the science and technology of photonic crystalshomepages.rpi.edu/~wangg/passion for physics 2006...
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The Science and Technology of Photonic Crystals
Shawn-Yu LinConstellation Professor of Physics
(Harnessing Light at Nano-Scales)
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Shawn Lin• Born in Taiwan
• B.S @ National Taiwan University
• Ph.D. @ Princeton University
• Post-doctor fellow @IBM T J Watson
• Distinguished MTS @ Sandia Nat. Labs
• Constellation Professor @ RPI
Integrated photonicsMicro-photonicsSi-photonicsEnergy-saving devices
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CONTENT
(I) Motivation (4)
(II) Definition and Introduction (12)
(III) Two Applications
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(I) 20th Century: Modern Electronic Revolution
SSemiconductor Si
STransistor Science & Technology
• Bell Lab• IBM
Integrated Circuit (IC)• Integrated Micro-System
Nano-System
Applications• Computer• Satellite• Missile
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(II) 21 Century: Information Age• Optical signal processing.(broadband, routing, switching, delivering)
Fiber & Optics
Photonic Chip
• Photonic Chip • Optical Semiconductor (photonic crystal)
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(III) 21 Century: Energy Conservation and Conservation
6How can we use less? Energy-saving devices.
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“energy conversion devices”--- the key scientific challenge
Energy crisis?But the world is full of energy!
Sun
India: solar electric water pump
Biomass power plant
Solarpanel
Anderson, Cal (50MW) (fm TM Lu)
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CONTENT
(I) Motivation
(II) Definition and Introduction
(III) Two Applications
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“If only it were possible to make dielectric materials in whichelectromagnetic waves cannot propagate at certain frequencies,all kinds of almost-magical things would be possible.”
---John MaddoxNature 348, 481 (1990)
Photonic Crystal:- New structural material- Light
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Photonic Crystal is an Optical Semiconductor.(It has the power to control light on-chip)
Photonic Crystal
Silicon Ge Semiconductor
The first silicon photonic crystal made in 1998. (on-chip control of light)
The first transistor made in 1948.(on-chip control of electrons)
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(II) Definition of Photonic CrystalSi
SiO2
(from JDJ)
Silicon Crystal Structure Photonic Crystal StructureIssues:Fabrication
3D topologySymmetryµm and nm scale
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3D Silicon Photonic Crystals(a diamond lattice symmetry)
Silicon Substrate (Nature Sep. 1998)
1.5µm
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(1) Photonic Crystal and Crystal Symmetry
1
2
4
3
1234
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(1) For the Past Five Years, There Has Been Rapid Advances in The Realization of 3D Lattices.
13
42
1
23
4
DiamondLatticeStructure
AB
C
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Three Classes of Photonic Crystals
3D1D 2D
200nm(MIT) (Sandia) (Sandia)
3D diamond lattice builton a Si substrate.
1D hole-array built on A SOI substrate.
2D hole array builtfrom GaAs on Al-oxide.
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Formation of Bands and Gaps in a Photonic Crystal
k
fBand Gap
Wavevector, k
co, speed of light
co/ n 3D mirrorEM vacuum
- in a photonic crystal;- Photonic DOS discontinuous;- clean gap of insulating photonic
states.
- in free space;- Photonic DOS continuous;- linear (speed of light).
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(2) We Have Also Come to Realized The Full Potentialof The Unique Photonic-Crystal Dispersion.
- mold the flow of light on-chip -
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Brillouin Zone
Γ ΓX' K L K
Complete photonic band-gap
(c/a
)Fr
eque
ncy,
ω,
Wavevector, k
(guide, bend; op. interconnect)
(prism, polarizer, rotator)
Dispersive dispersionBirefringent dispersionAn-isotropic dispersion
Band-edge
( )kxtie −ω
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(3) Micro-Photonics and Nano-Photonics(characteristic feature size)
aw
1998
Gap wavelength: λ ~ 10 µmRod-to-Rod spacing: a = 4.3 µmWidth of Rod: w =1.2 µm
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Nano-Structutral Photonics
Near Infrared (1.55 m)
Blue
Ultra-violet
µ
EUV
op communication
blue/green LED
UV and EUVoptics
Ope
ratin
g W
avel
engt
h (n
m)
Minimum Feature Size (nm)
10 100110
100
1000
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Photonic Crystal(New material for controlling light)
• 3D mirror• On-chip integration
• Micro-photonics• Nano-photonics
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Applications
1. “Dielectric” photonic-crystal Information Technology (5)
2. “Metallic” photonic-crystal Energy
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*Efficient Light Source*
*Efficient Electricity Generation*
E&M Responsepassiveactive
Photonic Lattice is a New Material That Could Lead to a Wide Range of Technological Breakthroughs.
*Communication Chip*
New Material Revolutionvia Nano-Structuring!
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(1) Integrated Optics Application: (Control the Flow of Light; Cavity Lasers)
Op Interconnect• guide• bend• cross• splitter• etc
Nature March ‘97(MIT JDJ, Nature)
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12
3 45 67
4
2 2
6 6
WG InputLight-out
Light-in
Micro-Cavity (Q~300-1000) 90-degree Bend
~λ
Linear Guide (no data yet)
Ch1
Ch2
LightInput
120-degree Splitter
(A. Scherer, Caltech)
Experimental Realization of Guide, Bend, Splitter and Cavity Laser
Nano Lasers Bragg Fiber
Si
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The First Realization of 3D Silicon Photonic Crystal Operating at Communication Wavelengths, λ~1.55µm
180nm
(Wired magazine)
180nm6-inch waferuniform
Optics Letters 24, 49 (1999).
