tobias junginger low energy muon spin rotation and point contact tunneling on niobium thin films

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Low energy muon spin rotation and point contact tunneling on niobium thin films The sixth international workshop on thin films and new ideas for RF superconductivity [email protected] 1 Sample preparation: G. Terenziani & S. Calatroni (CERN) PCT: T. Proslier (ANL) & J. Zasadzinzki (Illinois Institute of Technology, Chicago) LEmuSR: A. Suter (PSI) 06/10/2014

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Muon spin rotation (muSR) and point contact tunneling (PCT) are used since several years for bulk niobium studies. Here we present studies on niobium thin film samples of different deposition techniques (diode, magnetron and HIPIMS) and compare the results with RF measurements and bulk niobium results. It is consistently found from muSR and RF measurements that HIPIMS can be used to produce thin films of high RRR. Hints for magnetic impurities are found on HIPIMS and dcms samples. The Meissner effect is linear on all tested samples.

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Page 1: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Low energy muon spin rotation and point contact tunneling on niobium thin films

The sixth international workshop on thin films and new ideas for RF superconductivity [email protected] 1

• Sample preparation: G. Terenziani & S. Calatroni (CERN) • PCT: T. Proslier (ANL) & J. Zasadzinzki (Illinois Institute of

Technology, Chicago) • LEmuSR: A. Suter (PSI)

06/10/2014

Page 2: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Motivation

The sixth international workshop on thin films and new ideas for RF superconductivity [email protected] 2

• Niobium on copper is the material of choice for many accelerator cavities

• Despite many advantages compared to bulk niobium the technology is limited by a stronger Q-slope. Origin and correlation to the surface properties is not yet understood

• Low energy muon spin rotation (LEmuSR) and point contact tunnelling (PCT) have been used for bulk niobium studies

• Our aim is to use these techniques on niobium on copper films in order to find out, whether these techniques can reveal differences compared to bulk niobium

06/10/2014

Page 3: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Content

The sixth international workshop on thin films and new ideas for RF superconductivity [email protected] 3

• Point Contact Tunnelling (PCT) • Review of measurements on bulk niobium • Results on niobium films

• Low Energy Muon Spin Rotation (LEmuSR) • Review of measurements on bulk niobium • Results on niobium films

• Conclusions

06/10/2014

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PCT on clean niobium

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E.L Wolf - Principles of Electron Tunneling Spectroscopy - Oxford Scholarship Online 2012

06/10/2014 The sixth international workshop on thin films and new ideas for RF superconductivity [email protected]

Page 5: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

PCT on bulk niobium - Low temperature baking effect

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unbaked

125°C baked (24h)

Observations: – Zero-bias conductance – Broadened DOS

The low temperature baking gives – Reduced zero bias conductance – Less broadened DOS

T. Proslier et al. – Tunneling study of cavity grade Nb: Possible magnetic scattering at the surface – APL 2008

06/10/2014 The sixth international workshop on thin films and new ideas for RF superconductivity [email protected]

Page 6: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

PCT on bulk niobium – High temperature baking effect

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Blue: 1000°C Baking Red: 1400°C Baking

P. Dhakal et al. - Effect of high temperature heat treatments on the quality factor of a large-grain superconducting radio-frequency niobium cavity – PRSTAB 2013

Higher baking temperature (better RF performance) shows: • less low energy gaps • smaller Γ values (sharper

distributions)

Page 7: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Few zero bias peaks Very few small gaps measured (<1 meV) Sharpest Distributions Very low Gamma/Delta values (< 10%) Homogeneous sample

PCT on niobium on copper (dcms)

Page 8: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Zero bias peaks -> mag impurities Small gaps measured (~1.3 meV) Distributions fairly sharp Good Gamma/Delta values (< 10%) Homogeneous sample

PCT on niobium on copper (HIPIMS)

Zero Bias Peaks

For RF measurements see Giovanni’s talk

Page 9: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

No Zero bias peaks Small gaps measured (<1.3 meV) Widest Distributions High Gamma/Delta values Inhomogeneous sample

PCT on niobium on copper (strongly oxidized dcms) For RF measurements see T. Junginger, PhD thesis University of Heidelberg (2012)

Page 10: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Point Contact Tunnelling – Conclusion

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• Investigated by PCT Nb on Cu samples can look as good as the best performing bulk niobium samples

• HIPIMS sample showed zero bias peaks -> Magn. Impurities? • A sample with a huge residual resistance showed small gaps, a

wide distribution and high Gamma/Delta values but no zero bias peaks

• There is a correlation to the low field residual resistance but the stronger Q-slope of the Nb on Cu technology cannot be explained by the DC properties measured with PCT

RF≠DC 06/10/2014 The sixth international workshop on thin films and new ideas for RF superconductivity

[email protected]

