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The Perspective of China SOI Ecosystem Jeffrey Wang CEO Simgui Technology World Semiconductor Conference Nanjing May 18, 2019

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Page 1: The Perspective of China SOI Ecosystem WSC 2019-0518 Postsoiconsortium.org/.../04/The-Perspective-of-China-SOI-Ecosystem...P… · The Perspective of China SOI Ecosystem Jeffrey Wang

The Perspective of China SOI EcosystemJeffrey Wang CEO Simgui Technology

World Semiconductor Conference ∙ Nanjing ∙ May 18, 2019

Page 2: The Perspective of China SOI Ecosystem WSC 2019-0518 Postsoiconsortium.org/.../04/The-Perspective-of-China-SOI-Ecosystem...P… · The Perspective of China SOI Ecosystem Jeffrey Wang

Why is China SOI Ecosystem Focused on RF-SOI?

2

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Simgui Technology

China Smart Phone Market

• China smart phone market reaches to 459 million units in 2017. However, growth rate becomes negative for the first time in 9 years.

• China counts for 30% of worldwide market.3

18 38 85

194

364 422 431

478 459

48%

111%124% 128%

88%

16% 2% 11%

-4% -20%

0%

20%

40%

60%

80%

100%

120%

140%

160%

-

100

200

300

400

500

600

2009 2010 2011 2012 2013 2014 2015 2016 2017

Milli

on U

nit

China Smart Phone Sales

Smart phone sales (million) Growth Rate %

102 78

72 51 51

17 15

11 5

2 46

- 20 40 60 80 100 120

HuaweiOPPO

vivoApple

MIMeizu

GioneeSamsungLephone

LenovoOther

Million Unit

2017 China Smart Phone Market

Smart phone sales (million)

• In 2017, Domestic smart phone suppliers counts for 86% of China market.

• Among them, Huawei, Oppo and Vivo are top three suppliers and count for 56% of the China market.

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Simgui Technology

China is Motivated to Setup 5G Network

4

16

Network Architecture-A High Level View 5G Network Architecture-A High Level View 5G

C. Unified Database Management

Rapid fault recovery is required for network data status information (such as user data and policy data shared across data centers), to meet network reliability requirements after the virtualization of functions. The traditional disaster recovery mechanism based on N+1 backup relies on private signaling interaction to implement

CP Nodes

CP Nodes

User Data

Policy data

Big DataAnalytics

IP network

CP NodesData Center Data Center

Micro-DC

Subscriber/policy DataContext/network Data

DB

DB DB

DB

status information synchronization, which produces system inefficiency and complex interaction of cross-vendor products.

With separated data and control logic, network status information can be centralized in a unified database. All network functions can access metadata models through standard interfaces and locally store dynamic user data. Thanks to the distributed database synchronization, network status information can implement real-time backup between data centers. With the help of the service management framework, the unified database simplifies the procedure for network information retrieval functions introduced by the component-based control plane to reduce the required signaling overhead for data synchronization.

11

Network Architecture-A High Level View 5G Network Architecture-A High Level View 5G

A. Multi-Connectivity Is Key to High Speed and Reliability

Multi-connectivity is gaining a reputation as an underlying fundamental construct for the deployment of the future network architecture. CloudRAN can be seamlessly deployed in a unified network architecture. This is a huge leap in radio network deployment. In current fragmented networks, increasing speed and reducing latency can improve user experience. Reliable high-speed data cannot depend on a single frequency band or standard connect ions. In he te rogeneous ne tworks , mu l t i -connectivity helps provide an optimal user experience based on LTE and 5G capabilities, such as high bandwidth and rates of high frequency, network coverage and re l iable mobi l i ty of low frequency, and accessible Wi-Fi resources. In scenarios that require high bandwidth or continuity, a user requires multiple concurrent connections. For example, data aggregation from multiple subscriptions to 5G, LTE, and Wi-Fi is

required to produce high bandwidth. An LTE network access is required to maintain continuity after a user has accessed a 5G high-frequency small cell.