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What’s Next:
At optical wavelengths:GuidesBendsSplittersFiltersSwitchesLossesIn-coupling (fiber)Out-coupling (fiber)Optical network
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Full 6-Inch Wafer
3D “Metallic” Photonic-Crystal (the third kind)
10mm
(2, 0.5, 0.35, 0.18, 0.10 µm)
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Light Emission
Light Emission
The Operating Principle of These Light Emitters Are Different.
(1)LightEmittingDiode
(2)IncandescentLamp
VB
CB e-1e-1 e-1 e-1
+ + + ++
Semiconductor
Band gap
0
0.2
0.4
0.6
0.8
1
1.2
1.42ω∝
0
0.2
0.4
0.6
0.8
1
1.2
1.4Metal
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The Photonic-Crystal Emitter Is Perhaps The Third One.
Spon. Thermal Emission
0
0.2
0.4
0.6
0.8
1.0
PhotonicBand Gap
Freq
uenc
y
Light EmissionPhotonic DOS
PhotonicBand Gap
(3) Photonic-Crystal Emitter
Engineered DOS
(EM Vacuum)
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(2) Photonic-Crystal As an Efficient Light Emitter:
a0=1.5µm
a0=2.8µm
a0=5µm
0
2
4
6
8
10
0 1 2 3 4 5 6 Lattice Constant a
o (µm)
filling fraction ~30%
0
2
4
6
8
0 5 10 15 20 25Wavelength (µm)
Em
issi
on In
tens
ityao
40% Electric-to-optical efficiency Variable Emission-λCompact (~Watts/cm2)
λ=1.5, 4, 6, 7.5 µm
“ Device’s micro/nano−structure does matter! ”
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(3) Lighting Application: An Incandescent Lamp Is Fundamentally Inefficient, Due To Its Broad Emission.
0
50
100
150
200
250
300
350
0 1 2 3 4 5Wavelength ( µm )
T=3000K
T=2500K
T=2000K
BB Radiation: Broad band
Eye-response: Narrow band
Wien Law:
Pow
er D
ensi
ty (W
/cm
2 )
[ ]kmT opeak −≅× µλ 2898
visible
(invented 1889by T. Edison)
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By A Proper Length Scaling, The Band-Edge PositionCould Be Shifted From 4, 2µm To Visible Wavelengths
0
0.2
0.4
0.6
0.8
1
-3 0 3 6 9 12 15 18Wavelength (µm)
"400nm"
band gap
1.8µm λ=4µm
emission
−λ= 4 and 1.8 µm (experimental result)− λ~400nm (simulation result with Au)
- Fabrication: feature size ~ 100-150nm. (Multi-layer e-beam/ nano-imprint) - Material: dielectric constant/ melting point. (material limit)
New materialSmall dimension
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(4) Portable Electricity:The Successful Realization of a λ~2µm Emitter Is Important
for Thermal Photo-Voltaic (TPV) Power Generation
“A TPV generator converts radiation energy ( Qr ) into
electrical energy ( P ).”
* Compact! Quiet! Efficient! High power!
Basic Principle of a TPV system:Schematic of TPV Generator
Thermal emitter
PV Cell
Filter
burner
(Scientific American, p. 90-95, September 1998; Physics World, Aug. 9.49, 1998)
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For A Conventional TPV System, Its Efficiency and Power Are Limited
By The “Broad” Thermal Radiation Spectrum
Modify thermal emission,Prevent light leakage at long-λ~70% of wasted radiation energy !!
1 2 3 4 5 6 7 8Wavelength (µm)
Ideal radiation pattern: Step function
suppressedemission
Eg(GaSb)
0
5
10
15
20
1 2 3 4 5 6 7 8Wavelength (µm)
BB Cavity Radiator (T=1500K)
η~11%,
P~3W/cm2
GaSb Response
Pow
er D
ensi
ty (W
/cm
2 )
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A PBG Narrow-Band Emitter Is Promising For Enhancing TPV Conversion Efficiency and Power
0
5
10
15
20
1 2 3 4 5 6 7 8Wavelength (µm)Q
r, P
ower
Den
sity
(W/c
m2 )
suppressedemission
Eg,GaSb PV Cell
(λ scaled by 30%)
3D “Tungsten” photonic lattice1.1µm
2
468
10
30
50
900 1100 1300 1500 1700 1900T (K)
Photonic Crystal
Emitter Window GaSb Cell
Reflector
BB
Stru.- WEr-Oxide
Conversion E
fficiency
(* upper limit case, Zenker et al IEEE Tran. Elec. Dev. Vol. 48, 367, 2001)
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a0=1.5µm
a0=2.8µm
a0=5µm
0
2
4
6
8
10
0 1 2 3 4 5 6 Lattice Constant a
o (µm)
filling fraction ~30%
0
2
4
6
8
0 5 10 15 20 25Wavelength (µm)
Compact and efficient Infrared light source(λ=1-10µm; P=100mW-10W)
Em
issi
on In
tens
ity
0
10
20
30
40
0 2 4 6 8 10 12 14Wavelength (µm)
λ=1.5 µm
Compact and efficient λ=1.5µm Pump Source( P=1W-10W; Area< 0.5 cm2)
Em
issi
on In
tens
ity
Electricity generation using thermal photo-voltaic technology Near-Visible Light Emission
ThermalRadiator
GaSbCell
0.5-1.5 µm 0.5µm
0.35 µm 0.18µmBurner