transistor 2857
TRANSCRIPT
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2N2857
Prelim. 7/98Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail [email protected] http://www.semelab.co.uk
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)30V15V2.5V40mA
200mW300mW
65 to 200C
VCBO Collector Base VoltageVCEO Collector Emitter VoltageVEBO Emitter Base VoltageIC Collector CurrentPD Total Device Dissipation @ TA =25CPD Total Device Dissipation @ TC =25CTSTG , TJ Operating and Storage Temperature Range
NPN TRANSISTOR
FEATURES SILICON NPN TRANSISTOR
APPLICATIONS: AMPLIFIER, OSCILLATOR AND
CONVERTER APPLICATIONS UP TO500MHz
MECHANICAL DATADimensions in mm (inches)
TO-72 METAL PACKAGE
0.48 (0.019)0.41 (0.016)
dia.
4.95 (0.195)4.52 (0.178)
4.95 (0.195)4.52 (0.178)
5.33
(0.21
0)4.
32 (0
.170)
12.7
(0.50
0)m
in.
1
2
3
4
2.54 (0.100)Nom.
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2N2857
Prelim. 7/98Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail [email protected] http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
V
nAm A
dB
pF
dB
ps
GHz
pF
mW
30152.5
101
30 150
3.8 4.5
1.4
12.5 19
4 7 15
1 1.9
0.6 1
30
IC = 1m A IE = 0IC = 3mA IB = 0IE = 10m A IC = 0VCB = 15VIE = 0 Tamb= 150CVCE = 1V IC = 3mAVCE = 6V IC = 1.5mAf = 450MHz RG = 50WVEB = 0.5V IC = 0f = 1 MHzVCE = 6V IC = 1.5mAf = 450MHz RG = 50WVCB = 6V IC = 2mAf = 31.9MHzVCE = 6V IC = 5mAf = 100 MHzVCE = 10V IC = 0f = 1 MHzVCB = 10V IC = 12mAf = 500MHz
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
V(BR)CBO* Collector Base Breakdown VoltageV(BR)CEO Collector Emitter Breakdown VoltageV(BR)EBO Emitter Base Breakdown Voltage
ICBO Collector Base Cut-off Current
hFE DC Current Gain
NF Noise Figure
CEBO Emitter Base Capacitance
Gpe Power Gain (Neutralised)
rbBCbc Feedback Time Constant
fT Transition Frequency
Cre Reverse Capacitance
Pc Oscillator Power Output