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TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Trimmed Offset Voltage:TLC277 . . . 500 µV Max at 25°C,VDD = 5 V
Input Offset Voltage Drif t . . . Typically0.1 µV/Month, Including the First 30 Days
Wide Range of Supply Voltages OverSpecified Temperature Range:
0°C to 70°C . . . 3 V to 16 V–40°C to 85°C . . . 4 V to 16 V–55°C to 125°C . . . 4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage RangeExtends Below the Negative Rail (C-Suffix,I-Suffix types)
Low Nois e . . . Typically 25 nV/ √Hz at f = 1 kHz
Output Voltage Range Includes NegativeRail
High Input impedanc e . . . 1012 Ω Typ
ESD-Protection Circuitry
Small-Outline Package Option AlsoAvailable in Tape and Reel
Designed-in Latch-Up Immunity
description
The TLC272 and TLC277 precision dualoperational amplifiers combine a wide range ofinput offset voltage grades with low offset voltagedrift, high input impedance, low noise, and speedsapproaching that of general-purpose BiFETdevices.
These devices use Texas instruments silicon-gateLinCMOS technology, which provides offsetvoltage stability far exceeding the stabilityavailable with conventional metal-gate pro-cesses.
The extremely high input impedance, low biascurrents, and high slew rates make these cost-effective devices ideal for applications which havepreviously been reserved for BiFET and NFETproducts. Four offset voltage grades are available(C-suffix and I-suffix types), ranging from thelow-cost TLC272 (10 mV) to the high-precision TLC277 (500 µV). These advantages, in combination with goodcommon-mode rejection and supply voltage rejection, make these devices a good choice for newstate-of-the-art designs as well as for upgrading existing designs.
Copyright 1994, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.
1
2
3
4
8
7
6
5
1OUT1IN–1IN+GND
VDD2OUT2IN–2IN+
D, JG, P, OR PW PACKAGE
3 2 1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC2OUTNC2IN–NC
NC1IN–
NC1IN+
NC
FK PACKAGE(TOP VIEW)
NC
1OU
TN
C2I
N +
NC
NC
NC
GN
DN
C
NC – No internal connection
P PackageTA = 25°C25
20
15
10
5
4000–4000
800
30
VIO – Input Offset Voltage – µV
Per
cent
age
of U
nits
– %
–800
DISTRIBUTION OF TLC277INPUT OFFSET VOLTAGE
VD
D
473 Units Tested From 2 Wafer LotsVDD = 5 V
(TOP VIEW)
LinCMOS is a trademark of Texas Instruments Incorporated.
查询TLC272供应商 捷多邦,专业PCB打样工厂,24小时加急出货
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICESCHIP
TAVIOmaxAT 25°C
SMALLOUTLINE
(D)
CHIPCARRIER
(FK)
CERAMICDIP(JG)
PLASTICDIP(P)
TSSOP(PW)
CHIPFORM
(Y)
500 µV TLC277CD — — TLC277CP — —
0°C to 70°c
500 µV2 mV
TLC277CDTLC272BCD — —
TLC277CPTLC272BCP — —
0°C to 70°c5 mV TLC272ACD — — TLC272ACP — —10mV TLC272CD — — TLC272CP TLC272CPW TLC272Y
500 µV TLC277ID — — TLC277IP — —
40°C to 85°C
500 µV2 mV
TLC277IDTLC272BID — —
TLC277IPTLC272BIP — —
–40°C to 85°C5 mV TLC272AID — — TLC272AIP — —
10 mV TLC272ID — — TLC272IP — —
55°C to 125°C500 µV TLC277MD TLC277MFK TLC277MJG TLC277MP — —
–55°C to 125°Cµ
10 mV TLC272MD TLC272MFK TLC272MJG TLC272MP — —
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
description (continued)
In general, many features associated with bipolar technology are available on LinCMOS operational amplifierswithout the power penalties of bipolar technology. General applications such as transducer interfacing, analogcalculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 andTLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remoteand inaccessible battery-powered applications. The common-mode input voltage range includes the negativerail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-densitysystem applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltagesup to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handlingthese devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterizedfor operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full militarytemperature range of –55°C to 125°C.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
equivalent schematic (each amplifier)
P5 P6
OUT
N7N6
R7N4
C1R5
N3
GND
N2
D2R4D1R3
N1
IN+
IN–
P1
R1
P2
R2 N5
R6
P3 P4
VDD
TLC272Y chip information
This chip, when properly assembled, displays characteristics similar to the TLC272C. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTEDTO BACKSIDE OF CHIP.
+
–1OUT
1IN+
1IN–
VDD(8)
(6)
(3)
(2)
(5)
(1)
–
+(7) 2IN+
2IN–2OUT
(4)
GND
60
73
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †
Supply voltage, VDD (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input) –0.3 V to VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output current, IO (each output) ±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VDD 45 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of GND 45 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, or PW package 260°C. . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.2. Differential voltages are at IN+ with respect to IN–.3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGETA ≤ 25°C
POWER RATINGDERATING FACTORABOVE TA = 25°C
TA = 70°CPOWER RATING
TA = 85°CPOWER RATING
TA = 125°CPOWER RATING
D 725 mW 5.8 mW/°C 464 mW 377 mW N/A
FK 1375 mW 11 mW/°C 880 mW 715 mW 275 mW
JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW
P 1000 mW 8.0 mW/°C 640 mW 520 mW N/A
PW 525 mW 4.2 mW/°C 336 mW N/A N/A
recommended operating conditions
C SUFFIX I SUFFIX M SUFFIXUNIT
MIN MAX MIN MAX MIN MAXUNIT
Supply voltage, VDD 3 16 4 16 4 16 V
Common mode input voltage VICVDD = 5 V –0.2 3.5 –0.2 3.5 0 3.5
VCommon-mode input voltage, VICVDD = 10 V –0.2 8.5 –0.2 8.5 0 8.5
V
Operating free-air temperature, TA 0 70 –40 85 –55 125 °C