In scenarios that source multiple t e c h n o l o g i e s , C l o u d R A N s e r v e s as an anchor for data connection which noticeably reduces alternative t ran sm i s s i on . I n the t rad i t i ona l architecture integrating base stations as an anchor for data connection, LTE, 5G, and Wi-Fi data is aggregated into a non-real time processing module of a specific standard to be forwarded to each access point. In the CloudRAN architecture, non-real time processing function modules in access points of different modes are integrated into the MCE, which serves as an anchor for data connection. Data flows are transmitted to each access point over the MCE, which prevents alternative transmission and reduces transmission investment by 15%, and latency by 10 ms.

17

Network Architecture-A High Level View 5G Network Architecture-A High Level View 5G

Self-Service Agile Operation

One of the targets and driving forces of network architecture evolution is to provide diversified services using mobile networks. E2E network slicing is a fundamental technology to achieve this target. In the 5G era, a network will contain multiple logically separated network slices. Each slice has a specific network topology, network function, and resource allocation model. If manual configuration is still used for network planning and deployment, operators' O&M system will potentially face a huge number of significant challenges.

5G networks will possess self-serving agile operation capabilities. Network slicing services can be automatically generated, maintained, or terminated according to services requirements, which significantly reduces subsequent operating expenses. Third-party vertical industries can input mobile network slicing requirements on an operation platform. The operator analyzes customer requirements based on current network status.

After a service level agreement procedure is complete, the operator maps

User• Users want more speed.• 4G networks are hard-

pressed to meet current user demand.

• In other words, users want to consume more, but experience and speeds are falling short of expectations.

Carrier• OPEX reduction should be a

strategic priority for 5G.• CAPEX as a percentage of

carrier revenue has declined from 17% to 12% in last decade.

• OPEX as a percentage of carrier revenue has risen from 62% to 75%.

5G Network (sub 6GHz)• 5G builds on 4G and

expands its potential.• The R15 standard focuses

on commercial needs for enhanced mobile broadband (eMBB). It also meets basic needs for uRLLC and mMTC.

Government• Strong support to develop

5G network with the aim to stimulate GDP growth in China.

• Total expected investment is RMB 1.14 trillion (US$ 170 billion).

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Simgui Technology

5G – High Speed, Low Latency and High Density

5

(Enhanced Mobile Broadband )

(massive Machine Type Communication)

(Ultra-Reliable and Low-Latency Communication)

Page 6: The Perspective of China SOI Ecosystem WSC 2019-0518 Postsoiconsortium.org/.../04/The-Perspective-of-China-SOI-Ecosystem...P… · The Perspective of China SOI Ecosystem Jeffrey Wang

Simgui Technology

China Mobile Plan – Large Scale Trial in 12 Cities and Commercial 5G Network by 2020

6

Large-scale Trial and Application Showcase’s Overall Layout

• Perform the large-scale trial in 5 cities (Shanghai, Hangzhou, Suzhou, Guangzhou, Wuhan) and the 5G typical application

showcase in another 12 cities to facilitate the 5G commercialization

Chongqing

Beijing

Nanning

Xiong’an

Chengdu

Fuzhou

Nanchang

Tianjin Shenyang

Lanzhou

Shenzhen 20

Smart Healthcare

4K Live Smart

Campus Robot

Smart transportation

Smart Manufacturer

Livelihood service Social

management Grid UAV Cloud

Gaming

Guangzhou

Wuhan

Zhengzhou

Suzhou

Hangzhou

Shanghai

Source:ChinaMobile

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Simgui Technology

China RF-SOI Supply Chain for 4G/5G Application

8

SOIMaterial SOIFoundry RFComponent SystemDesigner HandsetMakerDesignService

……

EDA Enablement on RF- and FD-SOI

Feng Ling, Ph.D.Founder and CEO

Page 8: The Perspective of China SOI Ecosystem WSC 2019-0518 Postsoiconsortium.org/.../04/The-Perspective-of-China-SOI-Ecosystem...P… · The Perspective of China SOI Ecosystem Jeffrey Wang

Simgui Technology

Smart Phone System Designer

8

• HiSilicon is a global fabless semiconductor and IC design company which is dedicated to comprehensive connectivity and multimedia chipset solutions.

• Kirin chip solution is the industry‘s leading intelligent mobile phone chip solutions.

