum computers
(and simulators)
can do much better!
State vector for n spins
Compute evolution (matrix)
Number of protons in the universe: ≈ 1080Crab nebula
The challenge
6
State detection
2,2
1,1
1,1
1,2 0,2
1,2 2,2
0,1
Be9
2/1S
2/3P
Notation: FmF,
3,3
313 nm
0
1
a qubit!
7
Raman
laser beams
State initialization via optical pumping
Preparation of arbitrary one-ion states via Raman laser beams
“Single qubit gate”
State manipulation
GHz101
Raman process
e
313 n
m
GHz80
8
Coupling to the motion
+n=0
n=1
n=2
n=3
Motional
Degree of Freedom
Internal
Degree of Freedom
Sideband transitions Basis for:
Ground state cooling
Fock, “cat” and coherent
states of motion
Quantum logic
Aluminum ion clock
n=0
“red” sideband
“blue” sideband
carrier
n=1n=2n=3
n=0n=1n=2n=3
Diedrich et al., PRL 62, 403 (1989)
9
Raman
laser beams + +
Normal modes
Description of normal modes as harmonic oscillators
Sideband transitions for normal modes
10
Entangling quantum logic gates
ninn 2
1Entangled state!
Mølmer and Sørensen, PRL 82, 1835 (1999)
Solano et al., PRA 59, 2539 (1999)
Sackett et al., Nature 404, 256 (2000)
Raman
laser beams
n
n
1 n 1 n
n n
1 n 1 n
1 n
1 n
1 n
1 n
11
A scalable, solid-state based platform for ion qubits
D. Wineland et al., J. Res. NIST 103 (1998)
D. Kielpinski et al., Nature 417 (2002)
++++
++ ++++
Two-qubit gate
processing
storage
processing
detection
laser
read-outread-out
Single-qubit gate
DCRF
12
Surface-electrode ion traps for scalability
DC electrodes
RF electrodes
Field lines:
Chiaverini et al., Quant. Inf. Comp. 5, 419 (2005)
Seidelin et al., Phys. Rev. Lett. 96, 253003 (2006)
14
Trap fabrication
PTB cleanroom center,
thanks to divisions 2 &4!
A. Bautista-Salvador et al., NJP 21, 043011 (2019); patent DE 2018 10 111 220
15
Growing of thick metal films
A. Bautista-Salvador et al., NJP 21, 043011 (2019); patent DE 2018 10 111 220
16
Multi-Layer Ion Trap
17A. Bautista-Salvador et al., NJP 21, 043011 (2019); patent DE 10 2018 111 220
17
Choice of metals for electrodes
Hide dielectrics as much as possible
Choice of substrate materials
Scalable multilayer method
Fabrication requirements
+
-
RF loss
Heatconductivity
4K vs. 300KMachineability
Silicon, Aluminum
Nitride, Quartz,
Sapphire, …
18
Layer thickness & supported current
( → also: „atom chips“)
Integration (electronics, optics)
Turnaround, yield
People
Fabrication requirements
Jonathan
Morgner
Amado
Bautista-
Salvador
Martina
Wahn-
schaffe
MAIUS-B launch,
Esrange
> 80%
1 day (SL)
4 weeks (ML)
A. Bautista-Salvador et al., NJP 21, 043011 (2019); patent DE 10 2018 111 220
19
Yes! I am an inventor!
20
Vision: trap foundry service!
Are you interested in a surfacetrap? Let us know! We canpossibly make it for you…
Ion-trap multi-qubit quantum logic
Internal states
as qubits
Motion as a
quantum buse
Raman process
+ +
(Two-level atom) (Harmonic oscillator)
Sideband
transitions
n=0n=1n=2n=3
n=0n=1n=2n=3
Entangling gates,
clocks, …
Raman lasers?