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, V DD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA†TLC272C, TLC272AC,TLC272BC, TLC277C UNITA
MIN TYP MAX
TLC272CVO = 1.4 V, VIC = 0, 25°C 1.1 10
TLC272C O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 12
mV
TLC272ACVO = 1.4 V, VIC = 0, 25°C 0.9 5
mV
VIO Input offset voltage
TLC272AC O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 6.5
VIO Input offset voltage
TLC272BCVO = 1.4 V, VIC = 0, 25°C 230 2000
TLC272BC O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 3000
µV
TLC277CVO = 1.4 V, VIC = 0, 25°C 200 500
µV
TLC277C O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 1500
αVIO Temperature coefficient of input offset voltage25°C to
70°C 1.8 µV/°C
IIO Input offset current (see Note 4) VO = 2 5 V VIC = 2 5 V25°C 0.1
pAIIO Input offset current (see Note 4) VO = 2.5 V, VIC = 2.5 V70°C 7 300
pA
IIB Input bias current (see Note 4) VO = 2 5 V VIC = 2 5 V25°C 0.6
pAIIB Input bias current (see Note 4) VO = 2.5 V, VIC = 2.5 V70°C 40 600
pA
VICRCommon-mode input voltage range
25°C–0.2
to4
–0.3to
4.2V
VICRg g
(see Note 5)
Full range–0.2
to3.5
V
25°C 3.2 3.8
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ 0°C 3 3.8 V
70°C 3 3.8
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 0°C 0 50 mV
70°C 0 50
25°C 5 23
AVD Large-signal differential voltage amplification VO = 0.25 V to 2 V, RL = 10 kΩ 0°C 4 27 V/mV
70°C 4 20
25°C 65 80
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 84 dB
70°C 60 85
S l lt j ti ti25°C 65 95
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V 0°C 60 94 dB(∆VDD/∆VIO)
70°C 60 96
V 2 5 V V 5 V25°C 1.4 3.2
IDD Supply current (two amplifiers)VO = 2.5 V,No load
VIC = 5 V,0°C 1.6 3.6 mANo load
70°C 1.2 2.6† Full range is 0°C to 70°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, V DD = 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA†TLC272C, TLC272AC,TLC272BC, TLC277C UNITA
MIN TYP MAX
TLC272CVO = 1.4 V, VIC = 0, 25°C 1.1 10
TLC272C O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 12
mV
TLC272ACVO = 1.4 V, VIC = 0, 25°C 0.9 5
mV
VIO Input offset voltage
TLC272AC O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 6.5
VIO Input offset voltage
TLC272BCVO = 1.4 V, VIC = 0, 25°C 290 2000
TLC272BC O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 3000
µV
TLC277CVO = 1.4 V, VIC = 0, 25°C 250 800
µV
TLC277C O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 1900
αVIO Temperature coefficient of input offset voltage25°C to
70°C 2 µV/°C
IIO Input offset current (see Note 4) VO = 5 V VIC = 5 V25°C 0.1
pAIIO Input offset current (see Note 4) VO = 5 V, VIC = 5 V70°C 7 300
pA
IIB Input bias current (see Note 4) VO = 5 V VIC = 5 V25°C 0.7
pAIIB Input bias current (see Note 4) VO = 5 V, VIC = 5 V70°C 50 600
pA
VICRCommon-mode input voltage range
25°C–0.2
to9
–0.3to
9.2V
VICRg g
(see Note 5)
Full range–0.2
to8.5
V
25°C 8 8.5
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ 0°C 7.8 8.5 V
70°C 7.8 8.4
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 0°C 0 50 mV
70°C 0 50
25°C 10 36
AVD Large-signal differential voltage amplification VO = 1 V to 6 V, RL = 10 kΩ 0°C 7.5 42 V/mV
70°C 7.5 32
25°C 65 85
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 88 dB
70°C 60 88
S l lt j ti ti25°C 65 95
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V 0°C 60 94 dB(∆VDD/∆VIO)
70°C 60 96
V 2 5 V V 5 V25°C 1.9 4
IDD Supply current (two amplifiers)VO = 2.5 V,No load
VIC = 5 V,0°C 2.3 4.4 mANo load
70°C 1.6 3.4† Full range is 0°C to 70°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, V DD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA†TLC272I, TLC272AI,TLC272BI, TLC277I UNITAMIN TYP MAX
TLC272IVO = 1.4 V, VIC = 0, 25°C 1.1 10
TLC272I O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 13
mV
TLC272AIVO = 1.4 V, VIC = 0, 25°C 0.9 5
mV
VIO Input offset voltage
TLC272AI O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 7
VIO Input offset voltage
TLC272BIVO = 1.4 V, VIC = 0, 25°C 230 2000
TLC272BI O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 3500
µV
TLC277IVO = 1.4 V, VIC = 0, 25°C 200 500
µV
TLC277I O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 2000
αVIO Temperature coefficient of input offset voltage25°C to
85°C 1.8 µV/°C
IIO Input offset current (see Note 4) VO = 2 5 V VIC = 2 5 V25°C 0.1
pAIIO Input offset current (see Note 4) VO = 2.5 V, VIC = 2.5 V85°C 24 15
pA
IIB Input bias current (see Note 4) VO = 2 5 V VIC = 2 5 V25°C 0.6
pAIIB Input bias current (see Note 4) VO = 2.5 V, VIC = 2.5 V85°C 200 35
pA
VICRCommon-mode input voltage range
25°C–0.2
to4
–0.3to
4.2V
VICRg g
(see Note 5)
Full range–0.2
to3.5
V
25°C 3.2 3.8
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ –40°C 3 3.8 V
85°C 3 3.8
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –40°C 0 50 mV
85°C 0 50
L i l diff ti l lt lifi ti25°C 5 23
AVDLarge-signal differential voltage amplification
VO = 1 V to 6 V, RL = 10 kΩ –40°C 3.5 32 V/mV
85°C 3.5 19
25°C 65 80
CMRR Common-mode rejection ratio VIC = VICRmin –40°C 60 81 dB
85°C 60 86
S l lt j ti ti25°C 65 95
kSVR Supply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –40°C 60 92 dB(∆VDD/∆VIO)
85°C 60 96
V 5 V V 5 V25°C 1.4 3.2
IDD Supply current (two amplifiers)VO = 5 V,No load
VIC = 5 V,–40°C 1.9 4.4 mANo load
85°C 1.1 2.4
† Full range is –40°C to 85°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, V DD = 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA†TLC272I, TLC272AI,TLC272BI, TLC277I UNITAMIN TYP MAX
TLC272IVO = 1.4 V, VIC = 0, 25°C 1.1 10
TLC272I O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 13
mV
TLC272AIVO = 1.4 V, VIC = 0, 25°C 0.9 5
mV
VIO Input offset voltage