• HiSilicon will launch a 5G-ready Kirin chip in 2019

• As a core subsidiary of Tsinghua Unigroup, UNISOC is a leading fabless semiconductor company committed to the independent R&D of core chipsets in mobile communications and IoT. Its products cover mobile chipset platforms supporting 2G / 3G / 4G/5G communication standards.

• UNISOC is dedicated to becoming the top 3 mobile baseband chipsets supplier in terms of global market share, and the largest pan-chip supplier in China with leading 5G technology.

(Former Spreadtrum and RDA)

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Simgui Technology

2017 Top 10 IC Design/System Company: HiSilicon and Spreadtrum Among the List

9

2017E Rank Company Headquarter 2016 2017E 2017/2016

% Change1 Qualcomm US 15,414 17,078 11%2 Broadcom Singapore 13,846 16,065 16%3 Nvidia US 6,389 9,228 44%4 MediaTek Taiwan 8,809 7,875 -11%5 Apple US 6,493 6,660 3%6 AMD US 4,272 5,249 23%7 HiSilicon China 3,910 4,715 21%8 Xilinx US 2,311 2,475 7%9 Marvell US 2,407 2,390 -1%

10 Unisoc(Spreadtrum and RDA) China 1,880 2,050 9%

- Top 10 Total - 65,731 73,785 12%- Other - 24,694 26,825 9%- Total Fabless/System - 90,425 100,610 11%

• Two Chinese companies, HiSilicon and Unisoc (Spreadtrum and RDA), are among the top 10 fabless IC sales leaders.

USD million

Source:ICInsight

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Simgui Technology

Component Design Company for RF FEM

• RDA Microelectronics is a fabless semiconductor company that designs, develops and markets wireless systems-on-chip and radio-frequency semiconductors for cellular, connectivity, and broadcast applications.

• RF FEM products include radio-frequency front end modules, power amplifiers, etc.

• Smartermicro is a fabless semiconductor company that designs, develops and provides MMIC, RF and Analog IC.

• The Company's product portfolio currently includes Gain block, GPA, Switch, Power Amplifier, Mixer, and etc.

• HunterSun is focused on the development of RF integrated circuit chips, analog integrated circuit chips, and System-on-Chip.

• The product portfolio currently includes wireless communications chips, power management chips, RF front-end modules, etc.

• Vanchip is focused on design and development of RF power amplifier for smart phone application.

• Its product includes 2G/3G/4G power amplifier for handset and other smart mobile devices.

11

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Simgui Technology

RF-SOI Foundries

• SMIC is one of the leading foundries in the world, and the largest foundry in China. • It provides integrated circuit (IC) foundry and technology services on process nodes from 0.35

micron to 28 nanometer that include logic, mixed-signal/RF CMOS, high voltage, SoC, flash, EEPROM, CIS and LCoS micro-display technology.

• HHGrace provides professional and highly value-added foundry services covering technology solutions from 1.0μm to 90nm process nodes.

• It focuses on advanced and differentiated technologies including eNVM (embedded Non-Volatile Memory), power management IC, power discrete, RF (Radio Frequency), as well as standard logic and mixed-signal.

• Ningbo Semiconductor International (NSI) focuses analog and specialty semiconductor technology platforms in the areas of high-voltage analog, radio frequency, and optoelectronics.

• It includes RFSOI and extended silicon-based solution for 5G RF front-end components and system integration.

12

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What is the Status of FD-SOI Ecosystem in China?

12

Page 13: The Perspective of China SOI Ecosystem WSC 2019-0518 Postsoiconsortium.org/.../04/The-Perspective-of-China-SOI-Ecosystem...P… · The Perspective of China SOI Ecosystem Jeffrey Wang

Simgui Technology

Fully Depleted FD-SOI

13

FD-SOI is an alternative solution at 28nm and below.

Source:Leti

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Simgui Technology

FD-SOI by ST, Samsung and GF

14

ST, Samsung and GF have setup FD-SOI platforms for MCU, IoT, consumer and automotive.

22FDX®

22nm FD-SOI Technology

GLOBALFOUNDRIES 22FDX® 22nm FD-SOI (Fully-Depleted Silicon-On-Insulator) process technology platform delivers cost effective performance for connected and low power embedded applications.