Why not usemicrowaves?≈ GHz
200−800nm
22
Near-field idea
Free-space laser field
Basic near-field idea
Ideal near-field
geometry
𝐸
𝐸
𝐼𝑀𝑊
𝐼𝑀𝑊𝐼𝑀𝑊
200 − 800 nm
𝑥0 = ℏ/(2𝑚𝜔trap) ≈ 10 nm
𝑥0
𝐵𝐵 − ∆𝐵
Ospelkaus et al., PRL 101, 090502 (2008)
See also: Mintert and Wunderlich, PRL 87, 257904 (2001)
24
No
spontaneous
emission
J. Amini
"Integrated"
quantum
control
Temperature
insensitivity
Potentially
easier to
control
Nature 476, 181 (2011)
PRL 101, 090502 (2008)
Near-field idea
25
Simultaneous blue and red
sideband drive
Analysis π pulse phase scan
yields fidelities
Fidelity 0.76(3)
Entangling two-qubit gate
𝑃ȁ ↑↑
𝑃ȁ ↓↓
𝑃ȁ ↓↑ + 𝑃ȁ ↑↓
Π = 𝑃ȁ ↑↑ + 𝑃ȁ ↓↓ − 𝑃ȁ ↓↑ + 𝑃ȁ ↑↓
Nature 476, 181 (2011)
Further results
• Sideband cooling
• Micromotion nulling
• Field mapping
• Individual-ion
addressing (4x)
U. Warring et al., PRA 87,
013437 (2013).
U. Warring et al., PRL 110,
173002 (2013).
See also: Oxford!
26
Meander Design
U. Warring et al., PRA, 87, 013437 (2013)
Skin effect and inductive couplings
Full-Wave numerical simulations (Ansys HFSS)
M. Carsjens et al., Appl. Phys. B 114, 243 (2014)
27
Characterization of Microwave Near-Fields
𝐵 ∝ ℜ 𝑒𝑖𝜔𝑡𝜅 Ԧ𝑒𝛼 sin𝜓 − 𝑖 Ԧ𝑒𝛼−𝜋/2 cos𝜓
+ 𝑄𝛽 cos𝜓 + 𝑖𝑄𝛽−𝜋/2 sin𝜓 ∙𝑥 − 𝑥0𝑧 − 𝑧0
+⋯
ȁ
2,0
↔
1,0
ȁ
2,1
↔
1,1
𝛽 99,9° 109(12)°
𝛼 24,3° 31.1(3)°
𝜓 6,4° 4,3(1,2)°
𝜅 8,5 μm 8,7(1,0) μm
𝑥0 45,5 μm 45,3(1) μm
𝑧0 −0,8 μm −0,8(2) μm
M. Wahnschaffe et al., Appl. Phys. Lett. 110, 034103 (2017)
28
Field-independent qubit
9Be+ at 223 G
-1,000
+1,000
0
𝑓 [MHz]
𝐵 [G]400 800
-1
+1
0 𝐵 [G]400
𝜕𝐸/𝜕𝐵
𝜇𝐵
ȁ2, +2
ȁ2, −2ȁ2, −1
ȁ2, 0
ȁ2, +1
ȁ1, +1
ȁ1,0
ȁ1, −1
ȁ1, −1
ȁ2, +2
ȁ1,0
ȁ1, +1
ȁ2, −2ȁ2, −1
ȁ2, 0
ȁ2, +1NIST Quantum II
PTB / LUH
→ NIST, Oxford
34
Controlling the motion
Motional mode ሶ𝒏 [ph/ms]
HF-Rocking 0.028±0.001
1-ion-HF 0.122±0.01
1-ion-LF 0.116±0.01
ത𝑛 = 0.12 (3)𝜏𝜋 = 400 µ𝑠
𝜔 = 2𝜋 7.2 MHz
35
Mølmer-Sørensen gate
n
n
1 n 1 n
n n
1 n 1 n
1 n
1 n
1 n
1 n
Mølmer and Sørensen, PRL 82, 1835 (1999)
ninn 2
1Entangled state!