TLC272AI O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 7
VIO Input offset voltage
TLC272BIVO = 1.4 V, VIC = 0, 25°C 290 2000
TLC272BI O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 3500
µV
TLC277IVO = 1.4 V, VIC = 0, 25°C 250 800
µV
TLC277I O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 2900
αVIO Temperature coefficient of input offset voltage25°C to85°C 2 µV/°C
IIO Input offset current (see Note 4) VO = 5 V VIC = 5 V25°C 0.1
pAIIO Input offset current (see Note 4) VO = 5 V, VIC = 5 V85°C 26 1000
pA
IIB Input bias current (see Note 4) VO = 5 V VIC = 5 V25°C 0.7
pAIIB Input bias current (see Note 4) VO = 5 V, VIC = 5 V85°C 220 2000
pA
VICRCommon-mode input voltage range
25°C–0.2
to9
–0.3to
9.2V
VICRg g
(see Note 5)
Full range–0.2
to8.5
V
25°C 8 8.5
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ –40°C 7.8 8.5 V
85°C 7.8 8.5
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –40°C 0 50 mV
85°C 0 50
25°C 10 36
AVD Large-signal differential voltage amplification VO = 1 V to 6 V, RL = 10 kΩ –40°C 7 46 V/mV
85°C 7 31
25°C 65 85
CMRR Common-mode rejection ratio VIC = VICRmin –40°C 60 87 dB
85°C 60 88
S l lt j ti ti25°C 65 95
kSVR Supply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –40°C 60 92 dB(∆VDD/∆VIO)
85°C 60 96
V 5 V V 5 V25°C 1.4 4
IDD Supply current (two amplifiers)VO = 5 V,No load
VIC = 5 V,–40°C 2.8 5 mANo load
85°C 1.5 3.2
† Full range is –40°C to 85°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, V DD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA† TLC272M, TLC277MUNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAXUNIT
TLC272MVO = 1.4 V, VIC = 0, 25°C 1.1 10
mV
VIO Input offset voltage
TLC272M O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 12
mV
VIO Input offset voltage
TLC277MVO = 1.4 V, VIC = 0, 25°C 200 500
µVTLC277M O ,RS = 50 Ω,
IC ,RL = 10 kΩ Full range 3750
µV
αVIOTemperature coefficient of input offsetvoltage
25°C to 125°C 2.1 µV/°C
IIO Input offset current (see Note 4) VO = 2 5 V VIC = 2 5 V25°C 0.1 pA
IIO Input offset current (see Note 4) VO = 2.5 V VIC = 2.5 V125°C 1.4 15 nA
IIB Input bias current (see Note 4) VO = 2 5 V VIC = 2 5 V25°C 0.6 pA
IIB Input bias current (see Note 4) VO = 2.5 V VIC = 2.5 V125°C 9 35 nA
VICRCommon-mode input voltage range
25°C0to4
–0.3to
4.2V
VICRg g
(see Note 5)
Full range0to
3.5V
25°C 3.2 3.8
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ –55°C 3 3.8 V
125°C 3 3.8
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –55°C 0 50 mV
125°C 0 50
25°C 5 23
AVD Large-signal differential voltage amplification VO = 0.25 V to 2 V RL = 10 kΩ –55°C 3.5 35 V/mV
125°C 3.5 16
25°C 65 80
CMRR Common-mode rejection ratio VIC = VICRmin –55°C 60 81 dB
125°C 60 84
S l lt j ti ti25°C 65 95
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –55°C 60 90 dB(∆VDD/∆VIO)
125°C 60 97
V 2 5 V V 2 5 V25°C 1.4 3.2
IDD Supply current (two amplifiers)VO = 2.5 V,No load
VIC = 2.5 V,–55°C 2 5 mANo load125°C 1 2.2
† Full range is –55°C to 125°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, V DD = 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA† TLC272M, TLC277MUNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAXUNIT
TLC272MVO = 1.4 V, VIC = 0, 25°C 1.1 10
mV
VIO Input offset voltage
TLC272MRS = 50 Ω, RL = 10 kΩ Full range 12
mV
VIO Input offset voltage
TLC277MVO = 1.4 V, VIC = 0, 25°C 250 800
µVTLC277MRS = 50 Ω, RL = 10 kΩ Full range 4300
µV
αVIOTemperature coefficient of input offsetvoltage
25°C to 125°C 2.2 µV/°C
IIO Input offset current (see Note 4) VO = 5 V VIC = 5 V25°C 0.1 pA
IIO Input offset current (see Note 4) VO = 5 V, VIC = 5 V125°C 1.8 15 nA
IIB Input bias current (see Note 4) VO = 5 V VIC = 5 V25°C 0.7 pA
IIB Input bias current (see Note 4) VO = 5 V, VIC = 5 V125°C 10 35 nA
VICRCommon-mode input voltage range
25°C0to9
–0.3to
9.2V
VICRg g
(see Note 5)
Full range0to
8.5V
25°C 8 8.5
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ –55°C 7.8 8.5 V
125°C 7.8 8.4
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –55°C 0 50 mV
125°C 0 50
L i l diff ti l lt25°C 10 36
AVDLarge-signal differential voltageamplification
VO = 1 V to 6 V, RL = 10 kΩ –55°C 7 50 V/mVam lification
125°C 7 27
25°C 65 85
CMRR Common-mode rejection ratio VIC = VICRmin –55°C 60 87 dB
125°C 60 86
S l lt j ti ti25°C 65 95
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –55°C 60 90 dB(∆VDD/∆VIO)
125°C 60 97
V 5 V V 5 V25°C 1.9 4
IDD Supply current (two amplifiers)VO = 5 V,No load
VIC = 5 V,–55°C 3 6 mANo load125°C 1.3 2.8
† Full range is –55°C to 125°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, V DD = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONSTLC272Y
UNITPARAMETER TEST CONDITIONSMIN TYP MAX
UNIT
VIO Input offset voltageVO = 1.4 V, VIC = 0,
1 1 10 mVVIO Input offset voltage O ,RS = 50 Ω,
IC ,RL = 10 kΩ 1.1 10 mV
αVIO Temperature coefficient of input offset voltage 1.8 µV/°C
IIO Input offset current (see Note 4) VO = 2.5 V, VIC = 2.5 V 0.1 pA
IIB Input bias current (see Note 4) VO = 2.5 V, VIC = 2.5 V 0.6 pA
VICR Common-mode input voltage range (see Note 5)–0.2
to4
–0.3to
4.2V
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ 3.2 3.8 V
VOL Low-level output voltage VID = –100 mV, IOL = 0 0 50 mV
AVD Large-signal differential voltage amplification VO = 0.25 V to 2 V RL = 10 kΩ 5 23 V/mV
CMRR Common-mode rejection ratio VIC = VICRmin 65 80 dB
kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) VDD = 5 V to 10 V, VO = 1.4 V 65 95 dB
IDD Supply current (two amplifiers)VO = 2.5 V,No load
VIC = 2.5 V,1.4 3.2 mA
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.5. This range also applies to each input individually.