22nm FD-SOI transistor technology delivers FinFET-like performance and energy-efficiency, including up to 70% lower power vs. 28nm. The simulta-neous high Ft /high Fmax, high self gain and high current efficiency of 22FDX enables efficient, ultra low power analog/RF/mmWave designs.

Target Applications and Platform Solutions

Highlightst� 22nm FD-SOI technology + Manufactured in state-of-the-art fab

in Dresden, Germany; Upcoming second source qualification

+ Includes ultra-low-power with 0.4V operation

+ Transistor back-gate biasing for enhanced performance, and lower power and reduced area

+ World-class Fmax; Unique FET stacking for high-Pout/high-PAE mmWave PA and switches; Lowest power mmWave LNA

+ Bulk-like self-heating effect + Superior radiation immunity with

>30x/1000x lower SCU/MCU SER + Integrated RF and mmWave SoC

for 5G architectural innovation and reduced system cost

t� Low power embedded applications + Automotive (ADAS, IVI) + IoT, Wearables + Networking and WiFi + 5G: <6GHz and mmWave handset

solutions, backhaul, base stations + LEO satellite communications + mmWave radart�Comprehensive design ecosystem + Leverages bulk digital design flows

and existing EDA tools + Fully enabled with foundation IP and

application-specific complex IPt�Complete services and support + Design starter kit, MPWs, prototyping + Advanced packaging and test

solutions, including 2.5D/3D products

5G, LTE and 802.11ac/ax/ad IoT / Wearables Mid/low-tier

Apps Processor

Automotive mmWave Radar,

MCU, ADASEnables new RF architecturest 35-50% die shrinkt 40-50% lower power for RF

Tx/Rx (vs. 28nm)

Low power operation down to 0.4Vt 1pA/cell standbyt 80% lower total

power (vs. 40nm)

Full-node scaling benefits in PPAC vs. 28nmt <60% power @ iso-perf.t ~1.3X perf. @ iso-powert ~70% area

High Pout for long-range radar @77GHz in single- chip auto radar system for low latency, lower power, and lower cost

Integrated mmWave PA with high PSAT via FET stacking

High performance (RF)LDMOS for integrated PAand switch & power management

Adaptive body bias enables additional PPAC gains by compensating for PVT variability and aging

GLOBALFOUNDRIES AutoPro™ Service Package

Highest ft/fmaxfor 5G/mmWave

Fully integrated & versatile eMRAM for storage & compute

Roadmap to 12nm FD-SOI for next-gen designs

Automotive G2/G1 including eMRAM

Fully Depleted Ultra-thin Channel for Low Leakage

FD-SOI– Fully-Depleted Silicon-On-Insulator

– Planar process similar to bulk

Thin Buried Oxide Insulator

28nm FD-SOI Technology Platform from STMicroelectronics

Standard Cells

Spec

ific IP

s

Data Convertors

Clock Generators

IO

Memories

t Multiple Architectures

t Multiple Channel length (Poly-Biasing) options

t Multiple-Vt options

t Rich portfolio of cells

t Wide-Portfolio

t Various Patented Architectures

t Best-in-Class PPA

t Low Vmin

t Low Power options

t Mono & Dual rail compilers

t SER robustness

t Flexibility in Frame & Row Configuration

t Programmability

t Cluster Compatibility

t Compensation Strategy

t Body-Bias Generator

t OTP Security IP (Fuse)

t PMB, Thermal and Voltage Sensors

t Regulators

t Power Management IPs

t Multiple Architectures

t Wide Resolution range (up to 24 bits)

t High-Speed (up to 64 Gsps)

t Best-in-Class PPA

Power and energy efficiencyUltra low leakage, wide Body-Bias & operating voltage range

Cost effective platform

Robustnessfor mission critical applications

Analog performancefor mixed signal & RF design

© 2016 STMicroelectronics – All rights reserved

28nm FD-SOI Technology Platform from STMicroelectronics

Standard Cells

Spec

ific IP

s

Data Convertors

Clock Generators

IO

Memories

t Multiple Architectures

t Multiple Channel length (Poly-Biasing) options

t Multiple-Vt options

t Rich portfolio of cells

t Wide-Portfolio

t Various Patented Architectures

t Best-in-Class PPA

t Low Vmin

t Low Power options

t Mono & Dual rail compilers

t SER robustness

t Flexibility in Frame & Row Configuration

t Programmability

t Cluster Compatibility

t Compensation Strategy

t Body-Bias Generator

t OTP Security IP (Fuse)

t PMB, Thermal and Voltage Sensors

t Regulators

t Power Management IPs

t Multiple Architectures

t Wide Resolution range (up to 24 bits)

t High-Speed (up to 64 Gsps)

t Best-in-Class PPA

Power and energy efficiencyUltra low leakage, wide Body-Bias & operating voltage range