Page 11: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

LEmuSR on bulk niobium

11 06/10/2014 The sixth international workshop on thin films and new ideas for RF superconductivity [email protected]

A. Romanenko et al. - Strong Meissner screening change in superconducting radio frequency cavities due to mild baking – APL 2014

Local (London) Non-local (Pippard)

• Non exponential penetration • Taking non-locality into account exponential fit possible • Cold region of 120°C baked sample shows a strong change in Meissner screening with depth

Page 12: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

LEmuSR on niobium on copper

06/10/2014 The sixth international workshop on thin films and new ideas for RF superconductivity [email protected] 12

λ=38.8 nm

λ=21.5 nm

λ=26.4 nm

• Penetration depth almost twice as deep in dcms compared to HIPIMS

• Local London theory applicable to Nb films

• No change in Meissner screening with depth

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LEmuSR on niobium on copper

• Zero field spectra of HIPIMS sample shows clear signs of magnetization at the surface and at 105 nm depth

• For dcMS sample weaker signs are found at the surface and no signs at 105 nm depth

• Further experiments are necessary to rule out trapped flux and muon diffusion

Page 14: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Conclusions

The sixth international workshop on thin films and new ideas for RF superconductivity [email protected] 14

• With PCT we find zero bias peaks and muSR gives direct evidence of magnetization of the HIPIMS sample (Magn. Impurities?)

• No change in Meissner screening with depth • Higher RRR does not necessarily result in a

less pronounced Q-slope (see also talks of Sarah and Giovanni)

06/10/2014

Page 15: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Backup Slides

06/10/2014

The sixth international workshop on thin films and new ideas for RF

superconductivity [email protected]

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Page 16: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Muon-spin rotation (μSR) technique

Sµ(0)

Bμ = (2π/γμ) νμ

Page 17: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Depth dependent µSR measurements

λ

B(z)

z

Bext

0

superconductor

B(z) = Bext exp(−z /λ)

Jackson et al., Phys. Rev. Lett. 84, 4958 (2000)

Page 18: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

More precise: use known implantation profile

Jackson et al., Phys. Rev. Lett. 84, 4958 (2000)

Page 19: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

Standard DCMS Temp dependence

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HIPIMS 86 Hz Statistic

Zero bias peaks -> mag impurities Small gaps measured (<1.3 meV) Broadest Distributions Large Gamma/Delta values (> 10%) Inhomogeneous sample

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HIPIMS 86 Hz Temp dependence

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HIE e9 Statistic

Few Zero bias peaks – Small gaps measured (<1.3 meV),

broad distribution Distributions fairly sharp in gamma Good Gamma/Delta values (< 10%)

with few “hot spots”.

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HIE e9 Temp dependence

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HIE i9 Statistic

Small gaps measured (<1 meV), broad distribution

Distributions fairly sharp in gamma Good Gamma/Delta values (< 10%)

with few “hot spots”.

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HIE i9 Temp dependence

Page 26: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

06/10/2014

The sixth international workshop on thin films and new ideas for RF

superconductivity [email protected]

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Page 27: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

06/10/2014

The sixth international workshop on thin films and new ideas for RF

superconductivity [email protected]

27

M.2.7

M.2.3

Page 28: Tobias junginger   low energy muon spin rotation and point contact tunneling on niobium thin films

06/10/2014 28

Tested Substrate Surface Treatment

Coating RBCS [nΩ]

Rres [nΩ]

RRR Δ/kB [K]

Remarks

4/12 M1.1 SUBU HIPIMS 140 A

400 (530)

310 3.7 17.8 Peel off already at this test?

9/12 M2.1 SUBU dcms 515 (6861)

3640 (1) - Peel off at iris

12/12 H8.6 EP in 1999 SUBU

dcms 526 91 - - Peel off on cut-off tube

02/13 H8.7 EP in 1999 SUBU

dcms 491 131 - - Millimetre sized defects observed

05/13 H8.8 EP in 1999 SUBU

HIPIMS 200 A

520 15 (8) - Slow cool down

07/13 M.1.2 SUBU HIPIMS 140 A

? 13000 - - Peel off

08/13 M2.2 SUBU HIPIMS 200 A

313 (4171)

55 (15.7) -

11/13 M2.3 EP+SUBU HIPIMS 200A

352 (4691)

4.4 13.1 18.0 EP; Field emission

12/13 M2.4 EP+SUBU HIPIMS 240 A

378 (5031)

13.3 22.1 18.0 Q-switch/Field emission

03/14 M.1.3 EP+SUBU HIPIMS 55 A

376 53 - - Q-switch/Field emission/Strong Q-slope

04/14 M.2.5 EP+SUBU HIPIMS 240 A

413 123 - - Residual resistance increased by processing

[1] Quadratically scaled to 1.5 GHz for comparison [2] Values in parenthesis have only been obtained from frequency shift