electrical characteristics, V DD = 10 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONSTLC272Y
UNITPARAMETER TEST CONDITIONSMIN TYP MAX
UNIT
VIO Input offset voltageVO = 1.4 V, VIC = 0,
1 1 10 mVVIO Input offset voltage O ,RS = 50 Ω,
IC ,RL = 10 kΩ
1.1 10 mV
αVIO Temperature coefficient of input offset voltage 1.8 µV/°C
IIO Input offset current (see Note 4) VO = 5 V, VIC = 5 V 0.1 pA
IIB Input bias current (see Note 4) VO = 5 V, VIC = 5 V 0.7 pA
VICR Common-mode input voltage range (see Note 5)–0.2
to9
–0.3to
9.2V
VOH High-level output voltage VID = 100 mV, RL = 10 kΩ 8 8.5 V
VOL Low-level output voltage VID = –100 mV, IOL = 0 0 50 mV
AVD Large-signal differential voltage amplification VO = 1 V to 6 V, RL = 10 kΩ 10 36 V/mV
CMRR Common-mode rejection ratio VIC = VICRmin 65 85 dB
kSVR Supply-voltage rejection ratio (∆VDD/∆VIO) VDD = 5 V to 10 V, VO = 1.4 V 65 95 dB
IDD Supply current (two amplifiers)VO = 5 V, No load
VIC = 5 V,1.9 4 mA
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.5. This range also applies to each input individually.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, V DD = 5 V
PARAMETER TEST CONDITIONS TA
TLC272C, TLC272AC,TLC272BC, TLC277C UNITA
MIN TYP MAX
25°C 3.6
VIPP = 1 V 0°C 4
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
70°C 3V/µsSR Slew rate at unity gain CL = 20 pF,
See Figure 1 25°C 2.9V/µs
See Figure 1VIPP = 2.5 V 0°C 3.1
70°C 2.5
Vn Equivalent input noise voltagef = 1 kHz,See Figure 2
RS = 20 Ω,25°C 25 nV/√Hz
V V C 20 F25°C 320
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 1
0°C 340 kHzRL = 10 kΩ, See Figure 1
70°C 260
V 10 V C 20 F25°C 1.7
B1 Unity-gain bandwidthVI = 10 mV,See Figure 3
CL = 20 pF,0°C 2 MHz
See Figure 370°C 1.3
V 10 mV f B25°C 46°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 3 0°C 47°CL = 20 F, See Figure 3
70°C 43°
operating characteristics at specified free-air temperature, V DD = 10 V
PARAMETER TEST CONDITIONS TA
TLC272C, TLC272AC,TLC272BC, TLC277C UNITA
MIN TYP MAX
25°C 5.3
VIPP = 1 V 0°C 5.9
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
70°C 4.3V/µsSR Slew rate at unity gain CL = 20 pF,
See Figure 1 25°C 4.6V/µs
See Figure 1VIPP = 5.5 V 0°C 5.1
70°C 3.8
Vn Equivalent input noise voltagef = 1 kHz,See Figure 2
RS = 20 Ω,25°C 25 nV/√Hz
V V C 20 F25°C 200
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 1
0°C 220 kHzRL = 10 kΩ, See Figure 1
70°C 140
V 10 V C 20 F25°C 2.2
B1 Unity-gain bandwidthVI = 10 mV,See Figure 3
CL = 20 pF,0°C 2.5 MHz
See Figure 370°C 1.8
V 10 mV f B25°C 49°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 3 0°C 50°CL = 20 F, See Figure 3
70°C 46°
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, V DD = 5 V
PARAMETER TEST CONDITIONS TA
TLC272I, TLC272AI,TLC272BI, TLC277I UNITAMIN TYP MAX
25°C 3.6
VIPP = 1 V –40°C 4.5
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
85°C 2.8V/µsSR Slew rate at unity gain CL = 20 pF,
See Figure 1 25°C 2.9V/µs
See Figure 1VIPP = 2.5 V –40°C 3.5
85°C 2.3
Vn Equivalent input noise voltagef = 1 kHz,See Figure 2
RS = 20 Ω,25°C 25 nV/√Hz
V V C 20 F25°C 320
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 1
–40°C 380 kHzRL = 10 kΩ, See Figure 1
85°C 250
V 10 V C 20 F25°C 1.7
B1 Unity-gain bandwidthVI = 10 mV,See Figure 3
CL = 20 pF,–40°C 2.6 MHz
See Figure 385°C 1.2
V 10 mV f B25°C 46°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 3 –40°C 49°CL = 20 F, See Figure 3
85°C 43°
operating characteristics at specified free-air temperature, V DD = 10 V
PARAMETER TEST CONDITIONS TA
TLC272I, TLC272AI,TLC272BI, TLC277I UNITAMIN TYP MAX
25°C 5.3
VIPP = 1 V –40°C 6.8
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
85°C 4V/µsSR Slew rate at unity gain CL = 20 pF,
See Figure 1 25°C 4.6V/µs
See Figure 1VIPP = 5.5 V –40°C 5.8
85°C 3.5
Vn Equivalent input noise voltagef = 1 kHz,See Figure 2
RS = 20 Ω,25°C 25 nV/√Hz
V V C 20 F25°C 200
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 1
–40°C 260 kHzRL = 10 kΩ, See Figure 1
85°C 130
V 10 V C 20 F25°C 2.2
B1 Unity-gain bandwidthVI = 10 mV,See Figure 3
CL = 20 pF,–40°C 3.1 MHz
See Figure 385°C 1.7
V 10 mV f B25°C 49°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 3 –40°C 52°CL = 20 F, See Figure 3
85°C 46°
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, V DD = 5 V
PARAMETER TEST CONDITIONS TATLC272M, TLC277M
UNITPARAMETER TEST CONDITIONS TA MIN TYP MAXUNIT
25°C 3.6
VIPP = 1 V –55°C 4.7
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
125°C 2.3V/µsSR Slew rate at unity gain CL = 20 pF,
See Figure 1 25°C 2.9V/µs
See Figure 1VIPP = 2.5 V –55°C 3.7
125°C 2
Vn Equivalent input noise voltagef = 1 kHz,See Figure 2
RS = 20 Ω,25°C 25 nV/√Hz
V V C 20 F25°C 320
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 1
–55°C 400 kHzRL = 10 kΩ, See Figure 1
125°C 230
V 10 V C 20 F25°C 1.7
B1 Unity-gain bandwidthVI = 10 mV,See Figure 3
CL = 20 pF,–55°C 2.9 MHz
See Figure 3125°C 1.1
V 10 mV f B25°C 46°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 3 –55°C 49°CL = 20 F, See Figure 3
125°C 41°
operating characteristics at specified free-air temperature, V DD = 10 V
PARAMETER TEST CONDITIONS TATLC272M, TLC277M
UNITPARAMETER TEST CONDITIONS TA MIN TYP MAXUNIT
25°C 5.3
VIPP = 1 V –55°C 7.1
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
125°C 3.1V/µsSR Slew rate at unity gain CL = 20 pF,
See Figure 1 25°C 4.6V/µs
See Figure 1VIPP = 5.5 V –55°C 6.1
125°C 2.7
Vn Equivalent input noise voltagef = 1 kHz,See Figure 2
RS = 20 Ω,25°C 25 nV/√Hz
V V C 20 F25°C 200
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 1
–55°C 280 kHzRL = 10 kΩ, See Figure 1
125°C 110
V 10 V C 20 F25°C 2.2
B1 Unity-gain bandwidthVI = 10 mV,See Figure 3
CL = 20 pF,–55°C 3.4 MHz
See Figure 3125°C 1.6
V 10 mV f B25°C 49°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 3 –55°C 52°CL = 20 F, See Figure 3
125°C 44°
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics, V DD = 5 V, TA = 25°C
PARAMETER TEST CONDITIONSTLC272Y
UNITPARAMETER TEST CONDITIONSMIN TYP MAX
UNIT
SR Slew rate at unity gainRL = 10 kΩ, CL = 20 pF, VIPP = 1 V 3.6
V/µsSR Slew rate at unity gain L ,See Figure 1
L ,
VIPP = 2.5 V 2.9V/µs
Vn Equivalent input noise voltage f = 1 kHz, RS = 20 Ω, See Figure 2 25 nV/√Hz
BOM Maximum output-swing bandwidthVO = VOH,See Figure 1
CL = 20 pF, RL = 10 kΩ,320 kHz
B1 Unity-gain bandwidth VI = 10 mV, CL = 20 pF, See Figure 3 1.7 MHz
φm Phase marginVI = 10 mV,See Figure 3
f = B1, CL = 20 pF,46°
operating characteristics, V DD = 10 V, TA = 25°C
PARAMETER TEST CONDITIONSTLC272Y
UNITPARAMETER TEST CONDITIONSMIN TYP MAX
UNIT
SR Slew rate at unity gainRL = 10 kΩ, CL = 20 pF, VIPP = 1 V 5.3
V/µsSR Slew rate at unity gain L ,See Figure 1
L ,
VIPP = 5.5 V 4.6V/µs
Vn Equivalent input noise voltage f = 1 kHz, RS = 20 Ω, See Figure 2 25 nV/√Hz
BOM Maximum output-swing bandwidthVO = VOH,See Figure 1
CL = 20 pF, RL = 10 kΩ,200 kHz
B1 Unity-gain bandwidth VI = 10 mV, CL = 20 pF, See Figure 3 2.2 MHz
φm Phase marginVI = 10 mV,See Figure 3
f = B1, CL = 20 pF,49°
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLC272 and TLC277 are optimized for single-supply operation, circuit configurations used for thevarious tests often present some inconvenience since the input signal, in many cases, must be offset fromground. This inconvenience can be avoided by testing the device with split supplies and the output load tied tothe negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of eithercircuit gives the same result.