Cost effective platform

Robustnessfor mission critical applications

Analog performancefor mixed signal & RF design

© 2016 STMicroelectronics – All rights reserved

28nm FD-SOI Technology Platform from STMicroelectronics

Standard Cells

Spec

ific IP

s

Data Convertors

Clock Generators

IO

Memories

t Multiple Architectures

t Multiple Channel length (Poly-Biasing) options

t Multiple-Vt options

t Rich portfolio of cells

t Wide-Portfolio

t Various Patented Architectures

t Best-in-Class PPA

t Low Vmin

t Low Power options

t Mono & Dual rail compilers

t SER robustness

t Flexibility in Frame & Row Configuration

t Programmability

t Cluster Compatibility

t Compensation Strategy

t Body-Bias Generator

t OTP Security IP (Fuse)

t PMB, Thermal and Voltage Sensors

t Regulators

t Power Management IPs

t Multiple Architectures

t Wide Resolution range (up to 24 bits)

t High-Speed (up to 64 Gsps)

t Best-in-Class PPA

Power and energy efficiencyUltra low leakage, wide Body-Bias & operating voltage range

Cost effective platform

Robustnessfor mission critical applications

Analog performancefor mixed signal & RF design

© 2016 STMicroelectronics – All rights reserved

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Simgui Technology

China IC Design: CAGR 29% (2004-2017)

15

1.3 2.4 3.7 4.4 5.4 6.0 8.7 9.9 10.8

12.8 15.6

21.0

26.1

32.9

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

USD

Billi

on

China IC Design Growth

Source:CSIA

In 2017 worldwide fabless sales is around $100 billions and Chinese fabless company counts for 33%.

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Simgui Technology

IC Design Enterprises in China

16

15 17 20 23 27 32 41 56 62 76 98 200

389 463 471 479 488 491 483 472 485 502 518

583 681

736

1362 1380

0

200

400

600

800

1000

1200

1400

1600 IC Design Enterprises in China

1990-1999Close Door Policy

2000-2014Open Door Policy

2015-2020Stimulative Policy

Source:PWC

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Simgui Technology

New 300mm Fab Activities in China

17

27

Distribution of China 's Semiconductor Fabs

Major New Fabs:

- SMIC Beijing B2 in operation, B3 under construction, Shanghai: two 12-inch lines; Shenzhen: a 12-inch line; Ningbo one 8-inch line

- Wuhan Changjiang Memory(YMTC) initiated in March 2016, 3 NAND & NOR production lines;

- Hua Li new 12-inch line in Zhoupu; - Intel Dalian fab converted into NAND

production- UMC Xiamen 12-inch fab,production in

2017 - Jinghe Hefei 12 inch fab under

construction, production in 2017; - TSMC Nanjing 12-inch fab foundation,

production in 2018; - Jinhua new 12-inch memory fab

No ProvinceCity Company New 12” Fab

Activity

1 Beijing SMIC B3 28-14nm

23 Shanghai

SMIC 28-14nm

Huali 28-14nm

4 Wuxi Huali 65-45nm

5 Wuhan YMTC NAND and NOR

6 Hefei Nexchip 150-55nm

7 Fujian Jinhua 12” memory

8 Nanjing TSMC 14nm and blew

9 Xiamen UMC 12” line

10 Dalian Intel 12” line convert NAND

11 Chengdu Global Foundries 22nm FDX

12 Chongqing AOS 12” power managementSource:SEMI

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Simgui Technology

SMIC Technology Portfolio – Focus on FinFET

18

SMIC focuses on advanced logic and expands to 14nm FinFET. FDSOI is not in their roadmap.