36
Mølmer-Sørensen gate
(With K. Hammerer, M. Schulte)
H. Hahn et al., npj Quant. Inf. 5, 1 (2019)
ℱ = 98.2 1.2 %
38
Pulse shaping
Square
1st order sin2
2nd order sin2
𝑥
𝑝
Square
1st order sin2
2nd order sin2
G. Zarantonello et al., arXiv:1911.03954 [quant-ph] (2019)
(With K. Hammerer, M. Schulte, R. F. Werner) 40
Order 17 shaped pulse
vs. 7-loop square pulse
Same pulse energy per
gate
Noise injection on radial
mode frequency
Pulse shaping
G. Zarantonello et al., Phys. Rev. Lett. 123, 260503 (2019)
41
Histogram fitting
ℱ = 99.5 % 99.3%…99.7%
Threshold detection (SPAM corr)
ℱ = 99.7 % 99.6%…99.8%
Maximum likelihood method
ℱ = 99.2 % 99.1%…99.7%
for gate without injected noise
No dynamic decoupling yet(!)
Encouraging results on
higher energy pulses
Integrated high-fidelity logic operations
G. Zarantonello et al., Phys. Rev. Lett. 123, 260503 (2019)
(With K. Hammerer, M. Schulte, R. F. Werner) 42
Where does that take us?
43
Time-varyingAC Zeeman
shifts
SPAM erroraffects gate
characterization
Anomalousmotionalheating
Frequentreloading
Repetitive
gates
Dynamic
decoupling
Cryo trap &
Automation
Cryo trap or
Surface cleaning
Small-scalequantumprocessor
Next Fabrication Step: Connectivity
Laser Ions
Ion Trap
Interposer
Standard chip carrier
Wire bond
Through-Substrate Via
45
The future: scaling
Multi site operation
Laser zone
Single qubit op. zone
Entanglement zone
Requires:
Linear transport
X junction
Sympathetic cooling?
46
Cryogenic trap
51(T. Dubielzig, M. Cabero-Müller)
NA = 0,5 (obscuration ~40%)
Magnification = 40x
8mm
180mm
Collaboration with NIST Boulder,
Precision Photonics, X.-P. Huang,
PTB (A. Linkogel, M. Sommerfeld,
A. Wiegmann, M.Schulz),
AEI (M. Dehne, J. Bogenstahl),
Sandia National Laboratories
Interferometric alignment @PTB
Ultra-low vibration (<8 nm RMS), analysis limited
by interferometer performance
Cooling power 1.2 W @4.2 K
Low motional heating expected
Should exhibit high-fidelity multi-qubit gates
Cyogenic trap
He (gas)
9Be+, 11/22/2019
52
Where does that take us?
53
User-ready single-ion
optical clock
opticlock has already demonstrated thepower of integration and automation
opticlock shares many components andtechnologies with our challenge
Apply to QC!
The integrated ion trap quantum device
Integrated
light source
Optical
waveguide
and coupler
Microwave
control
54
RT ion trap @ PTB
Micro trap fabrication
Cryo trap @ LUH
Cryogenic 5 T Penning Trap
Group activities
Ultra-low vibration
cryogenic setup
(< 8 nm RMS)
THANK YOU!
Labs and
offices
ERC Stg
„QLEDS“
SFB 1227 DQ-mat
Undergrads
Jonathan Morgner
Chris Nguyen
Julian Pick
Simon Roßmann
Jan Schaper
Florian Ungerechts
Jan Sebastian Warncke
PhD students
Matthias Borchert
Julia-Aileen Coenders
Timko Dubielzig
Sebastian Halama
Johannes Mielke
Malte Niemann
Teresa Meiners
Nicolás Pulido
Giorgio Zarantonello
Postdocs
Juan-Manuel Cornejo
Henning Hahn
Amado Bautista-Salvador
Humboldt / Mercator fellow
Ralf Lehnert (Indiana University, Bloomington)
Collaborators
NIST Ion Storage Group
M. Marangoni and G. Cerullo (Milan)
S. Ulmer (CERN) and the BASE collaboration
Piet Schmidt and Tanja Mehlstäubler (PTB)
J. Schöbel and A. Waag (TU Braunschweig)
K. Hammerer, M. Schulte, R. F. Werner (ITP, LUH)
MicroQC consortium
Osaka U and NICT (K. Hayazaka, K. Toyoda, U. Tanaka, T. Mukaiyama)
Daniel Rodríguez (Granada)
QUARTIQ
Funding
Quantum
Frontiers
56