VDD–
VDD+
–
+
CL RL
VOVIVI
VO
RLCL
VDD
–
+
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
Figure 1. Unity-Gain Amplifier
VO
2 kΩ
20 Ω20 Ω
VDD–
20 Ω
2 kΩ
VO
20 Ω
1/2 VDD
–
+
VDD+
–
+
VDD
(b) SPLIT SUPPLY(a) SINGLE SUPPLY
Figure 2. Noise-Test Circuit
VDD–
VDD+
–
+
10 kΩ
VO
100 Ω
CL
VIVI
1/2 VDDCL
100 Ω
VO
10 kΩ
–
+
VDD
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
Figure 3. Gain-of-100 Inverting Amplifier
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
input bias current
Because of the high input impedance of the TLC272 and TLC277 operational amplifiers, attempts to measurethe input bias current can result in erroneous readings. The bias current at normal room ambient temperatureis typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions areoffered to avoid erroneous measurements:
1. Isolate the device from other potential leakage sources. Use a grounded shield around and between thedevice inputs (see Figure 4). Leakages that would otherwise flow to the inputs are shunted away.
2. Compensate for the leakage of the test socket by actually performing an input bias current test (usinga picoammeter) with no device in the test socket. The actual input bias current can then be calculatedby subtracting the open-socket leakage readings from the readings obtained with a device in the testsocket.
One word of caution: many automatic testers as well as some bench-top operational amplifier testers use theservo-loop technique with a resistor in series with the device input to measure the input bias current (the voltagedrop across the series resistor is measured and the bias current is calculated). This method requires that adevice be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is notfeasible using this method.
8 5
1 4
V = VIC
Figure 4. Isolation Metal Around Device Inputs(JG and P packages)
low-level output voltage
To obtain low-supply-voltage operation, some compromise was necessary in the input stage. This compromiseresults in the device low-level output being dependent on both the common-mode input voltage level as wellas the differential input voltage level. When attempting to correlate low-level output readings with those quotedin the electrical specifications, these two conditions should be observed. If conditions other than these are tobe used, please refer to Figures 14 through 19 in the Typical Characteristics of this data sheet.
input offset voltage temperature coefficient
Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. Thisparameter is actually a calculation using input offset voltage measurements obtained at two differenttemperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the deviceand the test socket. This moisture results in leakage and contact resistance, which can cause erroneous inputoffset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since themoisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that thesemeasurements be performed at temperatures above freezing to minimize error.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
full-power response
Full-power response, the frequency above which the operational amplifier slew rate limits the output voltageswing, is often specified two ways: full-linear response and full-peak response. The full-linear response isgenerally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidalinput signal until the maximum frequency is found above which the output contains significant distortion. Thefull-peak response is defined as the maximum output frequency, without regard to distortion, above which fullpeak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specifiedin this data sheet and is measured using the circuit of Figure 1. The initial setup involves the use of a sinusoidalinput to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave isincreased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the sameamplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained(Figure 5). A square wave is used to allow a more accurate determination of the point at which the maximumpeak-to-peak output is reached.
(d) f > B OM(c) f = B OM(b) BOM > f > 1 kHz(a) f = 1 kHz
Figure 5. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFETdevices and require longer test times than their bipolar and BiFET counterparts. The problem becomes morepronounced with reduced supply levels and lower temperatures.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
19POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of GraphsFIGURE
VIO Input offset voltage Distribution 6, 7
αVIO Temperature coefficient of input offset voltage Distribution 8, 9
vs High-level output current 10, 11VOH High-level output voltage
vs High level out ut currentvs Supply voltage
10, 1112OH g g y g
vs Free-air temperature 13
vs Common-mode input voltage 14, 15
VOL Low level output voltage
vs Common mode in ut voltagevs Differential input voltage
14, 1516VOL Low-level output voltage g
vs Free-air temperature 17vs Low-level output current 18, 19
vs Supply voltage 20AVD Large-signal differential voltage amplification
vs Su ly voltagevs Free-air temperature
2021VD g g g
vs Frequency 32, 33
IIB Input bias current vs Free-air temperature 22
IIO Input offset current vs Free-air temperature 22
VIC Common-mode input voltage vs Supply voltage 23
IDD Supply currentvs Supply voltage 24
IDD Supply currenty g
vs Free-air temperature 25
SR Slew ratevs Supply voltage 26
SR Slew ratey g
vs Free-air temperature 27
Normalized slew rate vs Free-air temperature 28
VO(PP) Maximum peak-to-peak output voltage vs Frequency 29
B1 Unity gain bandwidthvs Free-air temperature 30
B1 Unity-gain bandwidthvs Supply voltage 31
vs Supply voltage 34φm Phase margin
vs Su ly voltagevs Free-air temperature
3435φm g
vs Load capacitance 36
Vn Equivalent input noise voltage vs Frequency 37
Phase shift vs Frequency 32, 33
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
–50
Per
cent
age
of U
nits
– %
VIO – Input Offset Voltage – mV5
60
–4 –3 –2 –1 0 1 2 3 4
10
20
30
40
50
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌ
753 Amplifiers Tested From 6 Wafer LotsÌÌÌÌÌÌÌÌ
VDD = 5 VÌÌÌÌÌÌÌÌÌÌ
TA = 25°CÌÌÌÌÌÌÌÌÌÌ
P Package
DISTRIBUTION OF TLC272INPUT OFFSET VOLTAGE
Figure 7
50
40
30
20
10
43210–1–2–3–4
60
5VIO – Input Offset Voltage – mV
Per
cent
age
of U
nits
– %
0–5
DISTRIBUTION OF TLC272INPUT OFFSET VOLTAGE
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌ
753 Amplifiers Tested From 6 Wafer Lots
ÌÌÌÌVDD = 10 VÌÌÌÌÌÌÌÌ
TA = 25°CÌÌÌÌÌÌÌÌ
P Package
Figure 8
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌ
324 Amplifiers Tested From 8 Wafer LotsVDD = 5 VTA = 25°C to 125°CP PackageOutliers:(1) 20.5 µV/°C
50
40
30
20
10
86420–2–4–6–8
60
10
Per
cent
age
of U
nits
– %
0–10
αVIO – Temperature Coefficient – µV/°C
DISTRIBUTION OF TLC272 AND TLC277INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
Figure 9
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌ
324 Amplifiers Tested From 8 Wafer LotsVDD = 5 VTA = 25°C to 125°CP PackageOutliers:(1) 21.2 µV/°C
–100
Per
cent
age
of U
nits
– %
10
60
–8 –6 –4 –2 0 2 4 6 8
10
20
30
40
50
ÁαVIO – Temperature Coefficient – µV/°C
DISTRIBUTION OF TLC272 AND TLC277INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
Á
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
21POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 10
VDD = 3 V
VDD = 4 V
VDD = 5 V
VID = 100 mVTA = 25°CSee Note A4
3
2
1
– 8– 6– 4– 2
5
– 10IOH – High-Level Output Current – mA
VO
H –
Hig
h-Le
vel O
utpu
t Vol
tage
– V
00
HIGH-LEVEL OUTPUT VOLTAGEvs
HIGH-LEVEL OUTPUT CURRENT
ÁÁÁÁÁÁ
V OH
NOTE A: The 3-V curve only applies to the C version.