Advanced&MatureLogic

SpecialtyTechnology

Source:SMIC

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Simgui Technology

China FD-SOI Ecosystem

19

ChinaFD-SOI

Product&Application

SOIWafer

IP

Foundry

EDA Enablement on RF- and FD-SOI

Feng Ling, Ph.D.Founder and CEO

MCUIoT

ConsumerAutomotive

22FDX®

22nm FD-SOI Technology

GLOBALFOUNDRIES 22FDX® 22nm FD-SOI (Fully-Depleted Silicon-On-Insulator) process technology platform delivers cost effective performance for connected and low power embedded applications.

22nm FD-SOI transistor technology delivers FinFET-like performance and energy-efficiency, including up to 70% lower power vs. 28nm. The simulta-neous high Ft /high Fmax, high self gain and high current efficiency of 22FDX enables efficient, ultra low power analog/RF/mmWave designs.

Target Applications and Platform Solutions

Highlightst� 22nm FD-SOI technology + Manufactured in state-of-the-art fab

in Dresden, Germany; Upcoming second source qualification

+ Includes ultra-low-power with 0.4V operation

+ Transistor back-gate biasing for enhanced performance, and lower power and reduced area

+ World-class Fmax; Unique FET stacking for high-Pout/high-PAE mmWave PA and switches; Lowest power mmWave LNA

+ Bulk-like self-heating effect + Superior radiation immunity with

>30x/1000x lower SCU/MCU SER + Integrated RF and mmWave SoC

for 5G architectural innovation and reduced system cost

t� Low power embedded applications + Automotive (ADAS, IVI) + IoT, Wearables + Networking and WiFi + 5G: <6GHz and mmWave handset

solutions, backhaul, base stations + LEO satellite communications + mmWave radart�Comprehensive design ecosystem + Leverages bulk digital design flows

and existing EDA tools + Fully enabled with foundation IP and

application-specific complex IPt�Complete services and support + Design starter kit, MPWs, prototyping + Advanced packaging and test

solutions, including 2.5D/3D products

5G, LTE and 802.11ac/ax/ad IoT / Wearables Mid/low-tier

Apps Processor

Automotive mmWave Radar,

MCU, ADASEnables new RF architecturest 35-50% die shrinkt 40-50% lower power for RF

Tx/Rx (vs. 28nm)

Low power operation down to 0.4Vt 1pA/cell standbyt 80% lower total

power (vs. 40nm)

Full-node scaling benefits in PPAC vs. 28nmt <60% power @ iso-perf.t ~1.3X perf. @ iso-powert ~70% area

High Pout for long-range radar @77GHz in single- chip auto radar system for low latency, lower power, and lower cost

Integrated mmWave PA with high PSAT via FET stacking

High performance (RF)LDMOS for integrated PAand switch & power management

Adaptive body bias enables additional PPAC gains by compensating for PVT variability and aging

GLOBALFOUNDRIES AutoPro™ Service Package

Highest ft/fmaxfor 5G/mmWave

Fully integrated & versatile eMRAM for storage & compute

Roadmap to 12nm FD-SOI for next-gen designs

Automotive G2/G1 including eMRAM

Fully Depleted Ultra-thin Channel for Low Leakage

FD-SOI– Fully-Depleted Silicon-On-Insulator

– Planar process similar to bulk

Thin Buried Oxide Insulator

Chengdu(planned)(planned)

• ChinaFD-SOIecosystemisunderdevelopment. Thekeyareas arefoundryandIP.Itrequiressupportfromwholesupplychain.

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Simgui Technology

Simgui Plans to Expand Manufacturing Facility for 300mm FD-SOI and RF-SOI Wafer

20

• 300mm Fab building is completed. Total planned capacity is 800K per year.

12” SOI Fab(Planned)

8” SOI Fab(Production)

Phase 1

Phase 2

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Simgui Technology

Summary• China is aggressively working on 5G. China Mobile will be ready for

commercial 5G network in 2020.

• RF-SOI supply chain has been setup for 4G/5G in China. But it is not balanced. It is strong on handset and system design but weak on component design and wafer foundry.

• FD-SOI ecosystem is under development in China. The key areas are foundry and IP. It requires support from whole supply chain.

• Simgui plans to expand manufacturing facility for 300mm FD-SOI and RF-SOI wafer.

21

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Simgui Technology

For more informationContact: [email protected]

22