Figure 11
TA = 25°CVID = 100 mV
VDD = 10 V
VDD = 16 V14
12
10
8
6
4
2
– 30– 20– 10
16
– 40IOH – High-Level Output Current – mA
VO
H –
Hig
h-Le
vel O
utpu
t Vol
tage
– V
00
HIGH-LEVEL OUTPUT VOLTAGEvs
HIGH-LEVEL OUTPUT CURRENT
ÁÁÁÁÁÁ
V OH
– 5 – 15 – 20 – 25 – 35
Figure 12
ÌÌÌÌÌTA = 25°C
ÌÌÌÌÌÌÌÌ
RL = 10 kΩÌÌÌÌÌVID = 100 mV
0
16
2
4
6
8
10
12
14
1412108642 16VDD – Supply Voltage – V
0
HIGH-LEVEL OUTPUT VOLTAGEvs
SUPPLY VOLTAGE
VO
H –
Hig
h-Le
vel O
utpu
t Vol
tage
– V
ÁÁÁÁÁÁ
V OH
Figure 13
VDD = 10 V
VDD = 5 VVID = 100 mAIOH = –5 mA
–75TA – Free-Air Temperature – °C
125
VDD –1.6
–50 –25 0 20 50 75 100
VDD –1.8
HIGH-LEVEL OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
VDD –1.7
VDD –1.9
VDD –2.1
VDD –2
VDD –2.3
VDD –2.2
VDD –2.4
VO
H –
Hig
h-Le
vel O
utpu
t Vol
tage
– V
ÁÁÁÁÁÁ
V OH
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 14
VID = –1 V
VID = –100 mV
VDD = 5 VIOL = 5 mA
TA = 25°C600
500
400
321
700
4VIC – Common-Mode Input Voltage – V
VO
L –
Low
-Lev
el O
utpu
t Vol
tage
– m
V
3000
LOW-LEVEL OUTPUT VOLTAGEvs
COMMON-MODE INPUT VOLTAGE
ÁÁÁÁÁÁ
V OL
0.5 1.5 2.5 3.5
650
550
450
350
Figure 15
VID = –100 mV
VID = –2.5 V
VID = –1 V
TA = 25°CIOL = 5 mAVDD = 10 V
108642
500
450
400
350
300
VIC – Common-Mode Input Voltage – V0
250
LOW-LEVEL OUTPUT VOLTAGEvs
COMMON-MODE INPUT VOLTAGE
VO
L –
Low
-Lev
el O
utpu
t Vol
tage
– m
V
ÁÁÁÁ
V OL
1 3 5 7 9
Figure 16
VDD = 10 V
VDD = 5 V
TA = 25°CVIC = |VID/2|IOL = 5 mA
0
100
200
300
400
500
600
700
800
–8–6–4–2 –10VID – Differential Input Voltage – V
0
LOW-LEVEL OUTPUT VOLTAGEvs
DIFFERENTIAL INPUT VOLTAGE
–1 –3 –5 –7 –9
VO
L –
Low
-Lev
el O
utpu
t Vol
tage
– m
V
ÁÁÁÁÁÁ
V OL
Figure 17
VDD = 10 V
VDD = 5 V
IOL = 5 mAVID = –1 VVIC = 0.5 V
800
700
600
500
400
300
200
100
1007550250–25–50
900
125TA – Free-Air Temperature – °C
0–75
LOW-LEVEL OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
VO
L –
Low
-Lev
el O
utpu
t Vol
tage
– m
V
ÁÁÁÁÁÁ
V OL
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
23POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 18
LOW-LEVEL OUTPUT VOLTAGEvs
LOW-LEVEL OUTPUT CURRENT
VDD = 5 V
VDD = 4 V
VDD = 3 V
ÌÌÌÌÌÌÌÌ
TA = 25°CSee Note A
ÌÌÌÌÌÌÌÌ
VIC = 0.5 VÌÌÌÌVID = –1 V0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
76543210
8
1.0
IOL – Low-Level Output Current – mA
VO
L –
Low
-Lev
el O
utpu
t Vol
tage
– V
0
ÁÁÁÁV O
L
NOTE A: The 3-V curve only applies to the C version.Figure 19
LOW-LEVEL OUTPUT VOLTAGEvs
LOW-LEVEL OUTPUT CURRENT
VDD = 16 V
VDD = 10 V
ÌÌÌÌVID = –1 V
ÌÌÌÌÌÌÌÌÌÌ
VIC = 0.5 V
ÌÌÌÌÌÌÌÌ
TA = 25°C2.5
2.0
1.5
1.0
0.5
2520151050
30
3.0
IOL – Low-Level Output Current – mA
VO
L –
Low
-Lev
el O
utpu
t Vol
tage
– V
0
ÁÁÁÁÁÁ
V OL
Figure 20
0
60
160
2 4 6 8 10 12 14
10
20
30
40
50
VDD – Supply Voltage – V
TA = –55°C
RL = 10 kΩ
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsSUPPLY VOLTAGE
ÌÌÌÌÌÌÌÌ
TA = 25°C
ÌÌÌÌTA = 85°C
ÌÌÌÌÌTA = 125°C
ÌÌÌÌTA = 0°C
AV
D –
Lar
ge-S
igna
l Diff
eren
tial
ÁÁÁÁÁÁ
AV
DVo
ltage
Am
plifi
catio
n –
V/m
V
Figure 21
–75
50
1250
–50 –25 0 25 50 75 100
5
10
15
20
25
30
35
40
45
VDD = 5 V
VDD = 10 V
RL = 10 kΩ
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsFREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
AV
D –
Lar
ge-S
igna
l Diff
eren
tial
ÁÁÁÁÁÁ
AV
DVo
ltage
Am
plifi
catio
n –
V/m
V
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 22
INPUT BIAS CURRENT AND INPUT OFFSET CURREN Tvs
FREE-AIR TEMPERATURE
0.1125
10000
45 65 85 105
1
10
100
1000
25
– In
put B
ias
and
Offs
et C
urre
nts
– pA
VDD = 10 VVIC = 5 VSee Note A
ÌÌIIB
I IB
I IO
and
TA – Free-Air Temperature – °C
ÌÌÌÌ
IIO
35 55 75 95 115
NOTE A: The typical values of input bias current and inputoffset current below 5 pA were determined mathematically.
Figure 23
COMMON-MODEINPUT VOLTAGE POSITIVE LIMIT
vsSUPPLY VOLTAGE
0VDD – Supply Voltage – V
16
160
2 4 6 8 10 12 14
2
4
6
8
10
12
14TA = 25°C
ICV
– C
omm
on-M
ode
Inpu
t Vol
tage
– V
Figure 24
SUPPLY CURRENTvs
SUPPLY VOLTAGE
0VDD – Supply Voltage – V
5
160
2 4 6 8 10 12 14
1
2
3
4
VO = VDD/2No Load
TA = –55°C
– S
uppl
y C
urre
nt –
mA
I DD
0.5
1.5
2.5
3.5
4.5
ÌÌÌÌÌÌÌÌ
TA = 70°C
ÌÌÌÌÌÌÌÌ
TA = 125°C
ÌÌÌTA = 0°CÌÌÌÌÌÌÌÌ
TA = 25°C
Figure 25
SUPPLY CURRENTvs
FREE-AIR TEMPERATURE
–75
– S
uppl
y C
urre
nt –
mA
2
1250
0.5
1
1.5
–50 –25 0 25 50 75 100
No LoadVO = VDD/2
VDD = 10 V
VDD = 5 V
2.5
3
3.5
4
I DD
TA – Free-Air Temperature – °C
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
25POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 26
AV = 1VIPP = 1 VRL = 10 kΩCL = 20 pFTA = 25°CSee Figure 1
8
7
6
5
4
3
2
1
14121086420
16VDD – Supply Voltage – V
0
SLEW RATEvs
SUPPLY VOLTAGE
µsS
R –
Sle
w R
ate
– V
/
Figure 27
VIPP = 1 VVDD = 10 V
VIPP = 2.5 VVDD = 5 V
VIPP = 1 V
VDD = 5 V
VDD = 10 VVIPP = 5.5 V
–750
1
2
3
4
5
6
7
8
1007550250–25–50 125TA – Free-Air Temperature – °C
SLEW RATEvs
FREE-AIR TEMPERATURE
AV = 1RL = 10 kΩCL = 20 pFSee Figure 1
µsS
R –
Sle
w R
ate
– V
/
Figure 28
VDD = 5 V
VDD = 10 V
1.5
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
CL = 20 pFRL = 10 kΩVIPP = 1 VAV = 1
1007550250–25–50 125
TA – Free-Air Temperature – °C
Nor
mal
ized
Sle
w R
ate
–75
NORMALIZED SLEW RATEvs
FREE-AIR TEMPERATURE
Figure 29
TA = –55°CTA = 25°CTA = 125°C
RL = 10 kΩSee Figure 1
VDD = 5 V
VDD = 10 V
1000100
9
8
7
6
5
4
3
2
1
010000
10
f – Frequency – kHz
10
MAXIMUM PEAK OUTPUT VOLTAGEvs
FREQUENCY
– M
axim
um P
eak-
to-P
eak
Out
put V
olta
ge –
VV O
(PP
)
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 30
2.5
2.0
1.5
1007550250–25–501.0
3.0
TA – Free-Air Temperature – °C
–75
See Figure 3CL = 20 pFVI = 10 mVVDD = 5 V
UNITY-GAIN BANDWIDTHvs
FREE-AIR TEMPERATURE
– U
nity
-Gai
n B
andw
idth
– M
Hz
B1
125
Figure 31
2.0
1.5
14121086421.0
16
2.5
VDD – Supply Voltage – V
0
VI = 10 mVCL = 20 pFTA = 25°CSee Figure 3
UNITY-GAIN BANDWIDTHvs
SUPPLY VOLTAGE
– U
nity
-Gai
n B
andw
idth
– M
Hz
B1
Pha
se S
hiftLARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFTvs
FREQUENCY
Phase Shift
AVD
VDD = 5 VRL = 10 kΩTA = 25°C
180°
0°
30°
60°
90°
120°
150°
106
105
104
103
102
101
1
1 M100 k10 k1 k1000.1
10 M
f – Frequency – Hz
10
107
AV
D –
Lar
ge-S
igna
l Diff
eren
tial
ÁÁA
VD
Volta
ge A
mpl
ifica
tion
Figure 32
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
27POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Phase Shift
AVD
TA = 25°CRL = 10 kΩVDD = 10 V
Pha
se S
hift
150°
120°
90°
60°
30°
0°
180°
106
105
104
103
102
101
1
1 M100 k10 k1 k1000.1
10 M
f – Frequency – Hz
10
107
LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT
vsFREQUENCY
AV
D –
Lar
ge-S
igna
l Diff
eren
tial
ÁÁÁÁ
AV
DVo
ltage
Am
plifi
catio
n
Figure 33
Figure 34
45°
See Figure 3
VI = 10 mV
TA = 25°CCL = 20 pF
51°
49°
47°
1412108642 16
53°
VDD – Supply Voltage – V
m –
Pha
se M
argi
n
0
PHASE MARGINvs
SUPPLY VOLTAGE
mφ
48°
46°
52°
50°
Figure 35
PHASE MARGINvs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
See Figure 3
VI = 10 mVCL = 20 pF
VDD = 5 V
48°
46°
44°
42°
1007550250–25–5040°
125
50°
–75
m –
Pha
se M
argi
n mφ
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 36
VDD = 5 V
TA = 25°CVI = 10 mV
See Figure 345°
40°
35°
30°
8060402025°
100
50°
CL – Capacitive Load – pF
0
PHASE MARGINvs
CAPACITIVE LOAD
m –
Pha
se M
argi
nmφ
10 30 50 70 90
Figure 37
VN
– E
quiv
alen
t Inp
ut N
oise
Vol
tage
–
See Figure 2
RS = 20 ΩTA = 25°C
VDD = 5 V
10010
300
200
100
01000
400
f – Frequency – Hz
1
EQUIVALENT INPUT NOISE VOLTAGEvs
FREQUENCY
nV/
Hz
Vn
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
29POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
single-supply operation
While the TLC272 and TLC277 perform well using dual power supplies (also called balanced or split supplies),the design is optimized for single-supply operation. This design includes an input common-mode voltage rangethat encompasses ground as well as an output voltage range that pulls down to ground. The supply voltagerange extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly available forTTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is recommended.
Many single-supply applications require that a voltage be applied to one input to establish a reference level thatis above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38).The low input bias current of the TLC272 and TLC277 permits the use of very large resistive values to implementthe voltage divider, thus minimizing power consumption.
The TLC272 and TLC277 work well in conjunction with digital logic; however, when powering both linear devicesand digital logic from the same power supply, the following precautions are recommended:
1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the lineardevice supply rails can fluctuate due to voltage drops caused by high switching currents in the digitallogic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitivedecoupling is often adequate; however, high-frequency applications may require RC decoupling.
–
+
C0.01 µF
R3VREF
VI
R1R2
VDD
VO
R4
VREF VDDR3
R1 R3
VO (VREF VI )R4R2
VREF
Figure 38. Inverting Amplifier With Voltage Reference
(b) SEPARATE BYPASSED SUPPLY RAILS (preferred)
(a) COMMON SUPPLY RAILS
–
+
–
+
Logic Logic LogicPowerSupply
SupplyPower
LogicLogicLogicOUT
OUT
Figure 39. Common vs Separate Supply Rails
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
input characteristics
The TLC272 and TLC277 are specified with a minimum and a maximum input voltage that, if exceeded at eitherinput, could cause the device to malfunction. Exceeding this specified range is a common problem, especiallyin single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limitis specified at VDD – 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLC272 and TLC277 verygood input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage driftin CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorusdopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate)alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude.The offset voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month ofoperation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC272 andTLC277 are well suited for low-level signal processing; however, leakage currents on printed-circuit boards andsockets can easily exceed bias current requirements and cause a degradation in device performance. It is goodpractice to include guard rings around inputs (similar to those of Figure 4 in the Parameter MeasurementInformation section). These guards should be driven from a low-impedance source at the same voltage levelas the common-mode input (see Figure 40).
Unused amplifiers should be connected as grounded unity-gain followers to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stagedifferential amplifier. The low input bias current requirements of the TLC272 and TLC277 result in a very lownoise current, which is insignificant in most applications. This feature makes the devices especially favorableover bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibitgreater noise currents.
VI
–
+
–
+
VI
(b) INVERTING AMPLIFIER
–
+
(c) UNITY-GAIN AMPLIFIER(a) NONINVERTING AMPLIFIER
VIOUT OUT OUT
Figure 40. Guard-Ring Schemes
output characteristics
The output stage of the TLC272 and TLC277 is designed to sink and source relatively high amounts of current(see typical characteristics). If the output is subjected to a short-circuit condition, this high current capability cancause device damage under certain conditions. Output current capability increases with supply voltage.
All operating characteristics of the TLC272 and TLC277 are measured using a 20-pF load. The devices candrive higher capacitive loads; however, as output load capacitance increases, the resulting response poleoccurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 41). In manycases, adding a small amount of resistance in series with the load capacitance alleviates the problem.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
31POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
output characteristics (continued)
(c) CL = 150 pF, RL = NO LOAD
(b) CL = 130 pF, RL = NO LOAD(a) CL = 20 pF, RL = NO LOAD
VI
–2.5 V
CL
VO
2.5 V
–
+
TA = 25°Cf = 1 kHzVIPP = 1 V
(d) TEST CIRCUIT
Figure 41. Effect of Capacitive Loads and Test Circuit
Although the TLC272 and TLC277 possess excellent high-level output voltage and current capability, methodsfor boosting this capability are available, if needed. The simplest method involves the use of a pullup resistor(RP) connected from the output to the positive supply rail (see Figure 42). There are two disadvantages to theuse of this circuit. First, the NMOS pulldown transistor N4 (see equivalent schematic) must sink a comparativelylarge amount of current. In this circuit, N4 behaves like a linear resistor with an on resistance betweenapproximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very lowvalues of RP, a voltage offset from 0 V at the output occurs. Second, pullup resistor RP acts as a drain load toN4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying theoutput current.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
32 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
output characteristics (continued)
Figure 42. Resistive Pullup to Increase V OH
VDD – VOIF + IL + IP
Rp =
IL
IF
IP
RLR1R2
VO
RP
VDD
VI
–
+
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Ip = Pullup current required bythe operational amplifier(typically 500 µA)
Figure 43. Compensation for Input Capacitance
C
–
+
VO
feedback
Operational amplifier circuits almost always employ feedback, and since feedback is the first prerequisite foroscillation, some caution is appropriate. Most oscillation problems result from driving capacitive loads(discussed previously) and ignoring stray input capacitance. A small-value capacitor connected in parallel withthe feedback resistor is an effective remedy (see Figure 43). The value of this capacitor is optimized empirically.
electrostatic discharge protection
The TLC272 and TLC277 incorporate an internal electrostatic discharge (ESD) protection circuit that preventsfunctional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should beexercised, however, when handling these devices as exposure to ESD may result in the degradation of thedevice parametric performance. The protection circuit also causes the input bias currents to be temperaturedependent and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC272 andTLC277 inputs and outputs were designed to withstand –100-mA surge currents without sustaining latch-up;however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protectiondiodes should not, by design, be forward biased. Applied input and output voltage should not exceed the supplyvoltage by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators.Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across thesupply rails as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and canbe triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supplyvoltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and theforward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance oflatch-up occurring increases with increasing temperature and supply voltages.
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
33POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
10 kΩ
10 kΩ
5 kΩ
VI
–
+
10 kΩ
10 kΩ
10 kΩ
0.016 µF
–
+
R = 5 kΩ(3/d-1) (see Note A)Band Pass
High Pass
Low Pass
–
+
0.016 µF
5 V
1/2TLC272
1/2TLC272
1/2TLC272
NOTE A: d = damping factor, 1/Q
Figure 44. State-Variable Filter
1/2TLC272
VI
12 V
H.P.5082-2835
0.5 µFMylar
VO
100 kΩ
–
+
–
+
1/2TLC272
N.O.Reset
Figure 45. Positive-Peak Detector
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
34 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
1/2TLC272
110 Ω
VO(see Note B)
–
+250 µF,25 V
10 kΩ
TIP31TL431
20 kΩ 1 kΩ
100 kΩ0.47 µF
15 Ω
TIS193
0.01 µF
47 kΩ
22 kΩ
0.1 µF
4.7 kΩ
1.2 kΩ
VI(see Note A)
–
+
NOTES: A. VI = 3.5 to 15 VB. VO = 2 V, 0 to 1 A
Figure 46. Logic-Array Power Supply
9 V
100 kΩ
47 kΩ
TLC2721/2
1/2TLC272
R2
VO (see Note A)
VO (see Note B)10 kΩ
10 kΩ
R3
0.1 µF
100 kΩ
9 V
R1
–
+
fO1
4C(R2)R1R3
C
NOTES: A. VO(PP) = 8 VB. VO(PP) = 4 V
Figure 47. Single-Supply Function Generator
TLC272, TLC272A, TLC272B, TLC272Y, TLC277LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
35POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
10 kΩ
1/2TLC277
(see Note A)R1,10 kΩ
VO
95 kΩ10 kΩ
–
+
–5 V
VI+
VI–
5 V
10 kΩ 100 kΩ
–
+
–
+1/2
TLC277
1/2TLC277
NOTE B: CMRR adjustment must be noninductive.
Figure 48. Low-Power Instrumentation Amplifier
R/25 MΩ
C270 pF
2C540 pF
R10 MΩ
VO
VI
5 V
–
+
fNOTCH 1
2RC
C270 pF
R10 MΩ
1/2TLC272
Figure 49. Single-Supply Twin-T Notch Filter
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